JPH01293523A - Seal metal mold for resin-sealed semiconductor device - Google Patents
Seal metal mold for resin-sealed semiconductor deviceInfo
- Publication number
- JPH01293523A JPH01293523A JP12442488A JP12442488A JPH01293523A JP H01293523 A JPH01293523 A JP H01293523A JP 12442488 A JP12442488 A JP 12442488A JP 12442488 A JP12442488 A JP 12442488A JP H01293523 A JPH01293523 A JP H01293523A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- mold
- nickel
- phosphorus
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 239000002184 metal Substances 0.000 title abstract 3
- 229910052751 metal Inorganic materials 0.000 title abstract 3
- 238000007789 sealing Methods 0.000 claims abstract description 21
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000000576 coating method Methods 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 14
- 238000001721 transfer moulding Methods 0.000 claims description 5
- 239000011347 resin Substances 0.000 abstract description 18
- 229920005989 resin Polymers 0.000 abstract description 18
- 238000007747 plating Methods 0.000 abstract description 10
- 230000008021 deposition Effects 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 3
- 239000011574 phosphorus Substances 0.000 abstract description 3
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 abstract description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 2
- 239000003795 chemical substances by application Substances 0.000 abstract description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 abstract description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 abstract description 2
- 229910001379 sodium hypophosphite Inorganic materials 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 239000006082 mold release agent Substances 0.000 description 13
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
- B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/17—Component parts, details or accessories; Auxiliary operations
- B29C45/26—Moulds
- B29C45/37—Mould cavity walls, i.e. the inner surface forming the mould cavity, e.g. linings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Injection Moulding Of Plastics Or The Like (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
この発明は、封止金型、特に、樹脂封止型半導体装置の
対土工程に使用する樹脂封止型半導体装置用封止金型に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a sealing mold, particularly to a sealing mold for a resin-sealed semiconductor device used in a soil-releasing process for a resin-sealed semiconductor device. .
［従来の技術］
リードフレーム上に搭載した半導体素子をトランスファ
成形により樹脂封止する際に使用する封止金型として、
従来、表面に硬質クロム被膜が施された下金型と上金型
が知られている。[Prior art] As a sealing mold used when resin-sealing a semiconductor element mounted on a lead frame by transfer molding,
Conventionally, lower molds and upper molds whose surfaces are coated with a hard chromium coating have been known.
封止金型は１３０〜２００℃に保持された状態で連続使
用されるため、耐熱性、耐食性、耐摩耗性などが要求さ
れる。このため、前記従来の封止金型の表面には硬質ク
ロム被膜が施されているのである。なお、樹脂封止完了
後の封止金型から樹脂封止された半導体装置を離型する
際にその離型を容易にするため、金型表面には外部離型
剤が塗布される。Since the sealing mold is continuously used while being maintained at 130 to 200°C, it is required to have heat resistance, corrosion resistance, abrasion resistance, etc. For this reason, the surface of the conventional sealing mold is coated with a hard chromium coating. Note that an external mold release agent is applied to the surface of the mold in order to facilitate the release of the resin-sealed semiconductor device from the mold after resin sealing is completed.
【発明が解決しようとする課題］
前記従来の封止金型では、硬質クロム被膜が使用されて
いるので、外部離型剤を塗布しない場合には離型性が悪
い。一方、外部離型剤を塗布した場合には、外部離型剤
の内部への混入により、得られた半導体装置の信頼性が
低下する。また、この場合には、外部離型剤が封止樹脂
の表面に付若することにより、表面が荒れるという問題
がある。[Problems to be Solved by the Invention] Since a hard chromium coating is used in the conventional sealing mold, the mold releasability is poor unless an external mold release agent is applied. On the other hand, when an external mold release agent is applied, the reliability of the obtained semiconductor device decreases due to the external mold release agent being mixed into the interior. Further, in this case, there is a problem that the surface becomes rough due to the external mold release agent adhering to the surface of the sealing resin.
この発明の目的は、外部離型剤を使用しなくても優れた
離型性が得られる樹脂封止型半導体装置用封止金型を得
ることにある。An object of the present invention is to obtain a resin-sealed mold for a semiconductor device that provides excellent mold releasability without using an external mold release agent.
［課題を解決するための手段］
この発明に係る樹脂封止型半導体装置用封止金型は、リ
ードフレーム上に搭載した半導体素子をトランスファ成
形により樹脂封止する際に使用する封止金型である。前
記金型の表面には、ニッケル−リン被膜が形成されてい
る。[Means for Solving the Problems] A mold for resin-sealed semiconductor devices according to the present invention is a mold for resin-sealing a semiconductor device mounted on a lead frame by transfer molding. It is. A nickel-phosphorus coating is formed on the surface of the mold.
