JPH0191441A - Manufacture of semiconductor device and manufacturing equipment of semiconductor - Google Patents

Abstract

PURPOSE:To simplify a process by a method wherein flattening is performed by combining selective deposition on the recessed part of a substrate by laser light CVD method, and deposition on the whole surface of the substrate by lamp light CVD method. CONSTITUTION:The title equipment is constituted of the following; a laser 2 as a first light source positioned in the manner in which a substrate 12 is vertically irradiated, a mask 4 cutting off incident light in a desired region to perform selective deposition, a mercury lamp 6 as a second light source, a mirror 8 to improve the lamp efficiency, a light transmitting window 10, a heater 14 to heat the substrate 12, a susceptor 18 to fix the substrate 12, a reaction chamber 16 to perform the deposition of a mask, an introducing system of material gas and a discharging system of reaction gas. By combining selective deposition on a recessed part of the substrate by laser light CVD method and deposition on the whole surface of the substrate by lamp light CVD method, a flat film deposition is enabled. Therefore flattening is enabled only by a depositing process in the same equipment, and the process is simplified.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a semiconductor device in which a thin film is deposited and planarized on a substrate having fine irregularities at a low temperature, and a semiconductor manufacturing apparatus used therefor.

2. Description of the Related Art As the degree of integration of LSI increases, techniques for stacking wiring in multiple layers are being used. Conventionally, a method for planarizing an interlayer insulating film is SOG (Spin on Glass).
) coating method, piano sputtering method in which the insulating film is deposited while being etched on the substrate by applying high frequency power so that self-bias is applied to the substrate side when depositing the insulating film using the high frequency Nupasota method, As shown in Fig. 3 (4) to (5), after planarization using the CVD method and resist, the resist and insulating film are etched at the same rate, and then an interlayer insulating film is deposited using an etch-back method. It is used. In Fig. 3, 5o is 81 board, 62 is Al wiring, 54.60? 'i, CV D S 10
2B, 56° 58 is a resist film.

Problems to be Solved by the Invention However, SOG has the problem that cracks occur when the thickness is about 1 μm. Furthermore, in the bias battering method, there is a risk that plasma may damage device characteristics. The etch-back method requires a complicated process, and the plasma CVD method is generally used as a method to form an insulating film on A4 wiring, but as the wiring spacing becomes finer, plasma CVD
There is also the problem that voids occur even when the etch-back method is used because the step coverage of D is not good.

Also, like the bias sputtering method, damage caused by plasma also poses a problem. Although the photo-CVD method has better step and coverage and less damage than the plasma CVD method, the photo-CVD method alone cannot achieve flattening because the level difference in the underlying layer is reflected as is.

SUMMARY OF THE INVENTION In view of these conventional problems, an object of the present invention is to provide a semiconductor manufacturing apparatus that solves these problems and a method of manufacturing a semiconductor device using the same.

Means for Solving the Problems In order to solve these problems, the present invention provides a laser as a first light source positioned so that its light is perpendicularly incident on the substrate, and a laser between the laser and the substrate. A device is used that has a light source consisting of a mask located at the substrate and having a pattern drawn so that the laser beam is incident only on the concave portion of the substrate, and a lamp as a second light source. Using this apparatus, a combination of selective deposition of a thin film in the concave portions of the substrate using the laser beam and the mask, and deposition of the thin film over the entire surface of the substrate using the lamp light is applied to the substrate having irregularities. Provided is a semiconductor manufacturing device based on an optical excitation method, characterized in that a flat thin film is deposited on a semiconductor substrate, and further, the first thin film is selectively deposited on a concave portion of a semiconductor substrate having an uneven surface using the semiconductor manufacturing device. a step of depositing on
and depositing a second thin film on the entire surface of the semiconductor substrate, and flattening the semiconductor substrate using the first and second thin films. .

action With the above configuration, the present invention operates as follows.

