JP2615633B2 - Manufacturing method of thermal head - Google Patents
Manufacturing method of thermal headInfo
- Publication number
- JP2615633B2 JP2615633B2 JP62175688A JP17568887A JP2615633B2 JP 2615633 B2 JP2615633 B2 JP 2615633B2 JP 62175688 A JP62175688 A JP 62175688A JP 17568887 A JP17568887 A JP 17568887A JP 2615633 B2 JP2615633 B2 JP 2615633B2
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- thermal head
- compound solution
- organometallic compound
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
Landscapes
- Electronic Switches (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は厚膜型サーマルヘッドの製造方法に係り，特
に該サーマルヘッドに用いられる発熱抵抗体の製造方法
の改良に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a thick film type thermal head, and more particularly to an improvement in a method for manufacturing a heating resistor used in the thermal head.
〔従来の技術〕 従来，ファクシミリやサーマル式プリンタ等の電子装
置に用いられる厚膜型サーマルヘッドの発熱抵抗体は、
厚膜抵抗ペーストを基板上に塗布・焼成して形成する方
法が一般的である。[Prior art] Conventionally, a heating resistor of a thick film type thermal head used for an electronic device such as a facsimile or a thermal printer is composed of:
A method of applying and firing a thick film resistor paste on a substrate is generally used.
厚膜抵抗ペーストとしてはルテニウムを主成分とする
酸化物をガラスフリットと混合したペースト材料を用
い，これをグレーズドアルミナセラミック基板などの絶
縁基板上にスクリーン印刷して塗布し、焼成して抵抗体
を形成する。この抵抗ペーストはエッチング出来ないた
め，電極を交互にクシ型に配置し，これを横切るような
連続した帯状抵抗体を用いていた。As the thick film resistor paste, a paste material in which an oxide mainly composed of ruthenium is mixed with glass frit is used, screen-printed and applied on an insulating substrate such as a glazed alumina ceramic substrate, and fired to form a resistor. Form. Since this resistance paste cannot be etched, electrodes are alternately arranged in a comb shape, and a continuous strip-shaped resistor crossing the electrodes is used.
その１例を第２図に示す。第２図において,21は蓄熱
層を有する絶縁基板,22は接続部22−１を有する共通電
極,23は個別電極,26は帯状抵抗体を示す。One example is shown in FIG. In FIG. 2, reference numeral 21 denotes an insulating substrate having a heat storage layer, 22 denotes a common electrode having a connection part 22-1, 23 denotes an individual electrode, and 26 denotes a strip-shaped resistor.
図において共通電極22の接続部22−１と個別電極23は
交互にクシ型配置され、これらを横切る形状で帯状抵抗
体26が形成されている。In the figure, the connection portions 22-1 of the common electrode 22 and the individual electrodes 23 are alternately arranged in a comb shape, and a strip-shaped resistor 26 is formed in a shape crossing these.
共通電極22に一定電圧を印加し，印刷情報に従って選
択的に個別電極23′を接地させ，通電により抵抗体26の
一部26′を加熱する。これを１ドットとしその発熱によ
って対置した感熱記録紙に発色記録させたり，あるいは
インクリボンを介して普通紙に転写記録させるものであ
る。A constant voltage is applied to the common electrode 22, the individual electrode 23 'is selectively grounded according to the printing information, and a portion 26' of the resistor 26 is heated by energization. This is regarded as one dot, and color formation is recorded on the heat-sensitive recording paper which is opposed by heat generation, or is transferred and recorded on plain paper via an ink ribbon.
また共通電極と個別電極を対置させた導電パターン毎
に厚膜抵抗体から成る発熱素子を印刷法により形成した
構造のものもあるが、個々の発熱素子を各々独立して印
刷形成するため，各発熱素子の間を一定距離以上離す必
要があり，素子の高密度化が果せなかった。There is also a structure in which a heating element composed of a thick film resistor is formed by a printing method for each conductive pattern in which a common electrode and an individual electrode are opposed to each other. However, since each heating element is formed independently by printing, It is necessary to keep a certain distance or more between the heating elements, and the density of the elements cannot be increased.
そのため予め厚膜抵抗体を一体で印刷してから導電パ
ターン毎にスリットを形成する方法も提案されている
（例えば特開昭61−78666号公報参照）。この例を第３
図に示すと，グレーズドセラミック基板31上に共通電極
32と個別電極33の電極パターンを形成し，帯状抵抗体を
一体に形成する。各電極パターン毎にスリットを形成し
て発熱抵抗体を電極毎に分離するものである。Therefore, a method has been proposed in which a thick film resistor is integrally printed in advance and then a slit is formed for each conductive pattern (see, for example, JP-A-61-78666). This example is the third
In the figure, the common electrode is placed on the glazed ceramic substrate 31.
