JPH0535074B2 - - Google Patents
Info
- Publication number
- JPH0535074B2 JPH0535074B2 JP61082480A JP8248086A JPH0535074B2 JP H0535074 B2 JPH0535074 B2 JP H0535074B2 JP 61082480 A JP61082480 A JP 61082480A JP 8248086 A JP8248086 A JP 8248086A JP H0535074 B2 JPH0535074 B2 JP H0535074B2
- Authority
- JP
- Japan
- Prior art keywords
- recording
- electrode
- silicide
- chromium
- recording head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 claims description 18
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229910052804 chromium Inorganic materials 0.000 claims description 11
- 239000011651 chromium Substances 0.000 claims description 11
- 229910021332 silicide Inorganic materials 0.000 claims description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052715 tantalum Inorganic materials 0.000 claims description 10
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 239000002241 glass-ceramic Substances 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 5
- 229910010293 ceramic material Inorganic materials 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 claims description 4
- 229910021357 chromium silicide Inorganic materials 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 229910021344 molybdenum silicide Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 4
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- VNTLIPZTSJSULJ-UHFFFAOYSA-N chromium molybdenum Chemical compound [Cr].[Mo] VNTLIPZTSJSULJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000010445 mica Substances 0.000 claims description 2
- 229910052618 mica group Inorganic materials 0.000 claims description 2
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 2
- AUTWRGZQAIMMQA-UHFFFAOYSA-N [Hf].[Nb] Chemical compound [Hf].[Nb] AUTWRGZQAIMMQA-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 43
- 238000000034 method Methods 0.000 description 17
- 239000000758 substrate Substances 0.000 description 15
- 238000007639 printing Methods 0.000 description 11
- 238000012546 transfer Methods 0.000 description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 9
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 239000011733 molybdenum Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000007772 electrode material Substances 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000005388 borosilicate glass Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910001120 nichrome Inorganic materials 0.000 description 3
- 229910052628 phlogopite Inorganic materials 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- ZPZCREMGFMRIRR-UHFFFAOYSA-N molybdenum titanium Chemical compound [Ti].[Mo] ZPZCREMGFMRIRR-UHFFFAOYSA-N 0.000 description 2
- -1 nichrome Chemical class 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
- B41J2/33505—Constructional details
- B41J2/3351—Electrode layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
- B41J2/33505—Constructional details
- B41J2/33515—Heater layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
- B41J2/3355—Structure of thermal heads characterised by materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
- B41J2/33555—Structure of thermal heads characterised by type
