JPH0193149A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH0193149A
JPH0193149A JP62250351A JP25035187A JPH0193149A JP H0193149 A JPH0193149 A JP H0193149A JP 62250351 A JP62250351 A JP 62250351A JP 25035187 A JP25035187 A JP 25035187A JP H0193149 A JPH0193149 A JP H0193149A
Authority
JP
Japan
Prior art keywords
wiring
layer
film
bump electrode
bump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62250351A
Other languages
English (en)
Japanese (ja)
Inventor
Shigeru Harada
繁 原田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62250351A priority Critical patent/JPH0193149A/ja
Priority to DE3830131A priority patent/DE3830131A1/de
Publication of JPH0193149A publication Critical patent/JPH0193149A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44Conductive materials thereof
    • H10W20/4403Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4405Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251Changing the shapes of bumps
    • H10W72/01255Changing the shapes of bumps by using masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/231Shapes
    • H10W72/234Cross-sectional shape, i.e. in side view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • H10W72/242Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • H10W72/244Dispositions, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/923Bond pads having multiple stacked layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/942Dispositions of bond pads relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/981Auxiliary members, e.g. spacers
    • H10W72/983Reinforcing structures, e.g. collars
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP62250351A 1987-10-02 1987-10-02 半導体装置 Pending JPH0193149A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP62250351A JPH0193149A (ja) 1987-10-02 1987-10-02 半導体装置
DE3830131A DE3830131A1 (de) 1987-10-02 1988-09-05 Flip-chip-halbleitereinrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62250351A JPH0193149A (ja) 1987-10-02 1987-10-02 半導体装置

Publications (1)

Publication Number Publication Date
JPH0193149A true JPH0193149A (ja) 1989-04-12

Family

ID=17206624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62250351A Pending JPH0193149A (ja) 1987-10-02 1987-10-02 半導体装置

Country Status (2)

Country Link
JP (1) JPH0193149A (enExample)
DE (1) DE3830131A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005322834A (ja) * 2004-05-11 2005-11-17 Ricoh Co Ltd パターン形状体及びその製造方法
JP2007110012A (ja) * 2005-10-17 2007-04-26 Ngk Insulators Ltd 誘電体デバイスの製造方法、及び誘電体デバイス
JP2008114795A (ja) * 2006-11-07 2008-05-22 Mazda Motor Corp カーテンエアバッグ装置を備えた車両構造

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2598328B2 (ja) * 1989-10-17 1997-04-09 三菱電機株式会社 半導体装置およびその製造方法
US5268072A (en) * 1992-08-31 1993-12-07 International Business Machines Corporation Etching processes for avoiding edge stress in semiconductor chip solder bumps
IL106892A0 (en) * 1993-09-02 1993-12-28 Pierre Badehi Methods and apparatus for producing integrated circuit devices
IL108359A (en) * 1994-01-17 2001-04-30 Shellcase Ltd Method and apparatus for producing integrated circuit devices
IL110261A0 (en) * 1994-07-10 1994-10-21 Schellcase Ltd Packaged integrated circuit
KR20220147617A (ko) * 2020-03-02 2022-11-03 인프리아 코포레이션 무기 레지스트 패터닝을 위한 공정 환경

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5688359A (en) * 1979-12-21 1981-07-17 Toshiba Corp Semiconductor device and manufacture thereof
JPS6288342A (ja) * 1985-10-15 1987-04-22 Fujitsu Ltd 積層強化型配線層の構造とその形成方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017890A (en) * 1975-10-24 1977-04-12 International Business Machines Corporation Intermetallic compound layer in thin films for improved electromigration resistance
US4502207A (en) * 1982-12-21 1985-03-05 Toshiba Shibaura Denki Kabushiki Kaisha Wiring material for semiconductor device and method for forming wiring pattern therewith

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5688359A (en) * 1979-12-21 1981-07-17 Toshiba Corp Semiconductor device and manufacture thereof
JPS6288342A (ja) * 1985-10-15 1987-04-22 Fujitsu Ltd 積層強化型配線層の構造とその形成方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005322834A (ja) * 2004-05-11 2005-11-17 Ricoh Co Ltd パターン形状体及びその製造方法
JP2007110012A (ja) * 2005-10-17 2007-04-26 Ngk Insulators Ltd 誘電体デバイスの製造方法、及び誘電体デバイス
JP2008114795A (ja) * 2006-11-07 2008-05-22 Mazda Motor Corp カーテンエアバッグ装置を備えた車両構造

Also Published As

Publication number Publication date
DE3830131A1 (de) 1989-04-20
DE3830131C2 (enExample) 1993-08-12

Similar Documents

Publication Publication Date Title
US5709958A (en) Electronic parts
US5173449A (en) Metallization process
US4166279A (en) Electromigration resistance in gold thin film conductors
US6001461A (en) Electronic parts and manufacturing method thereof
US3879746A (en) Gate metallization structure
US4283439A (en) Method of manufacturing a semiconductor device by forming a tungsten silicide or molybdenum silicide electrode
JPH03214717A (ja) 電気的セラミック酸化物装置用電極
US6203926B1 (en) Corrosion-free multi-layer conductor
EP0725439B1 (en) Electronic parts with metal wiring and manufacturing method thereof
US5876861A (en) Sputter-deposited nickel layer
US7799677B2 (en) Device comprising multi-layered thin film having excellent adhesive strength and method for fabricating the same
JPH0193149A (ja) 半導体装置
JPS5846631A (ja) 半導体装置及びその製造方法
EP0323554A1 (en) Ohmic contacts for semiconductor devices and method for forming ohmic contacts
EP0402061B1 (en) Metallization process
JP2789332B2 (ja) 金属配線の構造及びその形成方法
US3798145A (en) Technique for reducing interdiffusion rates and inhibiting metallic compound formation between titanium and platinum
JP3315211B2 (ja) 電子部品
US4726983A (en) Homogeneous fine grained metal film on substrate and manufacturing method thereof
US3746944A (en) Contact members for silicon semiconductor devices
US4923526A (en) Homogeneous fine grained metal film on substrate and manufacturing method thereof
EP0033358B1 (en) Process for fabricating thin metal superconducting films of improved thermal cyclability and device
JPH03142883A (ja) 半導体装置及びその製造方法
JP2742686B2 (ja) 半導体装置
JPH06140401A (ja) 集積回路装置