JPH01318228A - Crystal growth method of semiconductor thin film - Google Patents
Crystal growth method of semiconductor thin filmInfo
- Publication number
- JPH01318228A JPH01318228A JP15013788A JP15013788A JPH01318228A JP H01318228 A JPH01318228 A JP H01318228A JP 15013788 A JP15013788 A JP 15013788A JP 15013788 A JP15013788 A JP 15013788A JP H01318228 A JPH01318228 A JP H01318228A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- gaas
- semiconductor thin
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 239000010409 thin film Substances 0.000 title claims abstract description 21
- 238000002109 crystal growth method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000013078 crystal Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 19
- 230000007547 defect Effects 0.000 abstract description 7
- 238000000137 annealing Methods 0.000 abstract description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、半導体薄膜の結晶成長方法にかかり、特に無
極性半導体基板上に異種の有極性半導体薄膜をエピタキ
シャル成長させる方法に関する。[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention relates to a method for growing crystals of a semiconductor thin film, and more particularly to a method for epitaxially growing a different type of polar semiconductor thin film on a non-polar semiconductor substrate. .
（従来の技術）
近年、シリコン基板上にＧａＡｓなと他の半導体を成長
させるヘテロエピタキシーと呼ばれる技術が、低価格化
、大面積化の利点に加え、電子デバイスと光デバイスの
モノリシックＩＣ化の可能性の点から注目されている。(Conventional technology) In recent years, a technology called heteroepitaxy, in which GaAs and other semiconductors are grown on silicon substrates, has the advantages of lower costs and larger areas, as well as the possibility of monolithic ICs for electronic and optical devices. It is attracting attention from a gender perspective.
この成長方法としては、二段階成長法（Ｍ、 Ａｋｉｙ
ａｍａ ａｔ ａｌ、、 Ｊ、 ＣｒｙｓｔａｌＧｒｏ
ｗｔｈ、 ７７（１９８６）４９０））が提案されてい
るが、この成長方法においては歩留りが大きな問題点で
あった。これは基板の前処理の微妙な変化により成長す
るａａＡｓＮの膜質が大きく左右されることに原因があ
った。This growth method is a two-step growth method (M, Akiy
ama at al, J, CrystalGro
wth, 77 (1986) 490)), but the yield was a major problem with this growth method. This is because the quality of the grown aaAsN film is greatly influenced by subtle changes in the pretreatment of the substrate.
（発明が解決しようとする課題）
この様に従来の技術では、成長層の転位や欠陥などの原
因となっていた基板表面の前処理法が確立されていなか
った。(Problems to be Solved by the Invention) As described above, in the conventional technology, a pretreatment method for the substrate surface, which causes dislocations and defects in the grown layer, has not been established.
本発明は−Ｆ記事情を考慮してなされたもので、その目
的とするところは、無極性半導体基板上に転位及び欠陥
の少ない良質の有極性半導体薄膜を再現性良く成長する
方法を提供することにある。The present invention was made in consideration of the above circumstances, and its purpose is to provide a method for growing a high-quality polar semiconductor thin film with few dislocations and defects on a non-polar semiconductor substrate with good reproducibility. There is a particular thing.
（課題を解決するための手段） 本発明は半導体薄膜の結晶成長方法にかかり。 (Means for solving problems) The present invention relates to a method for growing crystals of semiconductor thin films.
無極性半導体基板上に有極性半導体薄膜を結晶成長させ
るにあたり、このｆｉ極性半導体基板上に予め無極性半
導体結晶層を成長させ、次いで前記無極性半導体結晶層
上に有極性半導体薄膜を結晶成長させることを特徴とす
る。In crystal-growing a polar semiconductor thin film on a non-polar semiconductor substrate, a non-polar semiconductor crystal layer is grown in advance on this fi polar semiconductor substrate, and then a polar semiconductor thin film is crystal-grown on the non-polar semiconductor crystal layer. It is characterized by
（作 用）
本発明によれば、無極性半導体基板上に有極性半導体薄
膜を結晶成長する際に、あらかじめ基板−ヒに無極性半
導体の清浄なエピタキシャル成長層表面を得、直ちにそ
の上ヘイｆ極性半導体薄膜を成長させることにより、転
位や欠陥が少なく、表面モホロジーの良好な半導体薄膜
を再現性良く得ることが可能となる。さらに、この無極
性半導体結晶）１４は、基板と同一材料で構成すると、
−層良好な結果が得られる。(Function) According to the present invention, when crystal-growing a polar semiconductor thin film on a non-polar semiconductor substrate, a clean epitaxial growth layer surface of a non-polar semiconductor is obtained on the substrate in advance, and then the surface of the non-polar semiconductor layer is immediately grown. By growing a semiconductor thin film, it becomes possible to obtain a semiconductor thin film with few dislocations and defects and good surface morphology with good reproducibility. Furthermore, if this non-polar semiconductor crystal) 14 is made of the same material as the substrate,
- Good layer results are obtained.
