JPH0157506B2 - - Google Patents

Info

Publication number
JPH0157506B2
JPH0157506B2 JP55033022A JP3302280A JPH0157506B2 JP H0157506 B2 JPH0157506 B2 JP H0157506B2 JP 55033022 A JP55033022 A JP 55033022A JP 3302280 A JP3302280 A JP 3302280A JP H0157506 B2 JPH0157506 B2 JP H0157506B2
Authority
JP
Japan
Prior art keywords
base
film
layer
emitter
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55033022A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56129342A (en
Inventor
Tadashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3302280A priority Critical patent/JPS56129342A/ja
Publication of JPS56129342A publication Critical patent/JPS56129342A/ja
Publication of JPH0157506B2 publication Critical patent/JPH0157506B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP3302280A 1980-03-12 1980-03-12 Semiconductor integrated circuit device Granted JPS56129342A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3302280A JPS56129342A (en) 1980-03-12 1980-03-12 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3302280A JPS56129342A (en) 1980-03-12 1980-03-12 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS56129342A JPS56129342A (en) 1981-10-09
JPH0157506B2 true JPH0157506B2 (zh) 1989-12-06

Family

ID=12375163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3302280A Granted JPS56129342A (en) 1980-03-12 1980-03-12 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS56129342A (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6218069A (ja) * 1985-07-16 1987-01-27 Toshiba Corp 半導体装置
JPH0221639A (ja) * 1988-07-08 1990-01-24 Rohm Co Ltd 半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117579A (en) * 1976-03-30 1977-10-03 Nec Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117579A (en) * 1976-03-30 1977-10-03 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPS56129342A (en) 1981-10-09

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