JPS56111229A - Dry etching method of insulation film - Google Patents

Dry etching method of insulation film

Info

Publication number
JPS56111229A
JPS56111229A JP806480A JP806480A JPS56111229A JP S56111229 A JPS56111229 A JP S56111229A JP 806480 A JP806480 A JP 806480A JP 806480 A JP806480 A JP 806480A JP S56111229 A JPS56111229 A JP S56111229A
Authority
JP
Japan
Prior art keywords
etching
central
dry etching
butyl acetate
insulation film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP806480A
Other languages
Japanese (ja)
Other versions
JPH0247101B2 (en
Inventor
Hiroji Harada
Masahiro Yoneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP806480A priority Critical patent/JPH0247101B2/en
Publication of JPS56111229A publication Critical patent/JPS56111229A/en
Publication of JPH0247101B2 publication Critical patent/JPH0247101B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To shorten time required for etching and to have uniform etching performance for both the central and peripheral parts, by mixing alcohol or ester or mixture thereof with the main constituent gas. CONSTITUTION:When a plasma etching on a Si3N4 film is performed with CH4 gas mixed preliminarily with butyl acetate vapor, the etching speed is not only increased but also maintained uniformly on both the central and peripheral parts. Butyl acetate can be replaced by either isopropyl alcohol or ethyl alcohol. A similar result is found in the case of reactive ion etching on the SiO2 and Si3N4 films.
JP806480A 1980-01-25 1980-01-25 ZETSUENMAKUNODORAIETSUCHINGUHOHO Expired - Lifetime JPH0247101B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP806480A JPH0247101B2 (en) 1980-01-25 1980-01-25 ZETSUENMAKUNODORAIETSUCHINGUHOHO

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP806480A JPH0247101B2 (en) 1980-01-25 1980-01-25 ZETSUENMAKUNODORAIETSUCHINGUHOHO

Publications (2)

Publication Number Publication Date
JPS56111229A true JPS56111229A (en) 1981-09-02
JPH0247101B2 JPH0247101B2 (en) 1990-10-18

Family

ID=11682909

Family Applications (1)

Application Number Title Priority Date Filing Date
JP806480A Expired - Lifetime JPH0247101B2 (en) 1980-01-25 1980-01-25 ZETSUENMAKUNODORAIETSUCHINGUHOHO

Country Status (1)

Country Link
JP (1) JPH0247101B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61232618A (en) * 1985-04-09 1986-10-16 Nec Corp Formation of pattern by reactive etching
JPH02147254A (en) * 1988-11-29 1990-06-06 Matsushita Electric Ind Co Ltd Production of thermal head
US5756402A (en) * 1992-12-28 1998-05-26 Kabushiki Kaisha Toshiba Method of etching silicon nitride film

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61232618A (en) * 1985-04-09 1986-10-16 Nec Corp Formation of pattern by reactive etching
JPH02147254A (en) * 1988-11-29 1990-06-06 Matsushita Electric Ind Co Ltd Production of thermal head
US5756402A (en) * 1992-12-28 1998-05-26 Kabushiki Kaisha Toshiba Method of etching silicon nitride film

Also Published As

Publication number Publication date
JPH0247101B2 (en) 1990-10-18

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