（実施例） 以下、本発明の実施例について図を用いて説明する。(Example) Embodiments of the present invention will be described below with reference to the drawings.
第２図に本発明の実施例に用いた有機金属気相成長（Ｍ
ＯＣＶＤ）装置の概略構成を示す、第２図において、１
０は石英製の反応容器で、カーボンのサセプタ２０が設
置され、このサセプタ２０の上に半導体基板：３０が保
持される。基板３０は加熱装置４０により加熱される。Figure 2 shows metal organic vapor phase epitaxy (M
In Figure 2, which shows the schematic configuration of the (OCVD) apparatus, 1
0 is a reaction vessel made of quartz, in which a carbon susceptor 20 is installed, and a semiconductor substrate 30 is held on this susceptor 20. The substrate 30 is heated by a heating device 40 .
この反応容器１０にはガス導入口１１から原料ガスが導
入、され、ガス排出口１２から排出され、減圧下及び常
圧下でのエピタキシャル成長が可能となっている。A raw material gas is introduced into the reaction vessel 10 through a gas inlet 11 and discharged through a gas outlet 12, allowing epitaxial growth under reduced pressure and normal pressure.
以下この装置を用い、Ｓｉ基板上にＧａＡｓ結品を成長
させた実施例について説明する。An example in which a GaAs crystal was grown on a Si substrate using this apparatus will be described below.
第１図は本発明の一実施例に係わる結晶成長工程を示す
断面図である。本実施例では熱サイクル法を用いた。な
お、この熱サイクル法については、本出願人による特願
昭６２−６１９６９号の出願がある。FIG. 1 is a sectional view showing a crystal growth process according to an embodiment of the present invention. In this example, a thermal cycle method was used. This heat cycle method has been filed in Japanese Patent Application No. 1983-61969 by the present applicant.
まず、面方位（１００）のＳｉ基板１上に、 ５ｉｎ４
を原料ガスに用い成長温度１１００°ＣにおいてＳｉ結
晶成長層２をＩμＩ厚にエピタキシャル成長させる。つ
いで、ＳＬ基板温度を４５０℃に設定し、ＧａＡｓバッ
ファ層３を１００〜２００人厚に成長させる。続いて前
記ＧａＡｓバッファ層３にアニールを施すため、ＳＬ基
板温度を７５０℃に設定し、１０分間保持する。かかる
アニールが終了したのち基板温度を下げる。ついでＳｊ
基板１を通常の成長温度７５０℃に加熱し、１０分間程
度保持した後、前記ＧａＡｓバッファ層３上にＧａＡｓ
エピタキシャル層４を成長させる。これにより表面モホ
ロジが優れ、かつ、転位や欠陥の少い良好なＧａＡｓ薄
膜を再現性良く得ることができ、その転位密度を５ｘｌ
Ｏ’個／ｄ以下にすることができた。First, on a Si substrate 1 with a plane orientation (100), a 5in4
The Si crystal growth layer 2 is epitaxially grown to a thickness of IμI at a growth temperature of 1100°C using as a raw material gas. Next, the SL substrate temperature is set at 450° C., and the GaAs buffer layer 3 is grown to a thickness of 100 to 200 layers. Subsequently, in order to anneal the GaAs buffer layer 3, the SL substrate temperature is set at 750° C. and held for 10 minutes. After this annealing is completed, the substrate temperature is lowered. Then Sj
After heating the substrate 1 to a normal growth temperature of 750°C and holding it for about 10 minutes, GaAs is deposited on the GaAs buffer layer 3.
Epitaxial layer 4 is grown. As a result, a good GaAs thin film with excellent surface morphology and few dislocations and defects can be obtained with good reproducibility, and the dislocation density can be reduced to 5xl.
It was possible to reduce the number to O' pieces/d or less.
なお、本発明は上述した実施例に限定されるものでない
。例えば、前記単導体基板はシリコンに限定されるもの
ではなく、ゲルマニウムその他の無極性半導体を用いる
ことが出来る。また、Ｓｉ結晶の膜厚は１μｍに限るも
のではない、同様に、前記成長させる半導体薄膜は［１
ａＡｓに限るものではなく、他の■−■族半導体、ある
いは■−■族半導体を用いることが出来る。また１本発
明は他の基板面方位に対しても有効であるゆさらに、Ｇ
ａＡｓエピタキシャル層４の成長温度は７５０℃になん
ら限定されるものではな（、ＧａＡｓが最も良好に成長
する最適成長温度６００〜８００℃の範囲で適宜選択す
ればよい、また、ＧａＡｓバッファ層３の成長温度は４
５０℃に限られるものではなく、 ＧａＡｓの通常の
最 −過成長温度よりも低ければよい。但し、バッファ
１ｆ１３の成長温度がＧａＡｓの最適成長温度に近いと
バッファ層形成の効果が得られないので、一般に最適成
長温度よりも１００℃程度以上低くすればよい。Note that the present invention is not limited to the embodiments described above. For example, the single conductor substrate is not limited to silicon, and may be made of germanium or other non-polar semiconductor. Furthermore, the film thickness of the Si crystal is not limited to 1 μm; similarly, the semiconductor thin film to be grown is [1 μm].