- B41J2/3357—Surface type resistors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
- B41J2/3359—Manufacturing processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/345—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads characterised by the arrangement of resistors or conductors
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electronic Switches (AREA)
Description
(技術分野)
本発明は記録装置に関するものであり、更に詳
しくは画像、文字等を高速且つ高品質に印写乃至
は印字する、通電発熱型の熱転写フイルムを用い
た通電型熱転写記録装置の記録ヘツドの材質に関
するものである。
(従来技術)
従来の通電型熱転写記録方式を用いた記録装置
の記録ヘツドに関しては、特開昭60−214973号公
報、特開昭60−214972号公報、特開昭60−214971
号公報、特開昭60−199669号公報等において、
種々なる構造のものが明らかにされている。とこ
ろで、通電型熱転写記録方式は、これらの特許公
開公報にも記載されている様に、インクフイルム
の抵抗層に記録ヘツドの記録電極を通じて電流を
流し、発生するジユール熱によつて、インクフイ
ルムのインク層を融解せしめて、所定の被転写紙
に転写させることにより、目的とする印字あるい
は印写を行なう方式である。従つて、通電熱転写
方式の記録ヘツドにおいては、常に記録ヘツドの
記録電極が抵抗層に通電できる様に接触する必要
があり、このため、上記の特許公開公報で提案さ
れている従来の記録ヘツドでは、電極と抵抗層と
の機械的摩耗を考え、耐摩耗性を有するタングス
テン、モリブデン等の金属が記録電極材料に用い
られている。
(問題点)
しかしながら、これらの導体材料を用いた記録
ヘツドで、長時間にわたり印写を繰り返すと、次
第に耐摩耗性が劣化したり、また高電位側の記録
電極が消耗したりして、抵抗層と記録電極との電
気的接触性の低下、接触圧力のムラが生じ、印写
画質が著しく低下するという新たな問題点が判明
した。
(解決手段)
本発明は、上記の記録ヘツドの問題点を解決し
たもので、抵抗層及び融解インク層を有するイン
クフイルムと、少なくとも基材及び複数の記録電
極を有する記録ヘツドとを含んで構成され、該記
録ヘツドの記録電極の少なくとも一部分を前記イ
ンクフイルムの抵抗層に接触させ、且つ前記記録
電極の中の所定の電極に電圧を印加することによ
り、該抵抗層に通電してジユール熱にて発熱せし
め、前記融解インク層を融解して被転写紙に転写
せしめ、所定の記録を得るようにした記録装置に
おいて、前記基材が易摩耗性の快削性セラミツク
ス材料からなり、且つ前記記録ヘツドの記録電極
の少なくとも前記抵抗層に通電する部分が、金属
硅化物を主成分とする導体材料、或いはクロム、
チタン、タンタル、ジルコニウム、ハフニウム、
ニオブのうちから選ばれた少なくとも1種を構成
成分とする導体材料(但し、硅化物を除く)から
なることを特徴とする記録装置にある。
すなわち、従来の記録電極における耐摩耗性の
経時変化や高電位側の記録電極の消耗の原因を検
討した結果、記録電極に用いた導体材料がインク
フイルムの抵抗層の発熱等によつて次第に酸化さ
れることを見い出し、更に陽極になる様に電圧が
印加されている高電位側の電極は、低電位側の記
録電極に比べて、より酸素と反応しやすくなるこ
とを見い出したのである。そして、このように、
記録電極が内部まで酸化され、耐摩耗性が劣化し
たり、電気抵抗が著しく増大することによつて、
電極部分で発熱し、剥離や摩耗あるいは昇華し
て、消耗することを見い出したことにより、本発
明は、空気中あるいは酸化性雰囲気において記録
を繰り返しても、電極内部までは酸化せず、著し
く電気抵抗が増大することのない導体材料を用い
て記録ヘツドを作製することにより、耐摩耗性の
経時劣化あるいは高電位側の記録電極の消耗とい
う問題点を解決したものである。
(構成の具体的説明)
ところで、本発明の記録装置において、導体材
料として金属硅化物を含む記録電極は、金属硅化
物に含有されるSiがSiO2となつて電極表面で薄
い酸化被膜を形成する為、電極内部の金属硅化物
が酸化されることがなく、またSiO2被膜は耐摩
耗性を有するので、好ましいものである。その中
でも、特に、モリブデンシリサイド、タングステ
ンシリサイド、クロムシリサイド、チタンシリサ
イド、タンタルシリサイドが好ましいものであ
る。
なお、上記したSiO2被膜は、記録電極のイン
クフイルムの抵抗層に通電する部分には、当該部
分が常にフイルムと摺動しているところから、実
質的に形成されることはないのである。また、仮
に、そのような通電部分にSiO2被膜が形成され
たとしても、インクフイルムに対する常なる摺接
によつて、記録電極の他の部分に比して極めて薄
い被膜に止まるところから、フイルムに対して電
極端面が摺動するときに、そのような極めて薄い
SiO2被膜は削られて、電極とフイルムとの通電
が良好に確保されるのである。
また、導体材料であるクロム、チタン、タンタ
ル、ジルコニウム、ハフニウム、ニオブ等を構成
成分として含む材料、例えばそれらの金属、又は
それら金属を含む合金、即ちニクロム、モリブデ
ン・チタン、モリブデン・クロム等の合金も、安
定で強固な酸化被膜を形成し、内部まで酸化され
にくいので、好ましい記録電極材料である。その
中でも、クロム、チタン、タンタルは好ましい材
料であるが、特にクロムの金属、合金の如き、ク
ロムを構成成分とする材料は、主成分の耐摩耗性
とともに、酸化被膜の耐摩耗性が非常に大きいの
で、好ましいものである。
もちろん、本発明の記録電極は、前述した記録
電極用材料を少なくとも一部に用いた2層以上の
複合膜の形態でもよい。例えば、クロム金属層と
モリブデン金属層の2層よりなる記録電極やチタ
ン金属層とモリブデン金属層の2層よりなる記録
電極、モリブデンを主成分とする厚膜ペーストを
加熱して形成したモリブデン層に、クロム金属層
を形成した記録電極なども、好ましい記録電極形
態である。
なお、本発明の記録装置に用いる記録ヘツドを
製造するにあたり、基材表面に、上記導体材料を
含んで構成される記録電極を形成する方法として
は、蒸着法、スパツタ法、メツキ法、CVD法、
イオンプレーテイング法等のいずれの膜形成技術
を用いてもよく、また記録電極用材料を主成分と
するペースト、又はスラリー等を作製し、印刷
法、浸漬法等で基材に印刷あるいは塗布し、加熱
して膜形成してもよい。また、パターン形成に関
しては、フオトエツチング法、リフトオフ法、マ
スク法、レーザ加工技術、スライシング加工技
術、スクリーン印刷技術等、回路のパターン形成
技術として通常に用いられている何れの方法を用
