JPH02217395A - 結晶質窒化珪素塊状体 - Google Patents

結晶質窒化珪素塊状体

Info

Publication number
JPH02217395A
JPH02217395A JP24887089A JP24887089A JPH02217395A JP H02217395 A JPH02217395 A JP H02217395A JP 24887089 A JP24887089 A JP 24887089A JP 24887089 A JP24887089 A JP 24887089A JP H02217395 A JPH02217395 A JP H02217395A
Authority
JP
Japan
Prior art keywords
massive body
beta
crystal
temperature
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24887089A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0357075B2 (enrdf_load_stackoverflow
Inventor
Toshio Hirai
平井 敏雄
Shinsuke Hayashi
林 真輔
Akira Okubo
昭 大久保
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP55121690A external-priority patent/JPS5747706A/ja
Application filed by Individual filed Critical Individual
Priority to JP24887089A priority Critical patent/JPH02217395A/ja
Publication of JPH02217395A publication Critical patent/JPH02217395A/ja
Publication of JPH0357075B2 publication Critical patent/JPH0357075B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP24887089A 1980-09-04 1989-09-25 結晶質窒化珪素塊状体 Granted JPH02217395A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24887089A JPH02217395A (ja) 1980-09-04 1989-09-25 結晶質窒化珪素塊状体

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP55121690A JPS5747706A (en) 1980-09-04 1980-09-04 Lump of silicon nitride containing ti and its manufacture
JP24887089A JPH02217395A (ja) 1980-09-04 1989-09-25 結晶質窒化珪素塊状体

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP55121690A Division JPS5747706A (en) 1980-09-04 1980-09-04 Lump of silicon nitride containing ti and its manufacture

Publications (2)

Publication Number Publication Date
JPH02217395A true JPH02217395A (ja) 1990-08-30
JPH0357075B2 JPH0357075B2 (enrdf_load_stackoverflow) 1991-08-30

Family

ID=26458984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24887089A Granted JPH02217395A (ja) 1980-09-04 1989-09-25 結晶質窒化珪素塊状体

Country Status (1)

Country Link
JP (1) JPH02217395A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0357075B2 (enrdf_load_stackoverflow) 1991-08-30

Similar Documents

Publication Publication Date Title
US4118539A (en) Super hard-highly pure silicon nitrides having a preferred crystal face orientation
US4469801A (en) Titanium-containing silicon nitride film bodies and a method of producing the same
EP0216932B1 (en) Rhombohedral polycrystalline boron nitride and process for its production
US4585704A (en) Electrically conductive Si3 N4 --C series amorphous material and a method of processing the same
US4594330A (en) Fine amorphous powder and process for preparing fine powdery mixture of silicon nitride and silicon carbide
JPS5913442B2 (ja) 高純度の型窒化珪素の製造法
Lin et al. The growth characteristics of chemical vapour-deposited β-SiC on a graphite substrate by the SiCl4/C3H8/H2 system
JPH02217395A (ja) 結晶質窒化珪素塊状体
JPH02217394A (ja) 結晶質窒化珪素塊状体
JP2801485B2 (ja) 複合体およびその製法
JPH025712B2 (enrdf_load_stackoverflow)
JPH02120213A (ja) 窒化珪素塊状体
JPS58199707A (ja) 結晶質窒化ケイ素粉末の製法
JPS58115011A (ja) 超硬高純度の非晶質窒化珪素とその製造方法
JPH01252780A (ja) 窒化ホウ素被覆体及びその製造方法
JPS5988306A (ja) 超硬高純度窒化珪素の製造方法
JPH03247506A (ja) 多結晶炭化珪素
JPH0310562B2 (enrdf_load_stackoverflow)
JPS63159204A (ja) 非晶質球状複合粉末およびその製造法
JP2528928B2 (ja) 炭化けい素−窒化けい素複合膜の製造方法
JPH01252520A (ja) ホウ素、炭素、窒素からなる繊維およびその製造法
Dirkx PHASE BEHAVIOR IN THE SILICON-BORON SYSTEM: PREPARATION OF SILICON BORIDES BY CHEMICAL VAPOR DEPOSITION (THERMODYNAMICS, CVD, MORPHOLOGY, REACTOR DESIGN, EQUILIBRIUM CALCULATIONS)
JPH0624877A (ja) 炭素基材への炭素質皮膜形成法
JPS6048447B2 (ja) 超硬高純度の微粒多結晶質窒化珪素
JPS60221311A (ja) 非晶質複合粉末組成物