JPH02147254A - Production of thermal head - Google Patents
Production of thermal headInfo
- Publication number
- JPH02147254A JPH02147254A JP63301177A JP30117788A JPH02147254A JP H02147254 A JPH02147254 A JP H02147254A JP 63301177 A JP63301177 A JP 63301177A JP 30117788 A JP30117788 A JP 30117788A JP H02147254 A JPH02147254 A JP H02147254A
- Authority
- JP
- Japan
- Prior art keywords
- resistor layer
- heating resistor
- printing
- thermal head
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000010438 heat treatment Methods 0.000 claims abstract description 51
- -1 fatty acid ester Chemical class 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 235000014113 dietary fatty acids Nutrition 0.000 claims abstract description 23
- 239000000194 fatty acid Substances 0.000 claims abstract description 23
- 229930195729 fatty acid Natural products 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000001312 dry etching Methods 0.000 claims abstract description 10
- 229910052796 boron Inorganic materials 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 7
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052737 gold Inorganic materials 0.000 claims abstract description 5
- 239000010931 gold Substances 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000000059 patterning Methods 0.000 claims abstract 3
- 150000002894 organic compounds Chemical class 0.000 claims description 12
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- 150000002739 metals Chemical class 0.000 claims description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 238000007639 printing Methods 0.000 abstract description 42
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 7
- 229910052707 ruthenium Inorganic materials 0.000 abstract description 7
- 238000005530 etching Methods 0.000 abstract description 6
- 239000001856 Ethyl cellulose Substances 0.000 abstract description 5
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 abstract description 5
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 abstract description 5
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229920001249 ethyl cellulose Polymers 0.000 abstract description 5
- 235000019325 ethyl cellulose Nutrition 0.000 abstract description 5
- 229940116411 terpineol Drugs 0.000 abstract description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 abstract description 4
- 238000005299 abrasion Methods 0.000 abstract description 4
- 150000001875 compounds Chemical class 0.000 abstract description 4
- 239000006185 dispersion Substances 0.000 abstract description 3
- 229910052752 metalloid Inorganic materials 0.000 abstract 1
- 150000002738 metalloids Chemical class 0.000 abstract 1
- 239000010408 film Substances 0.000 description 11
- 239000010409 thin film Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 235000019441 ethanol Nutrition 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000009966 trimming Methods 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- AFYPFACVUDMOHA-UHFFFAOYSA-N chlorotrifluoromethane Chemical compound FC(F)(F)Cl AFYPFACVUDMOHA-UHFFFAOYSA-N 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000007651 thermal printing Methods 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はファクシミリ、フルカラープリンタ、ワードプ
ロセッサなどの印字装置に用いるサーマルヘッドに関す
るものであり、特に印字品質の優れたサーマルヘッドに
関するものである。DETAILED DESCRIPTION OF THE INVENTION FIELD OF INDUSTRIAL APPLICATION The present invention relates to a thermal head used in printing devices such as facsimiles, full-color printers, and word processors, and particularly relates to a thermal head with excellent print quality.
従来の技術
熱転写、感熱印字方式プリンタなどの印字装置に用いら
れるサーマルヘッドは従来次の二つの種類のものがある
。第一のものは、第３図（ａ）、（ｂ）に示スヨうに、
グレーズアルミナ基板３１の上に蒸着モジ＜ハスバッタ
リングのような真空薄膜形成プロセスにより得たＴａ−
５１などよりなる発熱抵抗体層３３、旧、Ｏｒなどより
なる電極層３２ａ、３２ｂ１ＳＩＣなどよりなる耐摩耗
層３４をホトリソエ、、チング法をもちいてパターン形
成したもので、いわゆる薄膜型サーマルヘッドと呼ばれ
るものである。第二のものは、第４図（ａ）、（ｂ）に
示すように、グレーズ絶縁基板４！の上に、電極層４２
ａ＋４２ｂｔ 発熱抵抗体層４３、耐摩耗層４４をそ
れぞれペーストの印刷焼成により形成するもので、いわ
ゆる厚膜型サーマルヘッドと呼ばれるものである。2. Description of the Related Art There are two conventional types of thermal heads used in printing devices such as thermal transfer and thermal printing printers. The first one is as shown in Figures 3(a) and (b).
