JPH021377B2 - - Google Patents
Info
- Publication number
- JPH021377B2 JPH021377B2 JP57008152A JP815282A JPH021377B2 JP H021377 B2 JPH021377 B2 JP H021377B2 JP 57008152 A JP57008152 A JP 57008152A JP 815282 A JP815282 A JP 815282A JP H021377 B2 JPH021377 B2 JP H021377B2
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- well
- type
- mos transistor
- impurity concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000012535 impurity Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 230000000295 complement effect Effects 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 230000005669 field effect Effects 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 239000010410 layer Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000010354 integration Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57008152A JPS58124269A (ja) | 1982-01-21 | 1982-01-21 | 相補型絶縁ゲート電界効果半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57008152A JPS58124269A (ja) | 1982-01-21 | 1982-01-21 | 相補型絶縁ゲート電界効果半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58124269A JPS58124269A (ja) | 1983-07-23 |
| JPH021377B2 true JPH021377B2 (ko) | 1990-01-11 |
Family
ID=11685340
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57008152A Granted JPS58124269A (ja) | 1982-01-21 | 1982-01-21 | 相補型絶縁ゲート電界効果半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58124269A (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0770605B2 (ja) * | 1985-09-03 | 1995-07-31 | 富士通株式会社 | 半導体装置の製造方法 |
| JP2745228B2 (ja) * | 1989-04-05 | 1998-04-28 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| JP2730650B2 (ja) * | 1990-06-11 | 1998-03-25 | 松下電子工業株式会社 | 半導体装置の製造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5098790A (ko) * | 1973-12-27 | 1975-08-06 | ||
| JPS5493981A (en) * | 1978-01-09 | 1979-07-25 | Toshiba Corp | Semiconductor device |
| JPS5582461A (en) * | 1978-12-18 | 1980-06-21 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit device |
| JPS5694670A (en) * | 1979-12-27 | 1981-07-31 | Fujitsu Ltd | Complementary type mis semiconductor device |
-
1982
- 1982-01-21 JP JP57008152A patent/JPS58124269A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5098790A (ko) * | 1973-12-27 | 1975-08-06 | ||
| JPS5493981A (en) * | 1978-01-09 | 1979-07-25 | Toshiba Corp | Semiconductor device |
| JPS5582461A (en) * | 1978-12-18 | 1980-06-21 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit device |
| JPS5694670A (en) * | 1979-12-27 | 1981-07-31 | Fujitsu Ltd | Complementary type mis semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58124269A (ja) | 1983-07-23 |
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