JPH02250327A - Formation of wire bump of semiconductor chip - Google Patents

Formation of wire bump of semiconductor chip

Info

Publication number
JPH02250327A
JPH02250327A JP1070453A JP7045389A JPH02250327A JP H02250327 A JPH02250327 A JP H02250327A JP 1070453 A JP1070453 A JP 1070453A JP 7045389 A JP7045389 A JP 7045389A JP H02250327 A JPH02250327 A JP H02250327A
Authority
JP
Japan
Prior art keywords
wire
semiconductor chip
wires
bonding
bumps
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1070453A
Other languages
Japanese (ja)
Inventor
Hisaki Yoshida
吉田　寿樹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kiyuuritsuku & Sofua Japan Kk
Original Assignee
Kiyuuritsuku & Sofua Japan Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kiyuuritsuku & Sofua Japan Kk filed Critical Kiyuuritsuku & Sofua Japan Kk
Priority to JP1070453A priority Critical patent/JPH02250327A/en
Publication of JPH02250327A publication Critical patent/JPH02250327A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/118—Post-treatment of the bump connector
    • H01L2224/1183—Reworking, e.g. shaping
    • H01L2224/11831—Reworking, e.g. shaping involving a chemical process, e.g. etching the bump connector
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
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    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1301—Shape
    • H01L2224/13016—Shape in side view
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13075—Plural core members
    • H01L2224/13078—Plural core members being disposed next to each other, e.g. side-to-side arrangements
    • H—ELECTRICITY
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/13124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
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    • H01L2924/01079—Gold [Au]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To easily form a wire bump by a method wherein a plurality of electrode parts are connected by wires by using a wire bonding apparatus and, after that, middle parts of the connected wires are dissolved and cut partly by using a chemical solvent. CONSTITUTION:Electrode parts 12 which are adjacent to each other on a semiconductor chip 11 are connected by bonding wires 13 by using a wire bonding apparatus. During this process, it is desirable that the bonding wires 13 connecting the mutually adjacent electrode parts 12 are formed to be arc-shaped. Then, when intermediate parts of the bonding wires 13 are dissolved and cut by using a chemical solvent, wire bumps 14 composed of the bonding wires 13 extended to be nearly V-shaped are formed on the electrode parts 12. As the chemical solvent, aqua regia is used when the bonding wires are gold wires, sodium hydroxide is used when they are aluminum wires and sulfuric acid is used when they are copper wires. Thereby, the bumps can be formed easily and at a low cost.

Description

【発明の詳細な説明】 （ａ、発明の目的） 〔産業上の利用分野〕 この発明は、半導体チップであって特にフリップチップ
構造のチップのボンディング方法におけるバンブの形成
方法に関し、特に、ワイヤボンディング装置を用いて結
線した後に化学的に処理してワイヤから成るバンブを形
成する半導体チップのワイヤバンプの形成方法に関する
ものである。Detailed Description of the Invention (a. Object of the Invention) [Industrial Field of Application] The present invention relates to a method for forming a bump in a bonding method for a semiconductor chip, particularly a chip having a flip-chip structure, and particularly relates to a method for forming a bump in a bonding method for a semiconductor chip, particularly a chip having a flip-chip structure. The present invention relates to a method for forming wire bumps on a semiconductor chip, in which bumps made of wire are formed by chemically processing the wires after connection using a device.

〔従来の技術〕[Conventional technology]

従来、半導体チップの電極部（ポンディングパッド）と
外部接続端子を接続する方法として、第２図に示すよう
なフリップチップ構造の半導体チップ２１の電極部２２
の上にメツキや蒸着法によって金属粒からなるバンブ２
３を形成した後（第２図＋１＋参照）、該半導体チップ
の表面を裏返しにして回路基板２４の外部接続端子２５
と導電性接着剤２６を介して直接接続する（第２図（２
）参照）フリップチップ・ボンディング方法がある。こ
のフリップチップ・ボンディング方法は、面接触になる
ため、接続強度が強く、また、一つの半導体チップは電
極部の数によらず、１回の操作でボンディングを終了で
きること、さらに、半導体チップの実装が極めて小容積
にできマルチチップに向くこと、接続配線を極端に短く
することができるため配線による信号遅延を殆ど無視で
きるという利点があるため、ＬＳＩの高速度・高集積化
に最適な方法として利用されている。Conventionally, as a method for connecting an electrode part (ponding pad) of a semiconductor chip to an external connection terminal, an electrode part 22 of a semiconductor chip 21 having a flip-chip structure as shown in FIG.
Bumps 2 made of metal grains are formed on top by plating or vapor deposition.
3 (see FIG. 2 +1+), turn the surface of the semiconductor chip over and connect the external connection terminals 25 of the circuit board 24.
and directly connected to each other via conductive adhesive 26 (see Fig. 2 (2)).
)) There is a flip-chip bonding method. This flip-chip bonding method has strong connection strength due to surface contact, and also allows bonding to be completed in one operation regardless of the number of electrode parts for one semiconductor chip. It has the advantage of being extremely small in volume, making it suitable for multi-chip applications, and connecting wiring can be extremely short, making signal delays caused by wiring almost negligible. Therefore, it is an optimal method for increasing the speed and integration of LSIs. It's being used.

