JPS62137897A - Insulating layer compound - Google Patents

Insulating layer compound

Info

Publication number
JPS62137897A
JPS62137897A JP60277944A JP27794485A JPS62137897A JP S62137897 A JPS62137897 A JP S62137897A JP 60277944 A JP60277944 A JP 60277944A JP 27794485 A JP27794485 A JP 27794485A JP S62137897 A JPS62137897 A JP S62137897A
Authority
JP
Japan
Prior art keywords
composition
insulating layer
glass
weight
oxidizing agent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60277944A
Other languages
Japanese (ja)
Other versions
JPH0740633B2 (en
Inventor
次郎 千葉
中山 隆広
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP60277944A priority Critical patent/JPH0740633B2/en
Publication of JPS62137897A publication Critical patent/JPS62137897A/en
Publication of JPH0740633B2 publication Critical patent/JPH0740633B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、絶縁層用組成物に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a composition for an insulating layer.

[従来の技術] 厚膜法により基板上に導体を形成し、該導体上に絶縁層
を形成し、更に絶縁層上に導体を形成する電子部品が知
られている。かかる導体は銅ペース) 、 Ag−Pd
ペーストを印刷し焼成することによって形成される。銅
導体はAg−Pd導体と比へると抵抗値及び電気的マイ
グレーションが小さいこと、はんだ付けにより侵食され
難いこと等の利点がある。しかし銅は酸化され易くそれ
を防ぐため、導体を形成するための焼成は、酸素濃度1
0ppm以rの窒素雰囲気中で行なわれている。同様の
目的で銅導体上に形成する絶縁層の焼成も銅程度の雰囲
気で行なわれる。
[Prior Art] Electronic components are known in which a conductor is formed on a substrate by a thick film method, an insulating layer is formed on the conductor, and a conductor is further formed on the insulating layer. Such conductors are copper paste), Ag-Pd
It is formed by printing and firing a paste. Copper conductors have advantages over Ag--Pd conductors, such as lower resistance and electrical migration, and less resistance to corrosion by soldering. However, copper is easily oxidized, and in order to prevent this, firing to form a conductor requires an oxygen concentration of 1
The process is carried out in a nitrogen atmosphere of 0 ppm or less. For the same purpose, an insulating layer formed on a copper conductor is fired in an atmosphere similar to that of copper.

しかしながら、従来の絶縁層用の組成物をかかる雰囲気
中で焼成すると、組成物中の有機バインダーの除去が不
十分で発泡したり黒化したりし絶縁破壊電圧が低いとい
う難点があった。
However, when a conventional composition for an insulating layer is fired in such an atmosphere, the organic binder in the composition is not sufficiently removed, resulting in foaming or blackening, and the dielectric breakdown voltage is low.

し発明の解決しようとする問題点] 本発明は、上記低酸素濃度の雰囲気で焼成し上記難点を
生じることのない絶縁層用組成物の提供を目的とする。
Problems to be Solved by the Invention] An object of the present invention is to provide a composition for an insulating layer that can be fired in an atmosphere with a low oxygen concentration without causing the above-mentioned problems.

[問題点を解決するための手段] 本発明はSiO2−Al2O3−B2O2系のガラス粉
末60〜95重量%とアルミナ等の耐火物フィラー5〜
40重量%とからなるガラスセラミック組成物に有機バ
インダーを添加してなる組成物において、焼成によって
該有機バインダーを酸化する醇化剤を該組成物に添加し
た非酸化性雰囲気で焼成し絶縁層を形成する絶縁層用組
成物を提供する。
[Means for solving the problems] The present invention comprises SiO2-Al2O3-B2O2 glass powder in an amount of 60 to 95% by weight and a refractory filler such as alumina in an amount of 5 to 95% by weight.
In a composition formed by adding an organic binder to a glass-ceramic composition consisting of 40% by weight, an insulating layer is formed by firing in a non-oxidizing atmosphere in which a softening agent that oxidizes the organic binder is added to the composition. Provided is a composition for an insulating layer.

本発明において添加する酸化剤は酸素濃度約10ppm
以下の非酸化性雰囲気で焼成し絶縁層を形成する際組成
物中の有機バ・イングーを醇化除去する作用があれば特
に限定されない。中でも取扱、入手が容易であることが
らMI+02 、TiO;+ 。
The oxidizing agent added in the present invention has an oxygen concentration of about 10 ppm.
There is no particular limitation as long as it has the effect of simmering and removing the organic rubber in the composition when it is fired in the following non-oxidizing atmosphere to form the insulating layer. Among them, MI+02 and TiO;+ are easy to handle and obtain.