Ta-- obtained by a vacuum thin film forming process such as evaporation modulation and hash battering on the glazed alumina substrate 31.
A heating resistor layer 33 made of 51, etc., an electrode layer 32a made of old, Or, etc., and a wear-resistant layer 34 made of 32b1 SIC are patterned using photolithography and ching methods, and is called a thin-film thermal head. It is something. The second one is a glazed insulating substrate 4!, as shown in FIGS. 4(a) and 4(b). on top of the electrode layer 42
a+42bt The heating resistor layer 43 and the wear-resistant layer 44 are each formed by printing and baking pastes, and this is a so-called thick-film thermal head.
発明が解決しようとする課題
上に述べた二つの種類のサーマルヘッドはそれぞれ長所
と短所を有する。すなわち、薄膜型サーマルヘッドは発
熱抵抗体層の形状（面積、厚さなど）が各ドツト間で均
一であり、その熱容量が均一であることから印字の時の
紙への熱の伝達が均一に行われる。また各ドツト間の抵
抗値もあるレベルまでは均一なものが得られ、総合的に
見て印字品質の優れたサーマルヘッドである。また、発
熱抵抗体層の厚さが薄（１０００〜５０００ 、Ｊであ
ることから熱容量が小さく、パルス印加ＯＮ、ＯＦＦ時
の発熱抵抗体層温度の立ち上がり、立ち下がり時定数は
優れたものになり印字発熱効率も高い。しかしながら従
来の薄膜型サーマルヘッドではドツト間の抵抗値のばら
つきは±５％以下にすることは難しく、さらに優れた印
字品質を望むことは困難である。Problems to be Solved by the Invention The two types of thermal heads mentioned above each have advantages and disadvantages. In other words, in a thin-film thermal head, the shape (area, thickness, etc.) of the heating resistor layer is uniform between each dot, and the heat capacity is uniform, so heat is transferred uniformly to the paper during printing. It will be done. Furthermore, the resistance value between each dot is uniform up to a certain level, and overall the thermal head has excellent printing quality. In addition, since the heat generating resistor layer is thin (1000 to 5000 J), the heat capacity is small, and the rise and fall time constants of the heat generating resistor layer temperature when pulse application is ON and OFF are excellent. Printing heat generation efficiency is also high. However, with conventional thin-film thermal heads, it is difficult to reduce the variation in resistance value between dots to less than ±5%, and it is difficult to expect even better printing quality.
また薄膜プロセスのため、設備コスト、バ・ソチ生産な
ど生産性、低コスト化の点から解決するべき問題点が多
い。Furthermore, since it is a thin film process, there are many problems that need to be resolved in terms of productivity and cost reduction, such as equipment costs and Basochi production.
一方、厚膜型サーマルヘッドは印刷焼成法を用いること
から設備コストが低いこと、連続生産が容易なことなど
利点が多いが、発熱抵抗体層が酸化ルテニウム粉末など
の金属酸化物粉末とガラスフリットとの混合物から成る
ペーストを印刷焼成して形成したものであることから発
熱抵抗体層中の金属酸化物層の均一分散が得られ難く、
各ドツト間の抵抗値ばらつきを少なくすることが困難で
ある。厚膜型サーマルヘッドでは過負荷トリミング法に
よってこの抵抗値ばらつきを±１％以下にすることが可
能である。しかしながら一つのドツトの中のミクロな電
流パスに注目するとトリミングの不均一性などが要改善
点として残されている。On the other hand, thick film thermal heads have many advantages such as low equipment costs and easy continuous production because they use a printing and firing method, but the heating resistor layer is made of metal oxide powder such as ruthenium oxide powder and glass frit. Since it is formed by printing and firing a paste consisting of a mixture of
It is difficult to reduce variations in resistance values between dots. In a thick-film thermal head, it is possible to reduce this variation in resistance value to ±1% or less by using an overload trimming method. However, when focusing on the microscopic current path within a single dot, non-uniformity of trimming remains as an issue that needs improvement.
