JPH0158649B2 - - Google Patents

Info

Publication number
JPH0158649B2
JPH0158649B2 JP59206400A JP20640084A JPH0158649B2 JP H0158649 B2 JPH0158649 B2 JP H0158649B2 JP 59206400 A JP59206400 A JP 59206400A JP 20640084 A JP20640084 A JP 20640084A JP H0158649 B2 JPH0158649 B2 JP H0158649B2
Authority
JP
Japan
Prior art keywords
film
semiconductor
semiconductor film
manufacturing
antireflection films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59206400A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6184825A (ja
Inventor
Kazuyuki Sugahara
Tadashi Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP59206400A priority Critical patent/JPS6184825A/ja
Publication of JPS6184825A publication Critical patent/JPS6184825A/ja
Publication of JPH0158649B2 publication Critical patent/JPH0158649B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3814—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3411—
    • H10P14/3458—
    • H10P14/382—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
JP59206400A 1984-10-03 1984-10-03 半導体基板の製造方法 Granted JPS6184825A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59206400A JPS6184825A (ja) 1984-10-03 1984-10-03 半導体基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59206400A JPS6184825A (ja) 1984-10-03 1984-10-03 半導体基板の製造方法

Publications (2)

Publication Number Publication Date
JPS6184825A JPS6184825A (ja) 1986-04-30
JPH0158649B2 true JPH0158649B2 (en:Method) 1989-12-13

Family

ID=16522726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59206400A Granted JPS6184825A (ja) 1984-10-03 1984-10-03 半導体基板の製造方法

Country Status (1)

Country Link
JP (1) JPS6184825A (en:Method)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6737672B2 (en) * 2000-08-25 2004-05-18 Fujitsu Limited Semiconductor device, manufacturing method thereof, and semiconductor manufacturing apparatus

Also Published As

Publication number Publication date
JPS6184825A (ja) 1986-04-30

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term