JP2891462B2 - Charge holding medium exposure recording method - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure method in a recording apparatus such as a copying machine and the like, and in particular, can stably hold a latent image for a long period as an electrostatic latent image forming medium. The present invention relates to an exposure method for a recording apparatus using a charge holding medium.

[Conventional technology]

Generally, in a conventional copying machine, an electrode is deposited on a photoconductive layer, the entire surface of the photoconductive layer is charged by corona charging in a dark place, and then exposed to strong light to expose a portion of the photoconductive layer exposed to light. It is made conductive, and the latent charge is leaked and removed to form an electrostatic latent image optically on the surface of the photoconductive layer. The charge has the opposite polarity (or the same polarity) as the residual electrostatic charge. A toner which is developed by attaching a toner having the following formula is used.

[Problems to be solved by the invention]

However, the conventional exposure method in a copying machine involves a problem that a high voltage and a large power are required because the entire surface is corona-charged by a light voltage and then exposed to strong light to form an electrostatic latent image. Further, since the holding time of the electrostatic charge is very short, it is necessary to develop the toner immediately after the formation of the electrostatic latent image, and it is impossible to develop the toner at any time after the formation of the electrostatic latent image.

SUMMARY OF THE INVENTION The present invention is directed to solving the above problems, and has a high quality, a high resolution, a low voltage, a low power consumption, and a variety of exposure methods. An object of the present invention is to provide an exposure method.

[Means for solving the problem]

FIG. 1 is a view for explaining a recording method in the electrostatic image recording / reproducing method of the present invention, wherein 1 is a photosensitive member, 3 is a charge holding medium, 5 is a photoconductive layer support, and 7 is a photosensitive member. Electrode, 9
Denotes a photoconductive layer, 11 denotes an insulating layer, 13 denotes a charge holding medium electrode, 15 denotes an insulating layer support, and 17 denotes a power supply.

FIG. 1 shows an embodiment in which exposure is performed from the photoconductor 1 side. First, a transparent photoconductor electrode 7 made of ITO having a thickness of 100 mm is formed on a photoconductive layer support 5 made of 1 mm thick glass.
A photoconductive layer 9 having a thickness of about 10 μm is formed thereon to form the photoconductor 1. The charge holding medium 3 is arranged on the photoconductor 1 with a gap of about 10 μm. The charge holding medium 3 is placed on an insulating layer support 15 made of glass having a thickness of 1 mm to a thickness of 1000 mm.
A thick Al electrode 13 is formed by evaporation, and 10 μm
An insulating layer 11 having a thickness of m is formed.

First, as shown in FIG.
The charge holding medium 3 is set through a gap of about 10 μm,
As shown in FIG. 1 (b), a voltage is applied between the electrodes 7 and 13 by the power supply 17. In a dark place, since the photoconductive layer 9 is a high-resistance body, no change occurs between the electrodes. When light is incident from the photoreceptor 1 side, the photoconductive layer 9 in the portion where the light is incident shows conductivity, and a discharge occurs between the photoconductive layer 9 and the insulating layer 11.
The electric charge is accumulated.

When the exposure is completed, a voltage is applied as shown in FIG.
Turn off, and then take out the charge holding medium 3 as shown in FIG. 1 (d) to complete the formation of the electrostatic latent image.

The photoconductor 1 and the charge holding medium 3 may be of a contact type instead of a non-contact type as described above. In the case of the contact type, a positive or negative charge is applied to the exposed portion of the photoconductive layer 9 from the photoconductor electrode 7 side. Charges are injected, and the charges are drawn by the electrode 13 on the charge holding medium 3 side, pass through the photoconductive layer 9, and stop moving when reaching the surface of the insulating layer 11. Is done. Then, when the photoconductor 1 and the charge holding medium 3 are separated, the insulating layer
11 are separated while keeping the charge.

When this recording method is a planar analog recording, high resolution can be obtained in the same manner as the silver halide photography, and an insulating layer to be formed is formed.
Although the surface charge on 11 is exposed to the air environment, the air has a good insulating performance, so it is stored for a long time without discharging regardless of the light place and the dark place.

The charge storage period on the insulating layer 11 is determined by the properties of the insulator, and is affected by the charge trapping characteristics of the insulator in addition to the insulating properties of air. In the above description, charges are described as surface charges.Injected charges may simply accumulate on the surface, and microscopically penetrate into the vicinity of the insulator surface, and electrons or electrons enter the structure of the substance. Since the holes may be trapped, long-term storage is performed. Further, the surface of the insulating layer 11 may be covered with an insulating film or the like and stored in order to prevent physical damage to the charge holding medium or discharge when the humidity is high.

Hereinafter, constituent materials of the photoreceptor and the charge holding medium used in the present invention will be described.

The material and thickness of the photoconductive layer support 5 are not particularly limited as long as the photoconductive layer support 5 has a certain strength capable of supporting the photoreceptor. For example, a flexible plastic film, metal foil, paper, or the like may be used. Alternatively, a rigid body such as a glass, a plastic sheet, or a metal plate (which can also serve as an electrode) is used. However, when used in a device that records information by irradiating light from the photoconductor side, it is naturally necessary to have the property of transmitting that light.For example, when using natural light as incident light and using it in a camera that enters from the photoconductor side Has a thickness of 1m
A transparent glass plate of about m or a plastic film or sheet is used.