これらの短所は、原模型サーマルヘッドの発熱抵抗体層
の大きな熱容量に起因するところ大であり、発熱印字の
時の時定数が太きい、印字熱効率が悪い、印字品質が悪
いなどの結果に至っている。These disadvantages are largely due to the large heat capacity of the heating resistor layer of the original model thermal head, resulting in a large time constant during heating printing, poor printing thermal efficiency, and poor printing quality. There is.
以上の問題点を克服するものとして、発明者らは先に金
属もしくは類金属を含む有機化合物の分解反応生成物よ
りなる厚さ１．０μｍ以下の発熱抵抗体層を用いたサー
マルヘッドを提供した（特願昭１１ｉ３−１８４３５６
号）。該サーマルヘッドは印字熱効率において大きく改
良されたが、印字品質は若干薄膜型サーマルヘッドより
劣るものであった。In order to overcome the above problems, the inventors have previously provided a thermal head using a heating resistor layer with a thickness of 1.0 μm or less made of a decomposition reaction product of an organic compound containing a metal or metal-like metal. (Patent application 11i3-184356
issue). Although the thermal head was greatly improved in printing thermal efficiency, the printing quality was slightly inferior to that of the thin film type thermal head.
本発明は印字時定数、熱効率、および印字品質の改善を
目的とするもので印刷焼成法によるサーマルヘッドの改
善に関するものである。The present invention aims to improve the printing time constant, thermal efficiency, and printing quality, and relates to the improvement of a thermal head using a print-baking method.
課題を解決するための手段
上記問題点を解決するために本発明のサーマルヘッドの
製造方法は、基板上に前記基板の特定領域を覆う発熱抵
抗体層と、前記発熱抵抗体層に通電するための電極層と
、前記発熱抵抗体層の全部および電極層の一部を覆う耐
摩耗層とを設け、前記発熱抵抗体層が金属もしくは類金
属を含む有機化合物の分解反応生成物よりなり、かつ成
ＩＶＸ後ドライエツチング法によりパターン化すること
を特徴とするものである。Means for Solving the Problems In order to solve the above problems, the method for manufacturing a thermal head of the present invention includes a heating resistor layer on a substrate that covers a specific area of the substrate, and a method for energizing the heating resistor layer. and a wear-resistant layer covering all of the heating resistor layer and a part of the electrode layer, the heating resistor layer being made of a decomposition reaction product of an organic compound containing a metal or a similar metal, and This method is characterized in that it is patterned by dry etching after IVX.
作用
本発明のサーマルヘッドの製造方法は、発熱抵抗体層を
金属もしくは類金属を含む有機化合物の分解反応生成物
により構成することにより、発熱抵抗体層の膜厚が薄く
なり、発熱抵抗体層の熱容量を小さくすることが可能と
なると共に、発熱抵抗体層層の各成分の均一分散が得易
くなるため、発熱印字の時の時定数、印字熱効率、印字
品質などを改善することができる。また、本発明のサー
マルヘッドの製造方法によると、発熱抵抗体層の膜厚が
薄くなるため、ドライエツチング法により発熱抵抗体層
のパターン化を行ない、隣接ドツトと完全に分離させる
ことが可能となり、従来のライン状の発熱抵抗体層を用
いた場合より印字品質を改善することができる。Function: In the method for manufacturing a thermal head of the present invention, the heating resistor layer is formed of a decomposition reaction product of an organic compound containing a metal or a metal-like metal, so that the thickness of the heating resistor layer becomes thinner. It becomes possible to reduce the heat capacity of the heat generating resistor layer, and it becomes easier to obtain uniform dispersion of each component of the heating resistor layer, so that the time constant, printing thermal efficiency, printing quality, etc. during heating printing can be improved. Furthermore, according to the method of manufacturing a thermal head of the present invention, since the thickness of the heating resistor layer is reduced, it is possible to pattern the heating resistor layer using a dry etching method and completely separate it from adjacent dots. , printing quality can be improved compared to the case of using a conventional line-shaped heating resistor layer.
実施例 以下に本発明の具体的な実施例を示す。Example Specific examples of the present invention are shown below.
