JP2003060132A - Substrate structure, semiconductor device and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem that effect of heat radiation is poor, since a heat radiation path from a semiconductor element to radiation fin contains a sealing resin. SOLUTION: A radiation fin attaching wiring 13 is so placed as to enclose surroundings of a die bonding pad 12 formed at a center part of a substrate 11, and connected to the die bonding pad 12; a radiation fin 18 has a leg part 17 of a shape, corresponding to the radiation fin attaching wiring 13; the leg part 17 is fixed to the radiation fin attaching wiring 13; and thereby heat is made to efficiently transmit from a semiconductor element 4, through the radiation fin attaching wiring 13 to the radiation fin 18.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device substrate structure, a semiconductor device, and a method for manufacturing the same.

[0002]

2. Description of the Related Art FIG. 5 is a plan view showing a conventional substrate structure.

A die bonding pad 2 for mounting a semiconductor element is formed in the center of a substrate 1, and a wire bonding pad 3 for connecting a wire is formed on the outside thereof.

FIG. 6 is a sectional view showing a conventional semiconductor device.
A semiconductor element is mounted on the substrate shown in FIG.

The semiconductor element 4 is die-bonded to the die bonding pad 2 of the substrate 1 to electrically connect the wiring of the semiconductor element 4 and the wiring of the substrate 1. Therefore, the electrode of the semiconductor element 4 and the wire bonding pad 3 are wired. Bonding is done by 5.

In order to protect the semiconductor element 4 and the wire 5,
The sealing resin 6 is formed on the substrate 1, and solder balls 7, for example, are connected to the lower surface of the substrate 1 as output terminals of the semiconductor device.

Further, in order to dissipate the heat generated from the semiconductor element 4, a radiation fin 8 is adhered on the sealing resin 6.

[0008]

However, in the conventional mounting structure, as shown in FIG. 7 which is a sectional view for explaining the problems of the prior art, the heat dissipation path from the semiconductor element 4 to the heat dissipation fin 8 is As shown by the arrow of the flow A, it is through the sealing resin 6.

Epoxy resin is generally used as the sealing resin 6. However, as shown in Table 1, the epoxy resin has a small thermal conductivity, and the heat generated from the semiconductor element 4 is not efficiently transmitted to the radiation fin 8. was there.

[0010]

[Table 1] Therefore, a good heat dissipation effect cannot be obtained as a semiconductor device.

[0011]

In order to solve the above problems, the present invention has a substrate structure provided with a radiation fin mounting wiring which is arranged so as to surround the periphery of a die bonding pad and is connected to the die bonding pad. It is a thing.

Further, the present invention is a semiconductor device, which is arranged so as to surround a semiconductor element and a die bonding pad, and has a shape corresponding to a substrate having a radiation fin mounting wiring connected to the die bonding pad and a radiation fin mounting wiring. The leg portions are formed on the bottom surface and the fins are fixed to the radiation fin mounting wiring.

[0013]

1 is a plan view showing a substrate structure according to an embodiment of the present invention. It should be noted that the same components as those of the related art are denoted by the same reference numerals in all the drawings.

A die bonding pad 12 for mounting a semiconductor element is formed in the center of a substrate 11, and a wire bonding pad 3 for connecting a wire is formed on the outside of the die bonding pad 12 as in the conventional case.

Further, a radiation fin mounting wiring 13 is formed outside the die bonding pad 12 and the wire bonding pad 3 so as to surround them.

The radiation fin mounting wiring 13 is connected to the four corners 14 of the die bonding pad 12 by the bridge portion 15. The die bonding pad 12, the radiation fin mounting wiring 13, and the bridge portion 15 can be simultaneously formed by a conductor pattern.

FIG. 2 is a sectional view showing a semiconductor device according to an embodiment of the present invention, in which a semiconductor element is mounted on the substrate shown in FIG.

The semiconductor element 4 is die-bonded to the die bonding pad 12 of the substrate 11 and the wiring of the semiconductor element 4 and the wiring of the substrate 11 are electrically connected in the same manner as in the conventional case. Three
And are bonded by the wire 5.

Next, solder balls 7, for example, are connected to the lower surface of the substrate 11 as output terminals of the semiconductor device.

Further, in order to dissipate the heat generated from the semiconductor element 4, a plurality of fin portions 16 are formed on the upper side, and a heat radiating fin 18 having a leg portion 17 formed on the bottom surface is disposed on the heat radiating fin mounting wiring 13 with the leg portion 17 positioned. It is also fixed with an adhesive containing a conductor.

FIG. 3 is a perspective view showing a heat radiation fin according to an embodiment of the present invention, and is a view seen from below so that the legs can be seen.

The leg portions 17 of the heat radiation fin 18 are formed like a plate of a bowl, and the heat radiation fin mounting wiring 1 shown in FIG.
It has a shape corresponding to the quadrangle 3 and adheres to the radiation fin mounting wiring 13 to seal and protect the semiconductor element 4.

FIG. 4 is a sectional view for explaining the effect of the present invention.

The path from the semiconductor element 4 to the radiation fin 18 is as indicated by the arrow of the heat flow B, the semiconductor element 4, the die bonding pad 12, the bridge portion 15 in FIG. 1, the radiation fin mounting wiring 13, and the leg portion 17. Composed through.