The photoreceptor electrode 7 is formed on the photoconductive layer support 5 except when a metal is used for the photoconductive layer support 5, and the material thereof is as long as the specific resistance value is 10 ⁶ Ω · cm or less. There is no limitation, and an inorganic metal conductive film, an inorganic metal oxide conductive film, or the like can be used.
Such a photoconductor electrode 7 is formed on the photoconductive layer support 5 by vapor deposition, sputtering, CVD, coating, plating, dipping, electrolytic polymerization, or the like. It is necessary to change the thickness depending on the electrical characteristics of the material constituting the photoreceptor electrode 7 and the voltage applied when recording information. For example, in the case of aluminum, the thickness is about 100 to 3000 °. Similarly to the photoconductive layer support 5, the photosensitive electrode 7 is required to have the above-mentioned optical characteristics when information light needs to be incident thereon. For example, when the information light is visible light (400 to 700
nm), a transparent electrode such as ITO (In ₂ O ₃ -SnO ₂ ), SnO _2, etc., which is formed by sputtering, vapor deposition, or inking and coating a fine powder thereof with a binder.
Translucent electrodes made of u, Al, Ag, Ni, Cr, etc. by evaporation or sputtering, tetracyanoquinodimethane (TCN
Q), an organic transparent electrode or the like which is coated with polyacetylene or the like is used.

When the information light is infrared (700 nm or more) light, the above electrode material can be used. In some cases, a colored visible light absorbing electrode can also be used to cut off visible light.

Further, when the information light is ultraviolet light (400 nm or less), the above-mentioned electrode materials can be basically used, but those in which the electrode substrate material absorbs ultraviolet light (organic polymer materials, soda glass, etc.) are not preferable. A material that transmits ultraviolet light, such as quartz glass, is preferable.

The photoconductive layer 9 is a conductive layer in which photocarriers (electrons and holes) are generated in the irradiated portion when light is irradiated, and the carriers can move in a layer width. In particular, an electric field exists. In this case, the effect is remarkable. The material is composed of an inorganic photoconductive material, an organic photoconductive material, an organic-inorganic hybrid type photoconductive material, or the like.

Hereinafter, a method for forming the photoconductive material and the photoconductive layer will be described.

(A) Inorganic Photoreceptor (Photoconductor) Examples of inorganic photoreceptor materials include amorphous silicon, amorphous selenium, cadmium sulfide, and zinc oxide.

(A) Amorphous silicon photoreceptor As an amorphous silicon photoreceptor, hydrogenated amorphous silicon (a-Si: H) fluorinated amorphous silicon (a-Si: F) ・ Those not doped with impurities, ・ B, Al , Ga, In, Tl, etc. are made P-type (hole transport type) by doping; and P, Ag, Sb, Bi, etc. are made N-type (electron transport type) by doping.

As a method for forming the photoconductive layer by introducing silane gas, an impurity gas together such as hydrogen gas in the low vacuum (example ^-2 ～1To
rr), a film is formed by pre-stacking on an electrode substrate heated or not heated by glow discharge, a thermochemical reaction is formed on a heated electrode substrate, or a solid material is formed by vapor deposition and sputtering. Used as a film, a single layer or a laminate. The film thickness is 1 to 50 μm.

Further, a charge injection preventing layer can be provided on the surface of the photoreceptor electrode 7 in order to prevent charge from being injected from the transparent electrode 7 and being exposed as if it were not exposed. As the charge injection preventing layer, an a-SiN layer, a-SiC layer is formed on one or both of the electrode substrate and the uppermost layer (surface layer) of the photoreceptor by glow discharge, vapor deposition, sputtering or the like.
It is preferable to provide an insulating layer such as a layer, a SiO ₂ layer, and an Al ₂ O ₃ layer. If the insulating layer is too thick, no current will flow when exposed to light, so it must be at least 1000 ° or less, and preferably about 400-500 ° in consideration of ease of fabrication.

Further, as the charge injection preventing layer, it is preferable to provide a charge transporting layer having a charge transporting ability of a polarity opposite to the polarity of the electrode substrate on the electrode substrate by utilizing a rectifying effect. Is positive, an electron transport layer is provided. For example, a-Si: H in which boron is doped in Si
(N ⁺ ) enhances the hole transporting property, provides a rectifying effect, and functions as a charge injection preventing layer.

(B) Amorphous selenium photoconductor Amorphous selenium photoconductor includes amorphous selenium (a-Se) amorphous selenium tellurium (a-Se: Te) amorphous arsenic selenium compound (a-As ₂ Se ₃ ) amorphous arsenic selenium compound + Te .

This photoreceptor is prepared by vapor deposition and sputtering, and a SiO ₂ , Al ₂ O ₃ , SiC, SiN layer as a charge injection blocking layer is provided on the electrode substrate by vapor deposition, sputtering, glow discharge or the like. Further, the above-mentioned may be combined to form a laminated photoreceptor. The film pressure of the photoconductor layer is the same as that of the amorphous silicon photoconductor.

(C) Cadmium sulfide (CdS) This photoreceptor is prepared by coating, vapor deposition, and sputtering. In the case of vapor deposition, solid particles of CdS are placed on a tungsten board and deposited by resistance heating, or EB
(Electron beam) This is performed by vapor deposition. In the case of sputtering, deposition is performed on a substrate in argon plasma using a CdS target. In this case, CdS is usually deposited in an amorphous state, but a crystalline alignment film (oriented in the film thickness direction) can be obtained by selecting sputtering conditions.
You can also get In the case of coating, CdS particles (particle diameter: 1 to 100 μm) may be dispersed in a binder, and a solvent may be added to coat on a substrate.

(D) Zinc oxide (Zn O) This photoreceptor is manufactured by a coating method or a CVD method. As the coating method, ZnS particles (particle size 1 to 100
μm) is dispersed in a binder, a solvent is added, and coating is performed on a substrate. In the CVD method, an organic metal such as diethyl zinc or dimethyl zinc and oxygen gas are mixed in a low vacuum (10 ^{-2 to 1} Torr), and a chemical reaction is performed on a heated electrode substrate (150 to 400 ° C.) to oxidize. Deposited as a zinc film. Also in this case, a film oriented in the film thickness direction can be obtained.

(B) Organic Photoreceptor The organic photoreceptor includes a single-layer type photoreceptor and a function-separated type photoreceptor.

(A) Single-layer photoreceptor The single-layer photoreceptor is composed of a mixture of a charge generating raw material and a charge transport material.

<Charge-generating substance type> It is a substance that easily absorbs light to generate an electric charge, and includes, for example, an azo pigment, a disazo pigment, a trisazo pigment, a phthalocyanine pigment, a perylene pigment, a pyrylium dye,
Cyanine dyes and methine dyes are used.

<Charge transporting substance type> It is a substance having good ionizing charge transporting properties, for example, hydrazone type, pyrazoline type, polyvinyl carbazole type, carbazole type, stilbene type, anthracene type,
There are naphthalene type, tridiphenylmethane type, azine type, amine type, aromatic amine type and the like.

Further, a charge transfer complex may be formed by forming a complex between the charge generation material and the charge transport material.

Normally, a photoreceptor has photosensitivity determined by the light absorption characteristics of a charge generating substance. However, if a charge generating substance and a charge transporting substance are mixed together to form a complex, the light absorption properties change. For example, polyvinyl carbazole (PVK) is an ultraviolet light. Only in the region, trinitrofluorenone (TNF) only feels around 400 nm wavelength, while the PVK-TNF complex feels up to 650 nm wavelength region.

The film thickness of such a single-layer photoreceptor is preferably 10 to 50 μm.

(B) Function-separated type photoreceptor Although the charge generating material easily absorbs light, it has the property of trapping light, and the charge transporting material has good charge transporting properties.
Light absorption characteristics are not good. Therefore, the two are separated so as to sufficiently exhibit their respective characteristics, and the charge generation layer and the charge transport layer are stacked.

<Charge Generating Layer> Examples of the material for forming the charge generating layer include azo-based materials,
There are disazo type, trisazo type, phthalocyanine type, acid xansen dye type, cyanine type, styryl dye type, pyrylium dye type, perylene type, methine type, a-Se, a-Si, azulenium salt type, squarium salt type and the like.

<Charge Transport Layer> Examples of the material forming the charge transport layer include hydrazone, pyrazoline, PVK, carbazole, oxazole, triazole, aromatic amine, amine, triphenylmethane, and polycyclic aromatic compounds. Group compounds.

As a method for producing a function-separated type photoreceptor, a charge generating substance is first dissolved in a solvent and applied on an electrode, and then the charge transport layer is dissolved in a solvent and applied to the charge transport layer.
It is preferable that the thickness of the charge transport layer be 0.1 to 10 μm and the thickness of the charge transport layer be 10 to 50 μm.

In addition, in any case of the single-layer type photoreceptor and the function separation type photoreceptor, as a binder, a silicone resin, a styrene-butadiene copolymer resin, an epoxy resin, an acrylic resin,
0.1 to 10 parts of saturated or unsaturated polyester resin, polycarbonate resin, polynivir acetal resin, phenol resin, polymethyl methacrylate (PMMA) resin, methamine resin, polyimide resin, etc. for each part of charge generation material and charge transport material Add to make it easy to adhere. As the coating method, a vapor deposition method, a sputtering method, or the like can be used by a dipping method.

 Next, the charge injection preventing layer will be described in detail.

The charge injection preventing layer is provided on at least one of both surfaces of the photoconductive layer 9 or on both surfaces, even though the dark current (charge injection from the electrode) when the voltage of the photoconductive layer 9 is applied, that is, not exposed. It can be provided to prevent development in which charges move in the photosensitive layer as if exposed.

