JPH02129098A - 不純物添加半導体結晶の製造方法 - Google Patents

不純物添加半導体結晶の製造方法

Info

Publication number
JPH02129098A
JPH02129098A JP28047888A JP28047888A JPH02129098A JP H02129098 A JPH02129098 A JP H02129098A JP 28047888 A JP28047888 A JP 28047888A JP 28047888 A JP28047888 A JP 28047888A JP H02129098 A JPH02129098 A JP H02129098A
Authority
JP
Japan
Prior art keywords
crystal
impurity
semiconductor crystal
heat treatment
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28047888A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0367998B2 (enrdf_load_stackoverflow
Inventor
Takeshi Maruyama
剛 丸山
Yasuo Okuno
奥野　保男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP28047888A priority Critical patent/JPH02129098A/ja
Publication of JPH02129098A publication Critical patent/JPH02129098A/ja
Publication of JPH0367998B2 publication Critical patent/JPH0367998B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP28047888A 1988-11-08 1988-11-08 不純物添加半導体結晶の製造方法 Granted JPH02129098A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28047888A JPH02129098A (ja) 1988-11-08 1988-11-08 不純物添加半導体結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28047888A JPH02129098A (ja) 1988-11-08 1988-11-08 不純物添加半導体結晶の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP19576093A Division JPH06293600A (ja) 1993-08-06 1993-08-06 不純物添加半導体結晶の製造方法

Publications (2)

Publication Number Publication Date
JPH02129098A true JPH02129098A (ja) 1990-05-17
JPH0367998B2 JPH0367998B2 (enrdf_load_stackoverflow) 1991-10-24

Family

ID=17625638

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28047888A Granted JPH02129098A (ja) 1988-11-08 1988-11-08 不純物添加半導体結晶の製造方法

Country Status (1)

Country Link
JP (1) JPH02129098A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06293600A (ja) * 1993-08-06 1994-10-21 Stanley Electric Co Ltd 不純物添加半導体結晶の製造方法
US5535699A (en) * 1993-05-31 1996-07-16 Mitsubishi Denki Kabushiki Kaisha Method of making II-VI semiconductor infrared light detector
JP2009161401A (ja) * 2008-01-08 2009-07-23 Mitsubishi Chemicals Corp 単結晶中の不純物元素含有量の制御方法、単結晶および半導体デバイス

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5535699A (en) * 1993-05-31 1996-07-16 Mitsubishi Denki Kabushiki Kaisha Method of making II-VI semiconductor infrared light detector
JPH06293600A (ja) * 1993-08-06 1994-10-21 Stanley Electric Co Ltd 不純物添加半導体結晶の製造方法
JP2009161401A (ja) * 2008-01-08 2009-07-23 Mitsubishi Chemicals Corp 単結晶中の不純物元素含有量の制御方法、単結晶および半導体デバイス

Also Published As

Publication number Publication date
JPH0367998B2 (enrdf_load_stackoverflow) 1991-10-24

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