JPH0131288B2 - - Google Patents
Info
- Publication number
- JPH0131288B2 JPH0131288B2 JP55121563A JP12156380A JPH0131288B2 JP H0131288 B2 JPH0131288 B2 JP H0131288B2 JP 55121563 A JP55121563 A JP 55121563A JP 12156380 A JP12156380 A JP 12156380A JP H0131288 B2 JPH0131288 B2 JP H0131288B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- layer
- region corresponding
- energy ray
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
- H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55121563A JPS5745920A (en) | 1980-09-02 | 1980-09-02 | Forming method for semiconductor single crystal by energy beam emission |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55121563A JPS5745920A (en) | 1980-09-02 | 1980-09-02 | Forming method for semiconductor single crystal by energy beam emission |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5745920A JPS5745920A (en) | 1982-03-16 |
| JPH0131288B2 true JPH0131288B2 (https=) | 1989-06-26 |
Family
ID=14814324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55121563A Granted JPS5745920A (en) | 1980-09-02 | 1980-09-02 | Forming method for semiconductor single crystal by energy beam emission |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5745920A (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59121825A (ja) * | 1982-12-28 | 1984-07-14 | Agency Of Ind Science & Technol | 半導体薄膜の製造方法 |
| JPS59208820A (ja) * | 1983-05-13 | 1984-11-27 | Seiko Epson Corp | 半導体装置の製造方法 |
| JPS60246621A (ja) * | 1984-05-22 | 1985-12-06 | Agency Of Ind Science & Technol | シリコン結晶層の製造方法 |
| JPS614900A (ja) * | 1984-06-18 | 1986-01-10 | Shoketsu Kinzoku Kogyo Co Ltd | エゼクタ装置 |
| JPS614899A (ja) * | 1984-06-18 | 1986-01-10 | Shoketsu Kinzoku Kogyo Co Ltd | エゼクタ装置 |
| JPH0793263B2 (ja) * | 1987-04-23 | 1995-10-09 | 工業技術院長 | 半導体単結晶層の製造方法 |
| JPH0693428B2 (ja) * | 1987-12-04 | 1994-11-16 | 工業技術院長 | 多層半導体基板の製造方法 |
| JPH0834179B2 (ja) * | 1988-09-12 | 1996-03-29 | 工業技術院長 | 半導体単結晶薄膜の形成方法 |
-
1980
- 1980-09-02 JP JP55121563A patent/JPS5745920A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| J.APPL.PHYS=1966 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5745920A (en) | 1982-03-16 |
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