JPH0195524A - Taper etching of chromium film - Google Patents
Taper etching of chromium filmInfo
- Publication number
- JPH0195524A JPH0195524A JP25342387A JP25342387A JPH0195524A JP H0195524 A JPH0195524 A JP H0195524A JP 25342387 A JP25342387 A JP 25342387A JP 25342387 A JP25342387 A JP 25342387A JP H0195524 A JPH0195524 A JP H0195524A
- Authority
- JP
- Japan
- Prior art keywords
- film
- chromium
- chromium film
- aluminum
- phosphoric acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 229910052804 chromium Inorganic materials 0.000 title claims abstract description 51
- 239000011651 chromium Substances 0.000 title claims abstract description 51
- 238000005530 etching Methods 0.000 title claims abstract description 24
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 28
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract 6
- 239000002184 metal Substances 0.000 claims abstract 6
- 229910000838 Al alloy Inorganic materials 0.000 claims description 19
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 19
- 239000007788 liquid Substances 0.000 description 5
- 150000001844 chromium Chemical class 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 2
- 206010011732 Cyst Diseases 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 208000031513 cyst Diseases 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、クロム膜のパターン形成方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for forming a pattern on a chromium film.
第３図は１例えば、特開昭５８−１１１３６６号公報に
示された従来のクロム膜のテーパーエツチング方法の各
段階での状態を示す断面図であり１図におりて、【１）
は基板％（２）は基板（１）上に形成されたクロム膜、
（４）はクロム膜（２）上に形成されｔレジスト膜であ
る。FIG. 3 is a cross-sectional view showing the state at each stage of the conventional taper etching method for a chromium film disclosed in, for example, Japanese Unexamined Patent Publication No. 58-111366.
is the substrate% (2) is the chromium film formed on the substrate (1),
(4) is a t-resist film formed on the chromium film (2).
次に、この従来方法におけるテーパーエツチング方法に
ついて説明する。まず、第３図（ａｌに示すように、基
板（１）上に図示を省略し几レジストパターンを用いて
、所望のパターンにクロム膜（２）を形成する。次に、
第３図１ｂ＋に示すように、このクロム膜（２）上にこ
のクロム膜（２）のパターンよシも小さなパターンとな
るように、改めて、レジスト膜（４）を形成する。そし
て、この状態でクロムエツチング液に接触させ、クロム
［１２） ｉエツチングする。Next, the taper etching method in this conventional method will be explained. First, as shown in FIG. 3 (al), a chromium film (2) is formed in a desired pattern on a substrate (1) using a resist pattern (not shown).Next,
As shown in FIG. 3, 1b+, a resist film (4) is again formed on this chromium film (2) so that the pattern is smaller than that of this chromium film (2). Then, in this state, it is brought into contact with a chromium etching solution to perform chromium [12)i etching.
この時、クロムｇ １２） ’ｉ完全にはエツチングせ
ず。At this time, do not completely etch the chrome.
中途段階でエツチングを終了する。これによって、第３
図（ａ）に示すように、クロム膜（２）の断面は緩やか
な形状となる。Etching is finished in the middle of the process. This allows the third
As shown in Figure (a), the cross section of the chromium film (2) has a gentle shape.
従来のクロム膜のテーパーエツチング方法は以上のよう
に構成されてお９％ レジストパターン形成が２回以上
必要であるので、Ｉｌｌココスト高く。The conventional taper etching method for a chromium film is constructed as described above and requires two or more resist pattern formations, resulting in a high cost.
又、中途段階で終了するエンチングの終点検出が困難で
あるので、テーパー形状制御が困難であるなどの問題点
があった。Furthermore, since it is difficult to detect the end point of enching that ends in the middle, there are problems such as difficulty in controlling the taper shape.
この発明は、上記のような問題点を解消するためになさ
れたもので、クロム膜の断面形状を制御よくテーバ−状
に形成できるテーパーエツチング方法を得ること全目的
とする。The present invention has been made to solve the above-mentioned problems, and its entire purpose is to provide a taper etching method that allows the cross-sectional shape of a chromium film to be formed into a tapered shape with good control.
この発明に係るクロム膜テーパーエンチング方法ｄ、ク
ロム膜上にアルミニワムを友はアルば二ワム合金の膜を
設け、このアルミニワムま几はアルミニウム合金膜をり
ん酸を用いて所望のパターンに加工することによシ、下
地クロム膜も同時にエツチングＬ、Ｌかる後、クロムエ
ッチンク液ヲ用いてクロム残ｆを除去し、クロム膜上の
アルミニワムま友はアルば二９ム合金膜を硝酸を含んだ
りん酸を用いてエンチオフすることによシ、クロム膜の
テーパー形状を得るテーパーエツチング方法である。The chromium film taper etching method d according to the present invention is to provide an aluminum alloy film on the chromium film, and process the aluminum alloy film into a desired pattern using phosphoric acid. In particular, after etching the underlying chromium film at the same time, use a chrome etching solution to remove the chromium residue, and remove the aluminum alloy film on the chromium film without containing nitric acid. This is a taper etching method in which a tapered shape of the chromium film is obtained by etch-off using phosphoric acid.
この発明におけるクロム膜テーパーエツチング方法は％
りん酸によりアルミニワムまｔにアルばニワム合金膜と
同時にクロム膜をエツチングすると、エツチングｖ−ト
はクロム膜の方が遅いので。The chromium film taper etching method in this invention is
If a chromium film is etched with phosphoric acid at the same time as an aluminum alloy film, the chromium film will be etched more slowly.
クロム膜断面形状はテーパー状に加工される。The cross-sectional shape of the chrome film is processed into a tapered shape.
以下、この発明の一実施例を図について説明する。第１
図はこの発明の一実施例ｖＣよるクロム膜テーパーエン
チング方法の各段階での状態を示す断面図である。（１
） ｒ１基板で例えばシリコン基板。An embodiment of the present invention will be described below with reference to the drawings. 1st
The figures are cross-sectional views showing various stages of a chromium film taper etching method according to an embodiment vC of the present invention. (1
) The r1 substrate is, for example, a silicon substrate.
（２）はシリコン基板（１）上に形成されたクロム膜で
。(2) is a chromium film formed on a silicon substrate (1).
例えば真空蒸着法によシ厚さ１００〜５０００Ａとなる
ように形成されたクロム膜、（３）はクロム膜１２１上
に形成されたアルｔニワムま几はアルミニウム合金膜で
１例えば真空蒸着法により厚さ１００〜２００００Ａと
なるように形成されたアルば二９ム、またはアルばニウ
ム合金膜、（４）はアルゼニワムまたはアルミニウム合
金膜（３）上に所望のパターンに形成され友レジストで
例えば、フォトレジスト０ＦＰＲ−８００（東京応化社
製）である。For example, (3) is an aluminum alloy film formed on the chromium film 121, and (3) is an aluminum alloy film formed on the chromium film 121. An aluminum or aluminum alloy film (4) formed to a thickness of 100 to 20,000 A is formed in a desired pattern on the aluminum or aluminum alloy film (3) and is coated with a resist, for example, The photoresist is 0FPR-800 (manufactured by Tokyo Ohka Co., Ltd.).
次に、この実施例のクロム膜のテーパーエツチング方法
を図について説明する。シリコン基板（１）上にクロム
膜＋２） ｔ−形成し、このクロム膜（２）上にアルミ
ニワムまたはアルミニウム合金膜（３）を形成し。Next, a method of taper etching a chromium film according to this embodiment will be explained with reference to the drawings. A chromium film (+2) is formed on a silicon substrate (1), and an aluminum or aluminum alloy film (3) is formed on this chromium film (2).
このアルミニワムまたはアルミニウム合金膜（３）上ニ
所望のパターンに７オトレジスト０ＦＰＲ−８００膜（
４）を形成し、（第１図（ａ））、りん酸（例えば、濃
りん酸４５℃）によりアルは二９ムまたはアルばニワム
合金膜（３）をエツチングする。この時、クロム膜区２
）も同時にエツチングされる（１１１図（ｂ））。7 Otoresist 0FPR-800 films are applied to the desired pattern on this aluminum or aluminum alloy film (3)
4), and then etching the aluminum or aluminum alloy film (3) with phosphoric acid (for example, concentrated phosphoric acid at 45° C.) (FIG. 1(a)). At this time, chrome film area 2
) is also etched at the same time (Fig. 111(b)).
