JPH02189953A - Semiconductor integrated circuit device - Google Patents

Abstract

PURPOSE:To form a semiconductor integrated circuit device without preventing the improvement of the degree of integration of a circuit by a through-hole by connecting a plurality of wiring layers having electrically equal nodes only by one through-hole. CONSTITUTION:When wirings having electrically equal nodes are realized by wiring layers L1-L4, the wiring layer L1 is formed onto an insulating layer I1, and an insulating layer I2 is shaped onto the wiring layer L1. The wiring layers L1-L3 and insulating layers I1-I4 are shaped by repeating the process, a through-hole T1 penetrated from the insulating layer I4 to the wiring layer L1 is bored, and the wiring layer L4 is formed onto the insulating layer I4. The wiring layers L1-L4 are given the electrically equal nodes through the through-hole T1 at that time. Accordingly, a device can be formed without preventing the improvement of the degree of integration of a circuit by the through-hole.

Description

[Detailed description of the invention] [Industrial application field] The present invention relates to a semiconductor integrated circuit device.

[Conventional technology]

FIG. 4 is a sectional view of a conventional semiconductor integrated circuit device having a multilayer wiring structure, in which L1 to L4 are wiring layers, 1 to I4 are insulating layers, and T1 to T3 are through holes.

Wiring layer L1. L2. L3. When L4 realizes wiring of the same electrical node, the following procedure is used.

Step (2): A wiring layer L1 is formed on the insulating layer (2) 1.

Step (2): forming an insulating layer I2 on the wiring layer L1;

Step (2): Drill a through hole T1 in the insulating layer (2).

Step (3): Forming the wiring layer L2 on the insulating layer I2 At this time, the wiring layers L1 and L2 become electrically at the same node through the through hole T1.

By sequentially repeating the above steps ① to ②, the wiring layers L1 to L4, the insulation m11 to 4, and the through hole T1
~ Form T3. At this time, the wiring layers L1 to L4 become electrically the same node through the through holes T1 to T3.

Here, a step is formed in the wiring layer L2 at the through hole T1 portion, and due to this, a step is also formed in the insulation layer 3 at the T1 portion.

Therefore, when forming the through hole n, it is formed while avoiding this step. The same applies to the through hole T3, and it is formed at a position that is a certain distance from the positions of the through hole T1 and the through hole T2.

[Problem to be solved by the invention]

Conventional semiconductor integrated circuit devices have been configured as described above, so when multiple wiring layers are electrically connected to the same node, it is necessary to shift the position of the through holes between each wiring layer, which causes problems in the circuit. There was a problem in that it hindered the improvement of the degree of integration.

This invention was made in order to solve the above-mentioned problems, and even when multiple wiring layers are electrically connected to rJ - nodes, it is possible to avoid impeding the improvement of circuit integration by using through holes. The purpose is to

[Means to solve the problem]

In the semiconductor integrated circuit device according to the present invention, a plurality of wiring layers at the same electrical node are electrically connected by a single through hole.

[Effect]

In the semiconductor integrated circuit device of the present invention, a plurality of wiring layers at the same electrical node are electrically connected by a single through hole, so that the semiconductor integrated circuit device can be formed without hindering the improvement of circuit integration due to through holes.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, L1 to L4 are wiring layers, 1 to 4 are insulating layers, and TI is a through hole.

Next, the operation will be explained. Wiring layers Ll, L2. When wiring L3 and L4 are electrically connected to the same node, the following procedure is used.

Step (D) A wiring layer L1 is formed on the insulating layer (1).

Step (2): An insulating layer (2) is formed on the wiring layer L1.

Repeat process ■, process ■, and process ■ to form wiring layers L1 to L.
3 and insulating layers 11 to 4 are formed.

Step (2): A through hole 1'1 penetrating from the insulating layer 14 to the wiring layer L1 is opened.

Step (2): forming a wiring layer L4 on the insulating layer I4; At this time, the wiring layers L1 to L4 become electrically the same node through the through hole TI.

In the above embodiment, the through hole T1 is cylindrical, but as shown in FIG. Therefore, a connection with low connection resistance can be realized.

In addition, in the conical through hole, the wiring Pi
If selective etching is performed in which only the insulating layer is etched without being etched, and the shape of the through hole is made stepwise as shown in FIG. 3, a connection with even lower resistance can be realized.

〔Effect of the invention〕

As described above, according to the present invention, when a plurality of wiring layers of a semiconductor integrated circuit device with a multilayer wiring structure are electrically connected to the same node, it is possible to realize the improvement of circuit integration by through holes without hindering the improvement of circuit integration. There is.

[Brief explanation of the drawing]

FIG. 1 is a sectional view of a semiconductor integrated circuit device which is an embodiment of the present invention, FIGS. 2 and 3 are sectional views of a semiconductor integrated circuit device which is another embodiment of the invention, and FIG. 4 is a conventional 1 shows a cross-sectional view of a semiconductor integrated circuit device. In the figure, L1 to L4 are wiring layers, ■1 to ■4 are insulating layers, and T1
~T3 indicates a through hole. In addition, the same symbols in the figures indicate the same or equivalent parts.

Claims (1)

[Claims] A semiconductor integrated circuit device having a plurality of wiring layers and a plurality of insulating layers that insulate the wiring layers from each other, the semiconductor integrated circuit device having a through hole passing through the plurality of wiring layers and the plurality of insulating layers. circuit device.