実施例１
第１図（ａ）、（ｂ）に示す様に、厚さ０．８＋ａｍの
グレーズアルミナ基板１１の上に印刷焼成法によってラ
イン状の発熱抵抗体層（膜厚数千へ） ＋３を形成した
。Example 1 As shown in FIGS. 1(a) and 1(b), a line-shaped heating resistor layer (thickness of several thousand +3) was formed by printing and firing on a glazed alumina substrate 11 with a thickness of 0.8 +3 am. was formed.
印刷に用いた発熱抵抗体ペーストは、ルテニウムの脂肪
酸エステル（炭素数７、液体）、鉛の脂肪酸エステル、
硼素の脂肪酸エステル、シリコンの脂肪酸エステル、エ
チルセルロース及びテルピネオールよりなる混合組成ペ
ーストである。成膜後ホトレジストにより必要とする発
熱抵抗体層部をマスキングし、ケミカルドライエツチン
グ法により不要部をエツチングした。エツチングは真空
度；２〜２０Ｐａ、 放電用カニ １〜３ｋＶ１１
００〜４００ｍＡの条件下で行なった。導入ガスとして
は、アルゴン、四弗化炭素、四塩化炭素、−塩化三弗化
炭素、炭化水素、アルコールよりなる群から選ばれた少
なくとも１種類以上のガスを用いて行なった。特に、メ
チルアルコール、エチルアルコール、メタン、エタン、
プロパン、ブタン等のアルコールモジは炭化水素を併用
することにより、発熱抵抗体層のエツチング速度が飛躍
的に向上した。中でも、メチルアルコール、エチルアル
コールが効果が大きかった。The heating resistor paste used for printing was ruthenium fatty acid ester (7 carbon atoms, liquid), lead fatty acid ester,
This is a mixed composition paste consisting of boron fatty acid ester, silicon fatty acid ester, ethyl cellulose, and terpineol. After film formation, the necessary heating resistor layer portion was masked with photoresist, and unnecessary portions were etched using a chemical dry etching method. Etching vacuum level: 2~20Pa, discharge crab 1~3kV11
The test was carried out under conditions of 00 to 400 mA. As the introduced gas, at least one gas selected from the group consisting of argon, carbon tetrafluoride, carbon tetrachloride, carbon chloride trifluoride, hydrocarbons, and alcohols was used. In particular, methyl alcohol, ethyl alcohol, methane, ethane,
When alcohol modifiers such as propane and butane are used in combination with hydrocarbons, the etching speed of the heating resistor layer is dramatically improved. Among them, methyl alcohol and ethyl alcohol were the most effective.
これは、理由は定かでないが、放電により炭化水素が分
解して生成した水素ラジカルもしくはメチルラジカル等
が酸化状態にある発熱抵抗体層組成を還元状態とするこ
とによりエツチング速度を高めているものと思われる。The reason for this is not clear, but it is thought that hydrogen radicals or methyl radicals, etc. generated by decomposition of hydrocarbons due to electric discharge, increase the etching rate by reducing the oxidized composition of the heating resistor layer. Seem.
以上の成膜法により発熱抵抗体層を形成後、金を含む有
機化合物のペーストの印刷焼成及びホトリソエツチング
によって電極層＋２ａ，＋２ｂを形成し、この王にガラ
スペーストの印刷焼成により耐摩耗層（膜厚的５μｍ）
＋４を形成した。After forming the heating resistor layer by the above film formation method, electrode layers +2a and +2b are formed by printing and baking a paste of an organic compound containing gold and photolithography, and then a wear-resistant layer is formed by printing and baking a glass paste on top of the electrode layers +2a and +2b. (Film thickness: 5 μm)
+4 was formed.