しかしながら、このフリップチップ・ボンディング方法
は、金属粒からなるバンプを形成するために非常に複雑
で煩雑な工程を用いなければならないという欠点を有し
ている。また、金のバンプをメツキにより形成する場合
、ストレスが大きく固いため、バンブ形成後の半導体チ
ップ上の酸化膜等にクランクが発生したりすることがあ
り、半導体チップの信顛性上問題となっていた。さらに
、金のバンプの高さを高（すればクツション性が増し外
部接続端子と接続しやすくなり望ましいが、バンプの高
さを高くするためには、多くの量の金属を使用しなけれ
ばならず、それだけ製造コスト高にならざるを得なかっ
た。特に、金を用いてバンプを形成する場合には、その
傾向が顕著であった。さらに、フリップチップボンディ
ングの場合、各電極間の距離は一定にする必要があった
。However, this flip-chip bonding method has the disadvantage that a very complicated and complicated process must be used to form the bumps made of metal particles. In addition, when forming gold bumps by plating, the stress is large and the bumps are hard, so cranks may occur in the oxide film, etc. on the semiconductor chip after the bumps are formed, which poses problems in terms of the reliability of the semiconductor chip. was. Furthermore, it is desirable to increase the height of the gold bumps (this increases cushioning properties and makes it easier to connect with external connection terminals), but in order to increase the height of the bumps, a large amount of metal must be used. However, in the case of flip-chip bonding, the distance between each electrode was It needed to be constant.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

この発明の目的は、上記の従来技術の欠点を除去した、
半導体チップのワイヤバンプの形成方法を提供すること
にある。The object of the present invention is to eliminate the drawbacks of the above-mentioned prior art.
An object of the present invention is to provide a method for forming wire bumps on a semiconductor chip.

すなわち、この発明では、従来のように半導体チップの
電極部の上にメツキや蒸着法によって金属粒からなるバ
ンプを形成する代わりに、該半導体チップの上に形成さ
れている複数の電極部間をワイヤボンディング装置を用
いてワイヤで結線し、その後に化学溶剤で電極部間を結
線しているボンディングワイヤの中間部分を溶かして切
断することにより、従来方法における複雑で煩雑な工程
が省略でき、しかも全体として製造コストを安価に抑え
ることのできる半導体チップのワイヤバンプの形成方法
を提供することを目的としている。That is, in this invention, instead of forming bumps made of metal grains on the electrode portions of a semiconductor chip by plating or vapor deposition as in the conventional method, bumps made of metal grains are formed on the electrode portions of the semiconductor chip. By connecting the wires using a wire bonding device and then using a chemical solvent to melt and cut the intermediate portion of the bonding wire that connects the electrode parts, the complicated and troublesome steps of conventional methods can be omitted. It is an object of the present invention to provide a method for forming wire bumps on a semiconductor chip that can reduce overall manufacturing costs.

（ｂ１発明の構成） 〔問題点を解決するための手段〕 上記の目的を達成するために、本発明に係る半導体チッ
プのワイヤバンプの形成方法は、半導体チップの上に形
成されている複数の電極部間をワイヤボンディング装置
を用いてワイヤで結線し、その後に結線したワイヤの中
間を部分的に王水・水酸化ナトリウム・硫酸のうちの一
つの化学溶剤で溶解・切断してワイヤバンプを形成する
ものである。(B1 Structure of the Invention) [Means for Solving the Problems] In order to achieve the above object, a method for forming wire bumps on a semiconductor chip according to the present invention includes a method for forming wire bumps on a semiconductor chip. The parts are connected with a wire using a wire bonding device, and then the middle of the connected wire is partially dissolved and cut with a chemical solvent of aqua regia, sodium hydroxide, or sulfuric acid to form a wire bump. It is something.

〔実施例　〕〔Example 〕

以下、この発明に係る半導体チップのワイヤバンプの形
成方法を添付の図面に示されている一実施例に基づいて
詳細に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a method for forming wire bumps on a semiconductor chip according to the present invention will be described in detail based on an embodiment shown in the accompanying drawings.

