JPH01151236A - Taper-etching of aluminum film - Google Patents
Taper-etching of aluminum filmInfo
- Publication number
- JPH01151236A JPH01151236A JP31137687A JP31137687A JPH01151236A JP H01151236 A JPH01151236 A JP H01151236A JP 31137687 A JP31137687 A JP 31137687A JP 31137687 A JP31137687 A JP 31137687A JP H01151236 A JPH01151236 A JP H01151236A
- Authority
- JP
- Japan
- Prior art keywords
- film
- etching
- resist
- taper
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 44
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 16
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 12
- 239000011733 molybdenum Substances 0.000 claims abstract description 12
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 15
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 6
- 239000007788 liquid Substances 0.000 abstract 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Manufacturing Of Printed Circuit Boards (AREA)
- Weting (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、アルミニウム膜、又はアルミニウム合金膜
のパターン形成方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for forming a pattern on an aluminum film or an aluminum alloy film.
第２図ａ −ｃは例えば特開昭１５５−８６０３８号公
報に示された従来のアルミニウムを主成分とする膜（以
下Ａｌ膜と略す）のテーパーエツチング方法全工程順に
示す断面図であり、図において、（１）は基板、（２）
は基板（１）上に形成されたＡｌ膜、（４）はＡで膜上
に所定のパターンに形成されたレジスト膜である。Figures 2a to 2c are cross-sectional views showing the entire process order of a conventional taper etching method for a film containing aluminum as a main component (hereinafter abbreviated as Al film) disclosed in, for example, Japanese Unexamined Patent Publication No. 155-86038. In, (1) is the substrate, (2)
A is an Al film formed on the substrate (1), and A is a resist film formed on the film in a predetermined pattern.
次にテーパーエツチング方法について説明する。Next, the taper etching method will be explained.
基板（１）上にＡｌ膜（２）を形成し、へｌ膜（２）上
に所定のパターンにレジスト膜（４）を形成する。この
基板をシん酸３８０ｍ１． Ｈ２ＯｘｏｍＬ硝酸６０ｍ
１を混合したエツチング液に浸漬し、ＡＪｌ［をエツチ
ングする。この時、エツチング液中の硝酸によシレジス
トを剥しながらエツチングは進行する。このため、Ａｌ
膜パターンは緩やかな断面形状となる０
〔発明が解決しようとする問題点〕
従来のＡｌ膜のテーパーエツチング方法は以上のように
構成されているので、エツチング液中の硝酸濃度を高精
度に制御しなければならず、またレジストパターン形成
も余裕度の少ない条件で行うことが必要で、また得られ
るＡｌ膜のテーパー角が不安定であるなどの問題点があ
った０
この発明はと記のような問題点を解消するためになされ
たもので、余裕度の大きい条件でエツチングできるとと
もに、安定したＡｌ膜のテーパー角を得ることができる
テーパーエツチング方法を得ることを目的とする。An Al film (2) is formed on the substrate (1), and a resist film (4) is formed in a predetermined pattern on the Al film (2). This substrate was mixed with 380ml of phosphoric acid. H2OxomL nitric acid 60m
1 and etched it by immersing it in an etching solution mixed with AJ1. At this time, etching progresses while the resist is removed by nitric acid in the etching solution. For this reason, Al
The film pattern has a gentle cross-sectional shape. [Problems to be solved by the invention] Since the conventional taper etching method for an Al film is configured as described above, the nitric acid concentration in the etching solution can be controlled with high precision. In addition, resist pattern formation had to be carried out under conditions with little margin, and there were other problems such as the taper angle of the resulting Al film being unstable. This method was developed to solve the above problems, and the object of the present invention is to provide a taper etching method that allows etching to be performed under conditions with a large degree of margin, and also allows a stable taper angle of the Al film to be obtained.
この発明に係るＡｌ膜のテーパーエツチング方法は、ア
ルミニウムを主成分とする膜上にモリブデン膜を形成す
る工程、上記モリブデン膜上にレジスト膜を形成する工
程、および少なくともりん酸を含むエツチング液により
上記モリブデン膜およびアルミニウム膜をエツチングす
る工程を順に施すものである。The taper etching method for an Al film according to the present invention includes a step of forming a molybdenum film on a film containing aluminum as a main component, a step of forming a resist film on the molybdenum film, and a step of etching the film using an etching solution containing at least phosphoric acid. The steps of etching the molybdenum film and the aluminum film are sequentially performed.
この発明におけるモリブデン膜（以下Ｍｏ膜と略す）と
Ａｌ膜はエツチング液により同時にエツチングされ、Ａ
ｌ膜はＭｏ膜をレジストとしてエツチングされる。この
時、Ｍｏ膜はＡｌ膜よりもエツチングレートが高いため
、Ａｅ膜パターンの断面形状は緩やかなテーパー形状と
なる０
〔実施例〕
以下、この発明の一実施例を図について説明する。第１
図ａｘｄはこの発明の一実施例におけるＡｌ膜のテーパ
ーエツチング方法を工程順１て示す断面図である。図に
おいて、（１）は基板で例えばガラス基板、（２）はガ
ラス基板（１）上に形成されたＡｌ膜で例えばスパッタ
法により厚さ０．０１〜１．５μｍになる像形成されて
いる。（３）はＡｌ膜（２）上に形成されたＭｏ膜で例
えばスパッタ法によシ厚ｇ ０．０１〜０．７μｍとな
る像形成されている。（４）はＭｏ膜（３）上ｒＣ所定
のパターンに形成されたレジストで、例えばフォトレジ
スト○ＦＰＲ−８００（東京応化社製）である。In this invention, the molybdenum film (hereinafter abbreviated as Mo film) and Al film are simultaneously etched with an etching solution, and A
The L film is etched using the Mo film as a resist. At this time, since the etching rate of the Mo film is higher than that of the Al film, the cross-sectional shape of the Ae film pattern becomes a gently tapered shape. [Example] Hereinafter, an example of the present invention will be described with reference to the drawings. 1st
Figure axd is a cross-sectional view showing step 1 of a method for taper etching an Al film in an embodiment of the present invention. In the figure, (1) is a substrate, for example a glass substrate, and (2) is an Al film formed on the glass substrate (1), on which an image with a thickness of 0.01 to 1.5 μm is formed by, for example, sputtering. . (3) is a Mo film formed on the Al film (2), and an image thereof having a thickness g of 0.01 to 0.7 μm is formed by, for example, a sputtering method. (4) is a resist formed in a predetermined rC pattern on the Mo film (3), for example, photoresist FPR-800 (manufactured by Tokyo Ohka Co., Ltd.).
次にこの発明の一実施例による具体的なＡｌ膜のテーパ
ーエツチング方法を図をもとに説明する。Next, a specific method for taper etching an Al film according to an embodiment of the present invention will be explained with reference to the drawings.
ガラス基板＋１１ ｈにＡｌ膜（２）、Ａｌ膜（２）上
にＭＯ展（３）、Ｍｏ膜（３）１に所定のパターンにフ
ォトレジスト０ＦＰＲ−８００（４）を形成する０この
基板を例えばシん酸。Form a photoresist 0FPR-800 (4) in a predetermined pattern on the glass substrate +11h with an Al film (2) on the Al film (2), an MO film (3) on the Al film (2), and a photoresist 0FPR-800 (4) in a predetermined pattern on the Mo film (3)1. For example, cynic acid.
硝酸、水（混合比１０：ｌ：ｌ）よシなるエツチング液
（液＠１５〜８０°Ｃ）に浸漬する。Ｍｏ膜（３）のエ
ツチングが進行し、下地のＡｌ膜（２）が露出し、エツ
チング液に接触すると、ＭＯ膜＋３） 、 Ａｌ膜（２
）は同時にエツチングが進行する。Immerse in an etching solution (liquid @ 15-80°C) such as nitric acid and water (mixing ratio 10:l:l). As the etching of the Mo film (3) progresses and the underlying Al film (2) is exposed and comes into contact with the etching solution, the MO film +3) and the Al film (2) are exposed.
), etching progresses at the same time.
Ａｌ１膜（２）はＭｏ膜（３）をレジストとしてエツチ
ングが進行するがＭＯ５４（３）のパターンはサイドエ
ツチングにより連続的に変化し、又Ｍｏ膜（３）はＡｌ
膜（２）よりもエツチングレートが高い（第３図のグラ
フに各々のエツチング特性を示す）０このため、Ａｌ膜
（２）は緩やかなテーパー状にエツチング出来る。この
後、レジストを除去し、Ｍｏ膜（３）を除去したい場合
は例えばＯＦ４ガスによるドライエツチングでエッチオ
フし、Ａｌ膜（２）のテーパー状にエツチングされたパ
ターンを得る。The Al1 film (2) is etched using the Mo film (3) as a resist, but the pattern of MO54 (3) changes continuously due to side etching, and the Mo film (3) is etched using the Mo film (3) as a resist.
The etching rate is higher than that of the film (2) (the etching characteristics of each are shown in the graph of FIG. 3). Therefore, the Al film (2) can be etched into a gentle tapered shape. Thereafter, the resist is removed, and if it is desired to remove the Mo film (3), it is etched off by dry etching using OF4 gas, for example, to obtain a tapered etched pattern of the Al film (2).
なお、上記実施例では基板（１）としてガラス基板を用
いた場合について説明したが、仁れに限るものではなく
、例えばシリコン基板等であってもよい０
また、上記実施例ではＡｌ膜（２）およびＭｏ膜（３）
をスパッタ法により形成した場合について説明したが、
真空蒸着法等の他の方法で形成してもよく上記実施例と
同様の幼果が得られる０
また、上記実施例ではレジスト膜（４）にフォトレジス
） ０ＦＰＲ−１３００（東京応化社製）を用いた場に
ついて説明したが、これに限るものではなく、他のフォ
トレジストであってもよく、さらにＥＢレジストや金属
レジスト等であってもよい。In addition, in the above embodiment, the case where a glass substrate was used as the substrate (1) was explained, but this is not limited to the case where a glass substrate is used as the substrate (1). For example, a silicon substrate etc. may also be used. ) and Mo film (3)
We have explained the case where it is formed by sputtering method, but
It may also be formed by other methods such as vacuum evaporation, and the same young fruit as in the above example can be obtained. Although a case has been described in which a photoresist is used, the photoresist is not limited to this, and other photoresists may be used, and furthermore, an EB resist, a metal resist, etc. may be used.
また、上記実施例ではエツチング液としてシん酸、硝酸
、水をそれぞれ混合比１０：ｌ：ｌの割合で混合したも
のを用いた場合について説明したが、上記混合比に限る
ものではなく、さらに酢酸や界面活性剤等の他の溶媒や
溶質を含んでいてもよい。Further, in the above embodiment, a case was explained in which a mixture of cynic acid, nitric acid, and water at a mixing ratio of 10:l:l, respectively, was used as the etching solution, but the mixing ratio is not limited to the above. It may also contain other solvents and solutes such as acetic acid and surfactants.
なお、アルミニウムを主成分とする膜すなわちＡｌ膜（
２）としては、ＡＩ単体膜の他にＡＩＫＳｉやＯｕやＴ
１等の添加物を１〜２ｗｔ％程度含むＡ／合金膜が用い
られる。Note that a film whose main component is aluminum, that is, an Al film (
2) In addition to AI single film, AIKSi, Ou, and T
An A/alloy film containing about 1 to 2 wt % of additives such as No. 1 is used.
以上のように、この発明によれば、アルミニウムを主成
分とする膜とにモリブデン換全形成する工程、上記モリ
ブデン膜上にレジスト膜を形成する工程、および少なく
ともりん酸を含むエツチング液により上記モリブデン膜
およびアルミニウム膜をエツチングする工程を順に施す
ので、容易に、安定性および再現性良くアルミニウム膜
のテーパーエツチングが行なえる効果がある。As described above, according to the present invention, there are a step of completely converting molybdenum into a film containing aluminum as a main component, a step of forming a resist film on the molybdenum film, and a step of forming a resist film on the molybdenum film, and etching the molybdenum with an etching solution containing at least phosphoric acid. Since the steps of etching the film and the aluminum film are performed in sequence, the taper etching of the aluminum film can be easily performed with good stability and reproducibility.
第１図（ａ）〜（ｄ）はそれぞれこの発明の一実施例に
よるアルミニウム膜のテーパーエツチング方法を工程順
に示す断面図、第２図（ａ）〜（、）はそれぞれ従来の
アルミニウム膜のテーパーエツチング方法を工程順に示
す断面図、第３閃はアルミニウム膜およびモリブデン膜
のエツチング液温に対するエツチングレートを示す特性
図である。
図において、（１）は基板、（２）はｋｌ膜、（３）は
Ｍｏ膜、（４）はレジスト膜である。
なお、各図中同一符号は同一または相当部分を示すもの
とする。FIGS. 1(a) to (d) are cross-sectional views showing the steps of a taper etching method for an aluminum film according to an embodiment of the present invention, and FIGS. The third figure is a cross-sectional view showing the etching method in the order of steps. In the figure, (1) is a substrate, (2) is a KL film, (3) is a Mo film, and (4) is a resist film. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (2)
を形成する工程、上記モリブデン膜上にレジスト膜を形
成する工程、および少なくともりん酸を含むエッチング
液により上記モリブデン膜およびアルミニウム膜をエッ
チングする工程を順に施すアルミニウム膜のテーパーエ
ッチング方法。(1) A step of forming a molybdenum film on a film whose main component is aluminum, a step of forming a resist film on the molybdenum film, and a step of etching the molybdenum film and aluminum film with an etching solution containing at least phosphoric acid. Taper etching method for aluminum film.
記載のアルミニウム膜のテーパーエッチング方法。(2) The method for taper etching an aluminum film according to claim 1, wherein the etching solution contains nitric acid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31137687A JPH01151236A (en) | 1987-12-08 | 1987-12-08 | Taper-etching of aluminum film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31137687A JPH01151236A (en) | 1987-12-08 | 1987-12-08 | Taper-etching of aluminum film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01151236A true JPH01151236A (en) | 1989-06-14 |
Family
ID=18016432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31137687A Pending JPH01151236A (en) | 1987-12-08 | 1987-12-08 | Taper-etching of aluminum film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01151236A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0786230A (en) * | 1993-08-06 | 1995-03-31 | Internatl Business Mach Corp <Ibm> | Method of taper etching |
| WO2004033945A1 (en) * | 2002-09-27 | 2004-04-22 | Continental Teves Ag & Co. Ohg | Solenoid valve |
| JP2006229216A (en) * | 2005-02-15 | 2006-08-31 | Samsung Electronics Co Ltd | Etchant composition and manufacturing method for thin film transistor array panel |
| USRE41363E1 (en) * | 1995-11-21 | 2010-06-01 | Samsung Electronics Co., Ltd. | Thin film transistor substrate |
-
1987
- 1987-12-08 JP JP31137687A patent/JPH01151236A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0786230A (en) * | 1993-08-06 | 1995-03-31 | Internatl Business Mach Corp <Ibm> | Method of taper etching |
| USRE41363E1 (en) * | 1995-11-21 | 2010-06-01 | Samsung Electronics Co., Ltd. | Thin film transistor substrate |
| WO2004033945A1 (en) * | 2002-09-27 | 2004-04-22 | Continental Teves Ag & Co. Ohg | Solenoid valve |
| JP2006229216A (en) * | 2005-02-15 | 2006-08-31 | Samsung Electronics Co Ltd | Etchant composition and manufacturing method for thin film transistor array panel |
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