JPH01290366A - Electrostatic charge image recording and reproducing method - Google Patents

Abstract

PURPOSE:To make the recording and reproducing system simple and low in the cost by using a photosensitive body so as to record a picture as an electrostatic latent image optically and analogically and reading and outputting a local potential of the electrostatic latent image with a scanning density at an optional point of time. CONSTITUTION:When a voltage is applied to electrode 7, 13 from a power supply 17, no change is caused between the electrodes since a photoconductive layer 9 is a high resistance at a dark place. However, when light is made incident from the photosensitive body 1, the part of the photoconductive layer 9 in which a light is made incident shows conductivity, discharge is caused with an insulation layer 11 and an electronic charge is stored in the insulation layer 11. A charge storage medium 3 is taken out to form an electrostatic latent image. A potential signal at an optical point on the storage medium 3 is collected as a data from the electrostatic latent image by using X, Y stages or the like by means of the electrostatic potential measuring means such as electron beam type or CT scanning type, the data is displayed while being picture processing.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an electrostatic image recording and reproducing method capable of electrostatically recording an image and reproducing the image at any time.

[Conventional technology]

Conventionally, silver halide photography is known as a high-sensitivity photographing technique. In this photography method, the photographed image goes through a development process and is recorded on film, etc., and when reproducing the image, a silver salt emulsion (
This is done by using a photographic paper (such as photographic paper) or by optically scanning a developed film and reproducing it on a cathode ray tube (hereinafter referred to as CRT).

In addition, electrodes are deposited on the photoconductive layer, and the entire surface of the photoconductive layer is IFWed by corona charging in a dark place, and then exposed to strong light to make the photoconductive layer conductive in the areas exposed to the light. By leaking and removing the charge, an electrostatic latent image is optically formed on the surface of the photoconductive layer, and a toner having a charge of the opposite polarity (or a charge of the same polarity) as the residual electrostatic charge is deposited. There is an electrophotographic technology that involves developing, but this is mainly used for copying and cannot be used for photography due to its low sensitivity.The retention time of electrostatic charge is short, so it is not possible to use it immediately after forming an electrostatic latent image. It is common to use toner for development.

In addition, TV photography technology takes pictures with an image pickup tube, extracts the image information obtained using an optical semiconductor as an electrical signal, outputs it as it is to a CRT, or records it as a video using magnetic recording, etc. There are methods such as outputting an image on top.

[Problem to be solved by the invention]

Silver halide photography is an excellent means of preserving images of subjects, but it requires a developing process to form silver halide images, and image reproduction involves complex optical processes such as hard copy and soft copy (CRT output). physical, electrical, or chemical treatment is required.

In electrophotographic technology, the visualization of the obtained electrostatic latent image is easier and faster than in silver salt photography, but the storage time of the latent image is extremely short, and the developer dissociation properties, image quality, etc. are inferior to silver salt.

TV photographing technology requires line-sequential scanning in order to extract and record electrical image signals obtained by an image pickup tube. v
A progressive scanning is performed by an electron beam in the image pickup tube and by a magnetic head in video recording, but since the resolution depends on the number of scanning lines, it is significantly degraded compared to planar analog recording such as silver halide photography.

Furthermore, TV imaging systems using solid-state imaging devices (CCDs, etc.), which have been developing in recent years, are essentially the same in terms of resolution.

Problems inherent in these technologies include a complicated processing process if the image recording is of high quality and high resolution, and a lack of storage function or basic deterioration of image quality if the process is simple.

The present invention is intended to solve the above problems, and has high quality,
In addition to high resolution, the processing process is simple and long-term storage is possible.Memorized characters, line drawings, images, codes, (1,
0) It is an object of the present invention to provide an electrostatic image recording and reproducing method that can arbitrarily and repeatedly reproduce information with image quality according to the purpose.

[Means to solve the problem]

FIG. 1 is a diagram for explaining the recording method in the electrostatic image recording and reproducing method of the present invention, in which 1 is a photoreceptor, 3 is a charge retention medium, 5 is a photoconductive layer support, and 7 is a photoreceptor. 9 is a photoconductive layer, 11 is an insulating layer, 13 is a charge retention medium electrode, 1
5 is an insulating layer support, and 17 is a power source.

In FIG. 1, exposure is performed from the side of the photoreceptor 1. First, a transparent photoreceptor electrode 7 made of 1TO with a thickness of 1000 is formed on a photoconductive layer support 5 made of glass of 1ffIIIrg. , on top of this is a photoconductive layer 71 of about 10 pm.
9 is formed to constitute the photoreceptor 1. A charge holding medium 3 is connected to the photoreceptor 1 through a gap of about 1101I.
is placed. The charge holding medium 3 is a 1T film having a thickness of 1000 layers on an insulating layer support 15 made of glass having a thickness of 1 mm. , an electrode was vapor-deposited, and an insulating layer 11 with a thickness of 10 μm was formed on the electrode.

First, as shown in FIG. 1(A), 1
The charge retention medium 3 is set through a gap of about 0 μm,
As shown in FIG. 1 (b), the electrodes 7.13 are
A voltage is applied between them. In a dark place, the photoconductive layer 9 is a high-resistance material, so no change occurs between the electrodes. When light enters from the photoreceptor 1 side, the photoconductive layer 9 in the part where the light enters becomes conductive. A discharge occurs between the insulating layer 11 and the insulating layer 11, and charges are accumulated in the insulating layer N11.

After the exposure is completed, the voltage is turned off as shown in Figure 1 (c).
The formation of the electrostatic latent image is completed by setting the FF to FF and then taking out the charge holding medium 3 as shown in FIG. 1(d).

Note that the photoreceptor 1 and the charge holding medium 3 may be of a contact type instead of a non-contact type as described above, and in the case of a contact type, a positive or negative charge is applied from the photoreceptor electrode 7 side to the exposed portion of the photoconductive layer 9. Charge is injected, this charge is attracted to the electrode 13 on the charge holding medium 3 side, passes through the photoconductive layer 9, and the charge movement stops when it reaches the insulating 7111 surface, and the injected charge is accumulated at that location. Ru.

Then, when the photoreceptor 1 and the charge holding medium 3 are separated, the insulating layer 11 is separated with the charges stored therein.

When this recording method is used for planar analog recording, high resolution can be obtained similar to silver halide photography, and the insulation N1 formed
The surface charge on 1 is exposed to the air environment, but since air has good insulating properties, it can be stored for a long time without discharging regardless of whether it is in a bright or dark place.

The charge storage period on the insulating layer 11 is determined by the properties of the insulator, and is affected by the charge trapping properties of the insulator in addition to the insulating properties of air. In the above explanation, charge is explained as a surface charge, but injected charge may simply accumulate on the surface, or it may microscopically penetrate into the interior near the surface of an insulator, creating electrons or In some cases, holes may be trapped, resulting in long-term storage. Further, in order to prevent physical damage to the charge holding medium and discharge when the humidity is high, the charge holding medium may be covered with an insulating film or the like for storage.

Hereinafter, the constituent materials of the photoreceptor and the charge retention medium used in the present invention will be explained.

The material and thickness of the photoconductive layer support 5 are not particularly limited as long as they have a certain level of strength to support the photoreceptor, such as flexible plastic film, metal foil, and paper. , or glass, plastic sheet,
A rigid body such as a metal plate (which can also serve as an electrode) is used. However, if it is used in a device that records information by entering light from the photoconductor side, it will naturally need to have the property of transmitting that light. For example, if it is used in a camera that uses natural light as incident light and enters from the photoconductor side. The thickness is 1mm.
A transparent glass plate or a plastic film or sheet is used.

The photoreceptor electrode 7 is formed on the photoconductive layer support 5 except when metal is used for the photoconductive layer support 5, and its material is limited as long as the specific resistance value is 106Ω·C- or less. Rather, they are inorganic metal conductive films, inorganic metal oxide conductive films, organic conductive films, etc. Such a photoreceptor electrode 7 is formed on the photoconductive layer support 5 by vapor deposition, sputtering, CVD, coating, plating, dipping, electrolytic polymerization, or the like. Further, the thickness needs to be changed depending on the electrical properties of the material forming the photoreceptor electrode 7 and the applied voltage when recording information.
Approximately 00 to 3000 people.

