JPH021111B2 - - Google Patents

Info

Publication number
JPH021111B2
JPH021111B2 JP60027125A JP2712585A JPH021111B2 JP H021111 B2 JPH021111 B2 JP H021111B2 JP 60027125 A JP60027125 A JP 60027125A JP 2712585 A JP2712585 A JP 2712585A JP H021111 B2 JPH021111 B2 JP H021111B2
Authority
JP
Japan
Prior art keywords
less
dielectric constant
sintered body
cao
ceramic sintered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60027125A
Other languages
Japanese (ja)
Other versions
JPS61186261A (en
Inventor
Takashi Kato
Migiwa Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Niterra Co Ltd
Original Assignee
NGK Spark Plug Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Spark Plug Co Ltd filed Critical NGK Spark Plug Co Ltd
Priority to JP60027125A priority Critical patent/JPS61186261A/en
Publication of JPS61186261A publication Critical patent/JPS61186261A/en
Publication of JPH021111B2 publication Critical patent/JPH021111B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass

Landscapes

  • Compositions Of Oxide Ceramics (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

「産業上の利用分野」 本発明は、セラミツクス焼結体に係り、ICパ
ツケージ、ハイブリツド基板、多層配線基板、厚
膜配線基板等の電気絶縁材料として好適に利用さ
れるものである。 「従来の技術」 この種電気絶縁材料としては、絶縁性、耐熱
性、機械的強度等諸特性に優れたアルミナが汎用
されており、その他にはムライト、ジルコン及び
マグネシアとCaO、BaO及びSrOの群中の少なく
とも1種類の酸化物とを含む調合物を焼成してな
る特願昭58−204871号公報記載のセラミツク組成
物、低誘電率ガラス及び耐熱性フイラー粉末を所
定比で混合してなる特開昭58−151345号公報記載
の高周波厚膜回路用低誘電率ガラス組成物などが
提案されている。 「発明が解決しようとする問題点」 アルミナ及び特開昭58−204871号公報記載のセ
ラミツク組成物は、焼結温度が1300〜1600℃の高
温であるために電気抵抗の高いW、Mo、Mn等
の高融点金属を導体材料として使用しなければな
らず、エレクトロニクス分野におけるLSIの高速
化、高密度化の傾向に不適である。加えてアルミ
ナの場合は誘電率が高いため、信号伝播遅延を生
じる。また、特開昭58−151345号公報記載の高周
波厚膜回路用低誘電率ガラス組成物は機械的強度
に劣るほか、アルカリ成分を含有するため電気的
性質にも劣る。 本発明は上記問題点を解決し、低誘電率、易焼
結性、抗折強度1000Kg/cm2以上のセラミツクス焼
結体を提供することを目的とする。 「問題点を解決するための手段」 第一の手段は重量基準でSiO228〜55%、
CaO10〜30%、B2O35〜15%及びAl2O35〜18%よ
りなる組成を適用することである。 また、上記特定手段と関連する同様に第二の手
段は上記組成に所望によりMgO5%以下、
TiO210%以下及びZnO20%以下より選ばれる一
種以上を添加してなる組成を適用することであ
る。 「作用」 第一の手段により (イ) 焼結温度が1000℃以下となり、 (ロ) 抗折強度が1000Kg/cm2以上となり、 (ハ) 誘電率(1MHz)が8以下となり、 (ニ) 熱膨張係数が8×10-6/℃以下(20〜700℃) となる。 各成分の含有量が第一の手段の上限を越えると
SiO2超過の場合は(ニ)、CaO超過の場合は(ハ)及び
(ニ)、B2O3超過の場合は(ロ)、Al2O3超過の場合は(イ)
の作用をそれぞれ発揮しなくなり、他方各成分の
含有量が第一の手段の下限に満たないと、SiO2
不足の場合は(イ)及び(ロ)、CaO不足の場合は(ロ)、
B2O3不足の場合は(イ)、Al2O3不足の場合は(ニ)の作
用をそれぞれ発揮しなくなる。 第二の手段においてMgOは焼結体の反り、変
形等を防止するが、その添加量が上限を超えると
(イ)及び(ニ)の作用を妨げる。TiO2は(イ)及び(ロ)の作
用を助長するがその添加量が上限を超えると(ハ)の
作用を妨げる。ZnOは(イ)の作用を助長するがその
添加量が上限を超えると(ロ)の作用を妨げる。 実施例 試薬一級無水ケイ酸、同炭酸カルシウム、同マ
グネシア、同二酸化チタン、同酸化亜鉛、ホウ酸
カルシウム(富田製薬)及びアルミナ(住友アル
ミニウム製錬A−HPS30)を焼成後に酸化物に
換算して表に示す組成となるように配合し、これ
に有機質結合剤及び水を加えて湿式混合し噴霧乾
燥し造粒し成形後、表に示す焼結温度で焼成する
ことによつて、大きさ50φ×3〔mm〕及び10×35
×3〔mm〕で表に示す組成1〜24のセラミツクス
焼結体を製造した。前者の大きさを有するセラミ
ツクス焼結体について誘電率を、後者の大きさを
有するセラミツクス焼結体について抗折強度及び
20〜700℃の温度範囲での熱膨張係数をそれぞれ
測定した結果を表に記載する。
"Industrial Application Field" The present invention relates to a ceramic sintered body, which is suitably used as an electrically insulating material for IC packages, hybrid boards, multilayer wiring boards, thick film wiring boards, and the like. ``Prior art'' Alumina, which has excellent properties such as insulation, heat resistance, and mechanical strength, is widely used as this type of electrical insulating material, and other materials include mullite, zircon, magnesia, CaO, BaO, and SrO. A ceramic composition described in Japanese Patent Application No. 58-204871 obtained by firing a composition containing at least one type of oxide in the group, a low dielectric constant glass, and a heat-resistant filler powder mixed in a predetermined ratio. A low dielectric