実施例２
第２図（ａ）、（ｂ）に示す様に、厚さ０．８ｍｍのグ
レーズアルミナ基板２１の上に金を含むを様化合物のペ
ーストの印刷焼成及びホトリソエツチングによって電極
層２２ａ．２２ｂを形成し、さらに、その上に印刷焼成
によってライン状の発熱抵抗体層（膜厚数千へ）２３を
形成した。印刷に用いた発熱抵抗体ペーストは、ルテニ
ウムの脂肪酸エステル（炭素数７、液体）、鉛の脂肪酸
エステル、硼素の脂肪酸エステル、シリコンの脂肪酸エ
ステル、エチルセルロース及びテルピネオールよりなる
混合組成ペーストである。成膜後ホトレジストにより必
要とする発熱抵抗体層部をマスキングし、実施例１と同
様にしてケミカルドライエツチング法により不要部をエ
ツチングした。Example 2 As shown in FIGS. 2(a) and 2(b), an electrode layer 22a was formed on a glazed alumina substrate 21 with a thickness of 0.8 mm by printing and baking a paste of a similar compound containing gold and photolithographically etching it. ．． 22b was formed, and then a line-shaped heating resistor layer 23 (with a thickness of several thousand) was formed thereon by printing and firing. The heating resistor paste used for printing was a mixed composition paste consisting of ruthenium fatty acid ester (7 carbon atoms, liquid), lead fatty acid ester, boron fatty acid ester, silicon fatty acid ester, ethyl cellulose, and terpineol. After film formation, the necessary heating resistor layer portion was masked with photoresist, and unnecessary portions were etched by chemical dry etching in the same manner as in Example 1.
以上の成膜法により発熱抵抗体層を形成後、この上にガ
ラスペーストの印刷焼成により耐摩耗屑（膜厚的５μｍ
）２４を形成した。After forming a heating resistor layer using the above film forming method, abrasion-resistant debris (5 μm in film thickness) is removed by printing and baking glass paste on top of this layer.
)24 was formed.
比較例１
代表的な従来の原模型サーマルヘッドであり、発熱抵抗
体ペーストとして酸化ルテニウム粉末と硼珪酸ガラスフ
リットとエチルセルロースとターピネオールとの混合組
成ペーストを用い、他の構成および材料は実施例１と同
様にしてサーマルヘッドを作成した。Comparative Example 1 A typical conventional original model thermal head, in which a mixed composition paste of ruthenium oxide powder, borosilicate glass frit, ethyl cellulose, and terpineol was used as the heating resistor paste, and other configurations and materials were the same as in Example 1. A thermal head was created in the same manner.
比較例２
実施例１に用いたのと同じブレースアルミナ基板上に、
旧よりなる電極層、Ｔａ−Ｓ１合金よりなる発熱抵抗体
層、ＳｉＣよりなる耐摩耗層とを各々薄青法により形成
してサーマルヘッドを形成した。Comparative Example 2 On the same braced alumina substrate used in Example 1,
A thermal head was formed by forming an electrode layer made of a conventional electrode layer, a heat generating resistor layer made of a Ta-S1 alloy, and an abrasion resistant layer made of SiC by a light blue method.
比較例３
千鳥型電極構造を有する従来の原模型サーマルヘッドに
おいて、ルテニウムの金属化合物を出発原料として、印
刷焼成によってライン状の発熱抵抗体層を形成し、他の
構成および材料は実施例１と同様にしてサーマルヘッド
を作成した。Comparative Example 3 In a conventional original model thermal head having a staggered electrode structure, a line-shaped heating resistor layer was formed by printing and firing using a ruthenium metal compound as a starting material, and the other configurations and materials were the same as in Example 1. A thermal head was created in the same manner.
第１表に本発明の実施例によるサーマルヘッドの特性を
示す。表中の抵抗値ばらつきは各ドツト抵抗値の標準偏
差を平均抵抗値で割った値を示す。Table 1 shows the characteristics of the thermal head according to the embodiment of the present invention. The resistance value variation in the table shows the value obtained by dividing the standard deviation of each dot resistance value by the average resistance value.
印字濃度ばらつきは、サーマルヘッド形成後の各ドツト
のそれぞれの発熱部の抵抗値を通電過負荷トリミング法
（発熱抵抗体の自己発生ジュール熱により抵抗値を調整
する方法）を用いてトリミングすることにより、発熱部
の抵抗値を±１％以内にそろえた後、０．４Ｗ／ｄｏｔ
、１／４ｄｕｔｙ、ｌａｍｓ／ｃｙｃｌｅの駆動条件で
感熱紙に印字し、各ドツトの発色点の濃度をマイクロ濃
度計で測定した結果を示す。また、時定数は赤外線顕微
鏡により求めた発熱部の温度プロファイルから算出した
。Variations in printing density can be resolved by trimming the resistance value of each heating part of each dot after the thermal head is formed using the current overload trimming method (a method in which the resistance value is adjusted using the self-generated Joule heat of the heating resistor). , after adjusting the resistance value of the heat generating part within ±1%, 0.4W/dot
, 1/4 duty, and lams/cycle on thermal paper, and the density of each dot's coloring point was measured using a microdensitometer. Further, the time constant was calculated from the temperature profile of the heat generating part determined using an infrared microscope.