Similar to the photoconductive layer support 5, this photoreceptor electrode 7 is also required to have the above-mentioned optical characteristics when information light needs to be incident thereon.
m), then I T O(Int.

Sputtering 5-3nO2), SnOz, etc.
Transparent electrodes coated by vapor deposition or by making ink with their fine powders together with a binder, and Au.

Translucent electrode made by vapor deposition or sputtering of AI, Ag, Ni, Cr, etc., tetracyanoquinodimethane (
TCNQ), an organic transparent electrode coated with polyacetylene, etc. is used.

The above electrode materials can also be used when the information light is infrared light (700 nm or more), but in some cases, colored visible light absorbing electrodes can also be used to cut visible light.

Furthermore, when the information light is ultraviolet light (400 nm or less), the above electrode materials can basically be used, but electrode substrate materials that absorb ultraviolet light (organic polymer materials, soda glass, etc.) are not preferred. A material that transmits ultraviolet light, such as quartz glass, is preferred.

The photoconductive layer 9 is a conductive layer in which photocarriers (electrons, holes) are generated in the irradiated area when light is irradiated, and these carriers can move across the layer width, especially in the presence of an electric field. This is the layer where the effect is noticeable in some cases. The materials include inorganic photoconductive materials, organic photoconductive materials, organic-inorganic composite photoconductive materials, etc. These photoconductive materials and methods for forming the photoconductive layer will be described below.

(A) Inorganic photoreceptor (photoconductor) Inorganic photoreceptor materials include amorphous silicon, amorphous selenium, cadmium sulfide, zinc oxide, and the like.

(a) Amorphous silicon photoreceptor Amorphous silicon photoreceptors include: ■ Hydrogenated amorphous silicon (a-5i:H) ■ Fluorinated amorphous silicon (a-3t:F) - These are not doped with impurities.

・P by doping B, AI, Ga, In, TI, etc.
Type (hole transport type),・PSAg,S
b, Bi, etc., are made into N type (electron transport type) by doping.

As a method for forming the photoreceptor layer, silane gas and impurity gas are introduced into a low vacuum together with hydrogen gas, etc.
I Torr), the film can be formed by depositing it on an electrode substrate heated or not heated by glow discharge, it can be formed by a thermochemical reaction on a heated electrode substrate, or it can be formed by vapor deposition or sputtering of a solid raw material. The 0M thickness used as a film, single layer, or laminated is 11-50 tI.

Further, in order to prevent charge from being injected from the transparent electrode 7 and charging as if it were exposed to light even though it was not exposed, a charge injection prevention layer can be provided on the surface of the photoreceptor electrode 7. As this charge injection prevention layer, an a-3iN layer, an a-5iN layer, or an a-5iN layer is formed on one or both of the electrode substrate and the top layer (surface layer) of the photoreceptor by glow discharge, vapor deposition, sputtering, etc.
It is advisable to provide an insulating layer such as a C layer, Si01 layer, Al2O2 layer, etc. If this insulating layer is made too thick, no current will flow when exposed, so the thickness must be at least 1000 Å or less, and ease of fabrication etc. Considering this, it is desirable to have around 400 to 500 people.

In addition, as a charge injection prevention layer, a charge transport layer having a charge transport ability with a polarity opposite to that of the electrode substrate may be provided on the electrode substrate by utilizing a rectifying effect (if the electrode is negative, a hole transport layer, If the electrode is positive, an electron transport layer is provided.For example, a-3i in which Sl is doped with boron.
: H(n') improves hole transport properties, provides a rectifying effect, and functions as a charge injection prevention layer.

(b) Amorphous selenium photoreceptor The amorphous selenium photoreceptor includes: ■Amorphous selenium (a-3e) ■Amorphous selenium telluride (a-3e-Te) ■Amorphous arsenic selenium compound (a-AszSe3)■
There is an amorphous arsenic selenium compound +Te.

This photoreceptor was fabricated by vapor deposition or sputtering, and was coated with a charge injection blocking layer as described by Sing, Ajzos, 5i
A C2SiN layer is provided on the electrode substrate by vapor deposition, sputtering, glow discharge method, or the like. Moreover, a laminated type photoreceptor may be formed by combining the above items (1) to (4).The film thickness of the photoreceptor layer is the same as that of an amorphous silicon photoreceptor.

(c) Cadmium sulfide (CdS) This photoreceptor is manufactured by coating, vapor deposition, and sputtering methods. In the case of vapor deposition, solid particles of CdS are placed on a tungsten board and vapor deposited by resistance heating, or by EB.
(electron beam) vapor deposition. In the case of sputtering, a CdS target is used to deposit on the substrate in argon plasma. In this case, CdS is normally deposited in an amorphous state, but by selecting sputtering conditions it can be changed to a crystalline orientation P! (orientation in the film thickness direction) can also be obtained. For coating, C
It is preferable to disperse dS particles (particle size 1 to 100 μm) in a binder, add a solvent, and coat on the substrate.

(d) Zinc oxide (Zn 2 O) This photoreceptor is produced by a coating method or a CVD method. As a coating method, ZnS particles (particle size 1~
100 μm) in a binder, add a solvent, and coat on a substrate. Also CVD
The method involves mixing organic metals such as diethylzinc and dimethylzinc with oxygen gas in a low vacuum (10-''~ITorr) and causing a chemical reaction on a heated electrode substrate (150~400°C) to form zinc oxide. It is deposited as a film.In this case as well, a film oriented in the film thickness direction is obtained.

(B) Organic photoreceptor Organic photoreceptors include single-layer photoreceptors and functionally separated photoreceptors.

(a) Single-layer photoreceptor A single-layer photoreceptor is made of a mixture of a charge-generating material and a charge-transporting material.

<Charge-generating substances> Substances that easily generate charges by absorbing light, such as azo pigments, disazo pigments, trisazo pigments, phthalocyanine pigments, perylene pigments, pyrylium dyes, cyanine dyes, and methine. A dye system is used.

Charge transport material system> A material with good transport properties for ionized charges, such as hydrazone-based, pyrazoline-based, polyvinylcarbazole-based,
There are carbazole-based, stilbene-based, anthracene-based, naphthalene-based, tridiphenylmethane-based, azine-based, amine-based, aromatic amine-based, etc.

Alternatively, a charge-transfer complex may be obtained by forming a complex with a charge-generating substance and a charge-transporting substance.

Normally, photoreceptors have photosensitive properties determined by the light absorption properties of the charge generating substance, but when a charge generating substance and a charge transporting substance are mixed to form a complex, the light absorption properties change; for example, polyvinylcarbazole (PVK) is only felt in the ultraviolet region, and trinitrofluorenone (TNF) is only felt in the vicinity of 400nm wavelength, but the PVK-TNF complex is only felt in the 650nm wavelength range.
You will be able to feel up to the m wavelength range.

The thickness of such a single-layer photoreceptor is preferably 10 to 50 μm.

(b) Functionally separated photoreceptor Charge generating materials easily absorb light but have the property of trapping light, while charge transporting materials have good charge transport properties but poor light absorption properties. Therefore, it is a type in which a charge generation layer and a charge transport layer are laminated in order to separate the two and fully exhibit their respective characteristics.

Charge generation layer> Examples of substances forming the charge generation layer include azo, disazo, trisazo, phthalocyanine, acidic xanthene dyes, cyanine, styryl dyes, pyrylium dyes, perylene, methine dyes, a-3e, a-5
t, azulenium salts, squalium bases, etc.

Charge Transport Layer> Examples of the substances forming the charge transport layer include hydrazone-based, pyrazoline-based, PVK-based, carbazole-based, oxazole-based, triazole-based, aromatic amine-based, amine-based, triphenylmethane-based, and polycyclic aromatic. There are group compounds, etc.

