JPH0155589B2 - - Google Patents
Info
- Publication number
- JPH0155589B2 JPH0155589B2 JP57057269A JP5726982A JPH0155589B2 JP H0155589 B2 JPH0155589 B2 JP H0155589B2 JP 57057269 A JP57057269 A JP 57057269A JP 5726982 A JP5726982 A JP 5726982A JP H0155589 B2 JPH0155589 B2 JP H0155589B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- optical waveguide
- region
- optical
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57057269A JPS58175885A (ja) | 1982-04-08 | 1982-04-08 | 半導体レーザ装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57057269A JPS58175885A (ja) | 1982-04-08 | 1982-04-08 | 半導体レーザ装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58175885A JPS58175885A (ja) | 1983-10-15 |
| JPH0155589B2 true JPH0155589B2 (enExample) | 1989-11-27 |
Family
ID=13050805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57057269A Granted JPS58175885A (ja) | 1982-04-08 | 1982-04-08 | 半導体レーザ装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58175885A (enExample) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5121487A (ja) * | 1974-08-16 | 1976-02-20 | Hitachi Ltd | Handotaireeza |
| JPS52144989A (en) * | 1976-05-28 | 1977-12-02 | Hitachi Ltd | Semiconductor light emitting device |
| JPS53144693A (en) * | 1977-05-23 | 1978-12-16 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser |
-
1982
- 1982-04-08 JP JP57057269A patent/JPS58175885A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58175885A (ja) | 1983-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2008113041A (ja) | 導波管 | |
| US20010014109A1 (en) | Single-transverse-mode laser diode with multi-mode waveguide region and manufacturing method of the same | |
| JPH04397B2 (enExample) | ||
| JPH01319986A (ja) | 半導体レーザ装置 | |
| JPS6328520B2 (enExample) | ||
| JPS6114787A (ja) | 分布帰還型半導体レ−ザ | |
| JP5163355B2 (ja) | 半導体レーザ装置 | |
| US6707835B2 (en) | Process for producing semiconductor laser element including S-ARROW structure formed by etching through mask having pair of parallel openings | |
| JPH0155589B2 (enExample) | ||
| JP4033822B2 (ja) | Dbr型波長可変光源 | |
| JPH0147031B2 (enExample) | ||
| CN115336123A (zh) | 电吸收调制激光器 | |
| JPH0230195B2 (enExample) | ||
| CN111971861B (zh) | 一种光学集成芯片 | |
| JPS60165782A (ja) | 半導体レ−ザ | |
| JP3797735B2 (ja) | 光集積回路およびその製造方法 | |
| JPS596588A (ja) | 半導体レ−ザ | |
| JPS5972787A (ja) | 半導体レ−ザ | |
| JPS616886A (ja) | 分布帰還形半導体レ−ザ | |
| JP2687404B2 (ja) | 分布帰還形半導対レーザ | |
| JPS60165780A (ja) | 半導体レ−ザ装置 | |
| JPH02105489A (ja) | 半導体レーザの製造方法 | |
| JPS6223186A (ja) | 分布帰還型半導体レ−ザ | |
| JP2001094193A (ja) | 変調器付き半導体レーザ、及びその製造方法 | |
| JPH084178B2 (ja) | 分布ブラツグ反射型半導体レ−ザの製造方法 |