JPH0147019B2 - - Google Patents

Info

Publication number
JPH0147019B2
JPH0147019B2 JP59063567A JP6356784A JPH0147019B2 JP H0147019 B2 JPH0147019 B2 JP H0147019B2 JP 59063567 A JP59063567 A JP 59063567A JP 6356784 A JP6356784 A JP 6356784A JP H0147019 B2 JPH0147019 B2 JP H0147019B2
Authority
JP
Japan
Prior art keywords
substrate
dielectric
semiconductor
electrically insulated
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59063567A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60207363A (ja
Inventor
Toshiro Usami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59063567A priority Critical patent/JPS60207363A/ja
Publication of JPS60207363A publication Critical patent/JPS60207363A/ja
Priority to US07/206,903 priority patent/US4879585A/en
Publication of JPH0147019B2 publication Critical patent/JPH0147019B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H10P90/1912—
    • H10W10/061—
    • H10W10/181—

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59063567A 1984-03-31 1984-03-31 半導体装置 Granted JPS60207363A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP59063567A JPS60207363A (ja) 1984-03-31 1984-03-31 半導体装置
US07/206,903 US4879585A (en) 1984-03-31 1988-06-15 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59063567A JPS60207363A (ja) 1984-03-31 1984-03-31 半導体装置

Publications (2)

Publication Number Publication Date
JPS60207363A JPS60207363A (ja) 1985-10-18
JPH0147019B2 true JPH0147019B2 (enExample) 1989-10-12

Family

ID=13232945

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59063567A Granted JPS60207363A (ja) 1984-03-31 1984-03-31 半導体装置

Country Status (1)

Country Link
JP (1) JPS60207363A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770612B2 (ja) * 1987-12-14 1995-07-31 株式会社日立製作所 半導体集積回路
US5017999A (en) * 1989-06-30 1991-05-21 Honeywell Inc. Method for forming variable width isolation structures

Also Published As

Publication number Publication date
JPS60207363A (ja) 1985-10-18

Similar Documents

Publication Publication Date Title
US6818496B2 (en) Silicon on insulator DRAM process utilizing both fully and partially depleted devices
US4763183A (en) Semiconductor-on-insulator (SOI) devices and SOI IC fabrication method
JPH02256267A (ja) 薄膜ｓｏｉ　ｃ―ｍｏｓ素子及びその製造方法
EP0191037B1 (en) Semiconductor-on-insulator (soi) devices and soi ic fabrication method
JPS6038866A (ja) 金属―酸化膜―半導体集積回路の製造方法
EP0031367A1 (en) METHOD FOR FORMING A VOLTAGE INVARIANT CAPACITOR FOR A MOS INTEGRATED CIRCUIT DEVICE.
JP2958695B2 (ja) 半導体素子の製造方法
US4879585A (en) Semiconductor device
JPS58220445A (ja) 半導体集積回路の製造方法
US4473940A (en) Method of producing a semiconductor device
JPS60138971A (ja) 半導体装置の製造方法
JPH0147019B2 (enExample)
KR100305402B1 (ko) 반도체소자의 제조방법
JPH0210730A (ja) 集積回路チップ上の電界効果トランジスタ用のフィールド・アイソレーション形成方法と構造
KR100510772B1 (ko) 반도체용 실리콘 온 인슐레이터 기판의 형성 방법
KR0179794B1 (ko) 반도체 소자의 웰 형성방법
JPS5923476B2 (ja) 半導体装置の製造方法
JPS6039848A (ja) 半導体装置の製造方法
JPH0510827B2 (enExample)
JPH04252072A (ja) 半導体装置
KR100226784B1 (ko) 반도체 소자의 제조방법
US20250379099A1 (en) Method for forming a wafer structure and wafer structure formed by the same
JP4064682B2 (ja) 集積回路
JPS60117658A (ja) Ｍｏｓダイナミツクメモリ装置の製造方法
KR960013507B1 (ko) Sram의 제조방법

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term