The method for manufacturing a functionally separated photoreceptor is to first dissolve the charge generating substance in a solvent and apply it on the electrode, then dissolve the charge transport layer in the solvent and apply it to the charge transport layer, and then remove the charge generating layer from zero.
．． The thickness of the charge transport layer is preferably 1 to 10 μm, and the thickness of the charge transport layer is 10 to 50 μm.

In addition, in the case of either a single-layer photoconductor or a functionally separated photoconductor, silicone resin, styrene-butadiene copolymer resin, epoxy resin, acrylic resin, saturated or unsaturated polyester resin, polycarbonate resin, polyvinyl is used as a binder. Acecool resin, phenol resin, polymethyl methacrylate (PMMA) resin, melamine resin, polyimide resin, etc. are used as charge generating materials and charge transport materials 1
0.1 to 10 parts to make it easier to adhere. As the coating method, a dipping method, a vapor deposition method, a sputtering method, etc. can be used.

Next, the charge injection prevention layer will be described in detail.

The charge injection prevention layer prevents dark current (
This can be provided to prevent charge injection from the electrode), that is, a phenomenon in which charges move in the photosensitive layer as if it had been exposed even though it had not been exposed.

There are two types of charge injection prevention layers: a layer that utilizes a so-called tunneling effect and a layer that utilizes a rectification effect. First, in a device that utilizes the so-called tunneling effect, when only a voltage is applied, current does not flow to the photoconductive layer or the surface of the insulating layer due to this charge injection prevention layer, but when light is incident, the current does not flow to the surface of the photoconductive layer or the insulating layer. Since one of the charges (electrons or holes) generated in the leading Ti layer is present in the charge injection prevention layer, a high electric field is applied, causing a tunnel effect, and current flows through the charge injection prevention layer. . Such a charge injection prevention layer is formed of a single layer such as an inorganic insulating film, an organic insulating polymer film, an insulating monomolecular film, or a stack of these. Examples of the inorganic insulating film include ASz03, this, etc. ,Bite, ,CdS%
CaO,Cents Cry's,Coo,,G
e0ts1(fox, Fe!gs, LazOs, M
gO, Mn01, NdtOs, NbzOs,, P
bO, 5bzOs, 5ift, 5eO1, Taxes
5Tion, WOs, VzOs, YJs, Y2O
1, Zr(h, BaTiOs, Altos, BizTt
Os s CaO-3rO, Ca0-YtOs, Cr-
3inSLITa01, PbTi0. , PbZrOs,
Zr0l-Co, Zr0l-5iO1, AIN
, BN, NbN, 5hy4, TaNsT
iN, VN, ZrN.

It is formed by glow discharge, vapor deposition, sputtering, etc. of SiC, TiC, 14C1, etc. The thickness of this layer is determined depending on the material used, taking into account the insulating properties to prevent charge injection and the tunnel effect. Next, the charge injection prevention layer utilizing a rectifying effect is provided with a charge transporting layer having a charge transporting ability of opposite polarity to the polarity of the electrode substrate using a rectifying effect. That is, such a charge injection prevention layer is formed of an inorganic photoconductive layer, an organic photoconductive layer, and an organic-inorganic composite photoconductive layer, and has a thickness of about 0.1 to 10 μm. Specifically, when the electrode is negative, B, Al5Ga, In
Amorphous silicon photoconductive layer doped with amorphous selenium, or oxacyazole, hilazoline, etc.
polyvinylcarbazole, stilbene, anthracene,
An organic photoconductive layer formed by dispersing naphthalene, triphenylmethane, triphenylmethane, azine, amine, aromatic amine, etc. in a resin. If the electrode is positive, P, N
An amorphous silicon photoconductive layer doped with , As, 5bSBi, etc., a ZnO photoconductive layer, etc. are formed by methods such as glow discharge, vapor deposition, sputtering, CVD, and coating.

Next, a charge retention medium material and a method for manufacturing the charge retention medium will be described.

The charge retention medium 3 is used together with the photoreceptor 1 to record information as a distribution of electrostatic charges on the surface or inside of the insulating layer 11 constituting the charge retention medium 3.
The charge retention medium itself is used as a recording medium. Therefore, the shape of this charge retention medium can take various shapes depending on the information to be recorded or the recording method. For example, when used in an electrostatic camera (same sunrise @ by the same applicant), it is in the form of a general film (single frame or continuous frame) or in the form of a disk, and when digital or analog information is recorded using a laser, etc. It can be tape-shaped, disk-shaped, or card-shaped.

The insulating layer support 15 strongly supports the charge holding medium 3 as described above, and is basically made of the same material as the photoconductive layer support 5, and has the same light transmittance. May be required. Specifically, when the charge retention medium 3 takes the form of a flexible film, tape, or disk, a flexible plastic film is used, and when strength is required, amphoteric sheets, glass, etc. are used. Inorganic materials etc. are used.

The charge retention medium electrode 13 may basically be the same as the photoreceptor electrode 7, and is formed on the insulating layer support 15 by the same formation method as the photoreceptor electrode 7 described above.

Since the insulating layer 11 records information as a distribution of static charges on its surface or inside it, it needs to have high insulation properties to suppress the movement of charges, and has a specific resistance of 1014.
It is required to have an insulation property of Ω·C11 or more. Such insulation 1'ill can be formed into a layer by dissolving resin or rubber in a solvent and coating or dipping it, or by vapor deposition or sputtering.

Examples of the resins and rubbers include polyethylene, polypropylene, vinyl resin, styrene resin, acrylic resin, nylon 66, nylon 6, polycarbonate acetal homopolymer, fluororesin, cellulose resin, and phenol resin.

Urea resin, polyester resin, epoxy resin.

Flexible epoxy resin, melamine resin, silicone resin, phenoxy resin, aromatic polyimide, PPO, polysulfone, etc., as well as polyisoprene, polybutadiene, polychloroprene, isobutylene.

Extremely high nitrile, polyacrylic rubber, chlorosulfonated polyethylene, ethylene/propylene rubber.

Fluororubber, silicone rubber, polysulfide synthetic rubber.

A single rubber such as urethane rubber or a mixture thereof is used.

Also silicone film, polyester film, polyimide film, fluorine-containing film, polyethylene film, polypropylene film, polyparabanic acid film,
A layer may be formed by pasting a polycarbonate film, a polyamide film, etc. on the charge holding medium electrode 13 via an adhesive, or a thermoplastic resin, thermosetting resin, ultraviolet curable resin, electron beam curable resin. The layer may be formed by adding necessary hardening agents, solvents, etc. to rubber, etc., and coating or dipping the mixture.

Further, as the insulating layer 11, a monomolecular film or a monomolecular cumulative film formed by the Langmuir-Proschede method can also be used.

Further, a charge retention reinforcing layer can be provided between these insulating layers 11 and the electrode surface or on the insulating layer 11. The charge retention enhancement layer is a strong electric field (104V/cm or more)
is applied, charge is injected, but at a low electric field (10'
V/cm or less) refers to a layer in which no charge is injected.
As the charge retention reinforcing layer, for example, SiO□, Ah(h
, SiC, SiN, etc. can be used, and as the organic material, for example, a polyethylene vapor deposited film or a polyvaraxylene vapor deposited film can be used.

In addition, in order to hold static charge more stably, the insulating layer 11
It is preferable to add a substance having electron-donating properties (donor material) or a substance having electron-accepting properties (acceptor material) to the material. Donor materials include styrene, pyrene,
There are naphthalene-based, anthracene-based, pyridine-based, and azine-based compounds, specifically tetrathiofulvalene (TT
F), polyvinylpyridine, polyvinylnaphthalene, polyvinylanthracene, polyazine, polyvinylpyrene, polystyrene, etc. are used, and they are used alone or in combination. Further, as the acceptor material, there are halogen compounds, cyan compounds, nitro compounds, etc., and specifically, tetracyanoquinodimethane (TCNQ), trinitrofluorenone (TNF), etc. are used, and they are used singly or as a mixture. The donor material and acceptor material are used by adding about 0.001 to 10% to the resin and the like.