CeO2、V2O5、CrzOa 、CO2O3、MO
O3、及びWO:+が特に望ましい。かかる酸化剤は単
独で使用してもよく、2挿置」二91用してもよい。
CeO2, V2O5, CrzOa, CO2O3, MO
O3 and WO:+ are particularly desirable. Such oxidizing agents may be used alone or in combination.

かかる酸化剤の添加量は、ガラス粉末及び耐火物フィラ
ーの総縫であるガラス組成物に対し重量で0.05〜5
%添加するのが好ましい。醇化剤の添加量が0.05%
未満では添加による効果が少なく、他方5%を越えると
絶縁層が緻密にならず、耐電圧特性が低下するので好ま
しくない、酸化剤の添加量は上記範囲中0.01〜3%
の範囲がより望ましい。
The amount of the oxidizing agent added is 0.05 to 5 by weight to the glass composition which is a total stitch of glass powder and refractory filler.
It is preferable to add %. Addition amount of softening agent is 0.05%
If it is less than 5%, the effect of the addition will be small, and if it exceeds 5%, the insulating layer will not become dense and the withstand voltage characteristics will decrease, which is undesirable.
is more desirable.

本発明によるガラス粉末としては銅導体との反応を抑制
するため一部結晶化する特性を有するSiO,+−A1
2fh−BzCL+系のものが好ましい。
The glass powder according to the present invention is SiO, +-A1, which has the property of partially crystallizing to suppress the reaction with copper conductors.
2fh-BzCL+ type is preferred.

この系のガラス粉末の含有量は60%より少ないと充分
な緻密焼結層ができず電気特性が低下し好ましくない、
一方、95%より多いと銅導体との反応性が大きくなり
、銅導体のハンダ濡れ性を損なうので好ましくない、ガ
ラス粉末は上記範囲中65〜93%の範囲が好ましい。
If the content of this type of glass powder is less than 60%, a sufficiently dense sintered layer will not be formed and the electrical properties will deteriorate, which is undesirable.
On the other hand, if the content is more than 95%, the reactivity with the copper conductor becomes large and the solder wettability of the copper conductor is impaired, which is not preferable.

一方、耐火物フィラーとしては、アルミナ(Al2O3
)、ジルD y(ZrSi04)、−1−ジェライト(
28g0・2AI203・5Si02)が単独または併
用で用いることができるが、これらのフィラーはいずれ
も銅導体との反応性が小さく且つ、ガラスとはなじみ易
く緻密な焼結層が得られ、さらに入手し易いという特徴
を持っている。
On the other hand, as a refractory filler, alumina (Al2O3
), Zir Dy (ZrSi04), -1-gelite (
28g0, 2AI203, 5Si02) can be used alone or in combination, but all of these fillers have low reactivity with copper conductors and are compatible with glass, resulting in a dense sintered layer. It has the characteristic of being easy.

本発明におけるガラス粉末としては、重量%表示で実質
的に 5iOz          30 〜50A1203
         12.5〜20MgO+GaO+S
rO+BaO    5 〜40PbO◆ZnOl  
〜25 8203                 1  〜
7Ti02+  Zr(b            I
   〜 7しizO+Na2O+K2O      
     0  〜 3からなる組成のものが好ましい
。その理由は次の通りである。
The glass powder in the present invention is substantially 5iOz 30 to 50A1203 in weight%.
12.5~20MgO+GaO+S
rO+BaO 5 ~40PbO◆ZnOl
~25 8203 1 ~
7Ti02+ Zr(b I
~ 7shiizO+Na2O+K2O
A composition consisting of 0 to 3 is preferable. The reason is as follows.

SiO2はガラスのネットワークホーマーであり、焼成
によって析出する主結晶(/ヘリウムアルミニウムシリ
ケート)の成分である。 SiO2が30%より少ない
とガラス軟化温度が低くなり過ぎ、銅導体との反応性が
大となり好ましくない、一方、50%より多いとガラス
が硬くなり過ぎ、緻密な焼結層が得られず好ましくない
。望ましい範囲は33〜47重量%である。
SiO2 is a glass network homer and is a component of the main crystal (/helium aluminum silicate) that is precipitated by firing. If SiO2 is less than 30%, the glass softening temperature will be too low and the reactivity with the copper conductor will be large, which is undesirable. On the other hand, if it is more than 50%, the glass will become too hard and a dense sintered layer cannot be obtained, which is not preferable. do not have. The preferred range is 33-47% by weight.