constant glass composition for high frequency thick film circuits, etc., described in JP-A-58-151345, have been proposed. "Problems to be Solved by the Invention" Alumina and the ceramic composition described in JP-A-58-204871 are sintered at a high temperature of 1300 to 1600°C, so W, Mo, and Mn have high electrical resistance. It is necessary to use high melting point metals such as metals as conductor materials, which is unsuitable for the trend toward higher speed and higher density LSI in the electronics field. In addition, alumina has a high dielectric constant, which causes signal propagation delays. Furthermore, the low dielectric constant glass composition for high frequency thick film circuits described in JP-A-58-151345 has poor mechanical strength and also poor electrical properties because it contains an alkali component. The object of the present invention is to solve the above-mentioned problems and provide a ceramic sintered body having a low dielectric constant, easy sinterability, and a bending strength of 1000 Kg/cm 2 or more. "Means to solve the problem" The first method is SiO 2 28-55% by weight,
A composition consisting of 10-30 % CaO, 5-15% B2O3 and 5-18% Al2O3 is applied. Similarly, the second means related to the above specifying means is to add 5% MgO or less to the above composition as desired.
The purpose is to apply a composition in which one or more selected from TiO 2 10% or less and ZnO 20% or less are added. "Effect" By the first means, (a) the sintering temperature becomes 1000℃ or less, (b) the bending strength becomes 1000Kg/cm 2 or more, (c) the dielectric constant (1MHz) becomes 8 or less, and (d) The coefficient of thermal expansion is 8×10 -6 /°C or less (20 to 700°C). If the content of each component exceeds the upper limit of the first means
If SiO2 is exceeded, (d), if CaO is exceeded, (c) and
(d), if it exceeds B 2 O 3 (b), if it exceeds Al 2 O 3 (b)
On the other hand, if the content of each component is less than the lower limit of the first method, SiO 2
In case of deficiency, (a) and (b), in case of CaO deficiency, (b),
In the case of B 2 O 3 deficiency, the effect of (a) will not be exhibited, and in the case of Al 2 O 3 deficiency, the effect of (d) will not be exhibited. In the second method, MgO prevents warping and deformation of the sintered body, but if the amount added exceeds the upper limit,
Preventing the effects of (a) and (d). TiO 2 promotes the effects of (a) and (b), but if the amount added exceeds the upper limit, it hinders the effect of (c). ZnO promotes the effect of (a), but if the amount added exceeds the upper limit, it hinders the effect of (b). Example Reagents primary silicic anhydride, calcium carbonate, magnesia, titanium dioxide, zinc oxide, calcium borate (Tomita Pharmaceutical), and alumina (Sumitomo Aluminum Smelting A-HPS30) were converted into oxides after firing. Blend to have the composition shown in the table, add an organic binder and water, wet mix, spray dry, granulate, mold, and then sinter at the sintering temperature shown in the table to make a size 50φ. ×3 [mm] and 10×35
Ceramic sintered bodies having compositions 1 to 24 shown in the table were manufactured with a size of ×3 [mm]. The dielectric constant of the ceramic sintered body having the former size, and the bending strength and the ceramic sintered body of the latter size.
The results of measuring the thermal expansion coefficients in the temperature range of 20 to 700°C are shown in the table.