(2) Planarization can be achieved by combining selective deposition in the concave portions of the substrate using the laser light CVD method and deposition on the entire surface of the substrate using the lamp light CVD method.

(2) By changing the mask pattern used for selective deposition by laser light CVD, it is possible to adapt to any uneven shape of the substrate.

(2) Since the optical CVD method is used, there is no risk of plasma damaging the device characteristics, unlike the bias sputtering method. Furthermore, since it can be deposited at a low temperature, it can be applied to film deposition on Ad wiring.

■ Flattening can be achieved with just a deposition process in the same device, making it much simpler than the etch-back method.

Embodiment First, an example of the configuration of a semiconductor manufacturing apparatus used in the method of the present invention will be described with reference to FIG.

FIG. 1 shows a laser 2 as a first light source positioned so that the incident light hits the substrate 12 perpendicularly, a mask 4 that blocks the incident light in a desired area for selective deposition, and a second laser. A susceptor 18 that has a mercury lamp 6 as a light source, a mirror 8 located around the mercury lamp to improve lamp efficiency, a light transmission window 1o, and a heater 14 for heating the substrate 12 and fixes the substrate 12. This is an optical CVD apparatus composed of a reaction chamber 16 in which a film is deposited, a source gas introduction system, and a reaction gas exhaust system.

According to this structure, selective deposition using laser light and full-scale deposition using lamp light can be performed successively or simultaneously in the same reaction chamber.

Alternatively, FIG. 1 (to) shows a laser 2 as a first light source, a mask 4 that blocks incident light in a desired area for selective deposition, a first light transmitting window 10A, and a substrate 12.
A first heater 14A for heating the substrate 12
A susceptor 18A for fixing A, a first reaction chamber 16A having a source gas introduction system and a reaction gas exhaust system and for performing selective film deposition, and a mercury lamp 6 as a second light source. , a mirror 8 for improving lamp efficiency, a second light transmission window 10B, a second heater 14B for heating the substrate 12B, and a susceptor 18 for fixing the substrate 12B.
This is an optical CVD apparatus consisting of a second reaction chamber having a source gas introduction system and a reaction gas exhaust system, and for depositing a film on the entire surface of the substrate 12B.

According to this structure, unlike the apparatus shown in the first diagram, it is not possible to perform selective deposition using laser light and full-surface deposition using lamp light at the same time, but the light transmission windows used for laser light CVD and lamp light CVD are different. Therefore, the degree to which the film deposition rate decreases due to film deposition also occurring on the light-transmitting window is:
The device shown in FIG. 1(B) has the advantage of being smaller than the device shown in FIG. 14.

Furthermore, an embodiment of a method for manufacturing a semiconductor device using the semiconductor manufacturing apparatus of the present invention will be described based on a specific example.

FIG. 2 4-(q shows the manufacturing process of two-layer wiring in an embodiment according to the present invention. 81 A circuit element is created on the substrate 100,
The first conductor 102A that becomes a pad, wiring, etc.
102C is formed.

First, as shown in FIG.
Laser light CV is applied onto the Si substrate 100 over a wide area of m or more.
A first 8102 film P-7104 as an insulating film is selectively formed using the D method to be slightly thicker than the Ad wiring 102. At this time, for example, if a SiO2 film with a thickness of 1 μm is formed, the mask pattern edge of the laser beam will be
S10 with a gentle slope with a spread of about 3 μm
It has a two-layer pattern. Next, as shown in FIG. 2 (I3), a second 5102 film 106 with a thickness of about 1 μm is formed on the entire surface of the St substrate 1oO by the lamp light CVD method, thereby forming a substantially flat interlayer insulating film. After that, S z 02 film 1
04, 106 to form a null-hole and then as a second conductor (7fil wiring 1
08 to obtain a two-layer wiring as shown in FIG. 2 (q).

