JPH02181422A - Semiconductor plasma deposition device - Google Patents

Abstract

PURPOSE:To make film thickness uniform by arranging a magnetic field generation source movably to a semiconductor and a target, and performing deposition in parts, for example, two times so as to do depositions wherein errosion areas are different, and burying the part wherein the film by the first deposition is thin at the second time. CONSTITUTION:A vertical rotary shaft 10 is provided in a vacuum deposition chamber, and on both sides of it a first magnetic field generation source 1 and a second magnetic field generation source 23 are coupled, and the generation sources 13 and 23 are respectively opposed to substrates 15 and 25 for film formation, which are arranged thereon, by rotation of the rotary shaft, and in the power source 13, two sets of electromagnets are built in, and two targets 14 are attached to the top of the electromagnets to generate the first errosions, respectively. While, in the generation source 23, a set of electromagnets are built in, and thereon a target 24 is attached to generate the second errosion 27. This way, the generation sources 13 and 24 are rotated under the substrates 15 and 25, whereby deposited films 18 and 28 are formed on the bottoms of the substrates 15 and 25, and finally these films are synthesized so as to make the thickness uniform.

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a semiconductor plasma deposition apparatus that performs vapor deposition on a semiconductor substrate using plasma.

(Prior Art) A conventional structure of a plasma deposition apparatus for performing plasma deposition on a semiconductor substrate will be explained with reference to a sectional view shown in FIG.

In FIG. 2, reference numeral 101 denotes a target fixed in position, and an electromagnet 102 is fixedly placed below the target, and an electromagnet power supply 103 is attached to this electromagnet 102 to supply current and generate a magnetic field 104.

Then, this magnetic field 104 causes the target] 01
-h, high-density plasma is maintained, and vapor deposition is performed on the semiconductor substrate lOO placed opposite the target layer hlol. The deposition is accomplished under the same magnetic field conditions from start to finish. Further, 105 generated in the target 101 is an erosion region, and the semiconductor substrate 105 is an erosion region.
is the vapor deposited film 110 formed on the opposite surface of the target 101.
It is shown.

(Problems to be Solved by the Invention) According to the conventional plasma deposition apparatus described above, the thickness of the deposited film 110 deposited on the semiconductor substrate becomes non-uniform. This is because the positions of the target 101 and the electromagnet 102 that generates the B& field 104 are both fixed, so that vapor deposition is performed in the erosion region 105 under a single condition. Due to non-uniformity in the thickness of the deposited film, there are problems such as large variations in the electrical characteristics of the semiconductor device formed or deterioration of electrical continuity.

Further, the non-uniformity of the thickness of the deposited film is more pronounced as the diameter of the semiconductor substrate becomes larger.

This invention was made in view of the above-mentioned conventional problems.
It is an object of the present invention to provide a structure of a vapor deposition apparatus that improves non-uniformity in film thickness in a plasma-deposited film on a semiconductor substrate.

[Structure of the invention]

(Means for Solving the Problems) A semiconductor plasma deposition apparatus according to the present invention maintains high-density plasma on a target using a magnetic field generated by an electromagnet and performs vapor deposition on a semiconductor substrate. , this targeter 1 is equipped with a plurality of different magnetic field generation sources and a mechanism that can arbitrarily select one of these magnetic field generation sources and face the target, and the magnetic field is applied to each vapor deposition for a predetermined amount multiple times. It is characterized by being able to change the conditions.

(Function) The plasma deposition apparatus of the present invention performs a predetermined amount of vapor deposition in multiple steps, and the magnetic field conditions can be changed for each vapor deposition, so that the deposited film can be formed with a uniform thickness.

(Example) An example of the present invention will be described below with reference to FIG.