The charge injection preventing layer includes two types, a layer using a so-called tunneling effect and a layer using a rectifying effect. First, in a device utilizing the so-called tunneling effect, current does not flow to the photoconductive layer or the insulating layer surface due to the charge injection preventing layer only by applying a voltage, but when light is incident, it corresponds to an incident portion. A high electric field is applied to the charge injection prevention layer due to the presence of one of the charges (electrons or holes) generated in the photoconductive layer, causing a tunnel effect and causing a current to flow through the charge injection prevention layer. is there. Such a charge injection prevention layer is formed of a single layer such as an inorganic insulating film, an organic insulating polymer film, and an insulating monomolecular film, or a laminated layer thereof. As the inorganic insulating film, for example, As ₂ O _{3, B 2 O 3, Bi} 2 O 3, CdS, CaO, CeO 2, Cr 2 O 3, Co
O, CeO ₂ , HfO ₂ , Fe ₂ O ₃ , La ₂ O ₃ , MgO, MnO ₂ , Nd ₂ O ₃ , Nb _{2
O 5, PbO, Sb 2 O} 3, SiO 2, SeO 2, Ta 2 O 5, TiO 2, WO 3, V
₂ O ₅ , Y ₂ O ₅ , Y ₂ O ₃ , ZrO ₂ , BaTiO ₃ , Al ₂ O ₃ , Bi ₂ TiO ₅ , CaO
_{-SrO, CaO-Y 2 O 3} , Cr-SiO, LiTaO 3, PbTiO 3, PbZr
O ₃ , ZrO ₂ -Co, ZrO ₂ -SiO ₂ , AlN, BN, NbN, Si ₃ N ₄ , Ta
N, TiN, VN, ZrN, SiC, TiC, WC, Al ₄ C _{3 and the} like are formed by glow discharge, vapor deposition, sputtering and the like. The thickness of this layer is determined for each material used in consideration of the insulating property for preventing charge injection and the tunnel effect.
Next, as the current injection preventing layer utilizing the rectifying effect, a charge transporting layer having a charge transporting ability having a polarity opposite to that of the electrode substrate is provided by utilizing the rectifying effect. That is, such a charge injection preventing layer is formed of an inorganic photoconductive layer, an induced photoconductive layer, and an organic-inorganic hybrid photoconductive layer, and has a thickness of about 0.1 to 10 μm.
Specifically, when the electrode is negative, B, Al, Ga, amorphous silicon photoconductive layer towed with In, etc., amorphous selenium, or oxadiazole, pyrazoline, polyvinylcarbazole, stilbene, anthracene, naphthalene, tridiphenylmethane, Organic photoconductive layer formed by dispersing triphenylmethane, azine, amine, aromatic amine, etc. in resin casting. If the electrode is positive, P,
An amorphous silicon photoconductive layer doped with N, As, Sb, Bi, or the like, a ZnO photoconductive layer, or the like is formed by a method such as glow discharge, vapor deposition, sputtering, CVD, or coating.

Next, a charge holding medium material and a method for manufacturing the charge holding medium will be described.

The charge holding medium 3 is used together with the photoreceptor 1 to record information as a distribution of electrostatic charges on the surface of the insulating layer 11 constituting the charge holding medium 3 or inside thereof.
The charge holding medium itself is used as a recording medium. Therefore, the shape of the charge holding medium can take various shapes depending on the recorded information or the recording method.

The insulating layer support 15 strongly supports the charge holding medium 3 as described above, but is basically made of the same material as the photoconductive layer support 5 and has the same light transmittance. May be required. Specifically, when the charge holding medium 3 takes the shape of a flexible film, tape, or disk, a flexible plastic film is used, and when strength is required, a rigid sheet, glass, or the like is used. An inorganic material or the like is used.

The charge storage medium electrode 13 may be basically the same as the photoreceptor electrode 7, and is formed on the insulating layer support 15 by the same forming method as the photoreceptor electrode 7 described above.

Since the insulating layer 11 records information on the surface or inside thereof as a distribution of static charges, high insulating properties are required to suppress the movement of charges, and the specific resistance is 10 ¹⁴ Ω ·
It is required to have insulation properties of not less than cm. Such an insulating layer 11 can be formed by dissolving a resin or rubber in a solvent and coating or dipping, or by vapor deposition or sputtering.

Here, examples of the resin and rubber include polyethylene, polypropylene, vinyl resin, styrene resin, acrylic resin, nylon 66, nylon 6, polycarbonate, acetal homopolymer, fluorine resin, cellulose resin, phenol resin, urea resin, and polyester resin. ,
Epoxy resin, flexible epoxy resin, melamine resin, silicone resin, phenoxy resin, aromatic polyimide, PP
O, polysulfone, etc., polyisoprene, polybutadiene, polychloroprene, isibutylene, extra-high nitrile,
Polyacryl rubber, chlorosulfonated polyethylene, ethylene. Rubber alone such as propylene rubber, fluorine rubber, silicon rubber, polysulfide synthetic rubber, urethane rubber,
Alternatively, a mixture is used.

Further, a layer is formed by attaching a silicon film, a polyester film, a polyimide film, a fluorine-containing film, a polyethylene film, a polypropylene film, a polyparabanic acid film, a polycarbonate film, a polyamide film or the like to the charge holding medium electrode 13 via an adhesive or the like. Formed or layered by coating and dipping by adding a necessary curing agent, solvent, etc. to thermoplastic resin, thermosetting resin, ultraviolet curable resin, electron beam curable resin, rubber, etc. Is also good.

As the insulating layer 11, a monomolecular film formed by a Langmuir-Blodgett method or a monomolecular cumulative film can be used.

In addition, a charge retention enhancing layer can be provided between the insulating layer 11 and the electrode surface or on the insulating layer 11. The charge retention enhancing layer refers to a layer into which electric charge is injected when a strong electric field (10 ⁴ V / cm or more) is applied, but which is not injected at a low electric field (10 ⁴ V / cm or less). As the charge retention enhancing layer, for example, SiO ₂ , Al ₂ O ₃ , SiC, SiN or the like can be used, and as the organic substance, for example, a polyethylene deposited film or a polyparaxylene deposited film can be used.

In order to more stably hold the electrostatic charge, the insulating layer 11
In addition, a substance having an electron-donating property (donor material) or a substance having an electron-accepting property (acceptor material) may be added. Donor materials include styrene, pyrene,
There are naphthalene-based, anthracene-based, pyridine-based, and azine-based compounds. Specifically, tetrathiofulvalene (TT
F), polyvinyl pyridine, polyvinyl naphthalene, polyvinyl anthracene, polyazine, polyvinyl pyrene, polystyrene and the like are used, and one kind or a mixture is used. As the acceptor material, there are a halogen compound, a cyan compound, a nitro compound and the like, and specifically, tetracyanoquinodimethane (TCNQ) trinitrofluorenone (TNF) and the like are used, and one kind or a mixture is used. The donor material and the acceptor material are used by adding about 0.001 to 10% to the resin or the like.

