JPH047819A - Gaas thin film - Google Patents

Gaas thin film

Info

Publication number
JPH047819A
JPH047819A JP10929890A JP10929890A JPH047819A JP H047819 A JPH047819 A JP H047819A JP 10929890 A JP10929890 A JP 10929890A JP 10929890 A JP10929890 A JP 10929890A JP H047819 A JPH047819 A JP H047819A
Authority
JP
Japan
Prior art keywords
deposition
low temperature
thin film
gaas thin
3000å
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10929890A
Inventor
Yoshio Ito
Hidefumi Mori
Mitsuru Sugo
Original Assignee
Nippon Telegr & Teleph Corp <Ntt>
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegr & Teleph Corp <Ntt> filed Critical Nippon Telegr & Teleph Corp <Ntt>
Priority to JP10929890A priority Critical patent/JPH047819A/en
Publication of JPH047819A publication Critical patent/JPH047819A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To enable the title GaAs thin film high in quality developing neither cracking nor defects at all to be easily formed on an Si substrate by specifying the film thickness of a low temperature deposited layer to be 3000Å or larger.
CONSTITUTION: An Si substrate set up on an MOCVD (organic metal chemical vapor deposition) device and then vacuumized is shifted to a deposition chamber so as to be heat-treated in hydrogen atmosphere for removing the surface oxide. Later, AsH3 is led in during the cooling down process at 350-450°C for two step low temperature deposition and after waiting until the temperature is stabilized, the deposition is started by feeding trimethyl gallium. Finally, the film thickness of low temperature deposited layer is specified to be 3000Å or larger. Through these procedures, the title GaAs thin film in high quality can be formed.
COPYRIGHT: (C)1992,JPO&Japio
JP10929890A 1990-04-25 1990-04-25 Gaas thin film Pending JPH047819A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10929890A JPH047819A (en) 1990-04-25 1990-04-25 Gaas thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10929890A JPH047819A (en) 1990-04-25 1990-04-25 Gaas thin film

Publications (1)

Publication Number Publication Date
JPH047819A true JPH047819A (en) 1992-01-13

Family

ID=14506638

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10929890A Pending JPH047819A (en) 1990-04-25 1990-04-25 Gaas thin film

Country Status (1)

Country Link
JP (1) JPH047819A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5492860A (en) * 1992-04-17 1996-02-20 Fujitsu Limited Method for growing compound semiconductor layers
US9724251B2 (en) 2010-01-20 2017-08-08 The Procter & Gamble Company Refastenable absorbent article

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5492860A (en) * 1992-04-17 1996-02-20 Fujitsu Limited Method for growing compound semiconductor layers
US9724251B2 (en) 2010-01-20 2017-08-08 The Procter & Gamble Company Refastenable absorbent article

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