JPH0214319B2 - - Google Patents
Info
- Publication number
- JPH0214319B2 JPH0214319B2 JP19018984A JP19018984A JPH0214319B2 JP H0214319 B2 JPH0214319 B2 JP H0214319B2 JP 19018984 A JP19018984 A JP 19018984A JP 19018984 A JP19018984 A JP 19018984A JP H0214319 B2 JPH0214319 B2 JP H0214319B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crucible
- fine powder
- compound semiconductor
- aln
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 15
- 238000012544 monitoring process Methods 0.000 claims description 14
- 239000000843 powder Substances 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910017109 AlON Inorganic materials 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 4
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 238000010304 firing Methods 0.000 claims 1
- 238000000465 moulding Methods 0.000 claims 1
- 238000007493 shaping process Methods 0.000 claims 1
- 239000002994 raw material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 239000000565 sealant Substances 0.000 description 6
- 238000009826 distribution Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000001272 pressureless sintering Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19018984A JPS6168387A (ja) | 1984-09-11 | 1984-09-11 | 化合物半導体単結晶の製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19018984A JPS6168387A (ja) | 1984-09-11 | 1984-09-11 | 化合物半導体単結晶の製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6168387A JPS6168387A (ja) | 1986-04-08 |
| JPH0214319B2 true JPH0214319B2 (enrdf_load_stackoverflow) | 1990-04-06 |
Family
ID=16253931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19018984A Granted JPS6168387A (ja) | 1984-09-11 | 1984-09-11 | 化合物半導体単結晶の製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6168387A (enrdf_load_stackoverflow) |
-
1984
- 1984-09-11 JP JP19018984A patent/JPS6168387A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6168387A (ja) | 1986-04-08 |
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