Further, in order to stably retain the charge, elemental fine particles can be added to the charge retention medium. Single elements include Group 1A (alkali metals) of the periodic table and Group IB (alkali metals) of the periodic table.
Copper group), I[A group (alkaline earth metals), IIB group (zinc group), mA group (aluminum group), 11B group (rare earths), B group (titanium group), VB (vanadium group), VIB group (chromium group), VIB group (manganese group), same group (iron group, platinum group), and IVA group (carbon group) such as silicon, germanium, tin, Lead, VA group (nitrogen group) antimony and bismuth, and VIA group (oxygen group) sulfur, selenium, and tellurium are used in fine powder form. Further, among the above elements, metals can be used in the form of metals, ions, fine powder alloys, organic metals, and complexes.

Furthermore, the above elements can be used in the form of oxides, phosphorus oxides, sulfides, and halides. These additives need only be added in a very small amount to the charge retention medium such as the resin or rubber mentioned above, and the amount added is 0.0% relative to the charge retention medium.
It may be about 1 to 10% of the heavy background. In addition, the insulating layer 11 needs to have a thickness of at least 1000 mm (0.1 μm) or more from the viewpoint of insulation, and from the viewpoint of flexibility, the thickness must be at least 1000 μm.
It is preferably less than μm.

A protective film can be provided on the surface of the insulating layer 11 formed in this manner to prevent damage or discharge of information charges on the surface. For the protection ff1lff, a sticky rubber such as silicone rubber or a resin such as polyterpene resin is formed into a film and adhered to the surface of the insulating layer 11, or a plastic film is used with an adhesive such as silicone oil. It is best to stick it with a resistivity of 10
It only needs to be 14Ω・cm or more, and the film thickness is 0.5~
The thickness is about 30 μm, and if the information on the insulation 111 needs to have high resolution, the thinner the protective film is, the better. When reproducing information, this protective layer may be used to reproduce information from above the protective film, and also protects the information from the protective film. The information in the insulating layer can also be reproduced by peeling off the film.

In addition to the so-called free charge retention method in which surface charges are accumulated as described above, electrostatic charge retention methods include Niclet, which generates charge distribution and polarization within an insulating medium.

FIG. 2 is a diagram showing an electrostatic charge holding method using a photoelectret, and the same numbers as in FIG. 1 indicate the same contents. In addition, in the figure, 19 is a transparent electrode.

As shown in FIG. 2(a), an electrode 13 is formed on a support 15 such as a film, and ZnS is deposited on the electrode plate.

CdS and ZnO are formed in a thickness of 1 to 5 μm per layer by vapor deposition sputtering, CVD, coating method, etc. Then, when the transparent electrode 19 is placed on the surface of this photosensitive layer in contact or non-contact and is exposed to light by applying a voltage (FIG. 2 (b)), charges are generated in the exposed area by the light and polarized by the electric field. Even if you remove , the cards will be played in that position (Figure 2 (
c))# In this way, electrets corresponding to the exposure amount are obtained. Note that the charge retention medium shown in FIG. 2 has the advantage of not requiring a separate photoreceptor.

FIG. 3 is a diagram showing a method for holding an electrostatic charge using a thermosiliclet, and the same numbers as in FIG. 1 have the same contents.

Examples of thermoelectret materials include polyvinylidene fluoride (PVDF) and poly(VDF/trifluoroethylene).
, poly(VDF/tetrafluoroethylene), polyvinyl fluoride 5 polyvinylidene chloride 2 polyacrylonitrile, poly-α-chloroacrylonitrile, poly(acrylonitrile/vinyl chloride), polyamide 11. Polyamide 3. Poly-m-phenylene isophthalamide, polycarbonate, poly(vinylidene cyanide vinyl acetate).

It consists of a PVDF/PZT composite, etc., and is used as an electrode MtH.
, xs as a single layer with a thickness of 1 to 50 um, or two or more types are laminated.

Then, before exposure, the medium is heated to a temperature above the glass transition of the medium material by resistance heating or the like, and in this state, voltage is applied and exposure is performed (FIG. 3(b)). At high temperatures, the mobility of ions increases, and a high electric field is applied to the insulating layer in the exposed area, and among the thermally activated ions, negative charges gather at the positive electrode, and positive charges gather at the negative electrode, causing them to flow into space. Forms a charge and causes polarization. Thereafter, when the medium is cooled, the generated charges are trapped at that position even when the electric field is removed, producing electrets corresponding to the exposure amount (FIG. 3 (c)).

Next, methods for inputting information to the insulating layer 11 include a method using a high-resolution electrostatic camera and a recording method using a laser. First, the high-resolution electrostatic camera used in the present invention uses a photoreceptor 1 consisting of four light guide layers 9 with a photoreceptor electrode 7 provided on the front surface, and a photoreceptor instead of the photographic film used in ordinary cameras. A recording member is constituted by a charge retention medium consisting of an insulating layer II facing the body 1 and provided with a charge retention medium electrode 13 on the rear surface, and a voltage is applied to the picture electrode to make the photoconductive layer conductive in accordance with incident light. A latent electrostatic image of an incident optical image is formed on a charge storage medium by accumulating charges on an insulating layer according to the amount of incident light.A mechanical shutter can also be used, or an electric shutter can be used. Also, the electrostatic latent image can be retained for a long period of time regardless of bright or dark places. Also, use a prism to separate the optical information into R, G, and B light components, and use a color filter to extract them as parallel light, and form one frame with 3 cents of charge retention medium separated into R, G, and B, or]
Color photography is also possible by arranging R, G, and B images on a plane so that one set constitutes one frame.

For recording methods using lasers, the light sources include argon laser (514,488 nm), helium-neon laser (633 nm), and semiconductor laser (780 nm).
(nm, 810 nm, etc.), and a voltage is applied to the photoreceptor and the charge holding medium with their surfaces brought into close contact with each other or facing each other at a fixed interval. In this case, it is best to set the photoreceptor electrode to the same polarity as the carrier of the photoreceptor.
In this state, laser exposure corresponding to image signals, character signals, code signals, and line drawing signals is performed by scanning. Analog recording such as images is performed by modulating the light intensity of the laser, and digital recording such as characters, codes, and line drawings is performed by ON-OFF control of the laser light. Further, halftone dots in an image are formed by applying dot generator ON-OFF control to laser light. Note that the spectral characteristics of the photoconductive layer in the photoreceptor do not need to be panchromatic;
It only needs to be sensitive to the wavelength of the laser light source.

FIG. 4 is a diagram showing an example of a potential reading method in the electrostatic image recording and reproducing method of the present invention, and the same numbers as in FIG. 1 indicate the same contents. In addition, in the figure, 21 is a potential reading section,
23 is a detection electrode, 25 is a guard electrode, 27 is a capacitor, and 29 is a voltmeter.

Potential reading section 21. When facing the charge storage surface of the charge storage medium 3, an electric field generated by the charges accumulated on the insulating layer 11 of the charge storage medium 3 acts on the detection electrode 23,
An induced charge equal to the charge on the charge retention medium is generated on the detection electrode surface. Since the capacitor 27 is charged with an equal amount of charge of opposite polarity to this induced charge, a potential difference corresponding to the accumulated charge is generated between the electrodes of the capacitor, and by reading this value with a voltmeter 29, the potential of the charge carrier is determined. You can ask for it.

Then, by scanning the surface of the charge holding medium with the potential reading section 21, the electrostatic latent image can be output as an electrical signal. Note that if only the detection electrode 23 is used, the electric field (electric line of force) due to charges in a wider area than the area of the charge holding medium that faces the detection electrode will act, reducing resolution, so a grounded guard electrode 25 is placed around the detection electrode. You can do it like this.