第１表
第１表に示すごとく、実施例１〜２に示したサーマルヘ
ッドは、従来の様なガラスフリットをバインダとして用
いたサーマルヘッド（比較例１）より非常に薄い発熱抵
抗体層（膜厚蓋μｍ以下）を得ることができるため、発
熱抵抗体層の熱容量を小さくすることができ、かつ発熱
抵抗体層中の分解反応生成物の均一分散が得られ易いた
め、抵抗値ばらつき、印字濃度ばらつきが小さく、時定
数も小さくなる。また、発熱抵抗体層をエツチングによ
り隣接ドツトと分離独立を図ることにより、構成材料は
同一でライン状の発熱抵抗体層を用いたサーマルヘッド
（比較例３）に較べ、特に、印字品質に関してより優れ
ていることが分かった。Table 1 As shown in Table 1, the thermal heads shown in Examples 1 and 2 have a much thinner heating resistor layer (film) than the conventional thermal head using glass frit as a binder (Comparative Example 1). The heat capacity of the heat generating resistor layer can be reduced, and uniform dispersion of the decomposition reaction products in the heat generating resistor layer can be easily achieved, reducing resistance value variations and printing. The concentration variation is small and the time constant is also small. In addition, by etching the heating resistor layer to separate it from the adjacent dots, the printing quality is improved compared to the thermal head (comparative example 3), which uses the same constituent material but uses a line-shaped heating resistor layer. I found it to be excellent.
なお、実施例１〜２において、発熱抵抗体ペーストに用
いた鉛の脂肪酸エステル、硼素の脂肪酸エステル、シリ
コンの脂肪酸エステルは、これらのうちの１種類もしく
は２種類を用いても同様な結果が得られた。In Examples 1 and 2, the same results could be obtained even if one or two of the lead fatty acid ester, boron fatty acid ester, and silicon fatty acid ester used in the heating resistor paste were used. It was done.
さらに、耐摩耗層として、アルミナ、酸化ジルコニウム
、炭化珪素、窒化珪素、炭化チタンよりなる群から選ば
れた少なくとも１つ以上のセラミック粉末を分散した低
軟化点ガラスの焼成膜を用いたサーマルヘッドも本実施
例のサーマルヘッドが持つ特徴を損ねること無く耐摩耗
性を向上させることができた。Furthermore, as a wear-resistant layer, there is also a thermal head using a fired film of low softening point glass in which at least one ceramic powder selected from the group consisting of alumina, zirconium oxide, silicon carbide, silicon nitride, and titanium carbide is dispersed. It was possible to improve the wear resistance without impairing the characteristics of the thermal head of this example.
また、金属をもしくは類金属を含む有機化合物として、
ルテニウムの脂肪酸エステルの代わりにルテニウムの多
環式有機化合物、ルテニウムの液体状脂肪酸エステル（
炭素数７）、ルテニウムの固体状脂肪酸エステル（炭素
数２０）の中から少なくとも１種類を用い、鉛、硼素も
しくはシリコンの脂肪酸エステル、鉛のアルコラート、
硼素のアルコラート、シリコンのアルコラートの中から
少なくとも１種類を用いて、エチルセルロース及びテル
ピネオールと混合して作成した混合組成ペーストを印刷
焼成して発熱抵抗体層として用いてもよい。In addition, as an organic compound containing a metal or similar metal,
Instead of ruthenium fatty acid ester, ruthenium polycyclic organic compound, ruthenium liquid fatty acid ester (
Using at least one type of solid fatty acid ester of ruthenium (7 carbon atoms), lead, boron or silicon fatty acid ester, lead alcoholate,
A mixed composition paste prepared by mixing at least one of boron alcoholate and silicon alcoholate with ethyl cellulose and terpineol may be printed and fired and used as the heating resistor layer.