Al2O3は、析出する結晶成分である。12.5%よ
り少ないと結晶化ネト分となり好ましくない、一方、2
0%を越えるとガラス溶解中に失透が生成し好ましくな
く、望ましくは14〜18%である。
Al2O3 is a crystal component that precipitates. If it is less than 12.5%, it becomes crystallized, which is undesirable.
If it exceeds 0%, devitrification will occur during glass melting, which is undesirable, and it is preferably 14 to 18%.

MgO+CaO+SrO+BaC1は、結晶化調整、膨
張係数調整および溶解性調整成分で、含量として5%よ
り少ないと結晶化不I−分となり好ましくない。一方、
40%より多いと熱膨張係数が犬きくなり過ぎ好ましく
な い。望ましくは8〜38%である。
MgO+CaO+SrO+BaCl is a component for crystallization adjustment, expansion coefficient adjustment, and solubility adjustment, and if the content is less than 5%, it becomes a crystallized inorganic component, which is not preferable. on the other hand,
If it exceeds 40%, the coefficient of thermal expansion becomes too steep, which is not preferable. It is preferably 8 to 38%.

PbO+ZnOはフラックス成分として用いる含量で1
%より少ないとその効果はなく好ましくない、一方、2
5%より多いとガラス軟化温度が低くなり過ぎ好ましく
ない。望ましくは2〜23%である。
The content of PbO + ZnO used as a flux component is 1
If it is less than 2%, there is no effect and it is not preferable.
If it is more than 5%, the glass softening temperature becomes too low, which is not preferable. It is preferably 2 to 23%.

B203はフラックス成分として用いるが、1%より少
ないと効果がない、7%より多いと有機バインダーと反
応し、ガラスが一部還元され、電気特性が低下するため
好ましくない、望ましくは2〜5%である。
B203 is used as a flux component, but if it is less than 1%, it is ineffective, and if it is more than 7%, it reacts with the organic binder, partially reducing the glass, and lowering the electrical properties, so it is not preferable, preferably 2 to 5%. It is.

T i02 +ZrO2は結晶化調整剤として用いる。Ti02+ZrO2 is used as a crystallization modifier.

1%よる少ないと効果がない。一方、7%を越えるとガ
ラスの軟化温度が高くなり過ぎ好ましくない、望ましく
は合量で2〜5%である。
Less than 1% is ineffective. On the other hand, if it exceeds 7%, the softening temperature of the glass becomes too high, which is undesirable.The total amount is preferably 2 to 5%.

Li2O+Na2O+K2Oはガラス溶解性の敗色[1
的で使用し得るが、電気的マイグレーション面より、3
%未満である。
Li2O + Na2O + K2O is a discoloration of glass melting [1
However, from the electrical migration aspect, 3
less than %.

耐火物フィラーとしては、アルミナ(A1203)、ジ
ルコ7 (ZrSiO4)、 コージェライト(28g
O・2AI203・5S i02 )を単独あるいはJ
i川で前記ガラス粉末と混合して用いる。含量で409
6を越えると、緻密な焼結層が得られず好ましくない。
As refractory fillers, alumina (A1203), Zirco 7 (ZrSiO4), cordierite (28g
O・2AI203・5S i02) alone or J
It is mixed with the glass powder and used. 409 in content
If it exceeds 6, a dense sintered layer cannot be obtained, which is not preferable.

一方、5%より少ないとガラスと銅導体の反応が大とな
り、銅導体の/\ンダ濡れが損なわれるので好ましくな
い。望ましくは7〜35重量%である。
On the other hand, if it is less than 5%, the reaction between the glass and the copper conductor becomes large, which impairs the wetting of the copper conductor, which is not preferable. It is preferably 7 to 35% by weight.

本発明において使用される有機バインダーと1しては特
に限定されず、例えばエチルセルロース、 ゛ニトロセ
ルロース、アクリル樹脂をα−テルピネオールに溶解し
たものが使用される。
The organic binder 1 used in the present invention is not particularly limited, and for example, ethyl cellulose, nitrocellulose, or acrylic resin dissolved in α-terpineol can be used.