As a result, the lines of electric force are oriented perpendicularly to the surface, so that the lines of electric force only act on the area facing the detection electrode 23, and the potential of the area approximately equal to the area of the detection electrode 23 is read. be able to. The accuracy and resolution of potential reading vary greatly depending on the shape and size of the detection electrode 1 and the guard electrode, and the distance between them and the charge retention medium, so it is necessary to find and design optimal conditions according to the required performance.

FIG. 5 is a diagram showing another example of the potential reading method, which is the same as in FIG. 4 except that the detection electrode and the guard electrode are provided on the insulating protective film 31 and the potential is detected through the insulating protective film. It is similar to

According to this method, since the detection can be performed by contacting the charge holding medium, the distance between the detection 1 and the pole can be made constant.

FIG. 6 is a diagram showing another example of the potential reading method, in which the needle-like electrode 33 is brought into direct contact with the charge holding medium and the potential of that portion is detected. resolution can be obtained. Note that if a plurality of needle-like electrodes are provided for detection, the reading speed can be improved.

The above is a direct current amplification type that detects a direct current signal with or without contact, but an example of an alternating current amplification type will be explained next.

FIG. 7 is a diagram showing a method for reading the potential of a vibrating electrode type.
is a detection electrode, 24 is an amplifier, and 26 is a meter.

The detection electrode 22 is driven to vibrate and change its distance with respect to the charged surface of the charge holding medium 3 over time, and as a result, the potential at the detection electrode 22 changes according to the electrostatic potential of the charged surface. Changes over time with amplitude. This temporal potential change is extracted as a voltage change across the impedance Z, and the alternating current component is amplified by the amplifier 24 through the capacitor C.
By reading with the meter 26, the electrostatic potential of the charged surface can be measured.

FIG. 8 shows an example of a rotating type detector, and 28 in the figure is a rotating blade.

A conductive rotary blade 12B is provided between the electrode 22 and the charging surface of the charge holding medium 3 and is rotationally driven by a driving means (not shown). As a result, the detection north pole 22 and the charge retention medium 3 are electrically shielded periodically. Therefore,
A potential signal whose amplitude changes periodically according to the electrostatic potential of the charged surface is detected by the detection electrode 22, and this alternating current component is amplified by the amplifier 24 and read.

FIG. 9 shows an example of a vibration capacitance type detector, in which 28 is a drive circuit and 30 is a vibrating piece.

The vibrating piece 30 of one electrode forming the capacitor is vibrated by the drive circuit 28 to change the capacitor capacity. As a result, the DC potential signal detected by the detection electrode 22 is modulated, and this AC component is amplified and detected. This detector converts direct current to alternating current and can measure potential with high sensitivity and stability.

FIG. 10 is a diagram showing another example of the potential reading method, in which potential is detected using the C7 method (computed tomography imaging method) using a long and thin detection electrode.

When the detection electrodes 35 are placed opposite each other across the charge storage surface, the data obtained is a value obtained by line integration along the detection electrodes, that is, data corresponding to projection data in CT. Therefore, the necessary data is collected by scanning this detection electrode over the entire surface as shown by the arrow in Figure 10 (b), and then repeating the same scan while changing the angle θ. By performing arithmetic processing using the CT algorithm, the potential distribution state on the charge carrier can be determined.

Note that by arranging a plurality of detection electrodes as shown in FIG. 11, the data collection speed can be increased, and the overall processing speed can be improved.

The 12th article shows an example of a current collector type detector, and in the figure, 32 is a grounded metal cylinder, 34 is an insulator, and 36 is a current collector.

The current collector 36 has a built-in radioactive substance, from which alpha rays are emitted. Therefore, the air inside the metal cylinder is ionized to form positive and negative ion pairs. In their natural state, these ions disappear through recombination and diffusion and maintain an equilibrium state, but in the presence of an electric field, they statistically move in the direction of the electric field while repeatedly colliding with air molecules due to thermal motion. It plays a role in transporting electric charges.

That is, the air becomes conductive due to the ions, and it can be considered that an equivalent electrical resistance path exists between the surrounding objects including the current collector 36.

Therefore, the charged surface of the charge holding medium 3 and the grounded metal cylinder 32,
Letting the resistances between the charged body and the current collector 36 and between the current collector 36 and the grounded metal cylinder 32 be Ro, R, ,R, respectively,
When the potential of the charged body is vl, the potential v2 of the current collector 36 is Vi −Rz V+ / (R1+R
1). As a result, the potential of the charge retention medium 3 can be determined by reading the potential of the current collector 36.

FIG. 13 is a diagram showing an example of an electron beam type potential reading device, in which 37 is an electron gun, 38 is an electron beam, 39 is a first dynode, and 40 is a secondary electron multiplier.

Electrons emitted from the electron gun 37 are deflected by an electrostatic deflection device or an electromagnetic deflection device (not shown) to scan the charged surface. A portion of the scanning electron beam combines with the charge on the charged surface, causing a charging current to flow, and the potential on the charged surface decreases to the equilibrium potential by that amount. The remaining modulated electron beam returns to the direction of the electron pigeon 37 and collides with the first dynode 39, and its secondary electrons are amplified by the secondary electron multiplier 40 and taken out from the anode as a signal output. Reflected electrons or secondary electrons are used as the returning electron beam.

In the case of the electron beam type, a uniform charge is formed on the medium after scanning, but a current corresponding to a latent image is detected during scanning. If the latent image has a negative charge, there is less charge accumulated by electrons in the area with more charge (exposed area),
Although the charging current is small, for example, the maximum charging current flows in a portion where no charge exists. In the case of a positive charge, the opposite is true; it becomes a negative type.

FIG. 14 is a diagram showing another example of the potential reading method,
The charge holding medium 3 on which the electrostatic latent image is formed is developed with toner,
The colored surface is irradiated with a light beam and scanned,
The reflected light is converted into an electrical signal by a photoelectric converter 41. By reducing the diameter of the light beam, high resolution can be achieved, and electrostatic potential can be easily detected optically. can.

FIG. 15 is a diagram showing another example of the potential reading method,
R formed by a fine color filter as described later
, G, and B separated images are developed with toner, the colored surface is irradiated with a light beam, and Y, M, and C signals are obtained from the reflected light. In the figure, 43 is a scanning signal generator, 45 is a laser, 47 is a reflecting mirror, 49 is a half mirror, 151 is an optical T1 converter, and 53, 55, and 57 are gate circuits.

A laser beam from a laser 45 is scanned by applying a scanning signal from a scanning signal generator 43 to a colored surface via a reflecting mirror 47 and a half mirror 49. The reflected light from the colored surface is photoelectrically transmitted via a half mirror 49. Once the signal is input to the converter 51 and converted into an electric signal, the gate circuits 53, 55, and 57 are controlled to open and close in synchronization with the signal from the scanning signal generator 43.
Gate circuit 53.5 in synchronization with the fine filter pattern
Since the opening/closing of 5.57 is controlled, Y, M, and C signals can be obtained without coloring Y, M, and C.

Note that even if the color image is divided into three planes as described later, Y, M, and C signals can be obtained in exactly the same way.
In this case as well, Y, M, and C do not need to be colored.

In the electrostatic potential detection method shown in FIGS. 14 and 15, it is necessary that the toner image has a γ characteristic corresponding to the amount of charge of the electrostatic latent image. It is necessary to avoid having thresholds for change. As long as the correspondence is established, even if the γ characteristics do not match, γ can be corrected by electrical processing.

FIG. 16 is a diagram showing a schematic configuration of the electrostatic image reproducing method of the present invention, in which 61 is a potential reading device, 63 is an amplifier,
65 is a CRT, and 67 is a printer.

In the figure, a potential reading device 61 detects the charge potential, and an amplifier 63 amplifies the detected output, which can be displayed on a CRT 65 and printed out using a printer 67. In this case, it is possible to arbitrarily select and output the part to be read at any time, and it is also possible to reproduce it repeatedly.

Furthermore, since the electrostatic latent image is obtained as an electrical signal, it can also be used for recording on other recording media, etc., if necessary.

