JPH01307279A - Solar cell - Google Patents

Solar cell

Info

Publication number
JPH01307279A
JPH01307279A JP63138978A JP13897888A JPH01307279A JP H01307279 A JPH01307279 A JP H01307279A JP 63138978 A JP63138978 A JP 63138978A JP 13897888 A JP13897888 A JP 13897888A JP H01307279 A JPH01307279 A JP H01307279A
Authority
JP
Japan
Prior art keywords
silicon substrate
electrode
section
picture frame
contact section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63138978A
Other languages
Japanese (ja)
Inventor
Tsuguyuki Kamiyama
嗣之 上山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP63138978A priority Critical patent/JPH01307279A/en
Publication of JPH01307279A publication Critical patent/JPH01307279A/en
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To prevent the cracking of an silicon substrate when a connector, a lead, etc. are welded, and to improve weather resistance by expanding a part of the picture frame electrode of a rear so as to correspond to the contact section of a surface electrode. CONSTITUTION:An expanding section 8 is formed to a section corresponding to the contact section 3 of a surface electrode at one end of an silicon substrate 4 in a picture frame electrode 9 on the rear 5 of the silicon substrate 4. The area of the expanding section 8 is not necessarily equalized to the area of the contact section 3, and may be brought to an extent that excess pressure is not applied to the silicon substrate 4 when the contact section 3 is pressed. Consequently, since there is no stepped section even when the contact section 3 is pressed, the silicon substrate is difficult to be cracked, and is shaped in picture frame structure, thus damaging no electrode when a cell is divided. Accordingly, the defects of the easy cracking of the silicon substrate 4 and inferior weather resistance can be removed.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は太陽電池の特KwL極の構造に関するものであ
る。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to the structure of a special KwL pole of a solar cell.

′  (従来の技術) 従来、太陽電池の裏面電極としては、シリコン基板の裏
面全面に電極を設けた全面電極と、周辺部に電極を設け
ていない部分を有するピクチュアフレーム電極とがある
(Prior Art) Conventionally, back electrodes of solar cells include full-surface electrodes in which electrodes are provided on the entire back surface of a silicon substrate, and picture frame electrodes in which electrodes are not provided in peripheral areas.

第5図〜第8図は、全面電極の一例である。第5図の平
面図において方形のシリコン基板4の表面1に櫛状電極
2が形成され、その一端には巾の広いコンタクト部8が
形成されている。第6図はその裏面を示すもので、シリ
コン基板4の裏面5の全面罠わたり裏面電極6が形成さ
れている。第7図は第5図のyl −Yl 断面を示す
ものである。
5 to 8 are examples of full-surface electrodes. In the plan view of FIG. 5, a comb-shaped electrode 2 is formed on the surface 1 of a rectangular silicon substrate 4, and a wide contact portion 8 is formed at one end thereof. FIG. 6 shows the back surface, and a back electrode 6 is formed over the entire back surface 5 of the silicon substrate 4. As shown in FIG. FIG. 7 shows the yl-Yl cross section of FIG. 5.

第8図はy2−y2断面を示す。FIG. 8 shows a y2-y2 cross section.

第9図〜第12図は、ピクチュアフレーム電極の一例で
ある。第9図の平面図において、表面の電極の配列は、
第5図の場合と同様である。第10図はその裏面を示す
もので、シリコン基板4の裏面5の外周部には余白を設
け、その内部に裏面電極7が形成されている。第11図
及び第12図は、それぞれ第9図のY8−Y8+Y4 
 y4 断面を示す。
9 to 12 are examples of picture frame electrodes. In the plan view of FIG. 9, the arrangement of the electrodes on the surface is as follows:
This is the same as the case in FIG. FIG. 10 shows the back surface of the silicon substrate 4. A margin is provided at the outer periphery of the back surface 5 of the silicon substrate 4, and a back electrode 7 is formed inside the margin. Figures 11 and 12 are Y8-Y8+Y4 in Figure 9, respectively.
y4 shows the cross section.

(発明が解決しようとする課題) 裏面に全面電極を設けた太陽電池は、個々のセルを作製
する時に電極を切断するため、その切断面から水分その
他の異物が侵入し、電極が腐蝕し易く、耐候性が悪いと
いう欠点がある。
(Problem to be solved by the invention) In solar cells with full-surface electrodes on the back side, the electrodes are cut when producing individual cells, so moisture and other foreign substances enter through the cut surfaces and the electrodes are likely to corrode. , has the disadvantage of poor weather resistance.

また、裏面にピクチュアフレーム電極を設けた太陽電池
は、表面?ff: 極のコンタクト部3にコネクタウリ
ード線等を溶接する場合、加圧されることがあり、裏面
電極7の端部がコンタクト部3の位置とずれているとき
、段差のため、加圧によりシリコン基板4が割れ易いと
いう欠点があった。
Also, does a solar cell with a picture frame electrode on the back side have a front side? ff: When welding a connector lead wire etc. to the contact part 3 of the pole, pressure may be applied, and when the end of the back electrode 7 is misaligned with the position of the contact part 3, the pressure may There was a drawback that the silicon substrate 4 was easily broken.

(l1題を解決するための手段) 本発明においては、前記の問題を解決するため、表面電
極のコンタクト部に対応するように裏面のピクチュアフ
レーム![の一部を拡張させた。
(Means for Solving Problem 11) In the present invention, in order to solve the above problem, the picture frame on the back side is arranged so as to correspond to the contact part of the front electrode. Expanded part of [.