[実施例] 目標組成となるように各原料を調合し、白金坩堝に入れ
、 1400〜1500℃で3〜4時間、加熱攪拌溶解
した0次いで、これを水砕し、更に粉砕装置により耐火
物フィラーとガラス粉末とが所定の割合になるように粉
砕兼混合した粉砕後の粉末の平均粒径はスクリーン印刷
用として用いるため。
[Example] Each raw material was mixed to have a target composition, put into a platinum crucible, heated and stirred at 1400 to 1500°C for 3 to 4 hours, and dissolved.Next, this was pulverized, and further processed into refractories using a pulverizer. The average particle size of the powder after pulverizing and mixing filler and glass powder at a predetermined ratio is used for screen printing.

1.5〜2.5μmとなるように調製した。The thickness was adjusted to 1.5 to 2.5 μm.

次いで、これらの粉末とビヒクルを混合しペースト状と
したが、ここでは一般的に用いられているエチルセルロ
ースとα−テルピネオール系のビヒクルを使用した。さ
らに、これに酸化剤を添加Lライカイ機および3本ロー
ラーにより混練しペーストを得た。耐火物フィラー、酸
化剤;ガラス粉末の組成及びこれらの混合割合を表1に
示した。
Next, these powders and a vehicle were mixed to form a paste; here, a commonly used vehicle of ethyl cellulose and α-terpineol was used. Further, an oxidizing agent was added thereto and the mixture was kneaded using an Lraikai machine and three rollers to obtain a paste. Table 1 shows the compositions of the refractory filler, oxidizing agent, and glass powder and their mixing ratios.

次いで、これらペーストを用い、200メツシュ総厚1
05μmのスクリーンを用い印刷しコンデンサパターン
により電気的絶縁特性および銅導体のハンダ濡れ性につ
いて評価した。ここで、上部および下部導体として使用
した材料は、デュポン社・コード番号9922および9
823であり、焼成は02濃度5 ppmで900°C
1O分間M行なった。絶縁層の厚みは40±2μmであ
った。表1より明らかな如く1本発明による組成物は、
電気特性に優れ、且つハンダの濡れも良好である。比較
例として本発明による組成物以外のものについても同様
のテストを行なったので、併せて表1に示す。なお、各
特性の評価方法は次のとおりであうる。
Next, using these pastes, the total thickness of 200 meshes was 1
The electrical insulation properties and the solder wettability of the copper conductor were evaluated using a capacitor pattern printed using a 0.05 μm screen. The materials used for the top and bottom conductors were DuPont code numbers 9922 and 9.
823, and the firing was performed at 900°C at a concentration of 02 of 5 ppm.
M was performed for 10 minutes. The thickness of the insulating layer was 40±2 μm. As is clear from Table 1, one composition according to the present invention is:
It has excellent electrical properties and good solder wetting. As a comparative example, similar tests were conducted on compositions other than the composition according to the present invention, which are also shown in Table 1. Note that the evaluation method for each characteristic may be as follows.

特性評価法 絶縁抵抗  タケダ理研製振動容量型散れ電流電位計に
より100ν印加時の絶縁抵抗を測定した。温度25±
1°C1湿度45±1%、絶縁層厚よ:40±2μm。
Characteristic Evaluation Method Insulation Resistance Insulation resistance was measured when 100 ν was applied using a vibrating capacitance type scattering current electrometer manufactured by Takeda Riken. Temperature 25±
1°C, humidity 45±1%, insulation layer thickness: 40±2μm.

℃、温湿度5±1%。℃, temperature and humidity 5±1%.

絶縁破壊電圧 100V如に5tep up L、各電圧で1分間保持
し、破壊電圧値を示す温度25 ±1℃、湿度45±1%。
5 step up L with dielectric breakdown voltage of 100V, hold each voltage for 1 minute, temperature 25 ± 1°C, humidity 45 ± 1% to show breakdown voltage value.

ハンダ濡れ性 タムラ化研XA−100フラックスを塗布した後、23
0±5℃のPb−3n共品ハンダバス中に5 sec 
dispL引」二げた。Cuバンド面積に対するハンダ
が 乗った面積で表示した。
After applying solder wettability Tamura Kaken XA-100 flux, 23
5 sec in Pb-3n solder bath at 0±5℃
I pulled down the display L. It is expressed as the area covered by solder relative to the Cu band area.