第１図＋１）　＋２１は、この発明に係る半導体チップ
のフリップチップ・ボンディング方法におけるワイヤバ
ンプの形成方法の工程を示す図である。FIG. 1 +1) +21 is a diagram showing the steps of a wire bump forming method in a semiconductor chip flip-chip bonding method according to the present invention.

まず、ワイヤボンディング装置を用いて半導体チップ１
１上の互いに隣接する電極部（ポンディングパッド）１
２をボンディングワイヤ１３　（例えば、金線）で結線
する（第１図（１）参照）。この時、互いに隣接する電
極部１２を結線するボンディングワイヤ１３は１、第１
図（１）に示すように円弧形に形成されることが望まし
い。First, a semiconductor chip 1 is bonded using wire bonding equipment.
Electrode parts (ponding pads) adjacent to each other on 1
2 are connected with a bonding wire 13 (for example, gold wire) (see FIG. 1 (1)). At this time, the bonding wires 13 connecting the mutually adjacent electrode parts 12 are 1 and 1.
It is desirable to form it into an arc shape as shown in Figure (1).

次に、ワイヤボンディング装置で結線された半導体チッ
プ１１のボンディングワイヤ１３の中間部分（この実施
例においては、円弧形の頭頂部）を金線を溶融する為の
王水を用いて溶解・切断して電気的に独立させる。ボン
ディングワイヤ１３の中間部分を王水を用いて溶解・切
断すると、電極部１２上には、略Ｖ字状に延出されたボ
ンディングワイヤ１３から成るワイヤバンプ１４が形成
される（第１図（２）参照）。ワイヤバンプ１４の形状
は略■字状であるので、従来の金属粒から成るバンプに
比べて、多量の金属を使用しないでバンプの高さを高く
することが可能となり、クツション性が増して外部接続
端子と接続しやすくなる。また、使用する金属の総量が
少なくて済むため、全体として製造コストが抑制される
。なお、ボンディングワイヤを溶解・切断する化学溶剤
は、ボンディングワイヤの材質に応じて変更される。す
なわち、「金線」にあっては「王水」を、「アルミニウ
ム線」にあっては「水酸化ナトリウム」を、「銅線」に
あっては「硫酸」を使用することが出来る。また、ボン
ディングワイヤの溶解・切断後の形状が略■字状になる
ように、各電極間のボンディングワイヤの中間部分のみ
を溶解・切断することが望ましい。Next, the middle part (in this example, the top of the circular arc head part) of the bonding wire 13 of the semiconductor chip 11 connected by the wire bonding device is melted and cut using aqua regia for melting the gold wire. to make them electrically independent. When the middle portion of the bonding wire 13 is melted and cut using aqua regia, a wire bump 14 consisting of the bonding wire 13 extending in a substantially V-shape is formed on the electrode portion 12 (see FIG. 1(2)). )reference). Since the shape of the wire bump 14 is approximately ``■''-shaped, compared to conventional bumps made of metal grains, the height of the bump can be increased without using a large amount of metal, and the cushioning properties are increased, making it easier to connect externally. Easier to connect to terminals. Furthermore, since the total amount of metal used is small, overall manufacturing costs are suppressed. Note that the chemical solvent used to dissolve and cut the bonding wire is changed depending on the material of the bonding wire. That is, "regia" can be used for "gold wire", "sodium hydroxide" can be used for "aluminum wire", and "sulfuric acid" can be used for "copper wire". Further, it is desirable to melt and cut only the middle portion of the bonding wire between each electrode so that the shape of the bonding wire after melting and cutting becomes a substantially square-shaped shape.

ボンディングワイヤの切断方法としては、化学的方法の
他に機械的な切断方法も可能である。As a method for cutting the bonding wire, a mechanical cutting method is also possible in addition to a chemical method.

ボンディングワイヤ１３の中間部分を王水を用いて溶解
・切断してワイヤバンプ１４を形成した後は、従来のフ
リップチップ・ボンディング方法と同様に、半導体チッ
プ１１の表面を裏返しにしてワイヤバンプ１４部分を回
路基板等の外部接続端子と導電性接着剤を介して直接接
続する。After melting and cutting the middle portion of the bonding wire 13 using aqua regia to form the wire bump 14, the surface of the semiconductor chip 11 is turned over and the wire bump 14 portion is connected to the circuit, similar to the conventional flip-chip bonding method. Connect directly to external connection terminals such as a board via conductive adhesive.

以上、本発明によってなされた発明を一実施例に基づい
て具体的に説明したが、本発明は、上記実施例に限定さ
れるものではなく、その要旨を逸脱しない範囲で種々に
変更可能であることは言うまでもない。Although the invention made by the present invention has been specifically explained based on one embodiment, the present invention is not limited to the above embodiment, and can be modified in various ways without departing from the gist thereof. Needless to say.