The electrode pattern of 32 and the individual electrode 33 is formed, and the strip-shaped resistor is integrally formed. A slit is formed for each electrode pattern to separate the heating resistor for each electrode.
ところが第２図に例示した帯状抵抗体26を用いたサー
マルヘッドでは隣接するドット間の熱的分離が悪いとい
う問題点がある。即ち各ドット間の抵抗体は連続してお
り、熱的分離は専ら共通電極22よりの放熱に頼っている
ので，放熱が十分でないと隣接ドット部分まで発熱して
ドットの形状が整わないのである。However, the thermal head using the strip-shaped resistor 26 illustrated in FIG. 2 has a problem that thermal separation between adjacent dots is poor. That is, since the resistors between the dots are continuous and the thermal separation solely depends on the heat radiation from the common electrode 22, if the heat radiation is not sufficient, the heat is generated up to the adjacent dot portion and the shape of the dots is not adjusted. .
また抵抗体は印刷法で形成するためその形状特にエッ
ジの形状にばらつきがあり，さらに膜厚も不均一になる
ため，各ドット毎の抵抗値のばらつきが大きくなり，そ
の結果記録された印字品質が悪くなるという問題点があ
る。Also, since the resistor is formed by the printing method, its shape, especially the shape of the edge, varies, and the film thickness becomes non-uniform, so that the resistance value of each dot varies greatly, and as a result, the printing quality recorded Is worse.
さらに共通電極と個別電極を対置させて抵抗体をドッ
ト毎に分離させるものは，予め厚膜抵抗体を一体に形成
後各ドット毎にレーザカット等でスリットを形成して分
離するものであるので，工程・設備が余分にかゝるこ
と，スリット形成工程で抵抗体にマイクロクラックが入
り抵抗体が剥離し易いという問題点がある。Further, in the case where the common electrode and the individual electrode are opposed to each other to separate the resistors for each dot, a thick film resistor is formed in advance and then separated by forming a slit for each dot by laser cutting or the like. In addition, there is a problem that extra steps and facilities are required, and that the resistors are easily cracked due to microcracks in the slit forming step.
従って本発明の目的は前記問題点を解決するため，厚
膜方式で発熱抵抗体をドット毎に分離した印字品質のよ
いサーマルヘッドの製造方法を提供するものである。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a method of manufacturing a thermal head of good print quality in which a heating resistor is separated for each dot by a thick film method in order to solve the above-mentioned problems.
前記目的を達成するため，本発明では、ルテニウム
（Ru）有機金属化合物溶液と、他の金属（Ｍ）の有機金
属化合物溶液とから構成され、ルテニウム（Ru）と他の
金属（Ｍ）との原子数比M/Ruが0.5〜2.5である有機金属
化合物溶液を基板に塗布し、乾燥・焼成して複数の電極
間を接続する抵抗体層を形成し、その後前記抵抗体層を
分離して個々の電極間を接続する抵抗体エレメントを形
成する。In order to achieve the above object, the present invention comprises a ruthenium (Ru) organometallic compound solution and an organometallic compound solution of another metal (M), and comprises a ruthenium (Ru) and another metal (M). An organometallic compound solution having an atomic ratio M / Ru of 0.5 to 2.5 is applied to a substrate, dried and fired to form a resistor layer connecting a plurality of electrodes, and then separating the resistor layer. A resistor element connecting the individual electrodes is formed.
抵抗体材料としてルテニウム（Ru）と他の金属（Ｍ）
との原子数比M/Ruが0.5〜2.5である有機金属化合物溶液
を用いることにより、膜質が均質で極めて薄い表面に凹
凸のない表面性の良好な、しかも基板との密着性がよい
抵抗体膜を形成することが出来る。さらに従来の厚膜方
式を用いた印刷・焼成により抵抗体膜を形成後，エッチ
ング液を用いたエッチングによって各ドット毎に分離す
ることが出来，印字品質のよいサーマルヘッドを容易な
工程で製造することができる。Ruthenium (Ru) and other metals (M) as resistor material
By using an organometallic compound solution with an atomic ratio M / Ru of 0.5 to 2.5, the film quality is uniform, the surface is very thin, the surface has no irregularities, and the adhesion to the substrate is good. A film can be formed. Furthermore, after forming a resistor film by printing and baking using a conventional thick film method, each dot can be separated by etching using an etchant, and a thermal head with good print quality can be manufactured in an easy process. be able to.