さらに、金属もしくは類金属を含む有機化合物として、
白金族金属、金、銀、ニッケル、クロム、シリコン、ゲ
ルマニウム、タンタル、アルミニウム、ジルコニウム、
チタン、硼素、ビスマス、バナジウム、鉛よりなる群か
ら選ばれた少なくとも１種類以上の金属もしくは類金属
を含む有機化合物であれば前記実施例と同様の効果が得
られた。Furthermore, as an organic compound containing a metal or similar metal,
Platinum group metals, gold, silver, nickel, chromium, silicon, germanium, tantalum, aluminum, zirconium,
The same effects as in the above embodiments were obtained if the organic compound contained at least one metal or similar metal selected from the group consisting of titanium, boron, bismuth, vanadium, and lead.
なお、上記の金属もしくは類金属を含む化合物は、単独
もしくは２種類以上の混合物のいずれでも使用し得る。Note that the above-mentioned compounds containing metals or similar metals can be used either singly or in a mixture of two or more types.
さらに、金属もしくは類金属を含む有機化合物としては
炭素数が２０までの脂肪酸塩、脂肪酸のエステル、アル
コラート、メルカプチド、環状カルボン酸塩などの多環
式有機金属化合物、その他のレジネート、ロジネートの
単体もしくは２種類以上の混合物であれば良いことが分
かった。Furthermore, as organic compounds containing metals or similar metals, polycyclic organometallic compounds such as fatty acid salts, fatty acid esters, alcoholates, mercaptides, and cyclic carboxylates having up to 20 carbon atoms, other resinates, single or rhosinates, etc. It has been found that a mixture of two or more types is sufficient.
発明の効果
以上記載のように、本発明によれば従来の様なガラスフ
リットをバインダに用いないためにその厚さの非常に薄
い発熱抵抗体層を得ることができる。このため発熱抵抗
体層の熱容量が小さくなり薄膜プロセスによるものと同
等になるため印字の時のＯＮ、ＯＦＦ時定数、印字品質
いずれの点でも優れた特性を有するサーマルヘッドが低
コストで連続的に生産できる。Effects of the Invention As described above, according to the present invention, a heating resistor layer having a very thin thickness can be obtained since glass frit as in the conventional case is not used as a binder. As a result, the heat capacity of the heating resistor layer becomes smaller, making it equivalent to that produced by a thin film process, so a thermal head with excellent characteristics in terms of both ON and OFF time constants and printing quality can be produced continuously at low cost. Can be produced.
第１図（ａ）、（ｂ）及び第２図（ａ）、（ｂ）は本発
明の実施例におけるサーマルヘッドの代表的な構成を示
す平面図および断面図、第３図（ａ）、（ｂ）及び第４
図（ａ）、（ｂ）は従来例におけるサーマルヘッドの代
表的な構成を示す平面図及び断面図である。
ＩＩ、２１．３１，４１・・・グレーズアルミナ基板、
１２ａ、＋２ｂ、２２ａ、２２ｂ、３２ａ、３２ｂ、４
２ａ、４２ｂｅ 参ａ電極層、１３．２３，３３，４３
・・・発熱抵抗体層、＋４．２４，３４．４４拳・・耐
摩耗層。1(a), (b) and 2(a), (b) are a plan view and a sectional view showing a typical configuration of a thermal head in an embodiment of the present invention, and FIG. 3(a), (b) and fourth
Figures (a) and (b) are a plan view and a sectional view showing a typical configuration of a conventional thermal head. II, 21.31,41...glazed alumina substrate,
12a, +2b, 22a, 22b, 32a, 32b, 4
2a, 42be Reference a electrode layer, 13.23, 33, 43
...Heating resistor layer, +4.24, 34.44 fist...Abrasion resistant layer.