(作用) ・ 表面電極のコンタクト部に対応する裏面には、ピクチュ
アフレーム電極の一部が拡張されているので、コンタク
ト部が加圧されても段差がないので、シリコン基板は割
れ難く、またピクチュアフレーム構造であるから、セル
を分割する場合電極が損傷されない。
(Function) - A part of the picture frame electrode is expanded on the back side corresponding to the contact part of the front electrode, so there is no step even if the contact part is pressurized, so the silicon substrate is difficult to break, and the picture frame electrode is Because of the frame structure, the electrodes are not damaged when dividing the cell.

(実施例) 第1図は本発明の一実施例の太陽電池の平面図である。(Example) FIG. 1 is a plan view of a solar cell according to an embodiment of the present invention.

その表面の構造は、第5図又は第9図に示される従来例
と同様である。第2図はその裏面を示すもので、シリコ
ン基板4の裏面5のピクチュアフレーム電極9はその一
端の表面電極のコンタクト部3に対応する部分に拡張部
8が設けられている。この拡張部分80面積は必らずし
もコンタクト部30面積と同一である会費はなく、コン
タクト部8が加圧された場合シリコン基板4に過大な圧
力が加えられない程度であればよい。第8図及び第4図
は、それぞれ第1図のY6−Y5.Y6−y6断面を示
す。
The surface structure is similar to the conventional example shown in FIG. 5 or 9. FIG. 2 shows the back side thereof, and the picture frame electrode 9 on the back side 5 of the silicon substrate 4 is provided with an extended portion 8 at one end thereof in a portion corresponding to the contact portion 3 of the front surface electrode. The area of this expanded portion 80 does not necessarily have to be the same as the area of the contact portion 30, and it is sufficient as long as it does not apply excessive pressure to the silicon substrate 4 when the contact portion 8 is pressurized. 8 and 4 are Y6-Y5. of FIG. 1, respectively. A Y6-y6 cross section is shown.

裏面電極9の形状は、メタルマスク又はフォトエツチン
グ技術を用いて容易に形成することができる。
The shape of the back electrode 9 can be easily formed using a metal mask or photoetching technique.

(発明の効果) 本発明によれば、コンタクト部にコネクタ、リード線等
を溶接する時、シリコン基板が割れ難く、また耐候性に
すぐれた太陽電池を製造することができる。
(Effects of the Invention) According to the present invention, it is possible to manufacture a solar cell in which the silicon substrate is difficult to break when welding connectors, lead wires, etc. to the contact portions and has excellent weather resistance.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例の平面図、第2図はその底面
図、@8図及び第4図はその断面図である。第5図は従
来の一例の平面図、第6図はその底面図、第7図及び第
8図はその断面図である。 第9図は従来の他の例の平面図、第10図はその底面図
、第11図及び第12図はその断面図である。 2・・・櫛状電極、8・・・コンタクト部、4・・・シ
リコン基板、8・・・拡張部、9・・・裏面1!極属2
図       m6図
FIG. 1 is a plan view of an embodiment of the present invention, FIG. 2 is a bottom view thereof, and FIGS. 8 and 4 are sectional views thereof. FIG. 5 is a plan view of a conventional example, FIG. 6 is a bottom view thereof, and FIGS. 7 and 8 are sectional views thereof. FIG. 9 is a plan view of another conventional example, FIG. 10 is a bottom view thereof, and FIGS. 11 and 12 are sectional views thereof. 2... Comb-shaped electrode, 8... Contact portion, 4... Silicon substrate, 8... Extension portion, 9... Back surface 1! Gokugen 2
Figure m6 figure

Claims (1)

【特許請求の範囲】[Claims] 1、素子の一方の面の電極の周囲に電極を設けない部分
を形成し、かつ他方の面の電極の外部との接続部に対応
する前記の一方の面の部分に前記の一方の面の電極が拡
張されている太陽電池
1. Form a part where no electrode is provided around the electrode on one side of the element, and place a part of the one side on the part of the one side corresponding to the connection part with the outside of the electrode on the other side. Solar cells with extended electrodes
JP63138978A 1988-06-06 1988-06-06 Solar cell Pending JPH01307279A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63138978A JPH01307279A (en) 1988-06-06 1988-06-06 Solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63138978A JPH01307279A (en) 1988-06-06 1988-06-06 Solar cell

Publications (1)

Publication Number Publication Date
JPH01307279A true JPH01307279A (en) 1989-12-12

Family

ID=15234619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63138978A Pending JPH01307279A (en) 1988-06-06 1988-06-06 Solar cell

Country Status (1)

Country Link
JP (1) JPH01307279A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118016741A (en) * 2024-01-12 2024-05-10 中山大学 Thin film solar cell chip with vertical structure and preparation method and application thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5129884A (en) * 1974-09-06 1976-03-13 Sharp Kk
JPS59169185A (en) * 1983-03-09 1984-09-25 リツエンツイア・パテント−フエルヴアルツングス−ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング Solar battery
JPS60247977A (en) * 1984-05-23 1985-12-07 Hitachi Ltd Solar cell

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5129884A (en) * 1974-09-06 1976-03-13 Sharp Kk
JPS59169185A (en) * 1983-03-09 1984-09-25 リツエンツイア・パテント−フエルヴアルツングス−ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング Solar battery
JPS60247977A (en) * 1984-05-23 1985-12-07 Hitachi Ltd Solar cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118016741A (en) * 2024-01-12 2024-05-10 中山大学 Thin film solar cell chip with vertical structure and preparation method and application thereof

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