JPH0187154U - - Google Patents
Info
- Publication number
- JPH0187154U JPH0187154U JP18315787U JP18315787U JPH0187154U JP H0187154 U JPH0187154 U JP H0187154U JP 18315787 U JP18315787 U JP 18315787U JP 18315787 U JP18315787 U JP 18315787U JP H0187154 U JPH0187154 U JP H0187154U
- Authority
- JP
- Japan
- Prior art keywords
- evaporation source
- introduction pipe
- tip
- center
- inert gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 claims 3
- 239000007789 gas Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
第１図は、本考案の真空拡散蒸着装置を示す図
、第２図は、従来の真空拡散蒸着装置を示す図で
ある。
尚、図中１は真空槽、２は不活性ガスの導入パ
イプ、２１は導入パイプ先端、３は被蒸着物、４
は蒸発源、Ｌは鉛直線である。
FIG. 1 is a diagram showing a vacuum diffusion deposition apparatus of the present invention, and FIG. 2 is a diagram showing a conventional vacuum diffusion deposition apparatus. In the figure, 1 is a vacuum chamber, 2 is an inert gas introduction pipe, 21 is the tip of the introduction pipe, 3 is a material to be deposited, and 4
is the evaporation source, and L is the vertical line.
Claims (1)
と蒸発源とを配置し、該蒸発源の加熱により蒸発
源内の金属を蒸発拡散させて該被蒸着物に蒸着さ
せるものであつて、 前記不活性ガスの導入パイプ先端を前記被蒸着
物の下方に設け、該導入パイプ先端と該被蒸着物
の間に蒸発源を設けるとともに、該被蒸着物の中
心と、該蒸発源の中心と、該導入パイプ先端の中
心とを同一鉛直線上に配置して蒸着させる真空拡
散蒸着装置。 (2) 前記真空槽内は１×１０―４〜５×１０―
５Ｔｏｒｒのガス圧となつていることを特徴とす
る実用新案登録請求の範囲第１項記載の真空拡散
蒸着装置。[Claims for Utility Model Registration] (1) An object to be evaporated and an evaporation source are placed in a vacuum chamber into which an inert gas is introduced, and the metal in the evaporation source is evaporated and diffused by heating the evaporation source to deposit the object. The inert gas introduction pipe is provided below the object to be vapor deposited, an evaporation source is provided between the tip of the introduction pipe and the object to be vapor deposited, and the tip of the inert gas introduction pipe is provided below the object to be vapor deposited. A vacuum diffusion vapor deposition apparatus that performs vapor deposition by arranging the center, the center of the evaporation source, and the center of the tip of the introduction pipe on the same vertical line. (2) The inside of the vacuum chamber is 1×10−4 to 5 ×10−
The vacuum diffusion vapor deposition apparatus according to claim 1, which is characterized in that the gas pressure is 5 Torr .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18315787U JPH0187154U (en) | 1987-12-01 | 1987-12-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18315787U JPH0187154U (en) | 1987-12-01 | 1987-12-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0187154U true JPH0187154U (en) | 1989-06-08 |
Family
ID=31474589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18315787U Pending JPH0187154U (en) | 1987-12-01 | 1987-12-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0187154U (en) |
-
1987
- 1987-12-01 JP JP18315787U patent/JPH0187154U/ja active Pending