JPH0219621B2 - - Google Patents

Info

Publication number
JPH0219621B2
JPH0219621B2 JP58233123A JP23312383A JPH0219621B2 JP H0219621 B2 JPH0219621 B2 JP H0219621B2 JP 58233123 A JP58233123 A JP 58233123A JP 23312383 A JP23312383 A JP 23312383A JP H0219621 B2 JPH0219621 B2 JP H0219621B2
Authority
JP
Japan
Prior art keywords
scribe line
electrode
layer
film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58233123A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60124820A (ja
Inventor
Takaaki Momose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP23312383A priority Critical patent/JPS60124820A/ja
Publication of JPS60124820A publication Critical patent/JPS60124820A/ja
Publication of JPH0219621B2 publication Critical patent/JPH0219621B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP23312383A 1983-12-09 1983-12-09 半導体装置の製造方法 Granted JPS60124820A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23312383A JPS60124820A (ja) 1983-12-09 1983-12-09 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23312383A JPS60124820A (ja) 1983-12-09 1983-12-09 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60124820A JPS60124820A (ja) 1985-07-03
JPH0219621B2 true JPH0219621B2 (cs) 1990-05-02

Family

ID=16950114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23312383A Granted JPS60124820A (ja) 1983-12-09 1983-12-09 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60124820A (cs)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57208169A (en) * 1981-06-17 1982-12-21 Toshiba Corp Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPS60124820A (ja) 1985-07-03

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