いても、またそれを組み合わせても用いても、何
等差支えない。
また、必要に応じて、本発明に従う記録電極上
に、電解メツキあるいは無電解メツキによつて、
導電性の向上や半田付性、実装するときのボンデ
イング性の改善の為に、Niメツキ、Ni−Bメツ
キ、Ni−W−Pメツキ、Auメツキ等を、電極全
面あるいは一部に膜付してもよい。更に、電極保
護等の為に、必要に応じて、電極全面あるいは一
部に、絶縁層を、スパツタ法、CVD法、イオン
プレーテイング法、蒸着法、陽極酸化法などで形
成しても、絶縁ペーストで印刷して形成しても、
絶縁層用コーテイング液を塗布して形成してもよ
い。この絶縁層の上に、更に前述した様に電極を
形成しても何等差支えない。
さらに、本発明の記録装置において、記録ヘツ
ドの基材としては、耐熱性を有し、記録を繰り返
しても記録電極材料とフイルム抵抗層とがよく接
触する様に、易摩耗性の材料、特に記録電極材料
より硬度が小さく、摩耗しやすい快削性セラミツ
クス材料(ガラスセラミツクスを含む)が用いら
れ、その中でも、雲母を含有するガラスセラミツ
ク基板が快削性に優れ、硬度が小さいので、好ま
しい材料である。
なお、所定の基材上に形成された、上記の如き
導体材料からなる各記録電極への基本的なスイツ
チ結線図の一例が、第1図に示されている。そこ
において、1は電源であり、そのプラス(高電
位)側にスイツチ2を介して高電位側の(記録)
電極4が接続され、またそのマイナス(低電位)
側にスイツチ3を介して低電位側の(記録)電極
5が接続される一方、それら高電位側の電極4と
低電位側の電極5とが交互に配列されている。そ
して、それぞれのスイツチ2,3の切換えによ
り、全ての隣合う電極4,5間のフイルム抵抗層
に選択的に電流が流されることによつて、よく知
られているように、インクフイルムの抵抗層の対
応する部分がジユール熱により発熱せしめられ
て、融解インク層が融解され、所望の画像、文字
等が被転写上に転写せしめられることとなるので
ある。本発明は、このような記録電極4,5にお
いて、特に、高電位側の電極4に対して有利に適
用されるものであるが、また低電位側の電極5に
適用されても、本発明の優れた効果を充分に享受
することが出来る。例えば、インクフイルムに高
電位側の電極層を形成せしめ、記録ヘツドの電極
を低電位側の電極のみで構成する記録ヘツドにお
いても、本発明の効果を享受することができる。
また、第2図及び第3図には、それぞれ、本発
明に従う記録電極が形成された記録ヘツドの先端
部の異なる一例が概念的に示されている。そこに
おいて、6は、基材としてのセラミツク基板であ
り、このセラミツク基板6上に、所定間隔で単層
の記録電極7若しくは複合層の記録電極9が形成
されている。勿論、これらの記録電極7,9にお
いては、高電位側の電極と低電位側の電極とが交
互に位置するようになつている。なお、これらの
記録ヘツドにあつては、例えば、第2図に番号:
8として示される電極端部が、インクフイルムの
抵抗層に対する接触部位とされているのである。
また、第3図において、記録電極9を構成する
上,下の二層9a,9bのうちの少なくとも一方
が、本発明に従う導体材料から構成されるように
なつている。
次に、本発明を更に具体的に明らかにするため
に、本発明に従う幾つかの実施例を示すが、本発
明はそのような実施例の記載によつて何等制限的
に解釈されるものではない。本発明には、その趣
旨を逸脱しない限りにおいて、以下の実施例の他
にも、また上記具体的記述以外にも、当業者の知
識に基づいて種々なる変更,修正,改良等を加え
得るものであつて、それらの実施形態の何れもが
本発明の範疇に属するものであることが理解され
るべきである。
(実施例)
基材として、ホウケイ酸ガラスとフツ素金雲母
を主成分とするガラスセラミツク基板(ヌープ硬
さ:400Kg/mm2)を用意し、その表面に、記録電
極として、スパツタ法で膜厚:3μmになるように
クロム膜を形成した。更に、通常のフオトエツチ
ング法を用いてパターン形成し、そして加熱処理
をして、記録電極のピツチ:100μm、電極幅:
50μm、電極数:1680の、第2図に示される如き
記録ヘツド(試料No.1)を作製した。
同様に、記録電極として、チタン、タンタル、
モリブデンシリサイド、タングステンシリサイ
ド、クロムシリサイド、タンタルシリサイド、ジ
ルコニウム、ニオブ、モリブデン・チタン合金、
ニクロム、ステンレス、モリブデン・クロムを、
各々スパツタで膜形成し、試料No.1と同様にパタ
ーン形成して、第2図に示される如き単層の記録
電極を有する記録ヘツド(試料No.2〜No.12及びNo.
22)を作製した。なお、これらの試料No.1〜No.12
及びNo.22には、パターン形成後に、必要に応じて
N2−H2混合ガス雰囲気中で900℃で加熱処理を
行なつた。
また、ホウケイ酸ガラスとフツ素金雲母を主成
分とするガラスセラミツク基板(ヌープ硬さ:
400Kg/mm2)に、チタン、クロム、モリブデンシ
リサイド、タングステンシリサイド、クロムシリ
サイド、ニクロムを、それぞれ同様にスパツタ法
で膜付けした後、更に、モリブデン膜(膜厚:
1μm)をスパツタ法で積層し、次に通常のフオト
エツチング法を用いて、試料No.1と同様にパター
ン形成し、必要に応じてN2ガス或いはN2−H2混
合ガス雰囲気中で400〜1000℃で加熱処理をして、
第3図に示される如き複合層からなる記録電極を
有する記録ヘツド(試料No.13〜No.18)を作製し
た。
次に、通常の厚膜ペーストの製造法に従つて、
クロム金属を主成分とし、有機バインダー、ガラ
ス成分、ビヒクル等を加えて混練したペーストを
調製した。そして、この得られたペーストを用
い、スクリーン印刷法で、フオルステライトセラ
ミツク基板(ヌープ硬さ:1000Kg/mm2)及びホウ
ケイ酸ガラスとアルミナを主成分とするガラスセ
ラミツク基板(ヌープ硬さ:1500Kg/mm2)に、そ
れぞれ、記録電極ピツチ:320μm、電極幅:
180μm、電極厚さ:15μm、電極数:640の記録ヘ
ツドのパターンを印刷し、900〜1000℃で酸素濃
度が50ppm以下のN2ガス或いはN2−H2−H2O混
合ガスの非酸化性雰囲気で焼成し、第2図の如き
記録ヘツド(試料No.19及びNo.20)を作製した。
また、モリブデンを主成分とした厚膜ペースト
を試料No.19と同様に調製し、この厚膜ペーストを
ホウケイ酸ガラスとフツ素金雲母を主成分とする
ガラスセラミツク基板(ヌープ硬さ:400Kg/mm2)
全面に電極厚:10μmになるように印刷し、焼成
した後、更にクロムメツキ(膜厚:1μm)をし
て、膜付基板を得た。次いで、この膜付基板に対
して、レーザ加工の技術を用いてパターン形成
し、第3図の如き複合層の記録電極とした。電極
ピツチ:100μm、電極幅:50μm、電極数:1680
の記録ヘツド(試料No.21)を作製した。
なお、比較例として、ホウケイ酸ガラスとフツ
素金雲母を主成分とするガラスセラミツク基板
(ヌープ硬さ:400Kg/mm2)の上に、スパツタ法で
膜厚:3μmになるようにタングステンを膜形成
し、試料No.1と同様にして、記録ヘツド(試料No.