本発明の一実施例を第１図によって説明する。 One embodiment of the present invention will be described with reference to FIG.
第１図は本発明のサーマルヘッドの製造工程を示すも
のであって,1は蓄熱層を有する絶縁基板,2は共通電極,3
は個別電極,4はルテニウム（Ru）と他の金属（Ｍ）との
原子数比M/Ruを0.5〜2.5の有機金属化合物により形成し
た薄膜抵抗体膜,5はマスクパターン,6は抵抗体エレメン
トをそれぞれ示す。FIG. 1 shows a manufacturing process of a thermal head of the present invention, wherein 1 is an insulating substrate having a heat storage layer, 2 is a common electrode, 3
Is an individual electrode, 4 is a thin film resistor film formed by an organometallic compound having an atomic ratio M / Ru of ruthenium (Ru) and another metal (M) of 0.5 to 2.5, 5 is a mask pattern, 6 is a resistor Each element is shown.
まず蓄熱層を有する例えばアルミナセラミック基板１
上に，金電極パターンを形成する。この電極パターンは
図の如くクシの歯状の接続部２−１を有する共通電極２
と個別電極３から成り，接続部２ー１と個別電極３は互
に対向している（第１図（ａ）参照）。First, for example, an alumina ceramic substrate 1 having a heat storage layer
A gold electrode pattern is formed thereon. This electrode pattern has a common electrode 2 having a comb-like connecting portion 2-1 as shown in the figure.
The connection part 2-1 and the individual electrode 3 are opposed to each other (see FIG. 1 (a)).
次にこの電極パターンの対向する共通電極２の接続部
２−１と個別電極３を覆うように帯状にRu,ビスマス（B
i），シリコン（Si）を含む有機金属化合物溶液を帯状
にスクリーン印刷し，乾燥する。ここで有機金属化合物
溶液としては，例えばエンゲルハード社のメタルレジネ
ート（商品名）の下記の番号のものを使用した。Next, Ru, bismuth (B
i) Screen printing of an organometallic compound solution containing silicon (Si) in a belt shape and drying. Here, as the organometallic compound solution, for example, the following number of metal resinate (trade name) manufactured by Engelhard Co. was used.
Ru……Ａ−1124 Bi……＃8365 Si……＃28−FC 上記溶液を焼成後の原子数比がRu:Bi:Si＝1:0.1〜0.
7:0.3〜1.2の割合になるように混合し溶剤で粘度を調節
して印刷・乾燥する。次に700°〜900℃のピーク温度で
焼成し薄膜抵抗体膜４を形成する。Ru: A-1124 Bi: # 8365 Si: # 28-FC The ratio of the number of atoms after baking the above solution is Ru: Bi: Si = 1: 0.1-0.
7: Mix to give a ratio of 0.3 to 1.2, adjust the viscosity with a solvent, print and dry. Next, the thin film resistor film 4 is formed by firing at a peak temperature of 700 ° to 900 ° C.
形成された抵抗体膜４の膜厚は0.1〜0.5μｍである
（第１図（ｂ）参照）。The thickness of the formed resistor film 4 is 0.1 to 0.5 μm (see FIG. 1B).
この後感光性レジストを塗布してマスク露光・現像し
て発熱抵抗体の１ドット毎の形状のマスクパターン５を
形成する（第１図（ｃ）参照）。Thereafter, a photosensitive resist is applied, and the mask is exposed and developed to form a mask pattern 5 having a shape for each dot of the heating resistor (see FIG. 1 (c)).
このマスクパターン５を形成した基板１をエッチング
液としてHF:HNO3：H2O＝1:2:7〜17（容積比）を用い、
ディップ法によりウェットエッチングすることにより抵
抗体エレメント６を形成する（第１図（ｄ）参照）。HF: HNO 3 : H 2 O = 1: 2: 7 to 17 (volume ratio) is used as an etching solution with the substrate 1 on which the mask pattern 5 is formed,
The resistive element 6 is formed by wet etching by a dipping method (see FIG. 1 (d)).
次にレジストで形成したマスクパターン５を剥離した
後厚膜ガラスペーストを用いて耐磨耗層を形成する。Next, after removing the mask pattern 5 formed of a resist, a wear-resistant layer is formed using a thick glass paste.
この基板上に駆動用ICを実装してサーマルヘッドを完
成する。The driving IC is mounted on this substrate to complete the thermal head.
