JPH02125330U - - Google Patents
Info
- Publication number
- JPH02125330U JPH02125330U JP3307889U JP3307889U JPH02125330U JP H02125330 U JPH02125330 U JP H02125330U JP 3307889 U JP3307889 U JP 3307889U JP 3307889 U JP3307889 U JP 3307889U JP H02125330 U JPH02125330 U JP H02125330U
- Authority
- JP
- Japan
- Prior art keywords
- sample
- plasma
- ashing device
- plasma ashing
- partition wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004380 ashing Methods 0.000 claims description 7
- 238000005192 partition Methods 0.000 claims description 3
Landscapes
- Drying Of Semiconductors (AREA)
Description
第１図は本考案に係るプラズマアツシング装置
の模式的正面断面図、第２図は従来のバレル型の
プラズマアツシング装置の模式的正面断面図、第
３図は従来のダウンフロー型のプラズマアツシン
グ装置の模式的正面断面図、第４図は従来の誘電
体被覆線路を利用する方式のプラズマアツシング
装置の模式的正面断面図である。
１……反応器、２……誘電体被覆線路、１３…
…仕切壁、１４……プラズマ生成室、１５……試
料処理室、Ｓ……試料。
FIG. 1 is a schematic front sectional view of a plasma ashing device according to the present invention, FIG. 2 is a schematic front sectional view of a conventional barrel-type plasma ashing device, and FIG. 3 is a schematic front sectional view of a conventional down-flow plasma ashing device. FIG. 4 is a schematic front sectional view of a plasma ashing device using a conventional dielectric covered line. 1...Reactor, 2...Dielectric covered line, 13...
...Partition wall, 14...Plasma generation chamber, 15...Sample processing chamber, S...Sample.
Claims (1)
との間に、該試料処理室へのプラズマ導入孔を有
する仕切壁を設けたプラズマアツシング装置にお
いて、 前記仕切壁を、これと前記試料との距離が該
試料の中心部ほど大きくなるような形状にしたこ
とを特徴とするプラズマアツシング装置。[Scope of Claim for Utility Model Registration] A plasma ashing device comprising a partition wall having a plasma introduction hole into the sample processing chamber between a plasma generation chamber and a sample processing chamber for processing a sample, the partition wall comprising: A plasma ashing device characterized in that the distance between the plasma ashing device and the sample increases toward the center of the sample.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989033078U JPH0737314Y2 (en) | 1989-03-22 | 1989-03-22 | Plasma ashing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989033078U JPH0737314Y2 (en) | 1989-03-22 | 1989-03-22 | Plasma ashing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02125330U true JPH02125330U (en) | 1990-10-16 |
| JPH0737314Y2 JPH0737314Y2 (en) | 1995-08-23 |
Family
ID=31536447
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989033078U Expired - Lifetime JPH0737314Y2 (en) | 1989-03-22 | 1989-03-22 | Plasma ashing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0737314Y2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02188916A (en) * | 1989-01-17 | 1990-07-25 | Dainippon Screen Mfg Co Ltd | Dry-type surface treatment apparatus |
-
1989
- 1989-03-22 JP JP1989033078U patent/JPH0737314Y2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02188916A (en) * | 1989-01-17 | 1990-07-25 | Dainippon Screen Mfg Co Ltd | Dry-type surface treatment apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0737314Y2 (en) | 1995-08-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |