JPS63213293A - Method of forming pattern of transparent conductive film - Google Patents
Method of forming pattern of transparent conductive filmInfo
- Publication number
- JPS63213293A JPS63213293A JP62045510A JP4551087A JPS63213293A JP S63213293 A JPS63213293 A JP S63213293A JP 62045510 A JP62045510 A JP 62045510A JP 4551087 A JP4551087 A JP 4551087A JP S63213293 A JPS63213293 A JP S63213293A
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- conductive film
- pattern
- etching
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 229910003437 indium oxide Inorganic materials 0.000 claims description 7
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 7
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 claims description 6
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 6
- 229940071870 hydroiodic acid Drugs 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims 2
- 239000002253 acid Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 25
- 239000010409 thin film Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、薄膜ＥＬ素子や撮像管などのデバイスに用い
られる酸化インジウムを主成分とする透明導電膜のパタ
ーン形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for forming a pattern of a transparent conductive film containing indium oxide as a main component used in devices such as thin film EL elements and image pickup tubes.
従来の技術
酸化インジウムを主成分とする透明導電膜は、７オトレ
ジストを所定のパターンに形成した後、これをマスクと
して塩酸を含むエツチング液によって湿式エツチングす
る方法、あるいは反応性イオンによりドライエツチング
する方法が行なわれていた（特開昭６０−３７７３４号
）。Conventional technology A transparent conductive film containing indium oxide as a main component is produced by forming a 7-photoresist into a predetermined pattern and then using this as a mask for wet etching with an etching solution containing hydrochloric acid, or by dry etching using reactive ions. (Japanese Patent Application Laid-Open No. 60-37734).
発明が解決しようとする問題点
薄膜ＥＬ素子、撮像管などの薄膜デバイスに用いられる
酸化インジウムを主成分とする透明導電膜は、パターン
のエツジ部分にテーパを形成し、その上に形成した薄膜
層の絶縁破壊を防ぐ必要がある。しかし湿式エツチング
においては、パターンエツジ部分において適当な幅のテ
ーパを形成することと、パターンサイズを正確に出すこ
とを同時に実現できないという問題点があった。塩酸を
含む従来のエッチャントはレジストと透明導電膜の界面
に浸み込み、パターンエツジ部に幅の広いテーパは形成
できるがパターン精度がよくない。Problems to be Solved by the Invention Transparent conductive films containing indium oxide as a main component used in thin film devices such as thin film EL elements and image pickup tubes have a tapered pattern at the edge, and a thin film layer formed on top of the tapered edges. It is necessary to prevent dielectric breakdown. However, wet etching has a problem in that it is not possible to form a taper of an appropriate width at the pattern edge portion and to accurately determine the pattern size at the same time. Conventional etchants containing hydrochloric acid seep into the interface between the resist and the transparent conductive film, and although wide tapers can be formed at pattern edges, pattern accuracy is poor.
一方、ドライエツチングにおいてはマスクパターンの周
辺部をテーパ状に形成した後、透明導電膜をエツチング
する方法が知られているが、大面積の薄膜デバイスをエ
ツチングするためには量産性がよくないという問題点が
ある。On the other hand, in dry etching, a method is known in which the peripheral part of the mask pattern is formed into a tapered shape and then the transparent conductive film is etched, but it is said that it is not suitable for mass production when etching large area thin film devices. There is a problem.
本発明はそのような欠点を除去し、テーパが形成でき、
しかもパターンサイズを正確に出すことができ、量産性
のよいパターン形成方法を提供するものである。The present invention eliminates such drawbacks, allows formation of a taper,
Moreover, the present invention provides a pattern forming method that can accurately determine the pattern size and is suitable for mass production.
問題点を解決するための手段 以下の工程によって透明導電膜のパターン形成をする。Means to solve problems A pattern of a transparent conductive film is formed by the following steps.
（ａ） 透明導電膜上にホトレジスト膜を所定のパタ
ーンに形成する工程。（ｂ） ヨウ化水素酸と臭化水
素酸のうち少なくとも一種類を含み且つ塩酸を含むエツ
チング液によって前記透明導電膜をテーパエツチングす
る工程。(a) A step of forming a photoresist film in a predetermined pattern on the transparent conductive film. (b) Taper etching the transparent conductive film using an etching solution containing at least one of hydroiodic acid and hydrobromic acid and also hydrochloric acid.
作 用
本発明は、ヨウ化水素酸又は臭化水素酸がパターン精度
よくエツチングできる性質と塩酸パターンのエツジ部に
大きなテーパを形成しやすい性質を利用し、それらの両
性質をうまくコントロールしたエツチング液を使用する
ことにより、エツジ部分に適度なテーパをもち、且つパ
ターン精度のよい透明導電膜パターンを形成するもので
ある。Function The present invention takes advantage of the properties of hydroiodic acid or hydrobromic acid to etch patterns with high accuracy and the property of easily forming large tapers at the edge portions of hydrochloric acid patterns, and provides an etching solution that skillfully controls both of these properties. By using this method, a transparent conductive film pattern having an appropriate taper at the edge portion and high pattern accuracy can be formed.
実施例
以下、本発明の実施例について説明する。先ず本発明の
第１実施例を第１図を参照しながら説明する。同図ａに
示すように、ガラス基板１上に設けた膜厚１５０ｎｍの
酸化インジウムを主成分とする透明導電膜２上にネガテ
ィブタイプのホトレジスト＠３を所定のパターンに形成
する。ポストベークは１４０℃、２０分間とした。レジ
ストはコダソク社製ＫＭＲを用いた。矢にヨウ化水素酸
と塩酸を１０：１に混合したエツチング液を用いて３０
℃、３分間エツチングすると、同図すに示すように透明
導電膜２はパターン精度よく形成でき、且つエツジ部に
ゆるやかなテーパを形成することができる。テーパ幅は
塩酸濃度とエツチング温度によって変化し、ヨウ化水素
酸：塩酸＝１０：１で３０℃、３分では約２μｍである
。ポジタイプのホトレジストを用いても同７謙にテーパ
エツチングが可能である。ただし、その場合にはポスト
ベークは行なわない。同図Ｃは以上のようにして形成し
たものである。Examples Examples of the present invention will be described below. First, a first embodiment of the present invention will be described with reference to FIG. As shown in FIG. 1A, a negative type photoresist@3 is formed in a predetermined pattern on a transparent conductive film 2 having a film thickness of 150 nm and mainly composed of indium oxide, which is provided on a glass substrate 1. As shown in FIG. Post-baking was performed at 140°C for 20 minutes. As the resist, KMR manufactured by Kodasoku Co., Ltd. was used. Using an etching solution containing a 10:1 mixture of hydroiodic acid and hydrochloric acid on the arrow,
By etching for 3 minutes at .degree. C., the transparent conductive film 2 can be formed with high pattern accuracy as shown in the figure, and a gentle taper can be formed at the edge portion. The taper width changes depending on the hydrochloric acid concentration and etching temperature, and is about 2 μm at 30° C. and 3 minutes at hydroiodic acid:hydrochloric acid=10:1. Even if a positive type photoresist is used, taper etching is possible. However, in that case, no post-bake is performed. Figure C is formed as described above.
また第２図に他の実施例を示す。本実施例は酸化インジ
ウムを主成分とする透明導電膜のエツチングを２段階に
行なうことを特徴とする。Further, FIG. 2 shows another embodiment. This embodiment is characterized in that the transparent conductive film containing indium oxide as a main component is etched in two stages.
透明導電膜は成膜条件によっては均一な膜を形成するこ
とが困難である。例えば合金ターゲットを用いてスパッ
タリングする場合や、大面積で膜厚の大きい膜の場合な
どである。しかし本実施例によればまず第１段階でパタ
ーン精度よくエツチングし、第２段階でエツジ部分に適
度なチー／＜を形成するため、エツチング残シや過度の
オーツ（−エッチを生じることなくパターン形成ができ
る。It is difficult to form a uniform transparent conductive film depending on the film forming conditions. For example, this is the case when sputtering is performed using an alloy target, or when the film is large in area and thick. However, according to this embodiment, the pattern is etched with high accuracy in the first step, and an appropriate chi/< is formed at the edge portion in the second step. Can be formed.
この実施例を第２図を参照しながら具体的に説明する。This embodiment will be specifically explained with reference to FIG.
図ａに示すように、ガラス基板４上に設けた膜厚６６０
ｎ ｍの酸化インジウムを主成分とする透明導電膜Ｓ
上にポジティブタイプのホトレジストを用いて所定のパ
ターン６を形成する。ポストベークは行なわない。まず
臭化水素酸を用いて３５℃、１０分間エツチングする。As shown in Figure a, the film thickness 660 provided on the glass substrate 4
Transparent conductive film S mainly composed of nm indium oxide
A predetermined pattern 6 is formed thereon using a positive type photoresist. No post-bake is performed. First, etching is performed using hydrobromic acid at 35° C. for 10 minutes.
同図すに示すように透明導電膜６はパターン精度よくエ
ツチングされる。エツチング時間を長くしてもパターン
幅は狭くならない。この時透明導電膜５の工、。As shown in the figure, the transparent conductive film 6 is etched with high pattern accuracy. Even if the etching time is increased, the pattern width does not become narrower. At this time, the transparent conductive film 5 is formed.
ジ部分にはテーパがほとんど形成されていない。There is almost no taper formed in the ji portion.
次に臭化水素酸に塩酸を１５＝１に混合したエッチャン
トを用いて３６℃、１０分間エツチングすることにより
、パターンエツジ部に約６μｍのテーパが形成され同図
Ｃのようになる。Next, etching is performed at 36° C. for 10 minutes using an etchant containing a mixture of hydrobromic acid and hydrochloric acid in a ratio of 15=1, thereby forming a taper of about 6 μm at the edge of the pattern, as shown in FIG.
なおレジストパターン形成後にポストベークを行なわな
い理由は、ベークによりポジティブタイプのレジストは
エツチング液の浸み込みを生じなくなるためである。The reason why post-baking is not performed after forming the resist pattern is that baking prevents the etching solution from penetrating into the positive type resist.
本実施例では、シブレイ社製マイクロポジットｊ ４０
０−３１のポジレジストを用いた。In this example, Microposite J 40 manufactured by Sibley
A positive resist of 0-31 was used.
ネガレジスｌ用いる場合は、ポストベークの有無に関係
なくチーバエ、ノチングが可能である。When using negative resist l, it is possible to perform fly-off and notching regardless of whether or not post-baking is performed.
発明の効果
上記実施例より明らかなように本発明によればパターン
精度がよく且つエツジ部にゆるやかなテーパを有した酸
化インレツトを主成分とした透明導電膜の簡単で再現性
のよい方法を提供できる。Effects of the Invention As is clear from the above examples, the present invention provides a simple and reproducible method for producing a transparent conductive film mainly composed of an oxidized inlet with good pattern accuracy and a gentle taper at the edges. can.
第１図は本発明による透明導電膜のパターン形成方法を
用いた工程の一実施例を示す図、第２図は他の実施によ
る工程を示す図である。
１．４・・・・・ガラス基板、２．５・・・・・・透明
導電膜、３．６・・・・・・ホトレジスト膜。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名３−
レンスト項FIG. 1 is a diagram showing an example of a process using the method for forming a pattern of a transparent conductive film according to the present invention, and FIG. 2 is a diagram showing a process according to another implementation. 1.4...Glass substrate, 2.5...Transparent conductive film, 3.6...Photoresist film. Name of agent: Patent attorney Toshio Nakao and 1 other person3-
Renst term
Claims (2)
トレジスト膜を所定のパターン形成する工程と、前記透
明導電膜をヨウ化水素酸と臭化水素酸のうち少なくとも
一方を含む酸に塩酸を加えたエツチング液によつてエツ
チングする工程とを有することを特徴とする透明導電膜
のパターン形成方法。(1) Forming a photoresist film in a predetermined pattern on a transparent conductive film containing indium oxide as a main component, and applying hydrochloric acid to an acid containing at least one of hydroiodic acid and hydrobromic acid. 1. A method for forming a pattern on a transparent conductive film, comprising the step of etching with an added etching solution.
なくとも一種類を主成分とするエツチング液によつてエ
ツチングした後、 エツチング液によつてエツチングする工 程を有することを特徴とする特許請求の範囲第１項記載
の透明導電膜のパターン形成方法。(2) The transparent conductive film is etched with an etching liquid containing at least one of hydroiodic acid and hydrobromic acid as a main component, and then etched with the etching liquid. A method for forming a pattern of a transparent conductive film according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62045510A JPS63213293A (en) | 1987-02-27 | 1987-02-27 | Method of forming pattern of transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62045510A JPS63213293A (en) | 1987-02-27 | 1987-02-27 | Method of forming pattern of transparent conductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63213293A true JPS63213293A (en) | 1988-09-06 |
Family
ID=12721407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62045510A Pending JPS63213293A (en) | 1987-02-27 | 1987-02-27 | Method of forming pattern of transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63213293A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997046054A1 (en) * | 1996-05-29 | 1997-12-04 | Idemitsu Kosan Co., Ltd. | Organic el device |
-
1987
- 1987-02-27 JP JP62045510A patent/JPS63213293A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997046054A1 (en) * | 1996-05-29 | 1997-12-04 | Idemitsu Kosan Co., Ltd. | Organic el device |
| US6280861B1 (en) | 1996-05-29 | 2001-08-28 | Idemitsu Kosan Co., Ltd. | Organic EL device |
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