JP2001068582A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a reliable semiconductor device by improving the junction strength between a ceramic substrate and a lead. SOLUTION: This semiconductor device is provided with a ceramic substrate 2, where a specific wiring is formed, a semiconductor chip 3 that is mounted to a prescribed site of the ceramic substrate 2 and is connected electrically to a plurality of terminal parts 4 which are provided at the ceramic substrate 2, a plurality of junction parts 5 that are provided near the end part of the ceramic substrate 2 and are connected electrically to the terminal part 4 via the wiring, a plurality of leads 8 that are electrically connected to the plurality of junction parts 5, and a resin-encapsulating part 9 for covering the wiring substrate 2, the semiconductor chip 3, and one portion of the above plurality of leads 8. The manufacturing is used to manufacture the semiconductor device. In this case, the junction between the ceramic substrate 2 and the lead 8 electrically connects the junction part 5 to the lead 8 via a conductive adhesive 7, and at the same time, glues and fixes the ceramic substrate 2 and the lead 8 via an insulation adhesive tape 10, thus improving the junction strength between the ceramic substrate 2 and the lead, and improving the reliability of the semiconductor device.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is effective when applied to a joining technique for joining a wiring board and a lead, and particularly to a joining technique for joining a wiring board on which a semiconductor chip is mounted and a lead in a semiconductor device using the wiring board. It is something.

[0002]

2. Description of the Related Art In recent years, semiconductor devices have tended to become smaller, thinner and have higher performance. For example, a plurality of electronic components such as semiconductor chips are mounted on a ceramic substrate (wiring substrate) on which a predetermined wiring pattern is formed. A semiconductor device configured as described above is being studied. As a semiconductor device using such a ceramic substrate, for example, JP-A-8-125101 is cited. As an outline, a semiconductor device using the ceramic substrate has a ceramic substrate on which a predetermined wiring pattern is formed in a substantially rectangular shape, and a wiring pattern mounted on a predetermined portion of the ceramic substrate and provided on the ceramic substrate. An electrically connected semiconductor chip;
The inner portion is processed so that the front end is bent downward and then bent upward, and has a substrate suspension portion for receiving and supporting the rear end portion of the ceramic substrate, wherein the substrate suspension portion is a wiring pattern of the ceramic substrate. A plurality of leads electrically connected to the wiring board via a conductive adhesive such as solder, the wiring board, a semiconductor chip mounted on the wiring board, and a resin integrally covering an inner portion of the plurality of leads. And a plurality of leads protruding in four directions from the resin sealing portion are formed in a gull wing shape.

In a semiconductor device using such a ceramic substrate, an inner portion of the lead and a wiring pattern of the ceramic substrate are generally electrically connected to a lead frame having a predetermined shape via a conductive adhesive such as solder. Forming a lead frame on which the ceramic substrate is mounted by connecting and supporting the ceramic substrate, and using the lead frame on which the ceramic substrate is mounted, a series of assembly steps such as die bonding, wire bonding, and resin sealing. After that, the semiconductor device is assembled.

[0004]

However, in a semiconductor device using a ceramic substrate constructed as described above, the lead having the inner portion bent is used to support the rear end of the ceramic substrate, and Although it is configured to be electrically connected to the wiring pattern of the wiring board via a conductive adhesive, the connection between the wiring pattern and the lead of the ceramic substrate is performed by electrically bonding the wiring pattern and the lead. It is only fixed by the agent. Therefore, when the lead frame on which the ceramic substrate is mounted is transported by vacuum suction during the process of die bonding and wire bonding, the suction pad that performs vacuum suction contacts the lead frame, and Mechanical stress is applied to the frame. Due to the mechanical stress applied to the lead frame, a mechanical stress is applied to a joint between the wiring pattern of the ceramic substrate and the lead, and there is a possibility that a bond peeling failure between the ceramic substrate and the lead may occur. The separation between the ceramic substrate and the lead may occur not only during the transportation of the lead frame, but also due to mechanical stress such as torsion or bending of the lead frame applied in various situations.

The problem of the peeling of the connection between the ceramic substrate and the lead is caused by increasing the supply amount of the conductive adhesive to be connected to the wiring pattern of the ceramic substrate, to a certain extent, the bonding strength between the wiring pattern and the lead. However, at present, semiconductor devices are becoming smaller, thinner and more sophisticated, the wiring pitch of the ceramic substrate is becoming finer, and the distance between the joints is becoming smaller. If this occurs, it may cause a short-circuit failure, and there is a limit in increasing the supply amount of the conductive adhesive. Also, with the fine pitch, the lead width of the lead also tends to be narrow, and the bonding strength between the ceramic substrate and the lead tends to be low.

An object of the present invention is to provide a bonding technique capable of improving the bonding strength between a ceramic substrate (wiring substrate) and a lead.

Another object of the present invention is to provide a highly reliable semiconductor device which can be reduced in size and thickness and has higher functions, etc., has improved bonding strength at the bonding portion between a ceramic substrate and a lead. That is.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0009]

The following is a brief description of an outline of a typical invention among the inventions disclosed in the present application.