（ｃ１発明の効果） この発明に係る半導体チップのワイヤバンプの形成方法
は上記詳述したような構成であるので、従来の問題点を
解消し、以下のような効果を有する。(c1 Effects of the Invention) Since the method for forming wire bumps on a semiconductor chip according to the present invention has the configuration as detailed above, it solves the conventional problems and has the following effects.

すなわち、半導体チップであって特にフリップチップ構
造の半導体の電極部にワイヤボンディングと変わらぬ容
易さをもってバンブを形成することができるという実用
的な効果を有する。また、メツキ等によって金属粒から
成るバンプを形成することを要しないので、半導体チッ
プ上の酸化膜等にクラックが発生することがなくなり、
全体として半導体チップの信頼性を向上させることがで
きるという効果も有する。また、構成する結線が短い事
も信頼性向上に繋がるものである。さらに、従来の金属
粒から成るバンブに比べて、多量の金属を使用しないの
で金属が外へもれ出ることもなく、バンプの高さを高く
することが可能となるので、クツション性が増して外部
接続端子と接続しやすくなるとともに、全体として製造
コストを抑制して安価な半導体装置を提供することがで
きるという効果をも有する。That is, it has the practical effect that a bump can be formed on the electrode portion of a semiconductor chip, especially a semiconductor having a flip-chip structure, with the same ease as wire bonding. In addition, since it is not necessary to form bumps made of metal particles by plating or the like, cracks do not occur in the oxide film on the semiconductor chip, etc.
This also has the effect of improving the reliability of the semiconductor chip as a whole. Furthermore, the shortness of the constituting wire connections also leads to improved reliability. Furthermore, compared to conventional bumps made of metal particles, since a large amount of metal is not used, the metal does not leak out, and the height of the bumps can be increased, resulting in improved cushioning properties. This has the effect that it becomes easier to connect to external connection terminals, and that overall manufacturing costs can be suppressed to provide an inexpensive semiconductor device.

【図面の簡単な説明】[Brief explanation of drawings]

第１図（１１（２）はこの発明に係る半導体チップのワ
イヤバンプの形成方法における各工程の断面図、第２図
＋１１は従来の金属粒から成るバンブを半導体チップの
電極部に形成した状態を示す断面図、第２図（２）は第
２図（１）のバンプが形成された半導体チップを回路基
板に接続した状態を示す断面図である。 １１．２１：半導体チップ １２．２２：電極部 １３：ボンディングワイヤ １４：ワイヤバンプ ２３：金属粒から成るバンプ ２４：回路基板　　　２５：外部接続端子２６：導電性
接着剤 特許出願人　　キューリンク・アンド・ソファ・ジャパ
ン株式会社Figure 1 (11(2)) is a cross-sectional view of each step in the method for forming wire bumps on a semiconductor chip according to the present invention, and Figure 2+11 shows a state in which bumps made of conventional metal particles are formed on the electrode portion of a semiconductor chip. 11.21: Semiconductor chip 12.22: Electrode Part 13: Bonding wire 14: Wire bump 23: Bump made of metal grains 24: Circuit board 25: External connection terminal 26: Conductive adhesive Patent applicant Q-Link & Sofa Japan Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims] 半導体チップの上に形成されている複数の電極部間をワ
イヤボンディング装置を用いてワイヤで結線し、その後
に結線したワイヤの中間を部分的に王水・水酸化ナトリ
ウム・硫酸のうちの一つの化学溶剤で溶解・切断してワ
イヤバンプを形成することを特徴とする半導体チップの
ワイヤバンプの形成方法。A wire bonding device is used to connect multiple electrode parts formed on a semiconductor chip, and then the middle of the connected wires is partially heated using one of aqua regia, sodium hydroxide, and sulfuric acid. A method for forming wire bumps on a semiconductor chip, the method comprising forming wire bumps by dissolving and cutting them using a chemical solvent.
JP1070453A 1989-03-24 1989-03-24 Formation of wire bump of semiconductor chip Pending JPH02250327A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1070453A JPH02250327A (en) 1989-03-24 1989-03-24 Formation of wire bump of semiconductor chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1070453A JPH02250327A (en) 1989-03-24 1989-03-24 Formation of wire bump of semiconductor chip

Publications (1)

Publication Number Publication Date
JPH02250327A true JPH02250327A (en) 1990-10-08

Family

ID=13431942

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1070453A Pending JPH02250327A (en) 1989-03-24 1989-03-24 Formation of wire bump of semiconductor chip

Country Status (1)

Country Link
JP (1) JPH02250327A (en)

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