［作用コ
この発明に係る封止金型では、表面にニッケル−リン被
膜が形成されている。これにより、外部離型剤を塗布し
なくても、優れた離型性能が得られる。また、外部離型
剤を塗布しなくてもよいので、樹脂封止された半導体装
置の表面が外部離型剤により荒れるという問題は解消さ
れる。[Operation] In the sealing mold according to the present invention, a nickel-phosphorus coating is formed on the surface. As a result, excellent mold release performance can be obtained without applying an external mold release agent. Further, since it is not necessary to apply an external mold release agent, the problem that the surface of the resin-sealed semiconductor device becomes rough due to the external mold release agent is solved.
［実施例］
この発明の一実施例を示す第１図において、樹脂封止型
半導体装置用封止金型は、上金型１と下金型２とを有し
ている。両全型１．２の表面には、ニッケル−リン被膜
３．４が形成されている。この被膜３，４は、無電解析
出により形成され、３〜５μｍの厚さを有している。被
膜３，４の表面は、１０点平均粗さで０．１μｍ以下に
表面粗度が設定された鏡面となっている。[Example] In FIG. 1 showing an example of the present invention, a resin-sealed mold for a semiconductor device has an upper mold 1 and a lower mold 2. As shown in FIG. A nickel-phosphorus coating 3.4 is formed on the surfaces of both molds 1.2. The coatings 3 and 4 are formed by electroless deposition and have a thickness of 3 to 5 μm. The surfaces of the coatings 3 and 4 are mirror surfaces with a surface roughness set to 0.1 μm or less on a 10-point average roughness.
両全型１，２内に形成された凹所内には、下金型２に載
せられたリードフレーム５が配置されている。リードフ
レーム５には、半導体素子６が搭載されている。この半
導体素子６は、たとえば、コンパクトディスク用やカメ
ラ用の受光素子である。上金型１と下金型２とに形成さ
れた凹所内には、リードフレーム５と半導体素子６とを
覆うように、封止樹脂７，８が充填されている。封止樹
脂７．８は、エポキシ樹脂またはポリイミド樹脂などか
らなる樹脂であり、フィラーを含んでいない。この樹脂
７，８は、受光素子としての半導体素子６の特性に応じ
て、可視光や紫外光などに関し透明な樹脂が使用されて
いる。すなわち、第１図の実施例では、リードフレーム
５上に搭載された半導体素子６が、トランスファ成形に
より封止樹脂７．８内に封止されている。A lead frame 5 placed on the lower mold 2 is placed in a recess formed in both the full molds 1 and 2. A semiconductor element 6 is mounted on the lead frame 5. This semiconductor element 6 is, for example, a light receiving element for a compact disc or a camera. The recesses formed in the upper mold 1 and the lower mold 2 are filled with sealing resins 7 and 8 so as to cover the lead frame 5 and the semiconductor element 6. The sealing resin 7.8 is a resin made of epoxy resin or polyimide resin, and does not contain filler. As the resins 7 and 8, resins that are transparent to visible light, ultraviolet light, etc. are used depending on the characteristics of the semiconductor element 6 as a light receiving element. That is, in the embodiment shown in FIG. 1, a semiconductor element 6 mounted on a lead frame 5 is sealed in a sealing resin 7.8 by transfer molding.
次に、金型１，２にニッケル−リン被膜３，４を形成す
るための具体例を説明する。ニッケル−リン被膜３，４
は無電解析出により形成される。Next, a specific example for forming the nickel-phosphorus coatings 3 and 4 on the molds 1 and 2 will be described. Nickel-phosphorus coating 3, 4
is formed by electroless deposition.
めっき液としては、たとえば、次亜リン酸ナトリウムと
硫酸ニッケルとを主成分とするｐＨ３〜６のめつき液で
、リンを７〜１５％含有しているものが使用される。無
電解析出により被ＩＩ！［３，４を形成する条件は、た
とえば次のようなものである。As the plating solution, for example, a plating solution containing sodium hypophosphite and nickel sulfate with a pH of 3 to 6 and containing 7 to 15% of phosphorus is used. II by electroless deposition! [The conditions for forming 3, 4 are as follows, for example.
めっき処理温度は、８０〜１００℃にたとえば設定され
る。めっき後の熱処理条件は、たとえば２８０℃で３０
分間である。なお、被膜３，４の硬さはこの熱処理温度
により決定され、ビッカース硬さで約８００Ｈｖ以上の
硬さを有する被膜３゜４を形成することが好ましい。The plating temperature is set, for example, to 80 to 100°C. The heat treatment conditions after plating are, for example, 280°C and 30°C.