23)を得た。更に、比較例として、ホウケイ酸ガ
ラスとフツ素金雲母(ヌープ硬さ:400Kg/mm2)
を主成分とするガラスセラミツク基板の上に、モ
リブデンを主成分とした厚膜ペーストを用い、試
料No.19と同様にして記録ヘツド(試料No.24)を得
た。
これらの試料の材料構成を第1表に記載した。
そして、これら試料No.1〜24の記録ヘツドをそ
れぞれ用いた記録装置を使用して、記録電極とフ
イルム抵抗層を絶えず摺動させ、印字を繰り返
し、印写品質の経時変化を検討する評価試験を行
なつた。なお、各記録電極間には20Vの電圧を印
加し、各電極間に2.7m秒のパルス幅で電流を流
した。フイルム抵抗層の電極間の抵抗値は4KΩ
である。得られた評価試験の結果を第2表に示
す。また、第2表には、印写品質の経時変化な
く、印写できる長さが載されている。
(Technical Field) The present invention relates to a recording device, and more specifically to a recording device using an electrically conductive heat transfer type thermal transfer film that prints images, characters, etc. at high speed and with high quality. This concerns the material of the head. (Prior art) Regarding the recording head of a recording device using a conventional current-carrying thermal transfer recording method, Japanese Patent Application Laid-Open No. 60-214973, Japanese Patent Application Laid-Open No. 60-214972, and Japanese Patent Application Laid-open No. 60-214971 are known.
No. 60-199669, etc.,
Various structures have been revealed. By the way, in the current-carrying thermal transfer recording method, as described in these patent publications, a current is passed through the resistance layer of the ink film through the recording electrode of the recording head, and the ink film is heated by the generated Joule heat. This is a method in which the desired printing or printing is performed by melting the ink layer and transferring it to a predetermined transfer paper. Therefore, in a recording head using an electrical thermal transfer method, it is necessary that the recording electrodes of the recording head are always in contact with the resistive layer so as to conduct electricity, and for this reason, the conventional recording head proposed in the above-mentioned patent publication cannot In consideration of mechanical wear between the electrode and the resistance layer, wear-resistant metals such as tungsten and molybdenum are used as recording electrode materials. (Problems) However, if printing is repeated over a long period of time with a recording head using these conductive materials, the wear resistance will gradually deteriorate, and the recording electrode on the high potential side will wear out, resulting in a decrease in resistance. A new problem was discovered: the electrical contact between the layer and the recording electrode decreased, the contact pressure became uneven, and the quality of the printed image significantly deteriorated. (Solution Means) The present invention solves the problems of the recording head described above, and includes an ink film having a resistive layer and a melting ink layer, and a recording head having at least a base material and a plurality of recording electrodes. By bringing at least a portion of the recording electrode of the recording head into contact with the resistance layer of the ink film and applying a voltage to a predetermined electrode of the recording electrode, current is applied to the resistance layer to generate Joule heat. In the recording apparatus, the base material is made of an abrasion-friendly, free-cutting ceramic material, and the base material is made of an abrasion-friendly, free-cutting ceramic material, and the recording device generates heat to melt the molten ink layer and transfer it to the transfer paper to obtain a predetermined record. At least the portion of the recording electrode of the head that conducts electricity to the resistance layer is made of a conductive material mainly composed of metal silicide, chromium,
titanium, tantalum, zirconium, hafnium,
A recording device characterized in that it is made of a conductive material (excluding silicide) having at least one kind selected from niobium as a constituent component. In other words, as a result of examining the causes of wear resistance over time in conventional recording electrodes and the wear and tear of high-potential side recording electrodes, we found that the conductive material used for recording electrodes gradually oxidizes due to heat generation of the resistive layer of the ink film, etc. They also discovered that the electrode on the high potential side, to which a voltage is applied so as to become an anode, reacts more easily with oxygen than the recording electrode on the low potential side. And like this,
When the recording electrode is oxidized to the inside, its wear resistance deteriorates and its electrical resistance increases significantly.
