JPH0186307U - - Google Patents
Info
- Publication number
- JPH0186307U JPH0186307U JP18021587U JP18021587U JPH0186307U JP H0186307 U JPH0186307 U JP H0186307U JP 18021587 U JP18021587 U JP 18021587U JP 18021587 U JP18021587 U JP 18021587U JP H0186307 U JPH0186307 U JP H0186307U
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- barrier diodes
- hybrid
- shot
- cutoff
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 1
Landscapes
- Superheterodyne Receivers (AREA)
Description
第１図はこの考案によるモノリシツク化マイク
ロ波集積回路ミキサの構成概念図、第２図はこの
考案によるモノリシツク化マイクロ波集積回路ミ
キサの回路パターン図、第３図はこの考案の基礎
となるモノリシツク化マイクロ波集積回路ミキサ
の構成概念図、第４図はこの考案の基礎となるモ
ノリシツク化マイクロ波集積回路ミキサの回路パ
ターン図である。
図中、１は９０°ハイブリツド、２は中間周波
シヨート回路、３は２つのシヨツトキバリアダイ
オード、４はＲＦ信号、局発信号シヨート回路、
５はガリウムヒ素を基板材とする誘電体基板、６
はＤＣ遮断回路、７はＤＣシヨート回路、端子１
はＲＦ信号端子、端子２は局発信号端子、端子３
は中間周波端子、端子４はＤＣバイアス端子であ
る。なお、図中同一あるいは相当部分には同一符
号を付して示してある。
Figure 1 is a conceptual diagram of the configuration of a monolithic microwave integrated circuit mixer based on this invention, Figure 2 is a circuit pattern diagram of a monolithic microwave integrated circuit mixer based on this invention, and Figure 3 is a monolithic structure that is the basis of this invention. FIG. 4 is a conceptual diagram of the structure of a microwave integrated circuit mixer. FIG. 4 is a circuit pattern diagram of a monolithic microwave integrated circuit mixer which is the basis of this invention. In the figure, 1 is a 90° hybrid, 2 is an intermediate frequency shot circuit, 3 is two shot barrier diodes, 4 is an RF signal, a local signal shot circuit,
5 is a dielectric substrate whose substrate material is gallium arsenide; 6
is DC cutoff circuit, 7 is DC short circuit, terminal 1
is the RF signal terminal, terminal 2 is the local signal terminal, terminal 3
is an intermediate frequency terminal, and terminal 4 is a DC bias terminal. It should be noted that the same or corresponding parts in the figures are indicated by the same reference numerals.
Claims (1)
記誘電体基板の一方の面の一部に設けられたスト
リツプ線路で形成されるモノリシツク化マイクロ
波集積回路で、２つの入力端子を有する９０°ハ
イブリツドと、この９０°ハイブリツドに互いに
逆向きに接続された２つのシヨツトキバリアダイ
オードと、この２つのシヨツトキバリアダイオー
ドの９０°ハイブリツド側に接続された中間周波
シヨート回路と、２つのシヨツトキバリアダイオ
ードの一方側に接続されたＲＦ信号、局発信号シ
ヨート回路と、２つのシヨツトキバリアダイオー
ドのＲＦ信号、局発信号シヨート回路側を接続し
た出力端子から成るモノリシツク化マイクロ波集
積回路バランス型ミキサにおいて、９０°ハイブ
リツドに対して互いに逆向きに接続された２つの
シヨツトキバリアダイオードの間に２つのＤＣ遮
断回路を設け、一方のシヨツトキバリアダイオー
ドのＤＣ遮断回路を短絡し、他方のシヨツトキバ
リアダイオードのＤＣ遮断回路側よりＤＣバイア
スを印加し、２つのシヨツトキバリアダイオード
に同一極性のＤＣバイアスを印加するように構成
したことを特徴とするモノリシツク化マイクロ波
集積回路ミキサ。 This is a monolithic microwave integrated circuit formed by a dielectric substrate made of gallium arsenide and a strip line provided on a part of one surface of the dielectric substrate, and is a 90° hybrid circuit having two input terminals. , two shot barrier diodes connected to the 90° hybrid in opposite directions, an intermediate frequency short circuit connected to the 90° hybrid side of these two shot barrier diodes, and two shot barrier diodes. In a monolithic microwave integrated circuit balanced mixer consisting of an RF signal and a local oscillator signal short circuit connected to one side of the mixer, and an output terminal to which the RF signal and local oscillator signal short circuit side of two shot barrier diodes are connected. , two DC cutoff circuits are provided between two shottock barrier diodes connected in opposite directions to each other with respect to the 90° hybrid, the DC cutoff circuit of one shottock barrier diode is short-circuited, and the DC cutoff circuit of one shottock barrier diode is short-circuited. A monolithic microwave integrated circuit mixer characterized in that a DC bias is applied from the DC cutoff circuit side of the diode, and a DC bias of the same polarity is applied to two shot barrier diodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18021587U JPH0186307U (en) | 1987-11-26 | 1987-11-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18021587U JPH0186307U (en) | 1987-11-26 | 1987-11-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0186307U true JPH0186307U (en) | 1989-06-07 |
Family
ID=31471737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18021587U Pending JPH0186307U (en) | 1987-11-26 | 1987-11-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0186307U (en) |
-
1987
- 1987-11-26 JP JP18021587U patent/JPH0186307U/ja active Pending
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