It is not limited to aAs, but other ■-■ group semiconductors or ■-■ group semiconductors can be used. Furthermore, since the present invention is effective for other substrate surface orientations,
The growth temperature of the aAs epitaxial layer 4 is not limited to 750° C. (it may be appropriately selected within the range of 600 to 800° C. at which GaAs grows best). Growth temperature is 4
The temperature is not limited to 50°C, but may be lower than the normal maximum overgrowth temperature of GaAs. However, if the growth temperature of the buffer 1f13 is close to the optimum growth temperature of GaAs, the effect of forming a buffer layer cannot be obtained, so it is generally necessary to lower the growth temperature by about 100° C. or more than the optimum growth temperature.
さらに本発明は、通常の２段階成長法にも有効である。Furthermore, the present invention is also effective for conventional two-step growth methods.
また、 ＧａＡｓバッファ層、ＧａＡｓエピタキシャル
層の成長について、その成長方法もＭＯＣＶＤ法に限定
されるものではなく、他の気相成長法６例えば分子線エ
ピタキシー法（ＭＢＥ法）などを用いてもよく、ドーパ
ントとして何を用いたものでもかまわない。Furthermore, the growth method for the GaAs buffer layer and the GaAs epitaxial layer is not limited to the MOCVD method, and other vapor phase growth methods 6 such as molecular beam epitaxy (MBE method) may also be used. Any material may be used as a dopant.
以−Ｆ説明したように１本発明によれば無極性半導体基
板上に有極性半導体薄膜を成長させる際に。As explained below, according to the present invention, a polar semiconductor thin film is grown on a non-polar semiconductor substrate.
予め前記無極性半導体基板と同じ材料の無極性半導体結
晶を成長させることにより、転位や欠陥が少なく、表面
モホロジーのよい有極性半導体薄膜を再現性良く成長さ
せることが出来る顕著な利点がある。By growing a nonpolar semiconductor crystal made of the same material as the nonpolar semiconductor substrate in advance, there is a significant advantage that a polar semiconductor thin film with few dislocations and defects and good surface morphology can be grown with good reproducibility.
第１図は本発明の一実施例にかかる半導体薄膜の結晶成
長方法を説明するための断面図、第２図は本発明の一実
施例に用いられる成長装置を示す断面図である。
１−−−−−−−−−−シリコン基板
２−−−一一一−−−−シリコンエピタキシャル層３−
−−−−−−−−−ＧａＡｓバッファ層４−−−−−−
−一−−ＧａＡｓエピタキシャル層１０−−−−−−−
−−一反応容器
３０−−−−−−−−−−基板
代理人 弁理士 大 胡 典 夫
第 １ 図
／２：’７）’スネＬ七口
１に２＠FIG. 1 is a cross-sectional view for explaining a method of growing crystals of a semiconductor thin film according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view showing a growth apparatus used in an embodiment of the present invention. 1---------Silicon substrate 2---111---Silicon epitaxial layer 3-
----------GaAs buffer layer 4------
-1--GaAs epitaxial layer 10--
---Reaction container 30-----Substrate agent Patent attorney Norihiro Ogo No. 1 Figure/2:'7)'Sneet L Nanakuchi 1 to 2@
Claims (1)
せるにあたり、この無極性半導体基板上に予め無極性半
導体結晶層を成長させ、次いで前記無極性半導体結晶層
上に有極性半導体薄膜を結晶成長させることを特徴とす
る半導体薄膜の結晶成長方法。In crystal-growing a polar semiconductor thin film on a non-polar semiconductor substrate, a non-polar semiconductor crystal layer is grown on the non-polar semiconductor substrate in advance, and then a polar semiconductor thin film is crystal-grown on the non-polar semiconductor crystal layer. A method for growing crystals of a semiconductor thin film, characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15013788A JPH01318228A (en) | 1988-06-20 | 1988-06-20 | Crystal growth method of semiconductor thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15013788A JPH01318228A (en) | 1988-06-20 | 1988-06-20 | Crystal growth method of semiconductor thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01318228A true JPH01318228A (en) | 1989-12-22 |
Family
ID=15490298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15013788A Pending JPH01318228A (en) | 1988-06-20 | 1988-06-20 | Crystal growth method of semiconductor thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01318228A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04202097A (en) * | 1990-11-30 | 1992-07-22 | Hikari Gijutsu Kenkyu Kaihatsu Kk | Semiconductor substrate and its production |
-
1988
- 1988-06-20 JP JP15013788A patent/JPH01318228A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04202097A (en) * | 1990-11-30 | 1992-07-22 | Hikari Gijutsu Kenkyu Kaihatsu Kk | Semiconductor substrate and its production |
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