【表】【table】

【表】 「発明の効果」 易焼結性であるため、Au、Ag、Cu等の低抵抗
材料と同時焼成が可能となり、従つてこれらの金
属を導体材料に用いることができ、配線の高密度
化に寄与する。低誘電率であるため信号伝播速度
が向上する。熱膨張係数が半導体シリコンチツプ
のそれに近いため、半導体シリコンチツプとの密
着性が良くなる。
[Table] "Effects of the Invention" Because it is easy to sinter, it is possible to sinter simultaneously with low-resistance materials such as Au, Ag, and Cu. Therefore, these metals can be used as conductor materials, and high-performance wiring can be achieved. Contributes to density. The low dielectric constant improves signal propagation speed. Since the coefficient of thermal expansion is close to that of a semiconductor silicon chip, the adhesiveness with the semiconductor silicon chip is improved.

Claims (1)

【特許請求の範囲】 1 重量基準でSiO228〜55%、CaO10〜30%、
B2O35〜15%及びAl2O35〜18%よりなるセラミツ
クス焼結体。 2 重量基準でSiO228〜55%、CaO10〜30%、
B2O35〜15%及びAl2O35〜18%を必須成分とし、
該必須成分にMgO5%以下、TiO210%以下及び
ZnO20%以下より選ばれる一種以上を添加してな
るセラミツクス焼結体。
[Claims] 1. SiO 2 28-55%, CaO 10-30%, by weight;
A ceramic sintered body consisting of 5-15% B2O3 and 5-18% Al2O3 . 2 SiO 2 28-55%, CaO 10-30% by weight,
B 2 O 3 5-15% and Al 2 O 3 5-18% are essential components,
The essential components include MgO 5% or less, TiO 2 10% or less, and
A ceramic sintered body made by adding one or more types of ZnO selected from 20% or less.
JP60027125A 1985-02-14 1985-02-14 Ceramic sintered body Granted JPS61186261A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60027125A JPS61186261A (en) 1985-02-14 1985-02-14 Ceramic sintered body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60027125A JPS61186261A (en) 1985-02-14 1985-02-14 Ceramic sintered body

Publications (2)

Publication Number Publication Date
JPS61186261A JPS61186261A (en) 1986-08-19
JPH021111B2 true JPH021111B2 (en) 1990-01-10

Family

ID=12212336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60027125A Granted JPS61186261A (en) 1985-02-14 1985-02-14 Ceramic sintered body

Country Status (1)

Country Link
JP (1) JPS61186261A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61286263A (en) * 1985-06-14 1986-12-16 日本特殊陶業株式会社 Low temperature sintering ceramic composition

Also Published As

Publication number Publication date
JPS61186261A (en) 1986-08-19

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