Claims (5)
と、前記発熱抵抗体層に通電するための電極層と、前記
発熱抵抗体層の全部および電極層の一部を覆う耐摩耗層
とを設け、前記発熱抵抗体層が金属もしくは類金属を含
む有機化合物の分解反応生成物よりなり、かつ成膜後ド
ライエッチング法によりパターン化することを特徴とす
るサーマルヘッドの製造方法。(1) A heating resistor layer on a substrate that covers a specific area of the substrate, an electrode layer for supplying electricity to the heating resistor layer, and a wear-resistant layer that covers all of the heating resistor layer and a part of the electrode layer. 1. A method for manufacturing a thermal head, wherein the heating resistor layer is made of a decomposition reaction product of an organic compound containing a metal or metal-like metal, and is patterned by dry etching after film formation.
法が、低級アルコールを用いたケミカルドライエッチン
グ法である請求項１に記載のサーマルヘッドの製造方法
。(2) The method for manufacturing a thermal head according to claim 1, wherein the dry etching method for patterning the heating resistor layer is a chemical dry etching method using lower alcohol.
２に記載のサーマルヘッドの製造方法。(3) The method for manufacturing a thermal head according to claim 2, wherein the lower alcohol is methyl alcohol.
属、金、銀、ニッケル、クロム、シリコン、ゲルマニウ
ム、タンタル、アルミニウム、ジルコニウム、チタン、
硼素、ビスマス、バナジウム、鉛よりなる群から選ばれ
た少なくとも一種類以上の金属もしくは類金属を含む有
機化合物である請求項１から３のいずれか一項に記載の
サーマルヘッドの製造方法。(4) Organic compounds containing metals or similar metals include platinum group metals, gold, silver, nickel, chromium, silicon, germanium, tantalum, aluminum, zirconium, titanium,
4. The method for manufacturing a thermal head according to claim 1, wherein the thermal head is an organic compound containing at least one metal or similar metal selected from the group consisting of boron, bismuth, vanadium, and lead.
２０までの脂肪酸塩、脂肪酸のエステル、アルコラート
、メルカプチド、多環式有機金属化合物、その他のレジ
ネート、ロジネートの単体もしくはいずれかの混合物で
ある請求項１から４のいずれか一項に記載のサーマルヘ
ッドの製造方法。(5) The organic compound containing a metal or similar metal is a single substance or a mixture of fatty acid salts, fatty acid esters, alcoholates, mercaptides, polycyclic organometallic compounds, other resinates, and rhosinates having up to 20 carbon atoms. A method for manufacturing a thermal head according to any one of claims 1 to 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63301177A JPH02147254A (en) | 1988-11-29 | 1988-11-29 | Production of thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63301177A JPH02147254A (en) | 1988-11-29 | 1988-11-29 | Production of thermal head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02147254A true JPH02147254A (en) | 1990-06-06 |
Family
ID=17893714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63301177A Pending JPH02147254A (en) | 1988-11-29 | 1988-11-29 | Production of thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02147254A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0478546A (en) * | 1990-07-20 | 1992-03-12 | Rohm Co Ltd | Thermal printing head |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56111229A (en) * | 1980-01-25 | 1981-09-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Dry etching method of insulation film |
| JPS6063174A (en) * | 1983-09-17 | 1985-04-11 | Alps Electric Co Ltd | Manufacture of thermal head |
| JPS62119057A (en) * | 1985-11-20 | 1987-05-30 | Oki Electric Ind Co Ltd | Thermal head and its manufacture |
| JPS62292453A (en) * | 1986-06-11 | 1987-12-19 | Matsushita Electric Ind Co Ltd | Thermal head |
-
1988
- 1988-11-29 JP JP63301177A patent/JPH02147254A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56111229A (en) * | 1980-01-25 | 1981-09-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Dry etching method of insulation film |
| JPS6063174A (en) * | 1983-09-17 | 1985-04-11 | Alps Electric Co Ltd | Manufacture of thermal head |
| JPS62119057A (en) * | 1985-11-20 | 1987-05-30 | Oki Electric Ind Co Ltd | Thermal head and its manufacture |
| JPS62292453A (en) * | 1986-06-11 | 1987-12-19 | Matsushita Electric Ind Co Ltd | Thermal head |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0478546A (en) * | 1990-07-20 | 1992-03-12 | Rohm Co Ltd | Thermal printing head |
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