JPH0157491B2 - - Google Patents
Info
- Publication number
- JPH0157491B2 JPH0157491B2 JP17765585A JP17765585A JPH0157491B2 JP H0157491 B2 JPH0157491 B2 JP H0157491B2 JP 17765585 A JP17765585 A JP 17765585A JP 17765585 A JP17765585 A JP 17765585A JP H0157491 B2 JPH0157491 B2 JP H0157491B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- film
- laser beam
- substrate
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 230000002265 prevention Effects 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 22
- 229920005591 polysilicon Polymers 0.000 description 22
- 229910052581 Si3N4 Inorganic materials 0.000 description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 20
- 238000001953 recrystallisation Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005224 laser annealing Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17765585A JPS6239009A (ja) | 1985-08-14 | 1985-08-14 | Ｓｏｉ基板形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17765585A JPS6239009A (ja) | 1985-08-14 | 1985-08-14 | Ｓｏｉ基板形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6239009A JPS6239009A (ja) | 1987-02-20 |
| JPH0157491B2 true JPH0157491B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-12-06 |
Family
ID=16034784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17765585A Granted JPS6239009A (ja) | 1985-08-14 | 1985-08-14 | Ｓｏｉ基板形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6239009A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105161498B (zh) * | 2015-08-03 | 2017-09-19 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板以及显示装置 |
-
1985
- 1985-08-14 JP JP17765585A patent/JPS6239009A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6239009A (ja) | 1987-02-20 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |