JPH0150006B2 - - Google Patents

Info

Publication number

JPH0150006B2

JPH0150006B2 JP58501822A JP50182283A JPH0150006B2 JP H0150006 B2 JPH0150006 B2 JP H0150006B2 JP 58501822 A JP58501822 A JP 58501822A JP 50182283 A JP50182283 A JP 50182283A JP H0150006 B2 JPH0150006 B2 JP H0150006B2

Authority

JP

Japan

Prior art keywords

layer

aluminum

magnetic

cavity

permalloy

Prior art date

1983-04-12

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

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• 239000000463 material Substances 0.000 description 56
• 229910052782 aluminium Inorganic materials 0.000 description 52
• XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 52
• 238000000034 method Methods 0.000 description 43
• 229910052751 metal Inorganic materials 0.000 description 32
• 239000002184 metal Substances 0.000 description 32
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 26
• 229910000889 permalloy Inorganic materials 0.000 description 26
• 239000000758 substrate Substances 0.000 description 18
• 239000010409 thin film Substances 0.000 description 18
• 239000000696 magnetic material Substances 0.000 description 16
• 239000000377 silicon dioxide Substances 0.000 description 13
• 235000012239 silicon dioxide Nutrition 0.000 description 13
• 238000000151 deposition Methods 0.000 description 10
• HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
• 238000002048 anodisation reaction Methods 0.000 description 9
• 238000004519 manufacturing process Methods 0.000 description 9
• 230000008021 deposition Effects 0.000 description 8
• 239000007769 metal material Substances 0.000 description 8
• TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 8
• 229920002120 photoresistant polymer Polymers 0.000 description 8
• 238000004804 winding Methods 0.000 description 8
• 238000001020 plasma etching Methods 0.000 description 5
• 238000004544 sputter deposition Methods 0.000 description 5
• NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
• 229910004298 SiO 2 Inorganic materials 0.000 description 4
• 238000007743 anodising Methods 0.000 description 4
• 239000011651 chromium Substances 0.000 description 4
• 238000005530 etching Methods 0.000 description 4
• PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
• 229910052681 coesite Inorganic materials 0.000 description 3
• 150000001875 compounds Chemical class 0.000 description 3
• 229910052906 cristobalite Inorganic materials 0.000 description 3
• 238000005566 electron beam evaporation Methods 0.000 description 3
• 239000011521 glass Substances 0.000 description 3
• 230000008018 melting Effects 0.000 description 3
• 238000002844 melting Methods 0.000 description 3
• 230000003647 oxidation Effects 0.000 description 3
• 238000007254 oxidation reaction Methods 0.000 description 3
• 235000011121 sodium hydroxide Nutrition 0.000 description 3
• 229910052682 stishovite Inorganic materials 0.000 description 3
• 229910052905 tridymite Inorganic materials 0.000 description 3
• 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
• VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
• 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
• 230000008901 benefit Effects 0.000 description 2
• 229910052804 chromium Inorganic materials 0.000 description 2
• 230000000694 effects Effects 0.000 description 2
• 239000000945 filler Substances 0.000 description 2
• 239000010408 film Substances 0.000 description 2
• 229910000765 intermetallic Inorganic materials 0.000 description 2
• XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
• 230000004048 modification Effects 0.000 description 2
• 238000012986 modification Methods 0.000 description 2
• 230000008569 process Effects 0.000 description 2
• 238000000992 sputter etching Methods 0.000 description 2
• GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 description 1
• 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
• 229910003271 Ni-Fe Inorganic materials 0.000 description 1
• 230000004888 barrier function Effects 0.000 description 1
• 238000003486 chemical etching Methods 0.000 description 1
• 230000000295 complement effect Effects 0.000 description 1
• 239000011231 conductive filler Substances 0.000 description 1
• 239000004020 conductor Substances 0.000 description 1
• 229910052593 corundum Inorganic materials 0.000 description 1
• 230000006378 damage Effects 0.000 description 1
• 238000009792 diffusion process Methods 0.000 description 1
• 230000001939 inductive effect Effects 0.000 description 1
• UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical class [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
• 239000012762 magnetic filler Substances 0.000 description 1
• 230000000873 masking effect Effects 0.000 description 1
• 239000000155 melt Substances 0.000 description 1
• 150000002739 metals Chemical class 0.000 description 1
• 239000000203 mixture Substances 0.000 description 1
• 230000005855 radiation Effects 0.000 description 1
• 238000001552 radio frequency sputter deposition Methods 0.000 description 1
• 238000001953 recrystallisation Methods 0.000 description 1
• 230000007704 transition Effects 0.000 description 1
• 229910001845 yogo sapphire Inorganic materials 0.000 description 1