JPH0217989B2 - - Google Patents

Info

Publication number
JPH0217989B2
JPH0217989B2 JP55171899A JP17189980A JPH0217989B2 JP H0217989 B2 JPH0217989 B2 JP H0217989B2 JP 55171899 A JP55171899 A JP 55171899A JP 17189980 A JP17189980 A JP 17189980A JP H0217989 B2 JPH0217989 B2 JP H0217989B2
Authority
JP
Japan
Prior art keywords
region
conductivity type
low resistance
light
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55171899A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5795770A (en
Inventor
Junichi Nishizawa
Tadahiro Oomi
Ikuo Fujimura
Koji Shimanuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP55171899A priority Critical patent/JPS5795770A/ja
Publication of JPS5795770A publication Critical patent/JPS5795770A/ja
Publication of JPH0217989B2 publication Critical patent/JPH0217989B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/196—Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP55171899A 1980-12-05 1980-12-05 Semiconductor image pickup device Granted JPS5795770A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55171899A JPS5795770A (en) 1980-12-05 1980-12-05 Semiconductor image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55171899A JPS5795770A (en) 1980-12-05 1980-12-05 Semiconductor image pickup device

Publications (2)

Publication Number Publication Date
JPS5795770A JPS5795770A (en) 1982-06-14
JPH0217989B2 true JPH0217989B2 (cs) 1990-04-24

Family

ID=15931867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55171899A Granted JPS5795770A (en) 1980-12-05 1980-12-05 Semiconductor image pickup device

Country Status (1)

Country Link
JP (1) JPS5795770A (cs)

Also Published As

Publication number Publication date
JPS5795770A (en) 1982-06-14

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