By discovering that the electrode part generates heat and wears out through peeling, abrasion, or sublimation, the present invention enables the electrode to not oxidize even when recording is repeated in the air or in an oxidizing atmosphere, and to significantly reduce the electrical charge. By manufacturing the recording head using a conductive material that does not increase resistance, the problems of deterioration of wear resistance over time and wear of the recording electrode on the high potential side are solved. (Specific explanation of the structure) By the way, in the recording device of the present invention, in the recording electrode containing metal silicide as a conductive material, Si contained in the metal silicide turns into SiO 2 and forms a thin oxide film on the electrode surface. Therefore, the metal silicide inside the electrode is not oxidized, and the SiO 2 coating has wear resistance, which is preferable. Among these, molybdenum silicide, tungsten silicide, chromium silicide, titanium silicide, and tantalum silicide are particularly preferred. Note that the SiO 2 film described above is not substantially formed on the portion of the ink film of the recording electrode where electricity is applied to the resistance layer because the portion is constantly sliding against the film. Furthermore, even if a SiO 2 film were formed on such a current-carrying part, the film would remain extremely thin compared to other parts of the recording electrode due to constant sliding contact with the ink film. When the electrode end surface slides against such an extremely thin
The SiO 2 film is shaved off to ensure good electrical conduction between the electrode and the film. In addition, materials containing conductor materials such as chromium, titanium, tantalum, zirconium, hafnium, niobium, etc., such as these metals, or alloys containing these metals, such as nichrome, molybdenum titanium, molybdenum chromium, etc. It is also a preferred recording electrode material because it forms a stable and strong oxide film and is not easily oxidized to the inside. Among them, chromium, titanium, and tantalum are preferable materials, but materials that have chromium as a constituent, such as chromium metals and alloys, have extremely high wear resistance not only of the main component but also of the oxide film. It is preferable because it is large. Of course, the recording electrode of the present invention may be in the form of a composite film of two or more layers using at least a portion of the recording electrode material described above. For example, recording electrodes consisting of two layers, a chromium metal layer and a molybdenum metal layer, a recording electrode consisting of two layers, a titanium metal layer and a molybdenum metal layer, and a molybdenum layer formed by heating a thick film paste whose main component is molybdenum. A recording electrode formed with a chromium metal layer is also a preferred recording electrode form. In manufacturing the recording head used in the recording device of the present invention, methods for forming recording electrodes containing the above conductive material on the surface of the substrate include vapor deposition, sputtering, plating, and CVD. ,
Any film forming technique such as ion plating may be used, or a paste or slurry containing the recording electrode material as the main component may be prepared and printed or coated on the substrate using a printing method, dipping method, etc. The film may be formed by heating. Regarding pattern formation, any method commonly used for circuit pattern formation, such as photo etching method, lift-off method, mask method, laser processing technology, slicing processing technology, screen printing technology, etc., can be used. Also, there is no difference in combining or using them. Furthermore, if necessary, electroplating or electroless plating may be performed on the recording electrode according to the present invention.
In order to improve conductivity, solderability, and bonding properties during mounting, Ni plating, Ni-B plating, Ni-W-P plating, Au plating, etc. are applied to the entire surface or part of the electrode. It's okay. Furthermore, in order to protect the electrode, if necessary, an insulating layer may be formed on the entire surface or part of the electrode by sputtering method, CVD method, ion plating method, vapor deposition method, anodic oxidation method, etc. Even if it is printed and formed with paste,
It may be formed by applying a coating liquid for an insulating layer. There is no problem even if an electrode is further formed on this insulating layer as described above. Furthermore, in the recording device of the present invention, the base material of the recording head is preferably a heat-resistant material, especially an easily abrasion-resistant material, so that the recording electrode material and the film resistance layer come into good contact even after repeated recording. Free-machining ceramic materials (including glass ceramics) are used, which have lower hardness and are more abrasive than recording electrode materials. Among these, glass-ceramic substrates containing mica are preferred because they have excellent free-machinability and low hardness. It is. An example of a basic switch connection diagram for each recording electrode formed on a predetermined base material and made of the above conductive material is shown in FIG. There, 1 is a power supply, and the high potential side (recording) is connected to the positive (high potential) side via switch 2.
Electrode 4 is connected and its negative (low potential)
A (recording) electrode 5 on the low potential side is connected to the side via a switch 3, while electrodes 4 on the high potential side and electrodes 5 on the low potential side are arranged alternately. By switching the respective switches 2 and 3, a current is selectively passed through the film resistance layer between all adjacent electrodes 4 and 5. As is well known, the resistance of the ink film is Corresponding portions of the layer are heated by Joule heat, melting the molten ink layer and transferring desired images, characters, etc. onto the transfer target. In such recording electrodes 4 and 5, the present invention is particularly advantageously applied to the electrode 4 on the high potential side, but the present invention can also be applied to the electrode 5 on the low potential side. You can fully enjoy the excellent effects of. For example, the effects of the present invention can also be enjoyed in a recording head in which an electrode layer on the high potential side is formed on the ink film and the electrodes of the recording head are composed only of electrodes on the low potential side. Further, FIGS. 2 and 3 conceptually illustrate different examples of the tip portion of a recording head in which recording electrodes according to the present invention are formed. Here, reference numeral 6 denotes a ceramic substrate as a base material, and on this ceramic substrate 6, single layer recording electrodes 7 or composite layer recording electrodes 9 are formed at predetermined intervals. Of course, in these recording electrodes 7 and 9, the electrodes on the high potential side and the electrodes on the low potential side are arranged alternately. For these recording heads, for example, numbers are shown in Figure 2:
The end portion of the electrode indicated as 8 is the contact portion of the ink film with the resistance layer.
Further, in FIG. 3, at least one of the upper and lower two layers 9a and 9b constituting the recording electrode 9 is made of a conductive material according to the present invention. Next, in order to clarify the present invention more specifically, some examples according to the present invention will be shown, but the present invention should not be construed in any way limited by the description of such examples. do not have. In addition to the following examples and the above-mentioned specific description, various changes, modifications, improvements, etc. may be made to the present invention based on the knowledge of those skilled in the art, without departing from the spirit thereof. It should be understood that any of these embodiments fall within the scope of the present invention. (Example) A glass-ceramic substrate (Knoop hardness: 400 Kg/mm 2 ) containing borosilicate glass and fluorine phlogopite as the main components was prepared as a base material, and a film was deposited on its surface as a recording electrode by sputtering. A chromium film was formed to have a thickness of 3 μm. Furthermore, a pattern was formed using a normal photoetching method, and heat treatment was performed to form recording electrodes with a pitch of 100 μm and an electrode width:
A recording head (sample No. 1) as shown in FIG. 2 was prepared with a diameter of 50 μm and number of electrodes: 1680. Similarly, titanium, tantalum,
Molybdenum silicide, tungsten silicide, chromium silicide, tantalum silicide, zirconium, niobium, molybdenum-titanium alloy,
Nichrome, stainless steel, molybdenum/chromium,
A film was formed using sputtering, and a pattern was formed in the same manner as Sample No. 1 to form a recording head (Samples No. 2 to No. 12 and No. 1) having a single-layer recording electrode as shown in FIG.