Next, a color filter used to form a color image will be explained.

Figure 17 is a diagram showing a color separation optical system using a prism. In the figure, 71.73.75 is a prism block, 77.79
．． 81 is a filter, and 83.85 is a reflecting mirror.

The color separation optical system consists of three prism blocks, and a part of the light information incident on the a-plane of the prism block 71 is separated and reflected on the five surfaces, further reflected on the a-plane, and the B color light component is extracted from the filter 77. It will be done. The remaining optical information enters the prism block 73, travels to the C plane, where some of it is separated and reflected, and the rest goes straight to the filters 79.
．． A G color light component and an R color light component are extracted from 81. Then, by reflecting the G and B color light components with the reflecting mirrors 83.85, the R, G, and B light can be extracted as parallel light.

By placing such a filter 91 in front of the photoreceptor 1 as shown in FIG.
Either three sets of charge holding media separated into R, G, and B form one frame as shown in (b), or R, G are separated on one plane as shown in FIG. 18 (c).

They can also be lined up as B images and made into one frame for 1 cent.

FIG. 19 is a diagram showing an example of a fine color filter. For example, a film coated with resist is exposed with a mask pattern to form an R, G, B stripe pattern,
A method of forming by staining each with R, G, and B,
Alternatively, a method in which R, G, and B interference fringes are formed by passing color-separated light as shown in Figure 17 through narrow slits, respectively, is recorded on a hologram recording medium, or a mask is formed on a photoconductor. A method in which R, G, and B stripe patterns are formed using electrostatic latent images, which are then developed with toner and transferred three times to combine colors and form toner stripes. Formed by R of the filter formed by such a method,
One pixel is formed by G, Bl & Il, and each pixel is made into a fine piece of about 10 μm. By using this filter as filter 91 in FIG. 18, a color electrostatic latent image can be formed. In this case, the filter may be placed separately from the photoreceptor or may be formed integrally with the photoreceptor.

Figure 20 shows an example of a combination of a fine color filter and a Fresnel lens.
, B patterns can be reduced and recorded, and the lens can be designed to be thinner and more compact than a normal lens.

Figure 21 shows ND (Neutral Density).
) filter and R, C, and B filters together. This is a diagram showing an example of three-sided division using a combination of filters and R, C, and B filters.
The R, G, and B lights can be extracted as parallel lights by dividing the light into three by a reflecting mirror 85 and passing them through an R filter 87, a G filter 89, and a B filter 91, respectively.

[Effect]

The electrostatic image recording and reproducing method of the present invention forms an electrostatic latent image as an analog quantity or a digital quantity on a charge holding medium, and reads the charge potential to generate an electric signal corresponding to the electrostatic latent image. By outputting the image information, displaying it on a CRT, or printing it out using a printer, it is possible to achieve high quality and high resolution, as well as a simple processing process and long-term storage. It can be played repeatedly at will.

〔Example〕

Examples will be described below.

[Example 1]...Production method of charge retention medium 10 g of methylphenyl silicone resin, 1 xylene-butanol: 1
A curing agent (metallic catalyst): CR-15 (trade name) was added in an amount of IM (0.2 g) to a mixed solution containing 10 g of solvent, and the mixture was thoroughly stirred. Coating was done using 4 mil.

After that, it was dried at 150°C for 11 hours, and the film thickness was 10μ.
A charge retention medium (a) of m was obtained.

In addition, the above mixed solution was evaporated by 1000 people using Affi.
Coated in a similar manner onto a 0 μm polyester film, then dried and coated with a film-like charge retention medium (b
) was obtained.

Further, the above mixed solution was coated on a 1/4-inch disk-shaped acrylic (1■W) 11 coated with Af by 1000 people using a spinner at 2000 rpm, dried at 50°C for 3 hours, and a disk-shaped charge retention medium with a film thickness of 7 μm was coated. (C) was obtained.

Furthermore, 0.11 g of zinc stearate was added to the above mixed solution, and the same coating and drying were performed to obtain a charge retention medium (d) having a film thickness of 10 μm.

[Example 2] A mixed solution having a composition of polyimide resin Log and N-methylpyrrolidone Log was spinner coated (1000 rpm,
20 s) and 30 s at 150 °C to dry the solvent.
After pre-drying for 1 minute, 350°C1 for curing.
Heated for 2 hours.

A uniform film with a film thickness of 8 μm was formed.

<Example A> Rosin ester resin (stevelite ester 10) 10
A1.g was dissolved in 90g of n-butyl alcohol. A spinner coating (1000 rpm, 30 seconds) was applied onto a glass substrate that had been evaporated by 1000 people.

As a result of leaving it for 1 hour at 60°C to dry the solvent,
A uniform film with a film thickness of 2 μm was formed.

Amorphous selenium was laminated on this medium by vapor deposition under the following conditions.

First, a medium is fixed to a substrate holder in a vacuum chamber with the glass surface in contact with the holder.

This substrate holder is capable of heating and heats the substrate medium to 100° C. during deposition. Vapor deposition was carried out using a conventional resistance heating method, and selenium was vapor-deposited in a low vacuum state of 0 degree of vacuum and I Torr. As a result, a charge retention medium was obtained in which selenium was formed in the form of fine particles in the rosin ester oil layer, and the particle size was about 0.5 μm on average.

[Example 3]...Single layer organic photoreceptor (PV - TNF
) Preparation method Poly-N-vinylcarbazole 10 g (Anan Fragrance (
Co., Ltd. L2,4.7-)linitrofluorenone 10g,
2 g of polyester resin (binder: Byron 200 manufactured by Toyobo Co., Ltd.), 90% tetrahydrofuran (THF)
A mixed solution having a composition of g was prepared in a dark place, and In□(h-
Sputtered SnOl to a thickness of approximately 1000 nm onto a glass substrate (1 ms thick) using a doctor blade, and dried with ventilation at 60°C for approximately 1 hour. A photosensitive layer having a photoconductive layer of about 10 μm was obtained. In addition, in order to completely dry the sample, it was further air-dried for one day before use.

(Example 4)...Production method of amorphous silicon aSi:H inorganic photoreceptor ■Substrate cleaning Corning 7059 glass (23x, 16x0°9t, with a thin film transparent electrode layer of S n Oz on one surface)
(optically polished) was ultrasonically cleaned in trichloroethane, acetone, and ethanol in this order for 10 minutes each.

■ Preparation of the device After setting the cleaned substrate on the anode 106 in the reaction chamber 104 in FIG. 22 to ensure sufficient heat conduction,
The temperature inside the reaction chamber was increased to 10-' Torr.

The reaction vessel and gas pipe are baked out at 1506° C. to 350° C. for about 1 hour, and the apparatus is cooled after baking out.

■a-3i: H(n”) deposition
P that has been adjusted, heated, and mixed in the tank 101 in advance
Hs/S i Ha'' = 1000 ppm gas was flowed into the reaction chamber 104 so that the internal pressure became 200-Torr by controlling the rotation speed of the needle valve and PMB, and after the internal pressure became constant, the Matching Bo
40W Rf Power 10 through x 103
2 (13,56 KHz) to form plasma between the cathode and anode. Deposition is carried out for 4 minutes, then the input of Rf is stopped and the needle valve is closed.

As a result, approximately 0.0. A 2 μm a-3i:H(n') film was deposited on the substrate.

■a-3t: Deposition of H 5jHslOO% gas in the same way as ■ until the internal pressure is 200I
When the internal pressure becomes constant, the pressure is increased to 40°C through the Matching Box 103.
RfPower 102 C13, 56 KHz> of W was input to form a plasma and maintain it for 70 minutes. When the deposition is completed, the input of Rf is stopped and the needle valve is closed. He
After ater 10804f, take out the board while it is still cold.

As a result, a film of approximately 18.8 μm was formed using a-si:H(no)
deposited on the membrane.

Thus 5nOt /a-3i :H(n'') blockingffj/a-3i :H(nor+-dope)
A 20 μm photoreceptor could be manufactured.