Further, in order to stably hold the charge, elemental element fine particles can be added to the charge holding medium. Elemental elements include the following elements in the periodic table: Group IA (alkali metal), Group IB (copper group), Group IIA (alkaline earth metal), Group IIB (zinc group), Group IIIA (aluminum group), IIIB (rare earth), IVB (titanium), VB (vanadium), VIB (chromium), VIIB (manganese),
Group VIII (iron group, platinum group) and group IVA (carbon group) include silicon, germanium, tin, lead, and VA mounting (nitrogen group)
Antimony, bismuth, and sulfur, selenium, and tellurium are used in the form of fine powder as Group V1A (oxygen group). Metals among the above elemental elements can be used in the form of metal ions, fine powdery alloys, organic metals, and complexes. Further, the above element simple substance can be used in the form of an oxide, a phosphate, a sulfate, or a halide. These additives may be added to the charge holding medium such as the above-mentioned resins and rubbers in a very small amount, and may be added in an amount of about 0.01 to 10% by weight based on the charge holding medium. The insulating layer 11 needs to have a thickness of at least 1000 ° (0.1 μm) from the viewpoint of insulating properties, and preferably 100 μm or less from the viewpoint of flexibilizing properties.

FIG. 2 is a view showing a charge holding medium exposure method according to the present invention, wherein 101 is a mirror, 104 is a developing machine, 105 is a paper or film, 106 is a transfer device, 107 is a fixing roll, 108 is a supply roll, and 109 is a roll. The taking roll 110 is an eraser.

Scanning light such as laser light or slit light that irradiates a document surface (not shown) is irradiated on the photoconductor 1 via a mirror 101. The photoreceptor 1 has an elongated shape perpendicular to the paper surface,
A predetermined voltage is applied between the rotating drum and the charge holding medium 3 on the rotating drum. As a result, an electrostatic latent image is recorded on the drum-shaped charge holding medium 3 according to the image density of the document.
The formed electrostatic latent image is developed with a toner by a developing device 104, further transferred to a vapor or a film 105 by a transfer device 106 composed of a corotron or the like, and fixed by a fixing roll 107 having a built-in heater. After the transfer, the remaining charge on the charge holding medium is erased by the eraser 110, and is prepared for the next exposure. Eraser 110 is charge storage medium 3
It is for leaking the above electric charge, and may be any conductive material such as liquid, solid, etc., as long as it can leak the electric charge by being brought into contact with the electric charge holding medium.
The residual charge may be canceled by a corona.

In the charge holding medium exposure method in this embodiment, image information is recorded as an electrostatic latent image on the charge holding medium 3, so that the latent image is stably held for a long time. Does not require potential control and can respond to a small amount of light, so that the exposure apparatus can be reduced in voltage and power consumption.

FIG. 3 shows another embodiment of the present invention, and the same reference numerals as those in FIG. 2 indicate the same contents. In addition, 120 is a magnetic brush developing device, 121 is a rotating magnet, and 122 is an electrode.

In the present embodiment, the charge holding medium is made of a paper or film-shaped insulator, and a similarly elongated electrode 122 is separately arranged via the charge holding medium 3 so as to face the photosensitive member 1 elongated in the direction perpendicular to the paper surface. Then, a predetermined voltage is applied between the photoconductor 1 and the electrode 122 to record an image on a paper or film-like insulator.

Next, the operation will be described. The elongated photosensitive member 1 is irradiated with laser scanning light or slit light from a document surface (not shown). On the other hand, the paper-shaped charge holding medium 3 is continuously conveyed by the supply roll 108 and the take-up roll 109 while being in contact with the electrode 122, and by applying a voltage between the photoconductor 1 and the electrode 122, An electrostatic latent image corresponding to image information is sequentially formed on the charge holding medium 3. The electrostatic latent image formed on the paper-like charge holding medium is developed with toner by the magnetic brush developing device 120 to form a toner image as shown in FIG. The magnetic brush developing device 120 has a rotating magnet 121, and the rotation of the magnet causes the magnetic toner particles to be turned into a brush shape and rotated to come into contact with a recording medium for development. Thereafter, the image is fixed by a fixing device (not shown).

In this embodiment, since the charge holding medium itself is a copy medium, the transfer process can be omitted. Of course, the image may be transferred from the paper-like charge holding medium to another sheet or the like. Further, if the charge holding medium can stably hold the latent image potential for a long period of time, development can be performed at any time, and even when configuring an apparatus, the latent image potential forming portion and the developing portion are separated from each other. It is also possible.

FIG. 4 is a view showing another embodiment of the present invention in which surface exposure is performed.

In this embodiment, the photoconductor 1 is formed in a planar shape, and the photoconductor 1 is sandwiched by a paper or film-shaped charge holding medium 3.
Are formed in a planar shape like the photoconductor. Then, at the time of exposure by intermittently feeding the charge holding medium 3,
The exposure is stopped at a predetermined position, and the exposure is sequentially performed. Since the surface exposure is performed as described above, the exposure time can be significantly reduced.