第２図に２層膜のエツチングｖ−トと液温の関係をグラ
フにて示す。クロム膜（２）はアルミニワムま′ 九は
アルば二９ム合金膜電３）よりもエツチングＶ −トが
遅−ので、クロム膜（２）の断面はテーノく一状に形成
される。この状態では、クロム膜（２）の残渣を用いて
除去しく第１図１ｃ） ） 、その後、フォトレジスト
０ＦＰＲ−８００膜（４） ｆｔ例えばレジストアンシ
ャーを用いて除去後、硝酸を含んだりん酸（例えＩｆ、
Ｄん酸：硝酸−２０：ｌ 容量比、４５℃）を用イテ
アルミニワムまたはアルば二９ム合金ＦＩＭ （３）
を除去シテーパーエッチングされ九クロム膜（２）のパ
ターンを得る（第１図１ｄｌ ３０
なお、上記実施例では、基板（１）にシリコン基板を用
−九が、ガラス基板等地の材質の基板でも良く、クロム
膜（２）に真空蒸着法を用いて形成したクロム膜を用い
九が、スパンタ法、めっき法等、他の膜形成方法により
形成さｎたクロム膜でも良い。FIG. 2 is a graph showing the relationship between the etching temperature of a two-layer film and the liquid temperature. Since the chromium film (2) is etched more slowly than the aluminum alloy film (3), the cross section of the chromium film (2) is formed into a square shape. In this state, the residue of the chromium film (2) should be removed (Fig. 1c)), and then the photoresist 0FPR-800 film (4) ft should be removed using, for example, a resist unsher. Acids (e.g. If,
D phosphoric acid:nitric acid -20:l volume ratio, 45℃) was used to prepare Italuminum or Aluminum alloy FIM (3)
30 In the above embodiment, a silicon substrate is used as the substrate (1). Alternatively, the chromium film (2) may be a chromium film formed using a vacuum evaporation method, but it may also be a chromium film formed by another film forming method such as a spunter method or a plating method.
アルイニワムまたはアルずニワム合金膜（３）に真空蒸
着法を用−て形成し友ものを用ｖｈ友が、スパッタ法等
、他の膜形成方法により形成し之アルミニウムまたはア
ルばニワム合金膜でも良い。Ｖシスト膜（４）にフォト
レジスト０ＦＰＲ−８００（東京応化社製）を用い九が
、他のレジストでも良い。クロエンチンダ液でも艮＜、
レジスト除去にレジストアンシャーを用−たが、他のレ
ジスト除去法でも良い。又、アルミニウムま九はアルミ
ニウム合金膜１３）とクロム膜（２）のエツチングに濃
りん酸４５℃を用いたが、他の濃度・液温に設定しても
良い。An aluminum or aluminum alloy film (3) formed using a vacuum evaporation method may be used, but an aluminum or aluminum alloy film may be formed using another film forming method such as a sputtering method. . Although photoresist 0FPR-800 (manufactured by Tokyo Ohka Co., Ltd.) is used for the V cyst film (4), other resists may be used. Cloentinda liquid is also available.
Although resist unsher was used to remove the resist, other resist removal methods may be used. Furthermore, although concentrated phosphoric acid at 45° C. was used for etching the aluminum alloy film 13) and the chromium film (2), other concentrations and liquid temperatures may be used.
以上のように、この発明によれば、クロム膜上にアルミ
ニウムまたはアルミニウム合金膜を形成し、この２層膜
ｔ−ｐん酸によりエッチングシ、両層膜のエツチングレ
ートの差に工って、クロム膜断面形状をテーパー状に形
成出来る工うに構成したので、テーパー形状が安価に形
成出来、また、精度の高いものが得られる効果がある。As described above, according to the present invention, an aluminum or aluminum alloy film is formed on a chromium film, and this two-layer film is etched with t-p phosphoric acid. Since the cross-sectional shape of the chromium film is configured to be tapered, the tapered shape can be formed at a low cost, and a highly accurate product can be obtained.
