JPH0135774B2 - - Google Patents
Info
- Publication number
- JPH0135774B2 JPH0135774B2 JP4806182A JP4806182A JPH0135774B2 JP H0135774 B2 JPH0135774 B2 JP H0135774B2 JP 4806182 A JP4806182 A JP 4806182A JP 4806182 A JP4806182 A JP 4806182A JP H0135774 B2 JPH0135774 B2 JP H0135774B2
- Authority
- JP
- Japan
- Prior art keywords
- chlorosilane
- hydrogen
- stage
- condensation
- freezing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims description 97
- 239000005046 Chlorosilane Substances 0.000 claims description 96
- 238000000034 method Methods 0.000 claims description 58
- 239000001257 hydrogen Substances 0.000 claims description 47
- 229910052739 hydrogen Inorganic materials 0.000 claims description 47
- 239000007789 gas Substances 0.000 claims description 44
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 43
- 238000009833 condensation Methods 0.000 claims description 41
- 230000005494 condensation Effects 0.000 claims description 41
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 39
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 39
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 39
- 239000000203 mixture Substances 0.000 claims description 39
- 230000008569 process Effects 0.000 claims description 33
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 30
- 238000004519 manufacturing process Methods 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 28
- 238000007710 freezing Methods 0.000 claims description 25
- 230000008014 freezing Effects 0.000 claims description 25
- 238000004821 distillation Methods 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 8
- 230000001172 regenerating effect Effects 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000004064 recycling Methods 0.000 claims description 2
- 230000009467 reduction Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000000356 contaminant Substances 0.000 description 10
- 238000000746 purification Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 230000008929 regeneration Effects 0.000 description 8
- 238000011069 regeneration method Methods 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 5
- 238000009835 boiling Methods 0.000 description 5
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- 229910003902 SiCl 4 Inorganic materials 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- 229920000548 poly(silane) polymer Polymers 0.000 description 4
- 238000000605 extraction Methods 0.000 description 3
- 230000036512 infertility Effects 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000010792 warming Methods 0.000 description 3
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 2
- 229910003822 SiHCl3 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 150000001805 chlorine compounds Chemical class 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 238000003889 chemical engineering Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000003134 recirculating effect Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4806182A JPS58167418A (ja) | 1982-03-25 | 1982-03-25 | 半導体多結晶シリコンの製造プロセスにおけるクロルシランおよび水素の再生法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4806182A JPS58167418A (ja) | 1982-03-25 | 1982-03-25 | 半導体多結晶シリコンの製造プロセスにおけるクロルシランおよび水素の再生法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58167418A JPS58167418A (ja) | 1983-10-03 |
| JPH0135774B2 true JPH0135774B2 (enrdf_load_html_response) | 1989-07-27 |
Family
ID=12792828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4806182A Granted JPS58167418A (ja) | 1982-03-25 | 1982-03-25 | 半導体多結晶シリコンの製造プロセスにおけるクロルシランおよび水素の再生法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58167418A (enrdf_load_html_response) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1045077C (zh) * | 1995-09-29 | 1999-09-15 | 中国科学院山西煤炭化学研究所 | 碳化硅纤维生产中的尾气回收方法及装置 |
| JP4869671B2 (ja) * | 2004-10-05 | 2012-02-08 | 株式会社トクヤマ | シリコンの製造方法 |
-
1982
- 1982-03-25 JP JP4806182A patent/JPS58167418A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58167418A (ja) | 1983-10-03 |
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