[0010] That is, a wiring board on which a predetermined wiring is formed in a substantially square plate shape, and mounted on a predetermined portion of the wiring board and electrically connected to a plurality of terminal portions provided on the wiring board. A semiconductor chip, a plurality of joints provided near an end of the wiring board and electrically connected to a terminal of the wiring board via the wiring, and a plurality of joints electrically connected to the wiring board. A semiconductor device having a plurality of leads connected to the wiring board, a resin sealing portion covering a part of the wiring board, the semiconductor chip mounted on the wiring board and the plurality of leads, and a manufacturing technique thereof, The joint of the wiring board and a part of the lead are electrically connected via a conductive adhesive, and a portion along the joint of the wiring board and the other part of the lead are insulated. Pasted and fixed via the adhesive tape It is those who are.

In the above-mentioned semiconductor device and its manufacturing technology, the tip of the lead is downset to the wiring board, and the tip of the downset lead and the joint of the wiring board are electrically conductive. Are electrically connected via a conductive adhesive.

Further, in the semiconductor device and the manufacturing technique thereof, the bonding portion of the wiring board and a part of the lead are connected via a conductive adhesive formed in a bump shape or an anisotropic conductive adhesive tape. They are electrically connected.

Further, in the semiconductor device and the manufacturing technique thereof, the bonding portion is provided in a groove formed in the wiring board, and the leading end of the lead is bent to arrange the leading end of the lead in the groove. The joint of the groove and the tip of the lead are electrically connected via a conductive adhesive.

Further, in the semiconductor device and the manufacturing technique thereof, the semiconductor chip is mounted on a surface of the wiring substrate provided with a bonding portion.

[0015] In the semiconductor device and the manufacturing technique thereof, the semiconductor chip may include a plurality of semiconductor chips on the wiring board.
It is installed.

According to the above-described means, in the semiconductor device and the manufacturing technique thereof, the bonding portion of the wiring board and a part of the lead are electrically connected to each other via a conductive adhesive, and Since the portion of the substrate along the bonding portion and the other portion of the lead are adhered and fixed via an insulating adhesive tape, mechanical stress applied to the lead is reduced by the elastic force of the adhesive tape. And
The bonding strength between the lead and the wiring board can be improved and good bonding can be achieved.

Further, in the semiconductor device and the manufacturing technology thereof, the tip of the lead is downset to the wiring board side, and the tip of the downset lead and the joint of the wiring board are electrically conductive. By being electrically connected via the adhesive, the mechanical stress applied to the lead is not directly applied to the joint between the joint of the wiring board and the lead, and the joint of the wiring board and the lead And the joining strength can be further improved.

Further, in the above-mentioned semiconductor device and its manufacturing technique, the bonding portion of the wiring substrate and a part of the lead are electrically connected to each other via a conductive adhesive formed in a bump shape or an anisotropic conductive adhesive tape. The connection can easily join the joint of the wiring board and the lead without downsetting the tip of the lead.

In the semiconductor device and the manufacturing technique thereof, the bonding portion is provided in a groove formed in the wiring substrate, and the leading end of the lead is bent to form the leading end of the lead in the groove. Since the joint of the groove and the tip of the lead are electrically connected via a conductive adhesive, a short circuit between the joints can be prevented, and the supply amount of the conductive adhesive can be increased. And the bonding portion of the wiring board and the lead can be satisfactorily bonded.

Further, in the semiconductor device and the manufacturing technique thereof, the semiconductor chip is mounted on the surface of the wiring substrate on which the joint is provided, so that the injection balance of the sealing resin at the time of molding is improved. This can reduce unfilling of the sealing resin and generation of voids.

Further, in the semiconductor device and the manufacturing technique thereof, a plurality of the semiconductor chips are mounted on the wiring board, so that the bonding strength between the wiring board and the lead is improved to provide a high function or high capacity. A semiconductor device can be formed.

[0022]

Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1) A joining technique between a ceramic substrate (wiring substrate) and a lead according to the present invention is applied to a semiconductor device, for example, a QFP (Quad Flat Packag) using a ceramic substrate.
e) A case where the present invention is applied to a semiconductor device having a structure will be described.

FIG. 1 is a plan view showing a schematic configuration of a semiconductor device using a ceramic substrate according to an embodiment of the present invention. FIG. 2 is a cross-sectional view showing a schematic configuration between FIG. 1A-A ′ of a semiconductor device using a ceramic substrate according to one embodiment of the present invention.

