JPH0139997B2 - - Google Patents

Info

Publication number
JPH0139997B2
JPH0139997B2 JP6387681A JP6387681A JPH0139997B2 JP H0139997 B2 JPH0139997 B2 JP H0139997B2 JP 6387681 A JP6387681 A JP 6387681A JP 6387681 A JP6387681 A JP 6387681A JP H0139997 B2 JPH0139997 B2 JP H0139997B2
Authority
JP
Japan
Prior art keywords
melt
single crystal
crystal growth
ampoule
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6387681A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57179093A (en
Inventor
Kyoichi Kinoshita
Shintaro Myazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6387681A priority Critical patent/JPS57179093A/ja
Publication of JPS57179093A publication Critical patent/JPS57179093A/ja
Publication of JPH0139997B2 publication Critical patent/JPH0139997B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP6387681A 1981-04-27 1981-04-27 Method and apparatus for manufacturing single crystal of compound semiconductor Granted JPS57179093A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6387681A JPS57179093A (en) 1981-04-27 1981-04-27 Method and apparatus for manufacturing single crystal of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6387681A JPS57179093A (en) 1981-04-27 1981-04-27 Method and apparatus for manufacturing single crystal of compound semiconductor

Publications (2)

Publication Number Publication Date
JPS57179093A JPS57179093A (en) 1982-11-04
JPH0139997B2 true JPH0139997B2 (cg-RX-API-DMAC7.html) 1989-08-24

Family

ID=13241929

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6387681A Granted JPS57179093A (en) 1981-04-27 1981-04-27 Method and apparatus for manufacturing single crystal of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS57179093A (cg-RX-API-DMAC7.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61201690A (ja) * 1985-03-04 1986-09-06 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体単結晶の育成方法および育成装置

Also Published As

Publication number Publication date
JPS57179093A (en) 1982-11-04

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