It is a minute. The hardness of the coatings 3 and 4 is determined by the heat treatment temperature, and it is preferable to form coatings 3.4 having a Vickers hardness of about 800 Hv or more.
被膜形成の際には、まず、無電解析出によりニッケル−
リン被膜が約４０μｍの厚さで金型１゜２の表面に形成
される。その後、研摩により被膜は３〜５μｍの厚さと
され、本発明に係るニッケル−リン被膜３．４が得られ
る。なお、ニッケル−リンめっきでは、めっき液中のご
みやめっき時の水素の発生が原因となってピンホールな
どの欠陥ができやすいので、単に３〜５μｍの厚さにめ
っきしただけでは、確実な被膜３．４を形成することが
できない。When forming a film, first nickel is deposited by electroless deposition.
A phosphorous coating with a thickness of approximately 40 μm is formed on the surface of the mold 1°2. Thereafter, the coating is polished to a thickness of 3 to 5 μm, resulting in a nickel-phosphorus coating 3.4 according to the invention. In addition, in nickel-phosphorus plating, defects such as pinholes are likely to occur due to dust in the plating solution and hydrogen generated during plating, so simply plating to a thickness of 3 to 5 μm is not reliable. Coating 3.4 cannot be formed.
次に、この実施例の作用について説明する。Next, the operation of this embodiment will be explained.
まず、下金型２上に、半導体素子６を搭載したリードフ
レーム５を載せる。そして、上金型１を下金型２上に合
わせた後、トランスファ成形により封止樹脂７．８で樹
脂封止する。First, the lead frame 5 on which the semiconductor element 6 is mounted is placed on the lower mold 2. After the upper mold 1 is placed on the lower mold 2, the upper mold 1 is resin-sealed with a sealing resin 7.8 by transfer molding.
金型１，２内に注入する樹脂７．８は、たとえば酸無水
物系硬化剤からなるエポキシ樹脂であり、半導体素子６
やリードフレーム５の表面に強固に接着する。しかし、
この樹脂７，８は、ニッケル−リン被膜３，４には接着
性を示さない。したがって、得られた樹脂封止型半導体
装置は、外部離型剤を用いなくても容易に１ｌｉｔ型す
ることができる。The resin 7.8 injected into the molds 1 and 2 is, for example, an epoxy resin made of an acid anhydride curing agent, and the resin 7.8 is injected into the molds 1 and 2.
and firmly adheres to the surface of the lead frame 5. but,
The resins 7 and 8 do not exhibit adhesion to the nickel-phosphorus coatings 3 and 4. Therefore, the obtained resin-sealed semiconductor device can be easily made into a 1-lit type without using an external mold release agent.
第２図は、従来例とこの実施例との金型１，２に対する
樹脂封止型半導体装置の接着力を比較した結果を示す。FIG. 2 shows the results of comparing the adhesion strength of the resin-sealed semiconductor device to the molds 1 and 2 between the conventional example and this example.
第２図では、めっきを施さなかった鉄系の金型に対する
樹脂の接着力を１００とした場合の相対的な接着力を示
している。第２図から明らかなように、従来の金型に比
べて、この実施例によれば、樹脂封止型半導体装置の金
型への接着力が各段に低下することがわかる。FIG. 2 shows the relative adhesive strength when the adhesive strength of the resin to an unplated iron mold is set as 100. As is clear from FIG. 2, it can be seen that the adhesive strength of the resin-sealed semiconductor device to the mold is significantly lower in this example than in the conventional mold.
この実施例では、外部離型剤を塗布する必要がないので
、得られた樹脂封止型半導体装置の表面は滑らかである
。したがって、この実施例によれば、外観を損なうこと
なく樹脂封止型半導体装置を金型から離型することが容
易に行なえる。In this example, since there is no need to apply an external mold release agent, the surface of the obtained resin-sealed semiconductor device is smooth. Therefore, according to this embodiment, the resin-sealed semiconductor device can be easily released from the mold without damaging the appearance.
なお、本発明を実施するにあたり使用される半導体素子
としては、受光素子に限られることはない。光の透過性
を必要としない半導体素子については、封止樹脂として
透明のものを使用する必要がなく、たとえば黒色の樹脂
を使用することもできる。また、樹脂にはフィラーが含
まれていてもよい。このような場合でも、上記実施例と
同様の効果を奏し、外観を損なうことなく容易に離型を
行なうことができる。Note that the semiconductor element used in carrying out the present invention is not limited to a light receiving element. For semiconductor elements that do not require light transparency, it is not necessary to use a transparent sealing resin; for example, a black resin can be used. Further, the resin may contain a filler. Even in such a case, the same effect as in the above embodiment can be achieved, and the mold can be easily released without spoiling the appearance.