なお前記実施例では有機金属化合物としてRu,Bi,Siを
用いたものについて説明したが本発明はこれに限られ
ず,Ruを含み,Si,Biの他バリウム（Ba），鉛（Pb）から
選ばれた少なくとも一種の金属（Ｍ）から成り,Ruと他
の金属（Ｍ）との原子数比がRu:M＝1:0.5〜2.5である有
機金属化合物溶液を用いることができる。In the above embodiment, the case where Ru, Bi, and Si are used as the organometallic compound has been described. However, the present invention is not limited to this, and includes Ru, and other than Si and Bi, selected from barium (Ba) and lead (Pb). An organometallic compound solution composed of at least one kind of metal (M) and having an atomic ratio of Ru to another metal (M) of Ru: M = 1: 0.5 to 2.5 can be used.
また有機金属化合物溶液はエンゲルハード社のメタル
レジネートに限られず,Ruや他の金属の錯体を有機溶剤
で溶かしたものを用いることも出来る。Further, the organic metal compound solution is not limited to the metal resinate manufactured by Engelhard Co., but a solution in which a complex of Ru or another metal is dissolved in an organic solvent can also be used.
さらに前記実施例では有機金属化合物溶液の塗布法と
してスクリーン印刷を用いた例について説明したが，本
発明はこれに限られず，厚膜形成用の他の塗布法，例え
ばスピンコート法，ロールコート法あるいはディップコ
ート法により基板上に塗布して焼成後エッチングして所
望の形状の抵抗体を形成してもよい。Further, in the above-described embodiment, an example in which screen printing is used as a coating method of an organometallic compound solution has been described. However, the present invention is not limited to this. Alternatively, a resistor having a desired shape may be formed by coating on a substrate by dip coating, baking and etching.
また，前記実施例では抵抗体をエッチングする方法と
してディップ法について説明したが，本発明はシャワー
法等の他のウェットエッチングを用いることが出来る。
そしてエッチング液としてはHF単独,HF−HNO3,HF−NH4F
等のフッ素系・フッ硝酸系等の水溶液はいずれも適用可
能である。In the above embodiment, the dipping method was described as a method for etching the resistor. However, the present invention can use another wet etching method such as a shower method.
HF alone, HF-HNO 3 , HF-NH 4 F
Any of aqueous solutions such as fluorine-based and hydrofluoric-nitric-acid-based can be applied.
また，前記実施例では先に電極をパターニングした後
に抵抗体層を形成しているが，先に抵抗体層を形成，パ
ターニングした後電極を形成，パターニングしてもよ
い。Further, in the above embodiment, the resistor layer is formed after the electrode is first patterned, but the electrode may be formed and patterned after the resistor layer is formed and patterned first.
本発明の製造方法により形成したサーマルヘッドの発
熱抵抗体はRu有機金属化合物溶液と、他の金属の有機金
属化合物溶液とから構成され、しかもRuに対する他の金
属の原子数比を0.5〜2.5である有機金属化合物溶液を基
板に塗布し、乾燥・焼成したので、膜の性質が均質であ
り、極めて薄く形成することができ、しかも抵抗体と基
板との密着性も良好な、抵抗値も高すぎることのないも
のを提供することができる。従来の方法で形成した厚膜
抵抗体は第４図（ａ）に示す如くその断面が山型であ
り，例えば長径Ｄ≒200μｍのものでは高さ（Ｈ）15μ
ｍ程度の山型抵抗体となり，対置した記録紙等印字パタ
ーンは長径100〜200μｍ程度の画像となるが，本発明に
よれば第４図（ｂ）に示す如くその断面は約0.5μｍの
高さ（Ｈ′）の平型となり記録紙との紙あたりが良く印
字画像が抵抗体の形状通りでシャープなものを得ること
が出来る。従って熱応答性にすぐれており，低消費エネ
ルギー化できる。The heat generating resistor of the thermal head formed by the manufacturing method of the present invention is composed of a Ru organometallic compound solution and an organometallic compound solution of another metal, and has an atomic ratio of other metal to Ru of 0.5 to 2.5. A certain organometallic compound solution was applied to the substrate, dried and fired, so that the properties of the film were uniform and could be formed extremely thin, and the adhesion between the resistor and the substrate was good, and the resistance was high. It can provide something that is not too much. A thick film resistor formed by a conventional method has a mountain-shaped cross section as shown in FIG. 4 (a). For example, when the long diameter D is about 200 μm, the height (H) is 15 μm.
m, and the printed pattern of the recording paper or the like opposed to the image has an image with a major axis of about 100 to 200 μm. According to the present invention, the cross-section is about 0.5 μm as shown in FIG. 4 (b). (H '), and the printed image has a good contact with the recording paper, and a sharp printed image can be obtained in the shape of the resistor. Therefore, it has excellent thermal responsiveness and can reduce energy consumption.
