JPH0136710B2 - - Google Patents

Info

Publication number
JPH0136710B2
JPH0136710B2 JP57201292A JP20129282A JPH0136710B2 JP H0136710 B2 JPH0136710 B2 JP H0136710B2 JP 57201292 A JP57201292 A JP 57201292A JP 20129282 A JP20129282 A JP 20129282A JP H0136710 B2 JPH0136710 B2 JP H0136710B2
Authority
JP
Japan
Prior art keywords
film
silicon
layer
oxide film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57201292A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5989458A (ja
Inventor
Tadashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57201292A priority Critical patent/JPS5989458A/ja
Publication of JPS5989458A publication Critical patent/JPS5989458A/ja
Publication of JPH0136710B2 publication Critical patent/JPH0136710B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP57201292A 1982-11-15 1982-11-15 半導体装置の製造方法 Granted JPS5989458A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57201292A JPS5989458A (ja) 1982-11-15 1982-11-15 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57201292A JPS5989458A (ja) 1982-11-15 1982-11-15 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5989458A JPS5989458A (ja) 1984-05-23
JPH0136710B2 true JPH0136710B2 (en:Method) 1989-08-02

Family

ID=16438557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57201292A Granted JPS5989458A (ja) 1982-11-15 1982-11-15 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5989458A (en:Method)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0611053B2 (ja) * 1984-12-20 1994-02-09 三菱電機株式会社 半導体装置の製造方法
JPH0611055B2 (ja) * 1985-11-13 1994-02-09 三菱電機株式会社 半導体装置の製造方法
US4933295A (en) * 1987-05-08 1990-06-12 Raytheon Company Method of forming a bipolar transistor having closely spaced device regions
US5064773A (en) * 1988-12-27 1991-11-12 Raytheon Company Method of forming bipolar transistor having closely spaced device regions

Also Published As

Publication number Publication date
JPS5989458A (ja) 1984-05-23

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