JPH0187549U - - Google Patents
Info
- Publication number
- JPH0187549U JPH0187549U JP18482687U JP18482687U JPH0187549U JP H0187549 U JPH0187549 U JP H0187549U JP 18482687 U JP18482687 U JP 18482687U JP 18482687 U JP18482687 U JP 18482687U JP H0187549 U JPH0187549 U JP H0187549U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- dam
- sealing material
- semiconductor
- surround
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000003566 sealing material Substances 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
第１図Ａ乃至Ｄは本考案に係る半導体装置の一
実施例を説明するための図であり、第２図は従来
例を説明するための図である。
１……絶縁基板、２……スルーホール、３……
金属膜、４，４′……半田層、５……半導体素子
、６，６′……金属細線、７……封止材料。
1A to 1D are diagrams for explaining an embodiment of a semiconductor device according to the present invention, and FIG. 2 is a diagram for explaining a conventional example. 1...Insulating board, 2...Through hole, 3...
Metal film, 4, 4'... Solder layer, 5... Semiconductor element, 6, 6'... Metal thin wire, 7... Sealing material.
Claims (1)
素子を囲むように配置された封止材料流れ止め用
のダムを備え、このダム内に前記封止材料を充填
して前記半導体素子を封止してなる半導体装置に
おいて、前記ダムが前記半導体素子の接着に用い
られる半田材料と同じ材料からなることを特徴と
する半導体装置。 A semiconductor element bonded on an insulating substrate, a dam for preventing the flow of sealing material arranged to surround the semiconductor element, and the semiconductor element is sealed by filling the dam with the sealing material. 1. A semiconductor device characterized in that said dam is made of the same material as a solder material used for bonding said semiconductor element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18482687U JPH0187549U (en) | 1987-12-03 | 1987-12-03 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18482687U JPH0187549U (en) | 1987-12-03 | 1987-12-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0187549U true JPH0187549U (en) | 1989-06-09 |
Family
ID=31476163
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18482687U Pending JPH0187549U (en) | 1987-12-03 | 1987-12-03 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0187549U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014220305A (en) * | 2013-05-06 | 2014-11-20 | 株式会社デンソー | Multilayer substrate and electronic device using the same, method of manufacturing electronic device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5916351A (en) * | 1982-07-19 | 1984-01-27 | Matsushita Electric Ind Co Ltd | Electronic circuit device and manufacture thereof |
-
1987
- 1987-12-03 JP JP18482687U patent/JPH0187549U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5916351A (en) * | 1982-07-19 | 1984-01-27 | Matsushita Electric Ind Co Ltd | Electronic circuit device and manufacture thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014220305A (en) * | 2013-05-06 | 2014-11-20 | 株式会社デンソー | Multilayer substrate and electronic device using the same, method of manufacturing electronic device |
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