また隣接ドット間が分離されているため，熱的にも分
離され，ベタ黒印字時と孤立ドット印字時の濃度差がな
くドットの再現性にすぐれた高画質のサーマルヘッドを
高価な設備を用いずに生産性よく製造することができ
る。In addition, since adjacent dots are separated, they are thermally separated, so there is no difference in density between solid black printing and isolated dot printing, and a high-quality thermal head with excellent dot reproducibility using expensive equipment. And can be manufactured with high productivity.
第１図は本発明の一実施例の製造工程図， 第２図は従来例の説明図， 第３図は他の従来例の説明図， 第４図は抵抗体ドットの断面比較図である。 １…絶縁基板,2…共通電極 ３…個別電極,4…抵抗体層 ５…マスクパターン,6…抵抗体エレメント 1 is a manufacturing process diagram of one embodiment of the present invention, FIG. 2 is an explanatory diagram of a conventional example, FIG. 3 is an explanatory diagram of another conventional example, and FIG. 4 is a cross-sectional comparison diagram of a resistor dot. . DESCRIPTION OF SYMBOLS 1 ... Insulating board, 2 ... Common electrode 3 ... Individual electrode, 4 ... Resistor layer 5 ... Mask pattern, 6 ... Resistor element
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭58−3201（ＪＰ，Ａ) 特開 昭50−30094（ＪＰ，Ａ) 特開 昭53−9543（ＪＰ，Ａ) 特開 昭62−46501（ＪＰ，Ａ) 特開 昭62−292453（ＪＰ，Ａ) 特開 昭60−63174（ＪＰ，Ａ) 特開 昭53−16640（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-58-3201 (JP, A) JP-A-50-30094 (JP, A) JP-A-53-9543 (JP, A) JP-A-62 46501 (JP, A) JP-A-62-292453 (JP, A) JP-A-60-63174 (JP, A) JP-A-53-16640 (JP, A)
Claims (1)
他の金属（Ｍ）の有機金属化合物溶液とから構成され、
ルテニウム（Ru）と他の金属（Ｍ）との原子数比M/Ruが
0.5〜2.5である有機金属化合物溶液を基板に塗布し、乾
燥・焼成して複数の電極間を接続する抵抗体層を形成
し、その後前記抵抗体層を分離して個々の電極間を接続
する抵抗体エレメントを形成することを特徴とするサー
マルヘッドの製造方法。1. A ruthenium (Ru) organometallic compound solution,
An organic metal compound solution of another metal (M),
The atomic ratio M / Ru between ruthenium (Ru) and another metal (M) is
An organometallic compound solution of 0.5 to 2.5 is applied to a substrate, dried and fired to form a resistor layer connecting a plurality of electrodes, and then separating the resistor layer and connecting individual electrodes. A method for manufacturing a thermal head, comprising forming a resistor element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62175688A JP2615633B2 (en) | 1987-07-14 | 1987-07-14 | Manufacturing method of thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62175688A JP2615633B2 (en) | 1987-07-14 | 1987-07-14 | Manufacturing method of thermal head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6418652A JPS6418652A (en) | 1989-01-23 |
| JP2615633B2 true JP2615633B2 (en) | 1997-06-04 |
Family
ID=16000500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62175688A Expired - Fee Related JP2615633B2 (en) | 1987-07-14 | 1987-07-14 | Manufacturing method of thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2615633B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2605875B2 (en) * | 1989-07-10 | 1997-04-30 | 富士ゼロックス株式会社 | Resistor film and method of forming the same |
| JP2667734B2 (en) * | 1990-07-20 | 1997-10-27 | ローム株式会社 | Manufacturing method of thermal print head |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2233654A1 (en) * | 1972-07-08 | 1974-01-24 | Degussa | THERMAL DECOMPOSABLE MATERIAL FOR THE PRODUCTION OF ELECTRICAL RESISTORS |
| JPS539543A (en) * | 1976-07-15 | 1978-01-28 | Toshiba Corp | Thick film material for thermal head and thermal head |
| JPS583201A (en) * | 1981-06-30 | 1983-01-10 | アルプス電気株式会社 | Resistance paste, thick film integrated circuit produced with same paste, thermal head and method of producing same |
-
1987
- 1987-07-14 JP JP62175688A patent/JP2615633B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6418652A (en) | 1989-01-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |