JPH0213831B2 - - Google Patents

Info

Publication number
JPH0213831B2
JPH0213831B2 JP58044608A JP4460883A JPH0213831B2 JP H0213831 B2 JPH0213831 B2 JP H0213831B2 JP 58044608 A JP58044608 A JP 58044608A JP 4460883 A JP4460883 A JP 4460883A JP H0213831 B2 JPH0213831 B2 JP H0213831B2
Authority
JP
Japan
Prior art keywords
barrier
region
fermi level
interface
base region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58044608A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58192384A (ja
Inventor
Neruson Jakuson Toomasu
Matsukufuaasun Utsudooru Jerii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS58192384A publication Critical patent/JPS58192384A/ja
Publication of JPH0213831B2 publication Critical patent/JPH0213831B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/084—Ion implantation of compound devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/14—Schottky barrier contacts

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58044608A 1982-04-27 1983-03-18 半導体素子 Granted JPS58192384A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/372,359 US4532533A (en) 1982-04-27 1982-04-27 Ballistic conduction semiconductor device
US372359 1999-08-11

Publications (2)

Publication Number Publication Date
JPS58192384A JPS58192384A (ja) 1983-11-09
JPH0213831B2 true JPH0213831B2 (en, 2012) 1990-04-05

Family

ID=23467809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58044608A Granted JPS58192384A (ja) 1982-04-27 1983-03-18 半導体素子

Country Status (4)

Country Link
US (1) US4532533A (en, 2012)
EP (1) EP0092643B1 (en, 2012)
JP (1) JPS58192384A (en, 2012)
DE (1) DE3379091D1 (en, 2012)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60239066A (ja) * 1984-05-11 1985-11-27 Hitachi Ltd 半導体装置
US4712122A (en) * 1984-07-26 1987-12-08 Research Development Corp. Heterojunction gate ballistic JFET with channel thinner than Debye length
JPS61248561A (ja) * 1985-04-25 1986-11-05 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション 半導体構造体
JPS63153867A (ja) * 1986-08-04 1988-06-27 Fujitsu Ltd 共鳴トンネリング半導体装置
FI81682C (fi) * 1986-12-29 1990-11-12 Elecid Ab Oy Kabelbrottdetektor.
US4839702A (en) * 1987-11-20 1989-06-13 Bell Communications Research, Inc. Semiconductor device based on charge emission from a quantum well
US4847666A (en) * 1987-12-17 1989-07-11 General Motors Corporation Hot electron transistors
US4850227A (en) * 1987-12-22 1989-07-25 Delco Electronics Corporation Pressure sensor and method of fabrication thereof
US5349214A (en) * 1993-09-13 1994-09-20 Motorola, Inc. Complementary heterojunction device
US6507046B2 (en) * 2001-05-11 2003-01-14 Cree, Inc. High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL294716A (en, 2012) * 1962-06-29 1900-01-01
US3289052A (en) * 1963-10-14 1966-11-29 California Inst Res Found Surface barrier indium arsenide transistor
US3349297A (en) * 1964-06-23 1967-10-24 Bell Telephone Labor Inc Surface barrier semiconductor translating device
US3486949A (en) * 1966-03-25 1969-12-30 Massachusetts Inst Technology Semiconductor heterojunction diode
US4173763A (en) * 1977-06-09 1979-11-06 International Business Machines Corporation Heterojunction tunneling base transistor
US4163237A (en) * 1978-04-24 1979-07-31 Bell Telephone Laboratories, Incorporated High mobility multilayered heterojunction devices employing modulated doping
EP0033037B1 (en) * 1979-12-28 1990-03-21 Fujitsu Limited Heterojunction semiconductor devices
US4286275A (en) * 1980-02-04 1981-08-25 International Business Machines Corporation Semiconductor device
US4326208A (en) * 1980-03-26 1982-04-20 International Business Machines Corporation Semiconductor inversion layer transistor
US4366493A (en) * 1980-06-20 1982-12-28 International Business Machines Corporation Semiconductor ballistic transport device
US4395722A (en) * 1980-10-21 1983-07-26 The United States Of America As Represented By The Secretary Of The Army Heterojunction transistor
EP0068064A1 (en) * 1981-06-30 1983-01-05 International Business Machines Corporation Semiconductor circuit including a resonant quantum mechanical tunnelling triode device
FR2520157B1 (fr) * 1982-01-18 1985-09-13 Labo Electronique Physique Dispositif semi-conducteur du genre transistor a heterojonction(s)

Also Published As

Publication number Publication date
EP0092643B1 (en) 1989-01-25
EP0092643A2 (en) 1983-11-02
DE3379091D1 (en) 1989-03-02
US4532533A (en) 1985-07-30
JPS58192384A (ja) 1983-11-09
EP0092643A3 (en) 1986-10-01

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