The die bonding pad 12, the bridge portion 15 and the radiation fin mounting wiring 13 are, for example, copper patterns and have a thermal conductivity of 398.0 W / m as shown in Table 1.
・ K is large, and the heat generated from the semiconductor element 4 is efficiently transmitted to the radiation fins 18.

Therefore, according to the embodiment, a good heat dissipation effect can be obtained in the semiconductor device as a whole.

Further, since the semiconductor element 4 is protected by mounting the heat radiation fins 18 having the leg portions 17, there is an advantage that the sealing resin becomes unnecessary.

Next, a method of manufacturing the semiconductor device of the present invention will be described with reference to FIGS.

First, the semiconductor element 4 is prepared, and the die bonding pad 12 formed at the center for mounting the semiconductor element 4, the wire bonding pad 3 formed outside the die bonding pad 12, and the die bonding pad 12 And the radiation fin mounting wiring 1 arranged so as to surround the wire bonding pad 3 and connected by the die bonding pad 12 and the bridge portion 15.
A substrate 11 having 3 is prepared.

Further, a heat radiation fin 18 having a leg portion 17 having a shape corresponding to the heat radiation fin mounting wiring 13 formed on the bottom surface is prepared.

The semiconductor element 4 is attached to the die bonding pad 1
2 is die-bonded, and the electrode of the semiconductor element 4 and the wire bonding pad 3 are wire-bonded with the wire 5 as in the conventional case.

Next, as an output terminal of the semiconductor device, for example, a solder ball 7 is connected as in the conventional case.

Then, the leg portions 17 of the radiation fins 18 are aligned with the radiation fin mounting wirings 13 and fixed by an adhesive containing a conductor to complete the process.

In this way, since the semiconductor element 4 is sealed and protected by the radiation fins 18 in the sealed space, the conventional sealing resin is unnecessary, and therefore the resin sealing step is omitted. Therefore, the manufacturing process can be shortened.

In the above embodiment, BGA (Ba
Although the semiconductor device having the ll grid array structure has been described above, the LGA (Lang Grid Array) and the QFP (Quad Flatpack Package) have been described.
It can also be applied to a semiconductor device having a package structure such as e).

[0036]

As described above, according to the present invention, by providing the radiation fin mounting wiring on the substrate and fixing the legs of the radiation fin to the radiation fin mounting wiring, a good heat radiation effect can be obtained. .

Further, the sealing resin which is necessary for protecting the semiconductor element can be eliminated.

[Brief description of drawings]

FIG. 1 is a plan view showing a substrate structure according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view showing a semiconductor device of an embodiment.

FIG. 3 is a perspective view showing a heat dissipation fin of the embodiment.

FIG. 4 is a sectional view for explaining the effect of the present invention.

FIG. 5 is a plan view showing a conventional substrate structure.

FIG. 6 is a sectional view showing a conventional semiconductor device.

FIG. 7 is a cross-sectional view illustrating a problem with a conventional technique.

[Explanation of symbols]

3 wire bonding pad 4 Semiconductor element 5 wires 7 Solder balls 11 board 12 Die bonding pad 13 Radiation fin mounting wiring 14 squares 15 Bridge section 16 fin section 17 legs 18 radiating fins

Claims (7)

[Claims] 1. A die bonding pad formed in the center of a substrate for mounting a semiconductor element, and a radiation fin mounting wiring arranged so as to surround the periphery of the die bonding pad and connected to the die bonding pad. A substrate structure comprising: 2. The substrate structure according to claim 1, wherein the radiation fin mounting wiring is connected to the four corners of the die bonding pad at a bridge portion. 3. The substrate structure according to claim 1, wherein the heat radiation fin mounting wiring and the die bonding pad are simultaneously formed by a conductor pattern. 4. A semiconductor element, a die bonding pad formed in a central portion of a substrate for mounting the semiconductor element, and a radiation fin attachment arranged around the die bonding pad and connected to the die bonding pad. A semiconductor device comprising: a substrate having wiring; and a heat dissipation fin in which a leg portion having a shape corresponding to the heat radiation fin mounting wiring is formed on a bottom surface, and the leg portion is fixed to the heat radiation fin mounting wiring. 5. The semiconductor device according to claim 4, wherein the radiation fin mounting wiring is connected to the four corners of the die bonding pad by a bridge portion. 6. A step of preparing a semiconductor element, a die bonding pad formed in a central portion for mounting the semiconductor element, and a die bonding pad disposed so as to surround the die bonding pad and connected to the die bonding pad. A substrate having the heat radiation fin mounting wiring formed thereon, a step of preparing a heat radiation fin having a leg portion having a shape corresponding to the heat radiation fin mounting wiring formed on the bottom surface, and the semiconductor element being bonded to the die bonding pad by a die. A method of manufacturing a semiconductor device, comprising: a step of bonding, and a step of fixing a leg portion of the radiation fin to the radiation fin mounting wiring. 7. The method of manufacturing a semiconductor device according to claim 6, wherein the radiation fin mounting wiring and the die bonding pad are simultaneously formed by a conductor pattern.