［発明の効果］
以上のように、この発明によれば、金型の表面にニッケ
ル−リン被膜を形成したので、離型性が良くなり、外部
離型剤を塗布する必要がなくなる。[Effects of the Invention] As described above, according to the present invention, since the nickel-phosphorous coating is formed on the surface of the mold, the mold releasability is improved and there is no need to apply an external mold release agent.
したがって、この発明によれば、外部離型剤の混入によ
る信頼性の低下や、表面の荒れの問題は解消される。Therefore, according to the present invention, the problems of decreased reliability and surface roughness due to the contamination of an external mold release agent can be solved.
第１図は、この発明の一実施例の縦断面部分図である。
第２図は、相対接着力を示すグラフである。
１．２は金型、３．４はニッケル−リン被膜−５はリー
ドフレーム、６は半導体素子、７．８は封止樹脂である
。FIG. 1 is a partial vertical cross-sectional view of an embodiment of the present invention. FIG. 2 is a graph showing relative adhesive strength. 1.2 is a mold, 3.4 is a nickel-phosphorus coating, 5 is a lead frame, 6 is a semiconductor element, and 7.8 is a sealing resin.
Claims (1)
ァ成形により樹脂封止する際に使用する樹脂封止型半導
体装置用封止金型において、前記金型の表面にニッケル
−リン被膜を形成した樹脂封止型半導体装置用封止金型
。A resin-sealing mold for a semiconductor device used when resin-sealing a semiconductor element mounted on a lead frame by transfer molding, in which a nickel-phosphorus coating is formed on the surface of the mold. Sealing mold for semiconductor devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12442488A JPH01293523A (en) | 1988-05-20 | 1988-05-20 | Seal metal mold for resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12442488A JPH01293523A (en) | 1988-05-20 | 1988-05-20 | Seal metal mold for resin-sealed semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01293523A true JPH01293523A (en) | 1989-11-27 |
Family
ID=14885141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12442488A Pending JPH01293523A (en) | 1988-05-20 | 1988-05-20 | Seal metal mold for resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01293523A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5800841A (en) * | 1994-11-24 | 1998-09-01 | Apic Yamada Corporation | Resin molding machine |
| US5800747A (en) * | 1996-07-02 | 1998-09-01 | Motorola, Inc. | Method for molding using an ion implanted mold |
| US5824252A (en) * | 1995-02-22 | 1998-10-20 | Apic Yamada Corporation | Method of resin molding and resin molding machine for the same |
| US5891384A (en) * | 1994-11-21 | 1999-04-06 | Apic Yamada Corporation | Method of operating a molding machine with release film |
| US5928595A (en) * | 1995-05-01 | 1999-07-27 | Motorola, Inc. | Method of manufacturing a semiconductor component |
| NL1015104C2 (en) * | 2000-05-03 | 2001-11-06 | Guus Jochem Van Der Sluis | Surface treatment of parts of injection molding and extrusion machines. |
-
1988
- 1988-05-20 JP JP12442488A patent/JPH01293523A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5891384A (en) * | 1994-11-21 | 1999-04-06 | Apic Yamada Corporation | Method of operating a molding machine with release film |
| US5800841A (en) * | 1994-11-24 | 1998-09-01 | Apic Yamada Corporation | Resin molding machine |
| US6444157B1 (en) | 1994-11-24 | 2002-09-03 | Apic Yamada Corporation | Method of resin molding |
| US5824252A (en) * | 1995-02-22 | 1998-10-20 | Apic Yamada Corporation | Method of resin molding and resin molding machine for the same |
| US5928595A (en) * | 1995-05-01 | 1999-07-27 | Motorola, Inc. | Method of manufacturing a semiconductor component |
| US5800747A (en) * | 1996-07-02 | 1998-09-01 | Motorola, Inc. | Method for molding using an ion implanted mold |
| NL1015104C2 (en) * | 2000-05-03 | 2001-11-06 | Guus Jochem Van Der Sluis | Surface treatment of parts of injection molding and extrusion machines. |
| WO2001083856A1 (en) * | 2000-05-03 | 2001-11-08 | Sluis Guus Jochem V D | Surface treatment of parts of die-cast and extrusion machines |
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