[発明の効果] 本発明によれば、銅の酸化を生じない酸素濃度の低い雰
囲気中で焼成し、絶縁破壊電圧、ハンダIXfれ性に優
れた絶縁層を形成することかできる。
[Effects of the Invention] According to the present invention, an insulating layer having excellent dielectric breakdown voltage and solder IX fragility can be formed by firing in an atmosphere with a low oxygen concentration that does not cause oxidation of copper.

Claims (4)

【特許請求の範囲】[Claims] (1)SiO_2−Al_2O_3−B_2O_3系の
ガラス粉末60〜95重量%とアルミナ等の耐火物フィ
ラー5〜40重量%とからなるガラスセラミック組成物
に有機バインダーを添加してなる組成物におい て、焼成によって該有機バインダーを酸化する酸化剤を
該組成物に添加した非酸化性雰囲気で焼成し絶縁層を形
成する絶縁層用組成 物。
(1) In a composition obtained by adding an organic binder to a glass-ceramic composition consisting of 60 to 95% by weight of SiO_2-Al_2O_3-B_2O_3-based glass powder and 5 to 40% by weight of a refractory filler such as alumina, A composition for an insulating layer, which is formed by firing in a non-oxidizing atmosphere in which an oxidizing agent that oxidizes the organic binder is added to the composition.
(2)前記酸化剤は、ガラスセラミック組成物に対し、
0.05〜5重量%添加されている特許請求の範囲第1
項記載の絶縁層用組成物。
(2) The oxidizing agent is applied to the glass-ceramic composition,
Claim 1 in which 0.05 to 5% by weight is added
The composition for an insulating layer as described in .
(3)前記酸化剤はMnO_2、TiO_2、CeO_
2、V_2O_5、Cr_2O_3、Co_2O_3、
MoO_3、又はWO_3から選ばれた少なくとも1者
である特許請求の範囲第1項又は第2項記載の絶縁層用
の組成物。
(3) The oxidizing agent is MnO_2, TiO_2, CeO_
2, V_2O_5, Cr_2O_3, Co_2O_3,
The composition for an insulating layer according to claim 1 or 2, which is at least one selected from MoO_3 and WO_3.
(4)前記ガラス粉末は、重量%表示で実質的にSiO
_2 30〜50 Al_2O_3 12.5〜20 MgO+CaO+SrO+BaO 5〜40PbO+Z
nO 1〜25 B_2O_3 1〜7 TiO_2+ZrO_2 1〜7 Li_2O+Na_2O+K_2O 0〜3からなる特
許請求の範囲第1項記載の絶縁層用組成物。
(4) The glass powder is substantially SiO in weight percent.
_2 30~50 Al_2O_3 12.5~20 MgO+CaO+SrO+BaO 5~40PbO+Z
The composition for an insulating layer according to claim 1, comprising: nO 1-25 B_2O_3 1-7 TiO_2+ZrO_2 1-7 Li_2O+Na_2O+K_2O 0-3.
JP60277944A 1985-12-12 1985-12-12 Insulating layer composition Expired - Fee Related JPH0740633B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60277944A JPH0740633B2 (en) 1985-12-12 1985-12-12 Insulating layer composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60277944A JPH0740633B2 (en) 1985-12-12 1985-12-12 Insulating layer composition

Publications (2)

Publication Number Publication Date
JPS62137897A true JPS62137897A (en) 1987-06-20
JPH0740633B2 JPH0740633B2 (en) 1995-05-01

Family

ID=17590450

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60277944A Expired - Fee Related JPH0740633B2 (en) 1985-12-12 1985-12-12 Insulating layer composition

Country Status (1)