5i02 By forming the film pattern 104, S
Since only a recess with a width of 1 μm or less exists on the t-substrate 1oo, if the 5102 film 106 is formed with a thickness of about 1 μm,
The surface will be almost flat.

Formation of a flat interlayer insulating film has the effect of eliminating disconnection when forming upper layer wiring.

Note that in the second embodiment, laser light CVD
After the first S z 02 film pattern 104 is deposited by the method, the second S 10β 106 is deposited by lamp light CVD.
Two films can be deposited. In addition to Si○, the insulating film is made of Si
3N4 or 5ioN may also be used.

Although the second embodiment described above describes the formation of an interlayer insulating film, the method of the present invention can also be used to deposit a flat film on an uneven substrate, such as burying an insulating film in trench isolation. It can be applied to the process.

Effects of the Invention As described above, according to the semiconductor device manufacturing method and semiconductor manufacturing apparatus of the present invention, the following effects can be obtained.

(2) A flat film can be deposited by combining selective deposition in the concave portions of the substrate by laser light CVD and deposition on the entire surface of the substrate by lamp light CVD.

(2) Since the photo-CVD method is used, there is no damage to device characteristics due to plasma.

■ Flattening can be achieved by simply depositing in the same device, which simplifies the process.

■ If applied to the formation of an interlayer insulating film for multilayer wiring, disconnection of upper layer wiring can be prevented. Furthermore, by realizing multilayer wiring, it is possible to achieve high integration of the elements.

As described above, the present invention can form a flat insulating film through a simple process without damaging the device, and greatly contributes to higher integration and reliability of the device.

[Brief explanation of the drawing]

FIG. 1 is a schematic cross-sectional view showing a semiconductor manufacturing apparatus used in the method of the present invention, FIG. 2 is a process cross-sectional view for explaining an embodiment of a method for manufacturing a semiconductor device using the semiconductor manufacturing apparatus,
The figure is a process cross-sectional view for explaining the etch-back method, which is one of the conventional planarization methods. 2...Laser, 4...Mask, 6.
...Mercury lamp, 10...Light transmission window, 1
6...Reaction chamber, 18...Susceptor, 1
2,50,100...Si substrate, 62, 1
02, 108----Al&MA, 54,60°104*106''...CV D S 10
2 film, 56.58...Resist film. Name of agent: Patent attorney Toshio Nakao and 1 other person2-
M-shi-ji 4・-mask ()gugoonyu) Otsu-Mizuannofu. 8-Mirror to---1f, ±over-contact 12・-substrate 14-Heater (Hara/8/6 Fig. 1(B)/,!3A l6A 2-m-shi-bu-4--- Mask () Gugoonro) 6- Water 4 lamp 8- Mirror 10- One-pass, Aiji 12- Substrate 14-- Heater 16- and tile display/8-"!7" Zea-ri 18B 16β lθ0-5i substrate lθ and -Al 100% (first conductor return lθ4
--3t (h film pattern (CVr) -3dhl
j) 10δA /IZA/(7281Rc 50--- Si substrate 52-Af Nishihama line 54--- CVD-8, i, 0 film (U stock film) No.
3 diagram

Claims (2)

[Claims] (1) A laser as a first light source positioned so that its light is perpendicularly incident on the substrate, and a laser that is positioned between the laser and the substrate so that the laser beam is incident only on the concave portion of the substrate. selectively forming a thin film in the concave portions of the substrate using a patterned mask;
forming a thin film on the front surface using a lamp as a light source, and depositing a flat thin film on the uneven substrate. (2) A laser as a first light source positioned so that its light is perpendicularly incident on the substrate, and a laser that is positioned between the laser and the substrate so that the laser beam is incident only on the concave portion of the substrate. It has a light source consisting of a mask with a pattern drawn thereon and a lamp as a second light source, and selectively deposits onto the concave portions of the substrate using the laser beam and the mask, and deposits onto the substrate using the lamp light. Semiconductor manufacturing equipment that performs full-surface deposition.