[Example 5] Method for producing an amorphous selenium-tellurium inorganic photoreceptor.

A-Se-
A Te FJI film was deposited on a TO glass substrate at a vacuum degree of 10-' Torr using a resistance heating method. W! , and the thickness was Ipm. Furthermore, while maintaining the degree of vacuum, only Se was evaporated using the same resistance heating method, and 10
μm a-5e layers were laminated.

[Example 6] Method for producing a functionally separated photoreceptor (method for forming a charge generation layer) 250 ml of a mixed solution containing 0.4 g of chlorodiane blue and 40 g of dichloroethane! Put it in a stainless steel container with a volume of 180 mjl and glass beads No. 3! was added and pulverized for about 4 hours using a vibrating mill (Yasuyo Denki Seisakusho KED9-4) to obtain chlorocyan blue with a particle size of ~5 μm. After filtering the glass peas, add 0.4g of polycarbonate, Kneepilon E-2000 (Mitsubishi Gas Chemical)
Add and stir for about 4 hours. A glass substrate (1 mm thick) on which about 1000 In, O, -Sn islands were sputtered with this solution.
The charge generation layer was coated using a doctor blade to obtain a charge generation layer with a thickness of about 1 μm. Drying was carried out at room temperature for one day.

[Method for forming charge transport layer]

4-Dibenzylamino-2-methylbenzaldehyde-
0.1 g of 1,1'-diphenylhydrazone.

Polycarbonate (Kneepilon B-2000) 0,
1 g.

A mixed solution having a composition of 2.0 g of dichloroethane was applied onto the charge generation layer using a doctor blade to form a layer of about 10 μm.
A charge transport layer of m was obtained. Drying was performed at 60°C for 2 hours.

[Example 7] (Formation method of charge generation layer) Butyral resin (Building Chemical, 5LE) was added to butyl acetate log.
C) 0.25g, azulenium C having the following structural formula
Mix ZO, salt, 0.5g, Gara, Subies N01133g,
The mixture was stirred with a touch mixer for 1 day to be well dispersed, and then applied with a doctor blade or applicator onto ITO laminated on a glass plate, and dried at 60°C for 12 hours or more. The film thickness after drying is 1 μm or less.

(Method for forming a charge transport layer) 9.5 g of tetrahydrofuran, 0.5 g of polycarbonate (Mitsubishi Gas Chemical Co., Ltd., Nipiron E2000) and a hydrazone derivative represented by the following structural formula (Anan Perfume Co., Ltd., CTC1).
91) and was applied onto the charge generation layer using a doctor blade, followed by drying at 60°C for 2 hours or more. The film thickness was 10 μm or less.

[Example 8] (Method for forming a charge generation layer) 20 g of tetrahydrofuran, 0.5 g of butyral resin (5LEC, manufactured by Block Chemical), and 0.2 g of titanyl phthalocyanine.
5g, 4.10-dibromoanthrone 0.25g
, Glass Peas N091 33g 1 with 1 touch mixer
The mixture was stirred for several days to be well dispersed, and then applied using a doctor blade or an applicator onto ITO laminated on a glass plate, and dried at 60° C. for 2 hours or more. The film after drying had a film thickness of 1 am or less.

(Preparation method of charge transport layer) Dissolve 0.5 g of polycarbonate (Mitsubishi Gas Chemical, Nipiron E2000) and 0.5 g of the above hydrazone derivative (Anan Perfume, CTCI91) in 9.5 g of dichloroethane, and use a doctor blade to generate the above charge. Apply on layer, 6
It was dried for 12 hours or more at 0'C. The film thickness was 10 μm or more.

[Example 9]... Method for producing a functionally separated photoreceptor provided with a charge injection prevention layer (method for forming a charge injection prevention layer) Soluble polyamide (Toagosei Kagaku, FS- 175SV10) was applied to a thickness of 0.5 to 1 μm using a spin coater and dried at 60° C. for 12 hours or more.

(Method for forming charge generation layer) Add butyral resin (Building Chemical, 5LE) to 10 g of butyl acetate.
C) 0.25g, azulenium C20 as described above, salt 0.
5 g and 133 g of Glass Peas N01 were mixed, stirred for 1 day with a touch mixer, well dispersed, applied on the charge injection prevention layer using a doctor blade or applicator, and dried at 60° C. for 12 hours or more. The film after drying had a thickness of 1 μm or less.

(Method for forming a charge transport layer) 9.5 g of tetrahydrofuran, 0.5 g of polycarbonate (Mitsubishi Gas Chemical Co., Ltd., Nipiron E2000), and 0.5 g of the above-mentioned hydrazone derivative (CTC191, manufactured by Anan Kaori Co., Ltd.)
The mixture was melted and applied onto the charge generation layer using a doctor blade, and dried at 60°C for 2 hours or more. Film thickness 10μ
m or less.

[Example 10] (Method for forming charge injection prevention layer) Apply 0.5 to 1 μm of soluble polyamide (Toagosei Kagaku, FS-175SV10) on ITO layered on a glass plate using a spin coater, and heat at 60°C for 22 hours or more. Dry.

(Method for forming a charge generation layer) 20 g of tetrahydrofuran, 0.5 g of butyral resin (5LEC, manufactured by Building Blocks Chemical), and 0.2 g of titanyl phthalocyanine.
5g, 4.10-dibromoanthrone 0.25g
, Glass Peas N001 33g 1 with 1 touch mixer
Stir for several days, disperse well, and apply the mixture onto the charge injection prevention layer using a doctor blade or applicator.
．． It was dried at 60°C for 12 hours or more. The film after drying is
The film thickness was 1 μm or less.

(Method for forming a charge transport layer) 0.5 g of polycarbonate (Mitsubishi Gas Chemical, Nipiron E2000) was added to 9.5 g of dichloroethane as a solvent.
The hydrazone derivative (Anan Kaori, CTC19L) 0.
5 g was dissolved and applied onto the charge generation layer using a doctor blade, and dried at 60°C for 12 hours or more. Film thickness is 10
It was more than μm.

[Example 11] (Method for forming photoreceptor electrode layer) Indium tin oxide (ITO) on blue plate glass.

A film with a specific resistance of 100 Ω·cm” was deposited by sputtering.

Further, it can be similarly deposited by the EB method.

(Method for Forming Charge Injection Prevention Layer) Silicon dioxide was deposited on the photoreceptor electrode layer by sputtering.

The film thickness can be from 100 to 3,000, and aluminum oxide may be used instead of silicon dioxide, and the EB method can be used instead of the sputtering method.

(Method for Forming Charge Generating Layer) Selenium-tellurium (13% by weight of tellurium-containing M) was deposited on the charge injection prevention layer by resistance heating. The film thickness is 2
It is less than μm.

(Method for Forming Charge Transport Layer) Granular selenium was used on the charge generation layer and deposited by resistance heating. The film thickness is 10 μm or less.

[Example 12]...Production method of thermal electret Vacuum deposition (10-
1000 Aj! was deposited by ``Torr'' (resistance heating method) as a charge holding medium, and an electrostatic latent image was formed together with the photoconductive photoreceptor of the functionally separated photoreceptor.

First, charge holding medium Ai is hot-bladed from the substrate side (
3×3 cm) and heat the medium to 180°C. Immediately after heating, the photoreceptor was placed in a charge holding medium with its surfaces facing each other with an air gap of 10tIm, and a voltage of -550V was applied between the precious electrodes.
A voltage of 200 nm was applied (with the photoreceptor electrode being negative), and exposure was performed. Exposure was carried out at 1.0 lux using a halogen lamp as a light source for 1 second from the back surface of the photoreceptor through the character pattern document.

After this, the film was naturally cooled, and as a result, the exposed areas (characters)
A potential of -150 V was measured in the area, and no potential was measured in the unexposed area. Water droplets were dropped onto the film on which the charged pattern was formed, and after being collected, the potential was measured. As a result, a potential of -150 cm was measured in the exposed area, which was the same as before.