FIG. 5 (a) shows a configuration in which the magnetic brush developing device 120 is arranged to face the photoreceptor with respect to the charge holding medium, and the charge holding medium 3 is a simple insulating film without electrodes as shown in FIG. 5 (b). Then, the magnetic brush developing device is grounded, and a predetermined voltage is applied to the electrode of the photoconductor 1. And light source 10
When the surface of the original is irradiated with the light 2 and the surface of the photoreceptor 1 is exposed with the reflected light, an electrostatic latent image is formed on the film-like charge holding medium 3, and the toner is developed by the developing device 120 at the same time. The developing device 120 has a rotating magnet 121, rotates the magnetic toner particles, makes the magnetic toner particles in a brush shape, and contacts the charge holding medium 3 to thereby develop simultaneously with the exposure. Formed. In this case, since the developing device also functions as an electrode and grounds the charge of the charge holding medium via the magnetic toner particles, it is desirable that the charge holding medium is opposed to the charge holding medium over the entire exposed surface. A plurality of developing devices are arranged. After development in this way, the toner is thermally fixed by the heater 107.

In this embodiment, since the charge holding medium is not a film-shaped insulator and has electrodes, the developing device also functions as an electrode, and as a result, a large developing device or a plurality of developing devices is required. Therefore, it is preferable to use an exposure method using slit light or scanning beam light instead of surface exposure, and to make the developing device into an elongated and small shape.

FIG. 6 (a) shows a case where the magnetic brush developing device 120 is disposed on the same side as the photoconductor with respect to the charge holding medium. The charge holding medium 3 is made of an insulating layer support as shown in FIG. 6 (b). The electrode 13 has a normal configuration in which an electrode 13 is further formed thereon, and an insulating layer is further formed thereon, and a predetermined voltage is applied between the electrode of the photoreceptor and the electrode 13 of the charge holding medium to expose the electrode to exposure. An electrostatic latent image may be formed and development may be performed any time after exposure, and a toner image is formed on the exposed side.

Next, a color filter used for forming a color image will be described.

FIG. 7 is a diagram showing a color separation optical system using a prism. In the drawing, 31, 33, and 35 are prism blocks, 37, 39, and 41 are filters, and 43 and 45 are reflection mirrors.

The color separation optical system is composed of three prism blocks. Light information incident from the surface a of the prism block 71 is partially reflected and reflected on the surface b, further reflected on the surface a, and a B color light component is extracted from the filter 37. It is. The remaining light information enters the prism block 33, proceeds to the c-plane, and is partially reflected, and the G color light component passes from the filter 39 and the other goes straight to extract the R color light component from the filter 41. And
By reflecting the G and B color light components by the reflecting mirrors 43 and 45, the R, G and B lights can be extracted as parallel light.

By arranging such a filter 51 in front of the photoreceptor 1 as shown in FIG. 8 and photographing, the filter 51 shown in FIG.
1 set for 3 sets of charge-retaining medium that has been decomposed into R, G, and B
Frames may be formed, or one set of R, G, and B images may be arranged on one plane as shown in FIG.

FIG. 9 is a view showing an example of a fine color filter. For example, a resist-coated film is exposed by a mask pattern to form R, G, and B stripe patterns, which are formed by dyeing R, G, and B, respectively. 7, or a method in which R, G, B interference fringes generated by passing the color-separated light through the method shown in FIG. 7 through a narrow slit are recorded on a hologram recording medium, or a photoconductive method. Expose by putting a mask on the body,
An R, G, B stripe pattern is formed by an electrostatic latent image, and is developed by toner development and transferred three times to form a color composite by forming a toner stripe. One pixel is formed by one set of R, G, and B of the film formed by such a method, and one pixel is made as fine as about 10 μm. By using this film as the filter 51 in FIG. 8, a color electrostatic latent image can be formed. In this case, the filter may be arranged separately from the photoconductor, or may be formed integrally with the photoconductor.

Fig. 10 shows an example in which a fine color filter and a Fresnel lens are combined.The R, G, B pattern can be reduced and recorded by the Fresnel lens, and a lens design that is thinner and more compact than a normal lens is possible. It becomes possible.

Fig. 11 shows ND (Neutral Density) filter and R, G,
FIG. 4 is a diagram showing an example of three-plane division using a B filter together, where incident light is divided into three by ND filters 81 and 83 and a reflection mirror 85;
R, G, and B light can be extracted as parallel light by passing through the R filter 87, the G filter 89, and the B filter 91, respectively.

[Action]

The present invention uses a charge holding medium as an electrostatic latent image forming medium, forms an electrostatic latent image directly on the charge holding medium with information light from a document surface, and develops and transfers the electrostatic latent image with toner. Since no electrostatic latent image is formed after the entire surface is corona-charged, low voltage and low power consumption can be achieved, and resolution can be increased by performing planar analog recording. Further, the charge holding medium can be formed in a flat shape or a drum shape to form a conventional copying machine, and the charge holding medium can be formed of continuous paper or continuous film, and can be used as a copy paper. This makes it possible to diversify the copying machine, for example, by omitting the transfer process and simplifying the configuration of the copying machine.

 Hereinafter, examples will be described.

Example 1 Method for Producing a Charge Retaining Medium To a mixed solution having a composition of 10 g of methylphenylsilicone resin and 10 g of xylene-butanol 1: 1 solvent, 1% by weight of a curing agent (metal catalyst): trade name CR-15 (0.2 g), and the mixture was stirred well, and coated on a glass substrate on which Al was deposited at 1000 ° using a doctor blade 4 mil. Then 150
Dry at ℃ for 1 hour. A charge holding medium (a) having a film pressure of 10 μm was obtained.

In addition, the above mixed solution was coated on a 100 μm polyester film on which Al was deposited at 1000 ° in the same manner, and then dried to obtain a film-shaped charge holding medium (b).

The above mixed solution was spin-coated on a 4-inch disk-shaped acrylic (1 mm thick) substrate on which Al was vapor-deposited at 1000 °
And dried at 50 ° C. for 3 hours to obtain a disk-shaped charge holding medium (c) having a thickness of 7 μm.

