JPH02127032U - - Google Patents

Info

Publication number
JPH02127032U
JPH02127032U JP3708889U JP3708889U JPH02127032U JP H02127032 U JPH02127032 U JP H02127032U JP 3708889 U JP3708889 U JP 3708889U JP 3708889 U JP3708889 U JP 3708889U JP H02127032 U JPH02127032 U JP H02127032U
Authority
JP
Japan
Prior art keywords
plasma
partition wall
sample
processing chamber
sample processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3708889U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3708889U priority Critical patent/JPH02127032U/ja
Publication of JPH02127032U publication Critical patent/JPH02127032U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案に係るプラズマアツシング装置
の模式的正面断面図、第2図は従来のバレル型の
プラズマアツシング装置の模式的正面断面図、第
3図は従来のダウンフロー型のプラズマアツシン
グ装置の模式的正面断面図、第4図は従来の誘電
体被覆線路を利用する方式のプラズマアツシング
装置の模式的正面断面図である。 13…仕切壁、4…プラズマ生成室、5…試料
処理室、S…試料。
FIG. 1 is a schematic front sectional view of a plasma ashing device according to the present invention, FIG. 2 is a schematic front sectional view of a conventional barrel-type plasma ashing device, and FIG. 3 is a schematic front sectional view of a conventional down-flow plasma ashing device. FIG. 4 is a schematic front sectional view of a plasma ashing device using a conventional dielectric covered line. 13... Partition wall, 4... Plasma generation chamber, 5... Sample processing chamber, S... Sample.

Claims (1)

【実用新案登録請求の範囲】 プラズマ生成室と、試料を処理する試料処理室
との間に、該試料処理室へプラズマを導入する複
数の孔を有する仕切壁を設けたプラズマアツシン
グ装置において、 前記プラズマ導入孔の面積率が、前記仕切壁の
中央部から周辺部に向かうに従つて大きくなるよ
うにしたことを特徴とするプラズマアツシング装
置。
[Scope of Claim for Utility Model Registration] A plasma athering device in which a partition wall having a plurality of holes for introducing plasma into the sample processing chamber is provided between a plasma generation chamber and a sample processing chamber for processing a sample, A plasma ashing device characterized in that the area ratio of the plasma introduction holes increases from the center to the periphery of the partition wall.
JP3708889U 1989-03-28 1989-03-28 Pending JPH02127032U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3708889U JPH02127032U (en) 1989-03-28 1989-03-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3708889U JPH02127032U (en) 1989-03-28 1989-03-28

Publications (1)

Publication Number Publication Date
JPH02127032U true JPH02127032U (en) 1990-10-19

Family

ID=31543885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3708889U Pending JPH02127032U (en) 1989-03-28 1989-03-28

Country Status (1)

Country Link
JP (1) JPH02127032U (en)

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