JPH0191264U - - Google Patents
Info
- Publication number
- JPH0191264U JPH0191264U JP18750587U JP18750587U JPH0191264U JP H0191264 U JPH0191264 U JP H0191264U JP 18750587 U JP18750587 U JP 18750587U JP 18750587 U JP18750587 U JP 18750587U JP H0191264 U JPH0191264 U JP H0191264U
- Authority
- JP
- Japan
- Prior art keywords
- laser diode
- diode module
- power supply
- output current
- light emission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1987187505U JPH0617292Y2 (ja) | 1987-12-09 | 1987-12-09 | 半導体受光素子の検査装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1987187505U JPH0617292Y2 (ja) | 1987-12-09 | 1987-12-09 | 半導体受光素子の検査装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0191264U true JPH0191264U (en, 2012) | 1989-06-15 |
JPH0617292Y2 JPH0617292Y2 (ja) | 1994-05-02 |
Family
ID=31478653
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1987187505U Expired - Lifetime JPH0617292Y2 (ja) | 1987-12-09 | 1987-12-09 | 半導体受光素子の検査装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0617292Y2 (en, 2012) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007208253A (ja) * | 2006-01-09 | 2007-08-16 | Samsung Electronics Co Ltd | イメージセンサテスト方法及びその装置 |
JP2009195968A (ja) * | 2008-02-25 | 2009-09-03 | Mitsubishi Electric Corp | レーザスクライブ装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59178742A (ja) * | 1983-03-30 | 1984-10-11 | Fujitsu Ltd | 半導体受光素子の特性測定方法 |
JPS6168324U (en, 2012) * | 1984-10-12 | 1986-05-10 | ||
JPS62145356U (en, 2012) * | 1986-03-07 | 1987-09-12 | ||
JPS62261187A (ja) * | 1986-05-07 | 1987-11-13 | Ricoh Co Ltd | 半導体レ−ザ−ユニツト |
-
1987
- 1987-12-09 JP JP1987187505U patent/JPH0617292Y2/ja not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59178742A (ja) * | 1983-03-30 | 1984-10-11 | Fujitsu Ltd | 半導体受光素子の特性測定方法 |
JPS6168324U (en, 2012) * | 1984-10-12 | 1986-05-10 | ||
JPS62145356U (en, 2012) * | 1986-03-07 | 1987-09-12 | ||
JPS62261187A (ja) * | 1986-05-07 | 1987-11-13 | Ricoh Co Ltd | 半導体レ−ザ−ユニツト |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007208253A (ja) * | 2006-01-09 | 2007-08-16 | Samsung Electronics Co Ltd | イメージセンサテスト方法及びその装置 |
JP2009195968A (ja) * | 2008-02-25 | 2009-09-03 | Mitsubishi Electric Corp | レーザスクライブ装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH0617292Y2 (ja) | 1994-05-02 |
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