Country Link
JP (1) JPH0740633B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62260733A (en) * 1986-05-02 1987-11-13 Asahi Glass Co Ltd Sealing composition
JPS6451346A (en) * 1987-08-18 1989-02-27 Asahi Glass Co Ltd Glass ceramic composition
JPS6456340A (en) * 1987-08-27 1989-03-03 Nippon Electric Glass Co Glass composition for insulating layer
JPH0288232A (en) * 1988-09-27 1990-03-28 Asahi Glass Co Ltd Low temperature sintered multilayer base and its composition
JPH02124744A (en) * 1988-11-01 1990-05-14 Asahi Glass Co Ltd Paste composition
US5763339A (en) * 1996-02-06 1998-06-09 Shoei Chemical Inc. Insulating glass composition
JP2008521200A (en) * 2004-11-23 2008-06-19 フェロ テクニーク ホールディング ビー.ヴイ. Enamel compositions for application as dielectrics and uses of such enamel compositions
EP2458603A4 (en) * 2009-07-23 2014-09-10 Nippon Electric Glass Co Glass film for capacitor
EP1831120B1 (en) * 2004-11-23 2015-08-19 Ferro Techniek Holding B.V. Enamel composition, assembly and use thereof on a substrate surface

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6185709A (en) * 1984-10-03 1986-05-01 株式会社フジクラ Inorganic insulated wire
JPS6278145A (en) * 1985-09-28 1987-04-10 日本碍子株式会社 Ceramic composition for electric insulator
JPS62117394A (en) * 1985-11-16 1987-05-28 株式会社住友金属セラミックス Low temperature sintered ceramics multilayer circuit substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6185709A (en) * 1984-10-03 1986-05-01 株式会社フジクラ Inorganic insulated wire
JPS6278145A (en) * 1985-09-28 1987-04-10 日本碍子株式会社 Ceramic composition for electric insulator
JPS62117394A (en) * 1985-11-16 1987-05-28 株式会社住友金属セラミックス Low temperature sintered ceramics multilayer circuit substrate

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62260733A (en) * 1986-05-02 1987-11-13 Asahi Glass Co Ltd Sealing composition
JPS6451346A (en) * 1987-08-18 1989-02-27 Asahi Glass Co Ltd Glass ceramic composition
JPS6456340A (en) * 1987-08-27 1989-03-03 Nippon Electric Glass Co Glass composition for insulating layer
JPH0288232A (en) * 1988-09-27 1990-03-28 Asahi Glass Co Ltd Low temperature sintered multilayer base and its composition
JPH02124744A (en) * 1988-11-01 1990-05-14 Asahi Glass Co Ltd Paste composition
US5763339A (en) * 1996-02-06 1998-06-09 Shoei Chemical Inc. Insulating glass composition
JP2008521200A (en) * 2004-11-23 2008-06-19 フェロ テクニーク ホールディング ビー.ヴイ. Enamel compositions for application as dielectrics and uses of such enamel compositions
EP1831120B1 (en) * 2004-11-23 2015-08-19 Ferro Techniek Holding B.V. Enamel composition, assembly and use thereof on a substrate surface
EP2458603A4 (en) * 2009-07-23 2014-09-10 Nippon Electric Glass Co Glass film for capacitor

Also Published As

Publication number Publication date
JPH0740633B2 (en) 1995-05-01

Similar Documents

Publication Publication Date Title
JP4839539B2 (en) Lead-free glass, glass frit, glass paste, electronic circuit components and electronic circuits
US4152282A (en) Silk-screening dielectric paste for multilayer circuit fabrication comprising aluminum oxide and a borosilicate glass
JPS6027123B2 (en) Composition for metallization
JP2005525287A (en) Electronic devices coated with lead and cadmium free electronics overglaze
EP0219807A2 (en) Low temperature fired ceramics
JPS62137897A (en) Insulating layer compound
JPWO2001090012A1 (en) Glass composition and glass-forming material containing the composition
JP2713376B2 (en) Glass composition for insulating layer
JPS6210940B2 (en)
JPH06247742A (en) Electronic parts
JPH0452561B2 (en)
JPS6054721B2 (en) Paste composition for forming insulators
JPH06239646A (en) Coating glass composition and paste prepared by using the same
JP2510136B2 (en) Glass composition for insulating layer
JP3153690B2 (en) Glazed ceramic substrate
JPH03131545A (en) Resistor paste and ceramics substrate
JPH02212336A (en) Glass-ceramic composition and its use
JPS623039A (en) Material for insulation layer
JPH0312357A (en) Low temperature burned ceramic substrate material
JPH03183640A (en) Resistor paste and ceramic substrate
JPS6231903A (en) Material for insulation layer
JPH02288203A (en) Resistor paste and ceramic substrate
JPH053423B2 (en)
JPH05129739A (en) Glass paste
JPS5988337A (en) Glaze composition for ceramic substrate

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees