JPH02203555A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH02203555A JPH02203555A JP2434289A JP2434289A JPH02203555A JP H02203555 A JPH02203555 A JP H02203555A JP 2434289 A JP2434289 A JP 2434289A JP 2434289 A JP2434289 A JP 2434289A JP H02203555 A JPH02203555 A JP H02203555A
- Authority
- JP
- Japan
- Prior art keywords
- case
- heat sink
- periphery
- dissipating plate
- bonded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 210000000078 claw Anatomy 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 4
- 238000005219 brazing Methods 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 239000000945 filler Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 abstract description 7
- 230000001070 adhesive effect Effects 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体装置に関し、特にケースと放熱板の
接着構造を提供するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a semiconductor device, and particularly provides an adhesive structure between a case and a heat sink.
第２図は従来の半導体装置の内特にトランジスタモジュ
ールの内部構造を示す断面図で、図において、１は銅等
の熱伝導性の良好な材料で形成された放熱板、２はセラ
ミック材で形成された絶縁基板、３は絶縁基板２に接合
され銅等の電気伝導性、熱伝導性の良好な材料で形成さ
れた導体、４は導体３に接着された半導体チップ、５は
半導体チップ４と外部回路（図示せず）を接続するため
の電極端子である。又、図示されていないが半導体チン
ブ４の他の電極は絶縁基板２上に設けられた他の導体パ
ターンとアルミ線等で配線されており、電極端子５とほ
ぼ同様な方法で外部に導出されている。Figure 2 is a cross-sectional view showing the internal structure of a conventional semiconductor device, particularly a transistor module. In the figure, 1 is a heat sink made of a material with good thermal conductivity such as copper, and 2 is a heat sink made of a ceramic material. 3 is a conductor bonded to the insulating substrate 2 and made of a material with good electrical conductivity and thermal conductivity such as copper; 4 is a semiconductor chip bonded to the conductor 3; 5 is a semiconductor chip 4; This is an electrode terminal for connecting an external circuit (not shown). Although not shown, other electrodes of the semiconductor chip 4 are wired with other conductor patterns provided on the insulating substrate 2 using aluminum wires, etc., and are led out to the outside in substantially the same manner as the electrode terminals 5. ing.
なお、放熱板１、絶縁基板２、半導体チップ４、電極端
子５はそれぞれ半田等のろう材によって接着されている
。６は絶縁基板２、半導体チップ４、電極端子５の一部
、及びアルミ配線を覆うように形成されたケースで、放
熱板１と接着剤７により接着されている。そして、この
ケース６内には半導体チップ４やアルミ配線などを外部
雰囲気から保護するために、シリコンゲルやエポキシ樹
脂などの充填材（１）、（２）を充填・硬化させている
。Note that the heat sink 1, the insulating substrate 2, the semiconductor chip 4, and the electrode terminals 5 are each bonded with a brazing material such as solder. A case 6 is formed to cover the insulating substrate 2, the semiconductor chip 4, a part of the electrode terminal 5, and the aluminum wiring, and is bonded to the heat sink 1 with an adhesive 7. In order to protect the semiconductor chip 4, aluminum wiring, etc. from the external atmosphere, fillers (1) and (2) such as silicone gel and epoxy resin are filled and hardened in the case 6.
以上のように、トランジスタモジュールのケース６と放
熱板１の接着は一般に、第３図、第４図に示す様に接着
剤７によって接着されているが、接着強度を強化するた
め第５図に示すように、ケース６の一部を熱又は超音波
圧接によりかしめられている。As mentioned above, the case 6 of the transistor module and the heat sink 1 are generally bonded together using the adhesive 7 as shown in FIGS. 3 and 4, but in order to strengthen the adhesive strength, As shown, a portion of the case 6 is caulked by heat or ultrasonic pressure welding.
従来のトランジスタモジュールは以上のように構成され
ていたので、ケースと放熱板を強固に接着するためには
第５図に示すように、ケースの一部を熱又は超音波圧接
によりかしめられており、このかしめ作業の時間と作業
者の教育、かしめ部の品質均一性などに問題点があった
。Conventional transistor modules were constructed as described above, so in order to firmly bond the case and the heat sink, a part of the case was caulked by heat or ultrasonic pressure welding, as shown in Figure 5. However, there were problems with the time required for this caulking work, the training of workers, and the uniformity of the quality of the caulked parts.
この発明は上記のような問題点を解消するためになされ
たもので、かしめ作業を無くしケースと放熱板を強固に
接着することが可能な半導体装置を得ることを目的とす
る。The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a semiconductor device in which a case and a heat sink can be firmly bonded together without the need for caulking work.
この発明に係る半導体装置はケースの周囲部にケース固
定をするための爪と、放熱板の周囲部に爪をかけるため
の溝とを設けたものである。The semiconductor device according to the present invention is provided with claws for fixing the case around the periphery of the case, and grooves for hooking the claws around the periphery of the heat sink.
この発明におけるケース周囲部の爪と放熱板の周囲部の
溝は接着強化の為のケースの一部のカシメをする作業を
無くすことができるため、作業時間の短縮および品質向
上を図ることができる。In this invention, the claws on the periphery of the case and the grooves on the periphery of the heat sink can eliminate the work of caulking a part of the case to strengthen the adhesion, thereby reducing work time and improving quality. .
以下、この発明の一実施例を図について説明する。第１
図はこの発明の一実施例である半導体装置のケースと放
熱板の接着部の断面図で、図示以外の部分は前記従来の
ものと同一なので説明は省略する。An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure is a cross-sectional view of a bonded portion between a case and a heat sink of a semiconductor device according to an embodiment of the present invention, and since the parts other than those shown in the figure are the same as those of the conventional device, a description thereof will be omitted.
第１図において、１０はケース６の周囲に設けられた爪
、１１は放熱板１の周囲に設けられた溝で、爪１０が図
示の如く係止される。７は接着剤である。In FIG. 1, reference numeral 10 indicates a claw provided around the case 6, and reference numeral 11 indicates a groove provided around the heat sink 1, into which the claw 10 is engaged as shown. 7 is an adhesive.
次に動作について説明する。Next, the operation will be explained.
ケース６と放熱板１の結合の強化をケース６の周囲に設
けられた爪１０と、放熱板１の周囲に設けられた溝１１
とをはめ込むだけで可能となり、ケース６を放熱板１に
強固に接着したい場合、作業上何ら支障なく安定した接
着が可能となる。The connection between the case 6 and the heat sink 1 is strengthened by the claws 10 provided around the case 6 and the grooves 11 provided around the heat sink 1.
This can be done by simply fitting the case 6 to the heat sink 1, and when it is desired to firmly adhere the case 6 to the heat sink 1, stable adhesion is possible without any hindrance to the work.
以上のようにこの発明によれば、ケースの周囲に爪を設
けこの爪に放熱板の周囲に設けられた溝に係合するよう
にしたので、作業時間の短縮および品質向上が得られ信
頼性の高い半導体装置が得られる。As described above, according to the present invention, a claw is provided around the case so that the claw engages with a groove provided around the heat dissipation plate, thereby reducing work time, improving quality, and improving reliability. A semiconductor device with high performance can be obtained.
第１図はこの発明の一実施例を示すケースと放熱板との
接着部の部分断面図、第２図は従来のトランジスタモジ
ュールの断面正面図、第３図、第４図は従来のケースと
放熱板との接着部の部分断面図、第５図は従来のケース
と放熱板とを強固に接着させる場合の部分断面図である
。
図において、１は放熱板、６はケース、７は接着剤、１
０は爪、１１は溝を示す。
なお、図中、同一符号は同一、又は相当部分を示す。
第１図Fig. 1 is a partial cross-sectional view of the bonded portion between a case and a heat sink showing an embodiment of the present invention, Fig. 2 is a cross-sectional front view of a conventional transistor module, and Figs. 3 and 4 are a cross-sectional view of a conventional transistor module. FIG. 5 is a partial cross-sectional view of a bonding portion with a heat sink. FIG. 5 is a partial cross-sectional view of a case where a conventional case and a heat sink are firmly bonded. In the figure, 1 is a heat sink, 6 is a case, 7 is an adhesive, 1
0 indicates a claw, and 11 indicates a groove. In addition, in the figures, the same reference numerals indicate the same or equivalent parts. Figure 1
Claims (1)
絶縁基板と、この絶縁基板の他方の面に半田等のろう材
で接着させた放熱板と、前記半導体チップ、電極端子の
一部及び絶縁基板等を覆って放熱板上に接着させるケー
スとを備え、前記ケース内にエポキシ樹脂などの充填材
を充填硬化させてなる半導体装置において、前記ケース
の周囲部にケースの固定をする爪と、放熱板の周囲部に
前記爪がかかる溝を設けたことを特徴とする半導体装置
。A semiconductor chip, an insulating substrate with an electrode terminal bonded to one surface thereof, a heat sink bonded to the other surface of the insulating substrate with a brazing material such as solder, the semiconductor chip, a portion of the electrode terminal, and In a semiconductor device comprising a case that covers an insulating substrate and the like and is bonded onto a heat sink, the case is filled with a filler such as an epoxy resin and cured, and a nail for fixing the case is provided around the periphery of the case. A semiconductor device, characterized in that a groove into which the claw is engaged is provided in the periphery of the heat sink.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2434289A JPH02203555A (en) | 1989-02-01 | 1989-02-01 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2434289A JPH02203555A (en) | 1989-02-01 | 1989-02-01 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02203555A true JPH02203555A (en) | 1990-08-13 |
Family
ID=12135513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2434289A Pending JPH02203555A (en) | 1989-02-01 | 1989-02-01 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02203555A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5386144A (en) * | 1993-06-18 | 1995-01-31 | Lsi Logic Corporation | Snap on heat sink attachment |
| US5898571A (en) * | 1997-04-28 | 1999-04-27 | Lsi Logic Corporation | Apparatus and method for clip-on attachment of heat sinks to encapsulated semiconductor packages |
| US5977622A (en) * | 1997-04-25 | 1999-11-02 | Lsi Logic Corporation | Stiffener with slots for clip-on heat sink attachment |
| WO2016184130A1 (en) * | 2015-10-29 | 2016-11-24 | 中兴通讯股份有限公司 | Radiator of projector and projector |
-
1989
- 1989-02-01 JP JP2434289A patent/JPH02203555A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5386144A (en) * | 1993-06-18 | 1995-01-31 | Lsi Logic Corporation | Snap on heat sink attachment |
| US5977622A (en) * | 1997-04-25 | 1999-11-02 | Lsi Logic Corporation | Stiffener with slots for clip-on heat sink attachment |
| US5898571A (en) * | 1997-04-28 | 1999-04-27 | Lsi Logic Corporation | Apparatus and method for clip-on attachment of heat sinks to encapsulated semiconductor packages |
| WO2016184130A1 (en) * | 2015-10-29 | 2016-11-24 | 中兴通讯股份有限公司 | Radiator of projector and projector |
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