As shown in FIG. 1a, a first electromagnet 11 is mounted in a vacuum deposition chamber facing a vertical rotation shaft 10. The electromagnet 21 in FIG. 2 and the magnet 21 for energizing them. 1 magnet power supply 12. There are a first magnetic field generation source 13 and a second magnetic field generation source 23, which are composed of a second electromagnetic power source 22. Also, the first and second electromagnets 11.2 above the first and second magnetic field generation sources 13.23
A first target 1 facing each of the targets 1 and 1 having a disk shape
4. A second target 24 is stereotaxically arranged. - Above the first and second targets 14.24, there is a first semiconductor substrate 15.24 facing each other. and a second semiconductor substrate 25 are arranged.

Further, the first electromagnet 11 in the first magnetic field generation source U is formed in a cylindrical shape and spaced apart from the center of the first target 14, and the second electromagnet 21 is formed in a cylindrical shape separated from the center of the first target 14.
It is formed in the center of 4.

Therefore, the single electromagnet power supply 12.22 is activated to generate the first magnetic field 16.2 generated by each electromagnet 11.21. second magnetic field 26
is formed, plasma deposition on the first semiconductor substrate 15 is performed in the first two lotions 17 area generated on the first target 14, and plasma deposition on the second semiconductor substrate 25 is performed on the second lotion 17 area generated on the first target 14. The second lotion 27 area generated on the target layer 1-24 is subjected to the process, and as shown in the figure, a vapor deposited film 18 is formed on the first semiconductor substrate 15.

Further, the second semiconductor substrate 25 has the first semiconductor substrate 15
A vapor deposited film 28 having a thickness distribution different from that of the vapor deposited film 18 is formed.

Next, by rotating the rotation axis lO by, for example, 180 degrees with a motor, the positions of the first semiconductor planting board 15 and the second semiconductor substrate 25 are exchanged, as shown in FIG.
Plasma deposition is performed here. Through this plasma deposition, a vapor-deposited film 38 is formed by laminating a vapor-n film 28 having a different film thickness distribution on the vapor-deposited film 18 of the first semiconductor substrate 15 . Further, on the second semiconductor substrate 25, a vapor deposited film 48 is formed by laminating the vapor deposited film 18 having a different film thickness distribution on the vapor deposited film 28.

As mentioned above, the thickness of the vapor-deposited films 38 and 48 obtained is made up of two layers having different thickness distributions, so that the thickness distribution is nearly uniform.

〔Effect of the invention〕

According to the plasma evaporation apparatus according to the present invention, the semiconductor substrate and the target are provided with a magnetic field generation source section that is movable, and the evaporation is performed in two steps, as an example, and the evaporation is performed in different erosion areas. The thin part of the vapor deposited film that occurs in the second lotion area of the first application is filled with the thick part of the same film thickness of the second application, and the thick part of the first application is filled with the thin part of the same film thickness of the second application. Uniformity can be achieved by applying it.

Furthermore, since the erosion area formed on the target is different between the first and second evaporation, the life of the target itself is improved.

In addition, although the case where vapor deposition is performed in two times was illustrated in the description including the examples, it goes without saying that it may be performed in multiple times.

[Brief explanation of the drawing]

1A and 1B are cross-sectional views for explaining an embodiment of a plasma deposition apparatus according to the present invention, and FIG. 2 is a cross-sectional view of a conventional plasma deposition apparatus. 11, 21 - Electromagnet 13, 23 - - - Magnetic field source 1/l
, 24----------1--Target 1-15,
25----------One semiconductor substrate 16, 26-
−−−−−−−−−−−Magnetic field agent Patent attorney Ogo
Norio 3f3. Eggs: J & (Membrane diagram (basket 2) () Chrysanthemum I)

Claims (1)

[Claims] A semiconductor plasma deposition apparatus that maintains high-density plasma on a target using a magnetic field generated by an electromagnet and performs vapor deposition on a semiconductor substrate uses a target, a plurality of different magnetic field generating sources for the target, and a plurality of magnetic field generating sources selected from among these magnetic field generating sources. What is claimed is: 1. A semiconductor plasma deposition apparatus, characterized in that it is equipped with a mechanism that can be arbitrarily selected and faced to a target, and that magnetic field conditions can be changed for each deposition in which a predetermined amount is deposited multiple times.