JPH02102730U - - Google Patents
Info
- Publication number
- JPH02102730U JPH02102730U JP1160289U JP1160289U JPH02102730U JP H02102730 U JPH02102730 U JP H02102730U JP 1160289 U JP1160289 U JP 1160289U JP 1160289 U JP1160289 U JP 1160289U JP H02102730 U JPH02102730 U JP H02102730U
- Authority
- JP
- Japan
- Prior art keywords
- silicon chip
- length
- island
- silicon
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Die Bonding (AREA)
Description
第１図はこの考案の一実施例による半導体装置
を示す断面図、第２図は従来の半導体装置を示す
断面図である。
図において、１は樹脂、２はシリコンチツプ、
３はアイランドである。なお、図中、同一符号は
同一、又は相当部分を示す。
FIG. 1 is a sectional view showing a semiconductor device according to an embodiment of this invention, and FIG. 2 is a sectional view showing a conventional semiconductor device. In the figure, 1 is resin, 2 is silicon chip,
3 is an island. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
その後樹脂成形されている半導体装置において、
アイランドの長さを、シリコンチツプ端部に加わ
る主応力、せん断応力、シリコンチツプ近傍の樹
脂に加わる主応力、せん断応力を低く抑え、シリ
コンチツプ端部の損傷を抑えるために、従来シリ
コンチツプより長目であつたアイランドの長さを
シリコンチツプの長さより短くすることを特徴と
する半導体装置。 A silicon chip is mounted on the island,
In semiconductor devices that are subsequently molded with resin,
The length of the island is longer than that of conventional silicon chips in order to keep the principal stress and shear stress applied to the silicon chip edges low, the principal stress and shear stress applied to the resin near the silicon chips, and to prevent damage to the silicon chip edges. A semiconductor device characterized in that the length of the exposed island is shorter than the length of a silicon chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1160289U JPH02102730U (en) | 1989-02-01 | 1989-02-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1160289U JPH02102730U (en) | 1989-02-01 | 1989-02-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02102730U true JPH02102730U (en) | 1990-08-15 |
Family
ID=31220300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1160289U Pending JPH02102730U (en) | 1989-02-01 | 1989-02-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02102730U (en) |
-
1989
- 1989-02-01 JP JP1160289U patent/JPH02102730U/ja active Pending