22) was prepared. In addition, these samples No. 1 to No. 12
and No. 22, if necessary after pattern formation.
Heat treatment was performed at 900°C in a N 2 -H 2 mixed gas atmosphere. In addition, a glass-ceramic substrate (Knoop hardness:
400Kg/mm 2 ), titanium, chromium, molybdenum silicide, tungsten silicide, chromium silicide, and nichrome were deposited in the same manner using the sputtering method, and then a molybdenum film (thickness:
1 μm) using the sputtering method, and then patterned using the usual photoetching method in the same manner as sample No. 1. If necessary, 400 nm in N 2 gas or N 2 -H 2 mixed gas atmosphere was applied. Heat treated at ~1000℃,
Recording heads (Samples No. 13 to No. 18) having recording electrodes made of composite layers as shown in FIG. 3 were prepared. Next, according to the usual thick film paste manufacturing method,
A paste containing chromium metal as the main component and kneaded with an organic binder, a glass component, a vehicle, etc. was prepared. Then, using the obtained paste, screen printing was performed to create a forsterite ceramic substrate (Knoop hardness: 1000 Kg/mm 2 ) and a glass ceramic substrate (Knoop hardness: 1500 Kg/mm 2 ) whose main components are borosilicate glass and alumina. mm 2 ), recording electrode pitch: 320 μm, electrode width:
Print a recording head pattern of 180 μm, electrode thickness: 15 μm, number of electrodes: 640, and non-oxidize N 2 gas or N 2 − H 2 − H 2 O mixed gas with an oxygen concentration of 50 ppm or less at 900 to 1000°C. The recording heads (Samples No. 19 and No. 20) as shown in FIG. 2 were prepared by firing in a neutral atmosphere. In addition, a thick film paste containing molybdenum as the main component was prepared in the same manner as sample No. 19, and this thick film paste was applied to a glass-ceramic substrate (Knoop hardness: 400 kg/ mm2 )
After printing on the entire surface to give an electrode thickness of 10 μm and baking, chrome plating (film thickness: 1 μm) was performed to obtain a film-coated substrate. Next, a pattern was formed on this film-coated substrate using a laser processing technique to form a composite layer recording electrode as shown in FIG. Electrode pitch: 100μm, electrode width: 50μm, number of electrodes: 1680
A recording head (sample No. 21) was prepared. As a comparative example, tungsten was deposited on a glass-ceramic substrate (Knoop hardness: 400 Kg/mm 2 ) whose main components were borosilicate glass and fluorine phlogopite to a thickness of 3 μm using the sputtering method. In the same manner as sample No. 1, attach the recording head (sample no.
23) was obtained. Furthermore, as a comparative example, borosilicate glass and fluorine phlogopite (Knoop hardness: 400Kg/mm 2 )
A recording head (Sample No. 24) was obtained in the same manner as Sample No. 19 using a thick film paste containing molybdenum as a main component on a glass ceramic substrate containing as a main component. The material composition of these samples is listed in Table 1. Then, using a recording device using each of the recording heads of Samples Nos. 1 to 24, an evaluation test was conducted in which the recording electrode and film resistance layer were constantly slid, printing was repeated, and changes in printing quality over time were examined. I did this. Note that a voltage of 20 V was applied between each recording electrode, and a current was passed between each electrode with a pulse width of 2.7 msec. The resistance value between the electrodes of the film resistance layer is 4KΩ
It is. The results of the evaluation tests obtained are shown in Table 2. Furthermore, Table 2 lists the lengths that can be printed without any change in printing quality over time.
【表】【table】
【表】【table】
【表】【table】
【表】
(発明の効果)
通電型熱転写記録方式では、電極とフイルム抵
抗層が絶えず摺動しているので、記録電極の摩擦
が問題になり、また電極とフイルム抵抗層とが、
安定に電気的接触することが重要になる。
本発明によれば、酸化性雰囲気において印写を
繰り返しても、記録電極表面が安定で強固な酸化
被膜を形成するので、フイルム抵抗層での発熱等
による記録電極の消耗がなく、一方、基材に易摩
耗性の快削性セラミツクス材料を用いているの
で、常にフイルム抵抗層と記録電極が接触してい
る状態になり、常に安定した印写品質が得られ
る。従つて、本発明の記録装置は、高速、高記録
品質、高信頼性を有するので、画像、文字等を印
写、印字する優れた通電型熱転写記録装置とな
る。[Table] (Effects of the invention) In the current-carrying thermal transfer recording method, since the electrode and the film resistance layer are constantly sliding, friction of the recording electrode becomes a problem, and the contact between the electrode and the film resistance layer also becomes a problem.
It is important to make stable electrical contact. According to the present invention, even if printing is repeated in an oxidizing atmosphere, a stable and strong oxide film is formed on the surface of the recording electrode, so there is no wear on the recording electrode due to heat generation in the film resistance layer, etc. Since abrasion-prone, free-cutting ceramic material is used for the material, the film resistance layer and the recording electrode are always in contact with each other, and stable printing quality can always be obtained. Therefore, since the recording apparatus of the present invention has high speed, high recording quality, and high reliability, it becomes an excellent current-carrying type thermal transfer recording apparatus for printing images, characters, and the like.
第1図は、各記録電極への基本的なスイツチ結
線図の一例である。また、第2図は、実施例にお
ける試料No.1〜No.12、No.19〜No.20及びNo.22の記録
ヘツドの先端部の概念を示した斜視図であり、第
3図は実施例における試料No.13〜No.18及びNo.21の
記録ヘツドの先端部の概念を示した斜視図であ
る。
1……電源、2……高電位側のスイツチ、3…
…低電位側のスイツチ、4……高電位側の電極、
5……低電位側の電極、6……セラミツク基板、
7……記録電極(単層)、8……フイルム抵抗層
との接触部、9……記録電極(複合層)。
FIG. 1 is an example of a basic switch connection diagram to each recording electrode. Further, FIG. 2 is a perspective view showing the concept of the tip of the recording head of samples No. 1 to No. 12, No. 19 to No. 20, and No. 22 in the example, and FIG. FIG. 3 is a perspective view showing the concept of the tip of the recording head of samples No. 13 to No. 18 and No. 21 in the example. 1...Power supply, 2...High potential side switch, 3...
...Low potential side switch, 4...High potential side electrode,
5...Low potential side electrode, 6...Ceramic substrate,
7... Recording electrode (single layer), 8... Contact portion with film resistance layer, 9... Recording electrode (composite layer).
Claims (1)
ルムと、少なくとも基材及び複数の記録電極を有
する記録ヘツドとを含んで構成され、該記録ヘツ
ドの記録電極の少なくとも一部分を前記インクフ
イルムの抵抗層に接触させ、且つ前記記録電極の
中の所定の電極に電圧を印加することにより、該
抵抗層に通電してジユール熱にて発熱せしめ、前
記融解インク層を融解して被転写紙に転写せし
め、所定の記録を得るようにした記録装置におい
て、 前記基材が易摩耗性の快削性セラミツクス材料
からなり、且つ前記記録ヘツドの記録電極の少な
くとも前記抵抗層に通電する部分が、金属硅化物
を主成分とする導体材料、或いはクロム、チタ
ン、タンタル、ジルコニウム、ハフニウム、ニオ
ブのうちから選ばれた少なくとも1種を構成成分
とする導体材料(但し、硅化物を除く)からなる
ことを特徴とする記録装置。 2 前記記録ヘツドの記録電極が、クロム、チタ
ン、タンタル、モリブデンシリサイド、タングス
テンシリサイド、クロムシリサイド、チタンシリ
サイド、タンタルシリサイド、モリブデンクロム
のうちから選ばれた少なくとも1種を主成分とし
た導体材料を用いて形成されていることを特徴と
する特許請求範囲第1項記載の記録装置。 3 前記記録ヘツドの基材が、雲母を含有するガ
ラスセラミツクから構成されていることを特徴と
する特許請求の範囲第1項又は第2項記載の記録
装置。 4 前記記録ヘツドの記録電極が、前記クロム、
チタン、タンタル、ジルコニウム、ハフニウムニ
オブのうちから選ばれた少なくとも1種の金属若
しくはそれら金属の少なくとも1種を含む合金を
用いて形成された電極パターンを熱処理すること
によつて形成されたものである特許請求の範囲第
1項乃至第3項の何れかに記載の記録装置。[Scope of Claims] 1. An ink film having a resistive layer and a molten ink layer, and a recording head having at least a base material and a plurality of recording electrodes, wherein at least a portion of the recording electrodes of the recording head are covered with the ink. By contacting the resistive layer of the film and applying a voltage to a predetermined electrode in the recording electrode, the resistive layer is energized to generate heat with Joule heat, melting the melting ink layer and transferring the ink layer. In a recording device configured to obtain a predetermined record by transferring data to paper, the base material is made of an easily abradable and free-cutting ceramic material, and at least a portion of the recording electrode of the recording head that conducts electricity to the resistive layer is provided. , a conductive material whose main component is metal silicide, or a conductive material whose constituent component is at least one selected from chromium, titanium, tantalum, zirconium, hafnium, and niobium (excluding silicide) A recording device characterized by: 2. The recording electrode of the recording head is made of a conductive material containing at least one selected from chromium, titanium, tantalum, molybdenum silicide, tungsten silicide, chromium silicide, titanium silicide, tantalum silicide, and molybdenum chromium as a main component. The recording device according to claim 1, characterized in that the recording device is formed by: 3. The recording device according to claim 1 or 2, wherein the base material of the recording head is made of glass ceramic containing mica. 4. The recording electrode of the recording head comprises the chromium,
It is formed by heat treating an electrode pattern formed using at least one metal selected from titanium, tantalum, zirconium, hafnium niobium, or an alloy containing at least one of these metals. A recording device according to any one of claims 1 to 3.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61082480A JPS62238767A (en) | 1986-04-10 | 1986-04-10 | Recorder |
US07/033,730 US5059985A (en) | 1986-04-10 | 1987-04-03 | Thermal printing apparatus |
EP87303149A EP0241304B1 (en) | 1986-04-10 | 1987-04-10 | Thermal printing apparatus |
DE8787303149T DE3783256T2 (en) | 1986-04-10 | 1987-04-10 | THERMAL PRINTER. |
US07/607,843 US5077563A (en) | 1986-04-10 | 1990-11-05 | Thermally printing head operable with electrically resistive layer provided on printt film or ribbon or on recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61082480A JPS62238767A (en) | 1986-04-10 | 1986-04-10 | Recorder |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62238767A JPS62238767A (en) | 1987-10-19 |
JPH0535074B2 true JPH0535074B2 (en) | 1993-05-25 |
Family
ID=13775677
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61082480A Granted JPS62238767A (en) | 1986-04-10 | 1986-04-10 | Recorder |
Country Status (4)
Country | Link |
---|---|
US (1) | US5059985A (en) |
EP (1) | EP0241304B1 (en) |
JP (1) | JPS62238767A (en) |
DE (1) | DE3783256T2 (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06103787B2 (en) * | 1988-07-26 | 1994-12-14 | 日本碍子株式会社 | Glass-ceramic substrate with conductive film |
JPH0825288B2 (en) * | 1988-09-22 | 1996-03-13 | アルプス電気株式会社 | Thermal head |
JPH0286478A (en) * | 1988-09-22 | 1990-03-27 | Canon Inc | Thermal transfer recorder |
JPH02145348A (en) * | 1988-11-29 | 1990-06-04 | Fuji Xerox Co Ltd | Print recording head |
JP2503080B2 (en) * | 1988-12-06 | 1996-06-05 | 日本碍子株式会社 | Energization type recording head |
DE68917875T2 (en) * | 1988-12-06 | 1995-03-02 | Ngk Insulators Ltd | Recording head consisting of a substrate carrying an electrode with a thin-walled contact end part. |
US5184344A (en) * | 1989-08-21 | 1993-02-02 | Ngk Insulators, Ltd. | Recording head including electrode supporting substrate having thin-walled contact end portion, and substrate-reinforcing layer |
KR960006590B1 (en) * | 1990-02-01 | 1996-05-20 | 가부시끼가이샤 도시바 | Sputtering target |
JP2780850B2 (en) * | 1990-05-16 | 1998-07-30 | 日本碍子株式会社 | Energized recording head |
JP2780849B2 (en) * | 1990-05-16 | 1998-07-30 | 日本碍子株式会社 | Energized recording head |
JP2872836B2 (en) * | 1991-08-23 | 1999-03-24 | 日本碍子株式会社 | Energized recording head |
US5317343A (en) * | 1992-09-21 | 1994-05-31 | Eastman Kodak Company | Electrodes for resistive ribbon thermal print head |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55135669A (en) * | 1979-04-09 | 1980-10-22 | Nec Corp | Electrode for electric recording |
JPS5664883A (en) * | 1979-07-20 | 1981-06-02 | Olivetti & Co Spa | Writing head and its manufacture |
JPS60214973A (en) * | 1984-03-23 | 1985-10-28 | Seiko Epson Corp | Printer |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3340381A (en) * | 1963-10-29 | 1967-09-05 | Corning Glass Works | Thermal printing wafer and method for making the same |
US3862394A (en) * | 1974-04-03 | 1975-01-21 | Honeywell Inc | Thermal recording print head and method for manufacturing same |
DE2600340A1 (en) * | 1976-01-07 | 1977-08-25 | Sachs Elektronik Kg Hugo | COMB-LIKE ELECTRODE ARRANGEMENT |
JPS564481A (en) * | 1979-06-22 | 1981-01-17 | Tdk Corp | Thermal pen tip and preparation thereof |
JPS5955737A (en) * | 1982-09-24 | 1984-03-30 | ヤマハ株式会社 | Cushion material spare pasting device for manufacturing corrugated cardboard box |
NZ203259A (en) * | 1982-09-27 | 1986-05-09 | Firestone Tire & Rubber Co | Tyre building drum fabric applicator,measurer & crush cutter |
JPS5955736A (en) * | 1982-09-27 | 1984-03-30 | 東洋製罐株式会社 | Heat sealing method |
JPS5955735A (en) * | 1982-09-27 | 1984-03-30 | Ain Eng Kk | Molding method of ligneous foamed noninflammable board |
JPS59169872A (en) * | 1983-03-17 | 1984-09-25 | Mitsubishi Electric Corp | Thermal head and manufacture thereof |
JPS59169871A (en) * | 1983-03-17 | 1984-09-25 | Fujitsu Ltd | Thermal head |
GB2147763B (en) * | 1983-10-05 | 1987-03-04 | Suwa Seikosha Kk | Printing apparatus |
US4612433A (en) * | 1983-12-28 | 1986-09-16 | Pentel Kabushiki Kaisha | Thermal head and manufacturing method thereof |
EP0150579B1 (en) * | 1984-01-27 | 1987-09-16 | Kabushiki Kaisha Toshiba | Thermal head |
JPS60174664A (en) * | 1984-02-21 | 1985-09-07 | Seiko Epson Corp | Recording head |
JPS60199669A (en) * | 1984-03-23 | 1985-10-09 | Seiko Epson Corp | Printing device |
US4684960A (en) * | 1984-03-23 | 1987-08-04 | Seiko Epson Kabushiki Kaisha | Thermoelectric printing apparatus |
-
1986
- 1986-04-10 JP JP61082480A patent/JPS62238767A/en active Granted
-
1987
- 1987-04-03 US US07/033,730 patent/US5059985A/en not_active Expired - Lifetime
- 1987-04-10 DE DE8787303149T patent/DE3783256T2/en not_active Expired - Lifetime
- 1987-04-10 EP EP87303149A patent/EP0241304B1/en not_active Expired
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55135669A (en) * | 1979-04-09 | 1980-10-22 | Nec Corp | Electrode for electric recording |
JPS5664883A (en) * | 1979-07-20 | 1981-06-02 | Olivetti & Co Spa | Writing head and its manufacture |
JPS60214973A (en) * | 1984-03-23 | 1985-10-28 | Seiko Epson Corp | Printer |
Also Published As
Publication number | Publication date |
---|---|
DE3783256D1 (en) | 1993-02-11 |
EP0241304A2 (en) | 1987-10-14 |
US5059985A (en) | 1991-10-22 |
DE3783256T2 (en) | 1993-05-27 |
EP0241304B1 (en) | 1992-12-30 |
JPS62238767A (en) | 1987-10-19 |
EP0241304A3 (en) | 1989-07-26 |
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