JPH0223519B2 - - Google Patents

Info

Publication number
JPH0223519B2
JPH0223519B2 JP59182435A JP18243584A JPH0223519B2 JP H0223519 B2 JPH0223519 B2 JP H0223519B2 JP 59182435 A JP59182435 A JP 59182435A JP 18243584 A JP18243584 A JP 18243584A JP H0223519 B2 JPH0223519 B2 JP H0223519B2
Authority
JP
Japan
Prior art keywords
crucible
single crystal
raw material
material melt
partition plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59182435A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6158884A (ja
Inventor
Minoru Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GAKEI DENKI SEISAKUSHO
Original Assignee
GAKEI DENKI SEISAKUSHO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GAKEI DENKI SEISAKUSHO filed Critical GAKEI DENKI SEISAKUSHO
Priority to JP18243584A priority Critical patent/JPS6158884A/ja
Priority to EP84111305A priority patent/EP0173764B1/en
Priority to DE8484111305T priority patent/DE3480721D1/de
Priority to US06/675,409 priority patent/US4874458A/en
Publication of JPS6158884A publication Critical patent/JPS6158884A/ja
Priority to US07/102,373 priority patent/US4832922A/en
Publication of JPH0223519B2 publication Critical patent/JPH0223519B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP18243584A 1984-08-31 1984-08-31 単結晶の育成方法 Granted JPS6158884A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP18243584A JPS6158884A (ja) 1984-08-31 1984-08-31 単結晶の育成方法
EP84111305A EP0173764B1 (en) 1984-08-31 1984-09-21 Single crystal growing method and apparatus
DE8484111305T DE3480721D1 (de) 1984-08-31 1984-09-21 Verfahren und vorrichtung zur herstellung von einkristallen.
US06/675,409 US4874458A (en) 1984-08-31 1984-11-27 Single crystal growing method having improved melt control
US07/102,373 US4832922A (en) 1984-08-31 1987-09-29 Single crystal growing method and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18243584A JPS6158884A (ja) 1984-08-31 1984-08-31 単結晶の育成方法

Publications (2)

Publication Number Publication Date
JPS6158884A JPS6158884A (ja) 1986-03-26
JPH0223519B2 true JPH0223519B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-05-24

Family

ID=16118216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18243584A Granted JPS6158884A (ja) 1984-08-31 1984-08-31 単結晶の育成方法

Country Status (1)

Country Link
JP (1) JPS6158884A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8307023D0 (en) * 1983-03-15 1983-04-20 Minnesota Mining & Mfg Dye bleach system

Also Published As

Publication number Publication date
JPS6158884A (ja) 1986-03-26

Similar Documents

Publication Publication Date Title
US4874458A (en) Single crystal growing method having improved melt control
JPH03122097A (ja) 単結晶の２‐６族または３‐５族化合物の製造法及びそれより作られる製品
JP2008105896A (ja) ＳｉＣ単結晶の製造方法
US5047113A (en) Method for directional solidification of single crystals
JP2003286024A (ja) 一方向凝固シリコンインゴット及びこの製造方法並びにシリコン板及び太陽電池用基板及びスパッタリング用ターゲット素材
JP2529934B2 (ja) 単結晶の製造方法
JPS6117798B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0223519B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2758038B2 (ja) 単結晶製造装置
JP3018738B2 (ja) 単結晶製造装置
JP2734820B2 (ja) 化合物半導体単結晶の製造方法
JPH0223520B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP3042168B2 (ja) 単結晶製造装置
JP2542434B2 (ja) 化合物半導体結晶の製造方法および製造装置
JPH03193689A (ja) 化合物半導体の結晶製造方法
JPS60122791A (ja) 液体封止結晶引上方法
JPS6217496Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2700145B2 (ja) 化合物半導体単結晶の製造方法
JPS63107887A (ja) 単結晶引上げ用るつぼ
JPH11130579A (ja) 化合物半導体単結晶の製造方法及びその製造装置
JPH0243718B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS62119198A (ja) 磁場印加単結晶回転引き上げ装置
JP2637210B2 (ja) 単結晶成長方法及び装置
JPS62197389A (ja) 化合物半導体単結晶の製造装置
JPH01145395A (ja) 化合物半導体単結晶の製造方法