On the other hand, after forcibly forming a charge of -150V on the surface of a charge-retaining medium by corona discharge, water droplets were dropped and collected.
The charge disappeared. Therefore, it was found that charge formation under heating causes polarization inside polyvinylidene fluoride, resulting in electret formation.

[Example 13] Method for producing photoelectret 1.
Al was laminated on a 1 mm 1 liter glass support by about 1,000 sputtering method to form a substrate, and zinc sulfide was evaporated on one layer to a thickness of about 1.5 μm (10-'Tor).
r, resistance heating), the ITO layer laminated on glass was faced with an air gap of 10 μm, and a voltage of +700 V was applied between both electrodes (with the polar side negative at A/41). ), exposure was performed from the ITO substrate side.

Exposure was performed in the same manner as in Example 11. As a result, a potential of +80 V was measured in the exposed area, and no potential was measured in the unexposed area. In this case as well, a water droplet experiment similar to that in Example 11 was conducted, but there was no change in the potential after recovery, and an electret with charge accumulated inside was formed.

[Example 14] Single layer organic photoreceptor (PVK-TNF) of Example 3,
Using the charge retention medium of Example 1(a) and the glass substrate, these are stacked with the electrode side facing outward and set in a camera. At this time, in order to provide a gap between the photoreceptor 1 and the charge holding medium 3, a 10 μm polyester film is placed around the area other than the exposed surface as a spacer 2, as shown in FIG.

Set the voltage to 7 with the photoreceptor electrode side negative and the charge holding medium side positive.
00V applied, exposure f-1°4, shutter in that state.
The subject was photographed outdoors in the daytime by either turning off the optical shutter at a speed of 1/60 seconds or by applying voltage for 1760 seconds at exposure f-1,4 with the shutter open.

After turning off the exposure and the voltage application, the charge holding medium was taken out in a bright or dark place, and 1) CRT image formation was performed using a micro-area potential reading method, and 2) image formation was performed using toner development.

In (2), X-Y axis scanning was performed using a 100×100 μm micro-area surface potential measuring probe, potential data in units of 100 μm was processed, and an image was formed on a CRT by potential-luminance conversion. An analog potential latent image was formed on the charge holding medium from the maximum exposed area potential of 200 V to the unexposed area Ov, and this latent image could be visualized on a CRT with a resolution of 100 μm.

In (2), a positive image was obtained by immersing the removed charge holding medium in negatively charged liquid toner (black) for 10 seconds. The resolution of the obtained toner image was as high as 1 μm.

Color images were taken using the following method.

■ Prism type three-plane division method As shown in Figure 17, place R2O and B filters on the three sides of the prism, set the above medium on each side, set f-1, 4, and shutter speed 1/30. The subject was photographed in seconds.

■Color CRT display method Each R, G, and Bm image is scanned and read using the same method, and fluorescent colors corresponding to the R, G, and B latent images are formed on the CRT, and a three-color separated image is created on the CRT. A color image was obtained by combining the images.

■Toner development method The exposed charge-retaining medium is developed with C (cyan), M (magenta), and Y (yellow) toners that are negatively charged with respect to the R, G, and B latent images, respectively, to form toner images. . Before the toner dried, plain paper was placed on the medium on which the cyan toner image was formed, the paper was positively charged with corona, and then peeled off, and the toner image was transferred to the plain paper. Furthermore, when magenta toner and yellow toner were sequentially transferred and synthesized to the same location by aligning the image positions using the same method, a color image was formed on plain paper.

(Effects of the Invention) As described above, according to the first invention, an electrostatic latent image is recorded on a recording material in an analog manner, and the local potential of the electrostatic latent image is scanned at an arbitrary time point. Since it can be read out and output at high density, it is like taking a silver halide photograph, optically scanning that photograph at an appropriate time, and re-outputting it, making it possible to output a high-quality original image at any time. A reproduction method is obtained.

Further, in the case of direct potential detection, no physical or chemical means such as a developing means is required, so that an inexpensive and simple recording/reproducing system can be created.

[Brief explanation of the drawing]

FIG. 1 is a diagram for explaining the principle of the electrostatic image recording and reproducing method of the present invention, and FIG. 2 is a diagram for explaining the principle of the electrostatic image recording and reproducing method of the present invention using a photoelectret. Figure 3 is a diagram for explaining the principle of the electrostatic image recording and reproducing method of the present invention using a thermal electret, Figures 4, 5,
Figure 6 is a diagram showing an example of a DC amplification type potential reading method;
Figures 7, 8, and 9 are diagrams showing an example of an AC amplification type potential reading method, Figures 10@ and 11 are diagrams showing an example of a potential reading method using the CT scan method, and Figure 12. 13 is a diagram showing an example of a current collecting type potential reading method, FIG. 13 is a diagram showing an example of an electron beam type potential reading method, and FIGS. 14 and 15 explain a potential reading method using toner coloring. 16 is a diagram showing a schematic configuration for electrostatic image reproduction according to the present invention, FIG. 17 is a diagram showing a configuration of a color separation optical system, and FIG. 18 is a diagram showing a configuration for forming a color electrostatic latent image. Explanatory diagram,
Figure 19 is a diagram showing an example of a fine color filter, Figure 20 is a diagram showing an example of a combination of a fine color filter and a Fresnel lens, and Figure 21 is a diagram showing an example of a combination of a fine color filter and a Fresnel lens.
Figure 22 is a diagram showing three-sided division using a filter.
-3t: Diagram for explaining the method for manufacturing the H photoconductor, 2nd
FIG. 3 is a diagram for explaining an example of imaging by an electrostatic camera to which the present invention is applied. DESCRIPTION OF SYMBOLS 1... Photoreceptor, 3... Charge retention medium, 5... Transparent support, 7... Transparent electrode, 9... Photoconductive layer, 11...
...Insulating layer, 13...Electrode, 15...Support, 17
...Power source, 21... Potential reading/filtering section, 23... Detection electrode, 25... Guard pole, 27... Capacitor. Applicant Dai Nippon Printing Co., Ltd. Agent Patent Attorney Masanobu Hirukawa (4 others) Figure 1 (C) (D) Figure 4 Figure 5 Figure 6: Todo Figure 8 2m Figure 1o Figure 11 Figure 12 Figure 13 Figure 16 Figure - 17 Figure 18 Figure 19 Figure 20 Figure 21 Figure 23 Section

Claims (8)

[Claims] (1) A photoconductor made of a photoconductive layer with an electrode on the front surface and a charge retention medium made of an insulating layer with an electrode on the back surface facing the photoconductor are arranged, and a voltage is applied between both electrodes. After image exposure is performed from the photoreceptor side or the charge holding medium side in a state in which the charge holding medium is held, the charge holding medium is separated, and the charge potential stored in the charge holding medium as image information is amplified and an image is reproduced and output. Electrical image recording and reproducing method. (2) The electrostatic image recording and reproducing method according to claim 1, wherein the photoreceptor and the charge holding medium are in contact or non-contact. (3) The electrostatic image recording and reproducing method according to claim 1, wherein the charge potential is read by placing a detection electrode facing the charge holding medium and detecting the potential generated by the charge induced in the detection electrode. (4) The electrostatic image recording and reproducing method according to claim 1, wherein a guard electrode is provided around the detection electrode. (5) The electrostatic image recording and reproducing method according to claim 1, wherein an insulating film is provided on the surfaces of the detection electrode and the guard electrode. (6) The electrostatic image recording and reproducing method according to claim 1, wherein the detection electrode is an elongated rod-shaped electrode, and the potential distribution is determined by a CT method by operating on the surface of the charge-retaining medium. (7) The electrostatic image recording and reproducing method according to claim 1, wherein the detection electrode is scanned with or without contact with the charge holding medium, and the accumulated charge is detected as a potential or current value while being extracted. (8) The electrostatic image recording and reproducing method according to claim 1, wherein the charge potential is read by developing the charge holding medium with toner, irradiating it with a light beam, and photoelectrically converting the reflected light.