Semiconductor device 1 according to one embodiment of the present invention
Has a substantially square plate-shaped ceramic substrate 2.
The ceramic substrate 2 is configured such that a predetermined wiring pattern (hereinafter, referred to as wiring) is formed of a conductive material such as aluminum or copper on a substrate made of ceramic, for example. In addition, one surface of the ceramic substrate 2 (the surface of the ceramic substrate on which a bonding portion described later is formed) 2a
A semiconductor chip 3 on which a predetermined circuit is formed is mounted on a predetermined portion, for example, a substantially central portion of the ceramic substrate 2. The semiconductor chip 3 has a plurality of electrode pads (not shown). The ceramic substrate 2 is provided with a plurality of terminal portions 4 in the vicinity of the mounting portion of the semiconductor chip 3 mounted on the one surface 2a, for example, in the portion along the periphery of the semiconductor chip 3. The plurality of terminal portions 4 are provided corresponding to each of the plurality of electrode pads of the semiconductor chip 3. One surface 2 of the ceramic substrate 2
The plurality of terminal portions 4 provided on the ceramic substrate 2 are connected to a lead bonding portion (hereinafter, referred to as a bonding portion) 5 provided near an end of one surface 2a of the ceramic substrate 2.
Are electrically connected to each other through the wiring. Further, the plurality of terminal portions 4 are electrically connected to a plurality of electrode pads of the semiconductor chip 3 mounted on the ceramic substrate 2 by, for example, being connected by wires 6. The joint 5 is electrically connected to a lead 8 via a conductive adhesive 7 such as solder. Further, the semiconductor device 1 has the ceramic substrate 2, the semiconductor chip 3 mounted on the ceramic substrate 2, and a resin sealing portion 9 integrally covering a part (inner portion) of the lead 8. The rear ends of the plurality of leads 8 are configured to project from four directions of the resin sealing portion 9, and the plurality of leads 8 projecting from the resin sealing portion 9 are formed in a gull wing shape. ing.

FIG. 3 is a cross-sectional view of a main part showing a bonding structure between a ceramic substrate and leads of a semiconductor device according to an embodiment of the present invention. The ceramic substrate 2 has one surface 2a.
An insulating adhesive tape 10 is provided at each end of the ceramic substrate 2, and the ceramic substrate 2 and the intermediate lead portion 8 b are adhered and fixed by the adhesive force of the adhesive tape 10.
The tip 8a of the lead is down-set on the ceramic substrate side, and the down-set lead 8a is disposed near the joint 5 of the ceramic substrate 2. The down-set lead tip 8a and the joint 5 of the ceramic substrate 2 are fixed by the conductive adhesive 7 such as solder as described above.

As described above, the joint between the ceramic substrate and the lead is fixed by bonding the tip of the lead to the ceramic substrate with a conductive adhesive, and the midway of the lead is bonded to the ceramic substrate with the adhesive tape. With such a configuration, the bonding strength between the ceramic substrate and the lead can be improved, and the effect of mechanical stress applied to the lead can be reduced by the elastic force of the adhesive tape. Also, by mechanically setting the lead tip and fixing the lead to the joint, the mechanical stress applied to the lead can be prevented from being directly applied to the joint between the ceramic substrate and the lead tip. . Further, since the bonding strength between the ceramic substrate and the leads can be improved, the reliability of the semiconductor device can be improved. In addition, since the bonding strength between the lead tip and the ceramic substrate can be improved without increasing the supply amount of the conductive adhesive, the fineness of the bonding portion caused by miniaturization, thinning, and high performance of the semiconductor device can be improved. It is possible to easily cope with pitching.

Next, a method of manufacturing a semiconductor device using a ceramic substrate according to an embodiment of the present invention will be described.

FIG. 4 is a plan view showing a unit frame structure of a lead frame used for manufacturing a semiconductor device according to an embodiment of the present invention.

The lead frame 11 is formed in a predetermined shape by pressing or etching a substrate made of, for example, copper or the like. The lead frame 11 has an outer frame portion 12 and a frame portion 13 forming a frame. The outer frame 12 has positioning holes 1 at predetermined intervals.
4 are formed so that the positioning holes 14 convey and position the lead frame 11. Further, a plurality of leads 8 are connected to the outer frame portion 12 and the frame portion 13, and the other ends of the plurality of leads 8, that is, the leading ends 8 a of the plurality of leads 8 are respectively connected to the lead frame 11. It extends toward the central part. The plurality of leads 8 are provided with a frame-shaped dam bar 15, which is configured to prevent the sealing resin from flowing out during the molding process. A plurality of such unit frames are connected to form the lead frame 11.

FIG. 5 is a cross-sectional view showing the downset processing on the lead frame. The lead frame 11 configured as described above is set in a predetermined portion of a lower die 16 of a molding die as shown in FIG. 5, for example. The lower mold 1
After being set to 6, the upper end 17 of the molding die is lowered, so that the lead tip 8a of the lead frame 11 is down-set.

FIG. 6 is a plan view showing a schematic configuration of a lead frame with a ceramic substrate. Next, the ceramic substrate 2 is mounted on the lead frame 11 in which the lead tip 8a has been downset. For mounting the ceramic substrate 2 on the lead frame 11, for example, a ceramic substrate 2 on which a predetermined wiring pattern is formed is prepared in advance, and an insulating adhesive tape 10 is attached to an end of one surface 2a of the ceramic substrate 2. Is pasted. As the adhesive tape 10, for example, a tape in which an adhesive layer is provided on both surfaces of a polyimide-based thin film substrate is used. Then, a conductive adhesive 7 such as solder is supplied to the bonding portion 5 of the ceramic substrate 2, and the bonding portion 5 and the downset processed lead tip 8 a are connected by the conductive adhesive 7. At the same time, the intermediate wiring portion 8b and the ceramic substrate 2 are adhered and fixed by the adhesive tape 10, so that the wiring substrate is mounted on the lead frame. Thus, the lead frame 11 with the ceramic substrate is prepared.

FIG. 7 is a sectional view showing an assembling flow of a semiconductor device using the lead frame with a ceramic substrate. The lead frame 11 on which the ceramic substrate 2 is mounted is configured as shown in FIG. Then, the lead frame 11 is shifted to a die bonding step, and the semiconductor chip 3 on which a predetermined circuit is formed is mounted on a predetermined portion of the ceramic substrate 2, for example, a substantially central portion of one surface 2a of the ceramic substrate 2. To mount the semiconductor chip 3 on the ceramic substrate 2, first, a resin-based adhesive mixed with, for example, Ag (silver) is supplied to a mounting portion of the semiconductor chip 3 on one surface 2a of the ceramic substrate 2, and the bonding is performed. The semiconductor chip 3 is bonded by the agent.
The bonded semiconductor chip 3 is fixed by baking at a predetermined temperature. Then, the lead frame 11 having the semiconductor chip 3 mounted on the ceramic substrate 2 is shifted to a wire bonding step.

The lead frame that has been shifted to the wire bonding step is such that the electrode pads of the semiconductor chip 3 mounted on the ceramic substrate 2 of the lead frame 11 and the terminal portions 4 of the ceramic substrate 2 are made of, for example, gold or copper. And are electrically connected. In this wire bonding step, after the tip of the wire 6 is melted and formed into a ball shape, ultrasonic vibration is applied while pressing the ball-shaped portion against the electrode pad, and the wires are joined. Next, the rear end of the wire 6 is ultrasonically bonded onto the terminal portion 4 of the ceramic substrate 2 so as to draw a predetermined loop shape. This operation is performed by repeating a predetermined cycle for all the electrode pads and the terminal portions 4. The lead frame 11 after the completion of the wire bonding step is configured as shown in FIG. Then, the lead frame 1 in which the wire bonding process is completed
1 is shifted to a molding process.

In this embodiment, as described above, the connection between the ceramic substrate and the lead is performed by down-setting the tip of the lead and connecting the ceramic substrate to the lead with a conductive adhesive. Since the intermediate portion is configured to be adhered and fixed by the adhesive tape, the bonding strength between the ceramic substrate and the lead is improved. Therefore, during the die bonding and the wire bonding, when the lead frame on which the ceramic substrate is mounted is conveyed, the mechanical stress applied to the lead due to the contact of the suction pad or the like is reduced, and the bond peeling caused by the mechanical stress is reduced. Can be satisfactorily reduced.

Next, the resin sealing portion 9 is formed on the lead frame 11 which has been transferred to the molding step, for example, by a transfer molding method. In the molding step, the lead frame 11 on which the wire bonding has been completed is clamped by, for example, a pair of upper and lower mold dies (not shown). A sealing resin melted from a gate (not shown), for example, an epoxy resin, or the like is injected into the mold mold thus clamped into a cavity (not shown) for molding the outer shape of the semiconductor device. After the cavity is completely filled with the sealing resin, the cavity is held for a certain period of time, whereby the sealing resin is cured by the heat of the mold, and the lead frame 11 is hardened as shown in FIG. As shown, the ceramic substrate 2, the semiconductor chip 3 mounted on the ceramic substrate 2, and a resin sealing portion 9 that integrally covers a part of the lead 8 are formed. In this embodiment, since the ceramic substrate 2 is mounted on the lead frame 11 and the semiconductor chip 3 is mounted on one surface 2a of the ceramic substrate 2, the injection balance of the sealing resin during molding is maintained. Is improved, and unfilling of the sealing resin and generation of voids can be reduced.

Next, the lead frame 11 having undergone the molding process is subjected to the outer frame 12, the frame portion 13 and the dam bar 15 so that the plurality of leads 8 protruding from the resin sealing portion 9 become independent in the cutting / molding process. Is removed by cutting. The plurality of leads 8 protruding from the resin sealing portion 9 are formed into a gull-wing shape by a molding die (not shown), and the QFP semiconductor device 1 shown in FIG.
Is obtained.

[0038] The lead whose tip is downset and the ceramic substrate are electrically connected with a conductive adhesive, and the lead and the ceramic substrate are adhered and fixed with an adhesive tape. A highly reliable semiconductor device can be manufactured by forming a device and reducing the occurrence of bond peeling due to the mechanical stress. Further, since the lead tip portion is configured to be subjected to downset processing, it is difficult for the lead portion to come off from the resin sealing portion, and it is possible to reduce the occurrence of lead missing failure.

(Embodiment 2) A joining technique between a ceramic substrate (wiring board) and a lead according to another embodiment of the present invention is described below.
For example, a case where the present invention is applied to a semiconductor device having a QFP structure using a ceramic substrate will be described.

FIG. 8 is a sectional view showing a schematic configuration of a semiconductor device using a ceramic substrate according to another embodiment of the present invention.

In the semiconductor device 1 of this embodiment, as in the first embodiment, one surface 2a of the ceramic substrate 2 is provided.
A semiconductor chip 3 is mounted on a predetermined portion of the semiconductor chip 3. The electrode pads of the semiconductor chip 3 and the plurality of terminal portions 4 of the ceramic substrate 2 are connected by wires 6 and are electrically connected. The plurality of terminal portions 4 provided on one surface 2a of the ceramic substrate 2 are electrically connected to the bonding portion 5 provided on one surface 2a of the ceramic substrate 2 via a wiring pattern of the ceramic substrate 2 respectively. It is connected. The joints 5 are electrically connected to the corresponding lead tips 8a of the leads 8 via, for example, metal bumps 18 (conductive adhesive formed in a bump shape). The semiconductor device 1 includes a ceramic substrate 2 and a semiconductor chip 3 mounted on the ceramic substrate 2.
Further, a resin sealing portion 9 integrally covering a part of the lead 8 is provided. A plurality of leads 8 are projected from each of the four directions of the resin sealing portion 9, and the projected leads 8 are formed in a gull-wing shape.

FIG. 9 is a cross-sectional view of a principal part showing a joint between a ceramic substrate and a lead of a semiconductor device according to another embodiment of the present invention. The bonding portion between the ceramic substrate 2 and the lead 8 is provided with an insulating adhesive tape 10 at an end of one surface 2a of the ceramic substrate 2 as in the first embodiment, and is bonded and fixed by the adhesive tape 10. Have been. In the present embodiment, a lead tip 8a of the lead 8 is provided.
Are not down-set, but are joined by, for example, metal bumps 18 provided in advance to the joints 5 of the ceramic substrate 2. The metal bump 18 is made of, for example, a conductive material such as solder formed in a bump shape.

As described above, the connection between the ceramic substrate and the lead is performed by connecting the tip of the lead and the ceramic substrate with a metal bump and attaching and fixing the ceramic substrate and the intermediate portion of the lead with an adhesive tape. With this configuration, it is possible to easily connect the bonding portion of the wiring board and the lead without downsetting the lead end portion, and mechanically acting on the lead by the elastic force of the adhesive tape. The influence of stress can be reduced, and the bonding strength between the ceramic substrate and the lead can be improved. In addition, since the downset processing is not performed on the lead tip, variation in the lead tip can be reduced.

Next, a method of manufacturing a semiconductor device using a ceramic substrate according to another embodiment of the present invention will be described.

FIG. 10 is a sectional view showing a flow of forming a lead frame with a ceramic substrate used for manufacturing a semiconductor device according to another embodiment of the present invention. First, the ceramic substrate 2 on which the predetermined wiring pattern is formed is
0 (a), one surface 2a of the ceramic substrate 2
Is adhered to the end of the insulating adhesive tape 10. Then, the ceramic substrate 2 to which the adhesive tape 10 is attached is
As shown in FIG. 10B, one surface 2 of the ceramic substrate 2
a, a metal ball is thermocompression-bonded on each of the plurality of joints 5 provided on the
8 is mounted. The ceramic substrate 2 on which the metal bumps 18 are mounted is connected to the lead frame 11 configured in the same manner as in the first embodiment by connecting the joining portion 5 of the ceramic substrate 2 and the lead end 8a by the metal bumps 18. The ceramic substrate 2 and the middle part 8b of the lead
Is adhered and fixed by the adhesive tape 10. Thus, the lead frame 11 with the ceramic substrate as shown in FIG. 10C is prepared.

FIG. 11 is a sectional view showing an assembly flow of a semiconductor device according to another embodiment of the present invention. The lead frame 11 with the ceramic substrate prepared in advance is transferred to the die bonding step in the same manner as in the first embodiment, and as shown in FIG.
The semiconductor chip 3 is mounted on a predetermined portion of the one surface 2a.
Then, the lead frame 11 having the semiconductor chip 3 mounted on the ceramic substrate 2 is shifted to a wire bonding step, and is provided on the electrode pads of the semiconductor chip 3 mounted on one surface 2 a of the ceramic substrate 2 and the ceramic substrate 2. The terminals 4 of the wiring pattern are connected by wires 6 respectively. The lead frame 11 after the completion of the wire bonding step is configured as shown in FIG.

In this embodiment, the ceramic substrate and the lead are joined by connecting the ceramic substrate and the lead end portion with conductive metal bumps, and attaching the ceramic substrate and the lead halfway with an adhesive tape. Since it is configured to be fixedly attached, mechanical stress or the like applied to the lead can be reduced by the elastic force of the adhesive tape without downset processing of the lead, and the occurrence of bonding peeling is improved. Can be reduced.

Next, the lead frame 11 on which the wire bonding has been completed is transferred to a molding step. In the molding step, for example, a transfer molding method is used as shown in FIG.
As shown in FIG. 1C, a resin sealing portion 9 that integrally covers the ceramic substrate 2, the semiconductor chip 3 mounted on the ceramic substrate 2, and a part of the leads 8 is formed. Next, the lead frame 11 in which the molding process is completed is subjected to the cutting process by cutting the outer frame 12, the frame portion 13 and the dam bar 15 so that the plurality of leads 8 protruding from the resin sealing portion 9 become independent in the cutting / molding process. The resin sealing portion 9 is removed.
The plurality of leads 8 protruding from the mold are formed into a gull-wing shape by a molding die (not shown), and a QFP semiconductor device 1 as shown in FIG. 11D is obtained.

As described above, the leads and the ceramic substrate are connected by the metal bumps, and the leads and the ceramic substrate are adhered and fixed by the adhesive tape to form a semiconductor device. ,
Further, the occurrence of peeling of bonding due to mechanical stress can be reduced, and a highly reliable semiconductor device can be manufactured.

In the present embodiment, the lead tip and the lead connecting portion of the ceramic substrate are joined by using metal bumps. However, an arrangement is made in which an anisotropic conductive adhesive tape is used. Is also possible.

(Embodiment 3) Next, an application example in which the bonding technique of a ceramic substrate (wiring board) and a lead according to one embodiment of the present invention is applied to a semiconductor device having a QFP structure using a ceramic substrate, for example. explain.

FIG. 12 is a sectional view showing a schematic structure of a semiconductor device as an application example of the present invention. The semiconductor device 1 of the present embodiment has a ceramic substrate 2 similarly to the first embodiment, and a plurality of semiconductor chips 3 are mounted on the ceramic substrate 2. The semiconductor chip 3 mounted on the ceramic substrate has, for example, one semiconductor chip 3 mounted on each of predetermined portions of one surface 2a and the other surface 2b of the ceramic substrate 2. This ceramic substrate 2
For example, the semiconductor chip 3 mounted on one side has a memory on one side 2a, a CPU on the other side 2b, or a memory on both sides. The ceramic substrate 2 has a plurality of terminal portions 4 formed on the one surface 2a and the other surface 2b in the vicinity of the mounted semiconductor chip 3, respectively. The plurality of terminal portions 4 provided on the one surface and the other surface 2b are provided corresponding to the electrode pads of the semiconductor chip 3 mounted on the surfaces. The plurality of terminal portions 4 provided on one surface 2a and the other surface 2b of the ceramic substrate 2 are connected to the lead joint portion 5 provided at the end of the one surface 2a of the ceramic substrate 2 and the wiring of the ceramic substrate 2 respectively. They are electrically connected via a pattern. The lead joints 5 are electrically connected to the corresponding lead tips 8a via conductive adhesives 7, respectively. In the semiconductor device 1, a resin sealing portion 9 is formed, and a plurality of leads 8 projecting from four directions of the resin sealing portion 9 are formed in a gull wing shape.

In this embodiment, one semiconductor chip is mounted on one surface and the other surface of the ceramic substrate. However, a plurality of semiconductor chips are mounted on one surface and the other surface of the ceramic substrate. Or FIG.
As shown in (1), a plurality of semiconductor chips 3 can be mounted on only one surface 2a of the ceramic substrate 2.

As described above, the bonding between the ceramic substrate 2 and the leads 8 is performed by bonding and fixing the lead end 8a to the ceramic substrate 2 with the conductive adhesive 7, and further connecting the intermediate lead 8b to the ceramic substrate 2. And a plurality of semiconductor chips 3 mounted on the ceramic substrate 2, thereby improving the bonding strength between the ceramic substrate 2 and the leads 8. A high-performance or high-capacity semiconductor device 1 can be configured.

As described above, the invention made by the present inventor has been specifically described based on the embodiments. However, the present invention is not limited to the above embodiments, and can be variously modified without departing from the gist thereof. Needless to say. For example, in this embodiment, a case has been described in which the present invention is applied to a semiconductor device having a QFP structure using a ceramic substrate (wiring substrate). However, if the semiconductor device has a connection structure between a ceramic substrate and leads, an SOP (Small Outline Packag) is used.
e), SOJ (Small Outline J-leaded Package), etc.
The present invention may be applied to a semiconductor device having any structure.

In the present embodiment, as shown in Embodiments 1 and 2, a ceramic substrate is mounted on a lead frame, and a lead frame with a ceramic substrate is formed to prepare the lead frame with a ceramic substrate. The first embodiment and the second embodiment
By purchasing a lead frame with a ceramic substrate as shown in (1), the lead frame with a ceramic substrate may be prepared.

Further, in the present embodiment, the lead end is down-set and connected to the bonding portion of the ceramic substrate by a conductive adhesive. However, in the present invention, the middle of the lead is bonded to the ceramic substrate. Any structure may be used as long as it is connected by a tape and the lead end of the lead is electrically connected to the lead joint of the ceramic substrate. For example, as shown in FIG. And the intermediate lead portion 8b are adhered and fixed by the adhesive tape 10 and the ceramic substrate 2
A plurality of grooves 19 are provided on one surface 2a, and the joints 5 are respectively arranged in the grooves 19, and the lead tip 8a is bent toward the ceramic substrate side, and the lead tip is formed in the groove 20. Arrange the lead tip 8
a may be bonded and fixed with a conductive adhesive 7.
Thus, a joint is provided in the groove of the ceramic substrate,
By connecting the bent leads with a conductive adhesive, there is no problem of short circuit between the joints, the supply amount of the conductive adhesive can be increased, and the ceramic substrate and the leads can be satisfactorily separated. Can be connected.

Further, in this embodiment, the vicinity of the forefront portion of the lead is configured to be connected to the bonding portion of the wiring board, but may be configured as shown in FIG.

Further, in the present embodiment, the semiconductor chip is mounted on the ceramic substrate, and the terminal portions of the ceramic substrate and the electrode pads of the semiconductor chip are electrically connected by wires. A metal bump may be formed on an electrode pad of a semiconductor chip, and the bump may be mounted on the ceramic substrate by face-down bonding to make an electrical connection.

In this embodiment, the case where the ceramic substrate is used as the wiring substrate has been described. However, it is also possible to use an insulating substrate such as a glass epoxy substrate.

[0061]

The effects obtained by typical ones of the inventions disclosed in the present application will be briefly described as follows.

That is, a wiring board on which a predetermined wiring is formed in a substantially rectangular plate shape, and mounted on a predetermined portion of the wiring board and electrically connected to a plurality of terminal portions provided on the wiring board. A semiconductor chip, a plurality of joints provided near an end of the wiring board and electrically connected to a terminal of the wiring board via the wiring, and a plurality of joints electrically connected to the wiring board. A semiconductor device having a plurality of leads connected to the wiring board, a resin sealing portion covering a part of the wiring board, the semiconductor chip mounted on the wiring board and the plurality of leads, and a manufacturing technique thereof, The joint of the wiring board and a part of the lead are electrically connected via a conductive adhesive, and a portion along the joint of the wiring board and the other part of the lead are insulated. Pasted and fixed via the adhesive tape By there, it can improve the bonding strength between the wiring board and the lead. Further, since the bonding strength can be improved, the bonding peeling failure between the wiring board and the lead can be reduced, and the reliability of the semiconductor device can be improved.

[Brief description of the drawings]

FIG. 1 is a plan view illustrating a schematic configuration of a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating a schematic configuration of a semiconductor device according to an embodiment of the present invention.

FIG. 3 is a fragmentary cross-sectional view showing a bonding structure between a ceramic substrate and leads in a semiconductor device according to an embodiment of the present invention.

FIG. 4 is a plan view showing a unit frame configuration of a lead frame used for manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 5 is a cross-sectional view showing a downsetting process for a lead end portion of a lead frame.

FIG. 6 is a plan view showing a schematic configuration of a lead frame with a ceramic substrate.

FIG. 7 is a sectional view showing an assembling flow of a semiconductor device using a lead frame with a ceramic substrate.

FIG. 8 is a cross-sectional view illustrating a schematic configuration of a semiconductor device according to another embodiment of the present invention.

FIG. 9 is a fragmentary cross-sectional view showing a joint structure between a ceramic substrate and leads in a semiconductor device according to another embodiment of the present invention.

FIG. 10 is a cross-sectional view showing a flow of forming a lead frame with a ceramic substrate used in a semiconductor device according to another embodiment of the present invention.

FIG. 11 is a cross-sectional view showing an assembly flow of a semiconductor device using a lead frame with a ceramic substrate according to another embodiment of the present invention.

FIG. 12 is a sectional view showing a modification of the semiconductor device according to the embodiment of the present invention;

FIG. 13 is a sectional view showing another modification of the semiconductor device according to the embodiment of the present invention;

FIG. 14 is a fragmentary cross-sectional view showing a modified example of the joint structure between the ceramic substrate and the leads in the semiconductor device according to one embodiment of the present invention;

FIG. 15 is a fragmentary cross-sectional view showing another modified example of the bonding structure between the ceramic substrate and the leads in the semiconductor device according to the embodiment of the present invention;

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 2 ... Ceramic substrate (wiring board), 2
a: one surface of the ceramic substrate, 2b: the other surface of the ceramic substrate, 3: semiconductor chip, 4 ... terminal portion, 5 ... lead joint portion, 6 ... wire, 7 ... conductive adhesive, 8 ... lead, 8a
... Lead tip, 8b ... Lead middle part, 9 ... Resin sealing part, 10 ... Adhesive tape, 11 ... Lead frame, 12 ...
Outer frame portion, 13: Frame portion, 14: Positioning hole, 15: Dam bar, 16: Lower mold, 17: Upper mold, 1
8 ... metal bump (bump-shaped conductive adhesive), 19 ...
Groove.

Claims (15)

[Claims] A wiring board on which a predetermined wiring is formed in a substantially rectangular plate shape; and a wiring board mounted on a predetermined portion of the wiring board and electrically connected to a plurality of terminal portions provided on the wiring board. A semiconductor chip, provided near an end of the wiring board;
A plurality of bonding portions electrically connected to the terminal portion of the wiring board via the wiring, a plurality of leads electrically connected to the plurality of bonding portions of the wiring board, the wiring substrate, and the wiring; A semiconductor device having a semiconductor chip mounted on a substrate and a resin sealing portion covering a part of the plurality of leads, wherein a bonding part of the wiring board and a part of the lead are connected via a conductive adhesive. And a portion along the joint of the wiring board and another portion of the lead are adhered and fixed via an insulating adhesive tape. . 2. The tip of the lead is downset to the wiring board side, and the tip of the downset lead and the joint of the wiring board are electrically connected via a conductive adhesive. The semiconductor device according to claim 1, wherein the semiconductor device is connected. 3. The method according to claim 1, wherein the bonding portion of the wiring board and a part of the lead are electrically connected via a conductive adhesive formed in a bump shape or an anisotropic conductive adhesive tape. The semiconductor device according to claim 1, wherein: 4. The bonding portion is provided in a groove formed in the wiring substrate, and the tip of the lead is bent to form a leading end of the lead in the groove. 2. The semiconductor device according to claim 1, wherein the tip of the lead is electrically connected to the lead via a conductive adhesive. 5. The semiconductor device according to claim 1, wherein said semiconductor chip is mounted on a surface of said wiring board on which a joint is provided. 6. The semiconductor device according to claim 1, wherein a plurality of said semiconductor chips are mounted on said wiring board. 7. A wiring board in which predetermined wiring is formed in a substantially rectangular plate shape, a plurality of terminals provided on the wiring board, and the plurality of terminals provided near an end of the wiring board. And a plurality of joints electrically connected to each other via the wiring, a plurality of leads electrically connected to the plurality of joints via a conductive adhesive, the lead and the wiring board, Preparing a lead frame with a wiring board having an insulating adhesive tape for attaching and fixing the semiconductor chip to the wiring board of the lead frame with the wiring board, and electrically connecting the semiconductor chip and the terminal portion to each other. A method for manufacturing a semiconductor device, comprising: a step of forming a resin sealing portion covering a part of the wiring substrate, the semiconductor chip, and a part of the lead; 8. The plurality of leads have their distal ends down-set to the wiring board side, and electrically connect the down-set distal end to the joint portion of the wiring board via a conductive adhesive. 8. The connection according to claim 7,
The manufacturing method of the semiconductor device described in the above. 9. The method of manufacturing a semiconductor device according to claim 7, wherein said conductive adhesive is a conductive adhesive formed in a bump shape or an anisotropic conductive adhesive tape. 10. A method according to claim 1, wherein the plurality of joints are provided in a groove formed in the wiring board, and a tip of the lead is bent toward the wiring board. 8. The method for manufacturing a semiconductor device according to claim 7, wherein the bonding portion of the wiring board is electrically connected via a conductive adhesive. 11. A step of preparing a lead frame with a wiring board, comprising: a lead frame having a plurality of leads having a rear end connected to a frame and a front end extending substantially toward the center of the frame; A step of preparing the wiring substrate having the plurality of terminal portions and the joining portion; a step of downsetting a tip portion of the lead; and adhering the lead and the wiring substrate via an insulating adhesive tape. Mounting the wiring board on the lead frame by fixing and electrically connecting the leading end of the lead and the joint of the wiring board via a conductive adhesive. A method for manufacturing a semiconductor device according to claim 7. 12. A step of preparing a lead frame with a wiring board, comprising: a lead frame having a plurality of leads having a rear end connected to a frame and a front end extending substantially toward the center of the frame. Preparing the wiring substrate having the plurality of terminal portions and the bonding portion, mounting metal balls on the plurality of bonding portions, and forming a bump-shaped conductive adhesive on the bonding portion; Attaching and fixing the lead and the wiring board via an insulating adhesive tape, and by electrically connecting the leading end of the lead and the joint of the wiring board via a bump-shaped conductive adhesive, 8. The method according to claim 7, further comprising the step of mounting a wiring board on the lead frame. 13. A step of preparing a lead frame with a wiring board, comprising: a lead frame having a plurality of leads having a rear end connected to a frame and a front end extending substantially toward the center of the frame; A step of preparing the plurality of terminals and the wiring board having a joint provided in a groove on one surface thereof, and a step of bending a tip end of the lead;
The lead and the wiring board are adhered and fixed via an insulating adhesive tape, and the front end of the bent lead and the joint provided in the groove are electrically connected via a conductive adhesive. 8. The method of manufacturing a semiconductor device according to claim 7, further comprising the step of mounting a wiring board on said lead frame by making the connection. 14. The method of manufacturing a semiconductor device according to claim 7, wherein said semiconductor chip is mounted on a surface of said wiring board provided with a joint. 15. The method according to claim 7, wherein a plurality of said semiconductor chips are mounted on said wiring board.