第１図はこの発明の一実施例によるテーパーエツチング
方法の各段階での状態を示す断面図、第２図はこの実施
例における濃りん酸による膜エツチングレートと液温と
の関係を示すグラフ、第３図は従来のテーパーエツチン
グ方法の各段階での状態を示す断面図である。
図にお−て、 （１）は基板、区２１はクロム膜、（２
１Ｌ）はクロム膜の残液、（３）はアルば二９ムま比は
アルミニウム合金の膜、（４］ニレジスト膜である。
なお１図中同一符号は同一１又は相当部分を示す０FIG. 1 is a sectional view showing the state at each stage of the taper etching method according to an embodiment of the present invention, and FIG. 2 is a graph showing the relationship between the film etching rate and liquid temperature using concentrated phosphoric acid in this embodiment. FIG. 3 is a cross-sectional view showing various stages of a conventional taper etching method. In the figure, (1) is the substrate, area 21 is the chromium film, (2
1L) is the residual liquid of the chromium film, (3) is the aluminum alloy film, and (4) is the Niresist film. Note that the same reference numerals in Figure 1 are the same 1 or 0 indicating the corresponding part.
Claims (1)
たはアルミニウム合金（以下「アルミニウム系金属」と
いう）の膜を形成し、 このアルミニウム系金属の膜の上に所望のパターンにレ
ジスト膜を形成し、 このレジスト膜をマスクとして、りん酸によつて上記ア
ルミニウム系金属の膜及びクロム膜にエッチングを施し
、 上記基板上に残る上記クロムの残渣をクロムエッチング
液でエッチング除去し、 上記レジスト膜を除去した後に、 上記アルミニウム系金属の膜を硝酸を含んだりん酸でエ
ッチング除去することを特徴とするクロム膜のテーパー
エッチング方法。(1) A film of aluminum or aluminum alloy (hereinafter referred to as "aluminum metal") is formed on the chromium film formed on the substrate, and a resist film is formed in a desired pattern on this aluminum metal film. Using this resist film as a mask, etch the aluminum-based metal film and chromium film with phosphoric acid, remove the chromium residue remaining on the substrate by etching with a chromium etching solution, and remove the resist film. After that, the aluminum-based metal film is etched away with phosphoric acid containing nitric acid.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62253423A JP2559768B2 (en) | 1987-10-07 | 1987-10-07 | Tapered etching method for chrome film |
| US07/249,905 US5007984A (en) | 1987-09-28 | 1988-09-27 | Method for etching chromium film formed on substrate |
| US07/599,782 US5183533A (en) | 1987-09-28 | 1990-10-17 | Method for etching chromium film formed on substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62253423A JP2559768B2 (en) | 1987-10-07 | 1987-10-07 | Tapered etching method for chrome film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0195524A true JPH0195524A (en) | 1989-04-13 |
| JP2559768B2 JP2559768B2 (en) | 1996-12-04 |
Family
ID=17251187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62253423A Expired - Lifetime JP2559768B2 (en) | 1987-09-28 | 1987-10-07 | Tapered etching method for chrome film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2559768B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0485930A (en) * | 1990-07-30 | 1992-03-18 | Fujitsu Ltd | Wiring pattern formation method |
| US7306772B2 (en) | 2001-05-02 | 2007-12-11 | Nissan Motor Co., Ltd. | Exhaust gas purification apparatus |
-
1987
- 1987-10-07 JP JP62253423A patent/JP2559768B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0485930A (en) * | 1990-07-30 | 1992-03-18 | Fujitsu Ltd | Wiring pattern formation method |
| US7306772B2 (en) | 2001-05-02 | 2007-12-11 | Nissan Motor Co., Ltd. | Exhaust gas purification apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2559768B2 (en) | 1996-12-04 |
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