JPH0142147B2 - - Google Patents
Info
- Publication number
- JPH0142147B2 JPH0142147B2 JP15206680A JP15206680A JPH0142147B2 JP H0142147 B2 JPH0142147 B2 JP H0142147B2 JP 15206680 A JP15206680 A JP 15206680A JP 15206680 A JP15206680 A JP 15206680A JP H0142147 B2 JPH0142147 B2 JP H0142147B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- gate
- poly
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 claims description 49
- 239000011229 interlayer Substances 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 27
- 229910004298 SiO 2 Inorganic materials 0.000 description 22
- 230000002093 peripheral effect Effects 0.000 description 11
- 238000005530 etching Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15206680A JPS5776876A (en) | 1980-10-31 | 1980-10-31 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15206680A JPS5776876A (en) | 1980-10-31 | 1980-10-31 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5776876A JPS5776876A (en) | 1982-05-14 |
| JPH0142147B2 true JPH0142147B2 (fr) | 1989-09-11 |
Family
ID=15532303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15206680A Granted JPS5776876A (en) | 1980-10-31 | 1980-10-31 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5776876A (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4613956A (en) * | 1983-02-23 | 1986-09-23 | Texas Instruments Incorporated | Floating gate memory with improved dielectric |
| USRE34535E (en) * | 1983-02-23 | 1994-02-08 | Texas Instruments Incorporated | Floating gate memory with improved dielectric |
| JPS6273774A (ja) * | 1985-09-27 | 1987-04-04 | Toshiba Corp | 半導体記憶装置の製造方法 |
| JPH088310B2 (ja) * | 1987-03-18 | 1996-01-29 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
-
1980
- 1980-10-31 JP JP15206680A patent/JPS5776876A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5776876A (en) | 1982-05-14 |
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