Further, 0.1 g of zinc stearate was further added to the above mixed solution, and the same coating and drying were performed to obtain a charge retaining medium (d) having a film thickness of 10 μm.

Example 2 A mixed solution having a composition of 10 g of a polyimide resin and 10 g of N-methylpyrrolidone was spin-coated (1000 rpm, 20 seconds) on a glass substrate on which Al was deposited at 1000 °. After pre-drying at 150 ° C for 30 minutes to dry the solvent,
It was heated at 350 ° C. for 2 hours for curing. A uniform coating having a thickness of 8 μm was formed.

Example 3 Method for producing single-layer organic photoreceptor (PVK-TNF) 10 g of poly-N-vinyl carbazole (Anan Kofu Co., Ltd.)
Manufactured), 2,4,7-trinitrofluorenone 10 g, polyester resin 2 g (binder: Byron 200 Toyobo Co., Ltd.)
A mixed solution having a composition of 90 g of tetrahydrofuran (THF) was prepared in a dark place, and a doctor blade was applied to a glass substrate (1 mm thick) on which In ₂ O ₃ -SnO ₂ was sputtered to a thickness of about 1000 mm. It was then applied and dried by ventilation at 60 ° C. for about 1 hour to obtain a photosensitive layer having a photoconductive layer having a thickness of about 10 μm. In order to dry completely, it was further dried naturally for one day before use.

Example 4 A method for producing an amorphous silicon aSi: H inorganic photoreceptor.

Substrate cleaning SnO ₂ thin film transparent electrode layer one surface provided with Corning 7059 glass (23 × 16 × 0.9t, optical polished) trichloroethane, acetone, ethanol each liquid, ten minutes each in this order super Sonic clean.

Preparation of Apparatus The cleaned substrate is placed in the anode 2 in the reaction chamber 204 shown in FIG.
After setting the heat conduction on the 06, the reaction chamber is evacuated to 10 ^-5 Torr by DP, and the reaction vessel and gas pipe are baked out at 150-350 ° C for about 1 hour. After baking out, cool the device.

a ・ Si ・ H (n ⁺ ) deposition 208 heaters were adjusted so that the temperature of the glass substrate was 350 ℃.
PH ₃ / SiH ₄ preheated and mixed in tank 201 =
After controlling the number of revolutions of the needle valve and the PMB so that the internal pressure of the reaction chamber 204 becomes 200 mTorr and the internal pressure becomes constant, a 40 W R f Power 202 (13.56 KHz) is passed through the matching box 203. ) To form a plasma between the cathode and the anode. The deposition is performed for 4 minutes, the supply of Rf is stopped, and the needle valve is closed.

As a result, about 0.2 μm
-A Si: H (n ⁺ ) film was deposited on the substrate.

a. Deposition of Si: H 100% gas of SiH ₄ was flowed in the same manner as in the above to keep the internal pressure at 200 Torr, and when the internal pressure became constant, Matching B
Apply 40 W of R f power 202 (13.56 KHz) through ox203 to form a plasma and maintain it for 70 minutes. End of deposition is Rf
Stop feeding and close the needle valve. Heater208 Of
After f, remove the substrate because it is cold.

As a result, a film of about 18.8 μm was deposited on the a.Si:H(n ⁺ ) film.

Thus, SnO ₂ / a · Si: H (n ⁺ ) blocking layer / a · Si: H
A (non / dope) 20 μm photoconductor was able to be produced.

Example 5 Method for Producing Amorphous Selenium-Tellurium Inorganic Photoreceptor An a-Se-Te thin film was formed by vapor deposition using metal particles in which selenium (Se) was mixed with tellurium (Te) at a ratio of 13% by weight. Was deposited on an ITO glass substrate by a resistance heating method at a degree of vacuum of 10 ⁻⁵ Torr. The film thickness was 1 μm. Further, while maintaining the degree of vacuum, vapor deposition of only Se was performed by the same resistance heating method, and a-Se-
A 10 μma-Se layer was laminated on the Te layer.

Example 6 Method for Producing a Function-separated Photoreceptor (Method for Forming Charge Generation Layer) A mixed solution having a composition of 0.4 g of chlorodian blue and 40 g of dichloroethane was placed in a 250 ml stainless steel container,
Further, 180 ml of glass beads No. 3 is added, and crushed for about 4 hours by a vibration mill (KED9-4, Yaskawa Electric Seisakusho) to obtain chlorocyan blue having a particle size of ~ 5 µm. After filtering the glass beads, 0.4 g of polycarbonate and Iupilone E-2000 (Mitsubishi Gas Chemical) is added and stirred for about 4 hours. In this solution
₂ O ₃ -SnO ₂ to about 1000Å sputtered glass substrate (1mm
Thickness) using a doctor blade to a thickness of about 1 μm
Was obtained. Drying was performed at room temperature for one day.

(Formation method of charge transport layer)

A mixture having a composition of 0.1 g of 4-dibenzylamino-2-methylbenzaldehyde-1,1'-diphenylhydrazone, 0.1 g of polycarbonate (Iupilone E-2000) and 2.0 g of dichloroethane was charged with a doctor blade to the above-mentioned charge generating layer. Coating on top to obtain a charge transport layer of about 10 μm. Drying was performed at 60 ° C. for 2 hours.

[Example 7] (Method for forming charge generation layer) Butyralal resin (Sekisui Chemical, SLE
C) 0.25 g, azulhenium ClO ₄ salt having the following structural formula, 0.5 g, glass beads No., 133 g were mixed, stirred for 1 day with a touch mixer, well dispersed and then laminated on a glass plate with a doctor blade or applicator.
It was applied on O and dried at 60 ° C. for 2 hours or more. The film thickness after drying is 1 μm or less.

(Method of forming charge transport layer) 0.5 g of polycarbonate (Mitsubishi Gas Chemical, Iupilon E2000) in 9.5 g of tetrahydrofuran and a hydrazone derivative represented by the following structural formula (Anan perfume, CTC191) Then, the mixture was mixed with 0.5 g and applied on the charge generating layer with a doctor blade, and dried at 60 ° C. for 2 hours or more. 10 μm thick
It was below.

[Example 8] (Method of forming charge generation layer) In 20 g of tetrahydrofuran, 0.5 g of butyral resin (Sekisui Chemical, SLEC), 0.25 g of titanyl phthalocyanine, 4.10
-0.25 g of dibromoanthranthrone, glass beads No. 1
Was stirred for 1 day with a touch mixer, and the well-dispersed mixture was applied to ITO laminated on a glass plate with a doctor blade or an applicator and dried at 60 ° C. for 2 hours or more. The dried film had a thickness of 1 μm or less.

(Preparation method of charge transport layer) In 9.5 g of dichloroethane, 0.5 g of polycarbonate (Mitsubishi Gas Chemical, Iupilon E2000) and 0.5 g of the above hydrazone derivative (Anan fragrance, CTC191) were dissolved, and the above-mentioned charge generation layer was placed on the charge generation layer with a doctor blade. The coating was performed and dried at 60 ° C. for 2 hours or more. The film thickness was 10 μm or more.

[Example 9] ... Method of producing a function-separated type photoreceptor provided with a charge injection preventing layer (Method of forming charge injection preventing layer) Soluble polyamide (Toa Gosei Chemical, FS-175SV10) on ITO laminated on a glass plate 0.5 by spin coater
１1 μm coating, dried at 60 ° C. for 2 hours or more.

(Formation method of charge generation layer) Butyral resin (Sekisui Chemical, SLEC) in 10 g of butyl acetate
0.5 g, the above-mentioned azurenium ClO ₄ salt 0.5 g, glass beads
No, 133g and stir with touch mixer for 1 day,
The mixture was well dispersed and applied to the charge injection preventing layer with a doctor blade or an applicator and dried at 60 ° C. for 2 hours or more. The dried film had a thickness of 1 μm or less.

(Method of forming charge transport layer) In 9.5 g of tetrahydrofuran, 0.5 g of polycarbonate (Mitsubishi Gas Chemical Co., Ubilon E2000) and 0.5 g of the above-mentioned hydrazone derivative (Anan perfume, CTC191) are dissolved, and the above-mentioned charge generation layer is placed on the charge generation layer with a doctor blade. It was applied and dried at 60 ° C. for 2 hours or more. The film thickness was 10 μm or less.

Example 10 (Method for Forming Charge Injection Prevention Layer) Soluble polyamide (Toa Gosei Chemical Co., FS-175SV10) was applied on ITO laminated on a glass plate by a spin coater for 0.5 minute.
１1 μm coating, dried at 60 ° C. for 2 hours or more.

(Method of forming charge generation layer) 0.5 g of butyral resin (Sekisui Chemical, SLEC), 0.25 g of titanyl phthalocyanine, 4.10 in 20 g of tetrahydrofuran
-0.25 g of dibromoanthranthrone, glass beads No. 1
Was stirred for 1 day with a touch mixer, and the resulting mixture was well dispersed and applied to the above-mentioned charge injection preventing layer with a doctor blade or an applicator and dried at 60 ° C. for 2 hours or more. The dried film had a thickness of 1 μm or less.

(Method of forming charge transport layer) In 9.5 g of dichloroethane as a solvent, 0.5 g of polycarbonate (Mitsubishi Gas Chemical, Iupilon E2000) and 0.5 g of the above-mentioned hydrazone derivative (Anan Perfume, CTC191) are dissolved, and the above-mentioned charge is generated with a doctor blade. It was applied on the layer and dried at 60 ° C. for 2 hours or more. The film thickness was 10 μm or more.

Example 11 (Method of forming photoconductor electrode layer) Indium tin oxide (ITO, specific resistance 100
Ω · cm ² ) was deposited by a sputtering method.

 In addition, vapor deposition can be similarly performed by the EB method.

(Method of Forming Charge Injection Prevention Layer) On the photoreceptor electrode layer, silicon dioxide was deposited by a sputtering method.

The film thickness can be 100 to 3000 °, aluminum oxide may be used instead of silicon dioxide, and vapor deposition can be similarly performed by EB instead of sputtering.

(Method of forming charge generation layer) Selenium-tellurium (tellurium content: 13% by weight) was deposited on the charge injection preventing layer by resistance heating. The film thickness is 2
μm or less.

(Method of Forming Charge Transport Layer) Granular selenium was deposited on the charge generation layer by a resistance heating method. The film thickness is 10 μm or less.

〔The invention's effect〕

As described above, according to the present invention, exposure using scanning light, slit light, or surface exposure can also be performed, so that it is possible to diversify the exposure method, and in particular, in the case of surface exposure, the exposure speed is greatly increased. And the speed of copying can be increased. In addition, since corona charging is not performed, a high voltage is not required, and the amount of light required for forming a latent image on the charge holding medium can be reduced, so that low voltage and low power consumption can be achieved, and the charge holding medium can be used. Since the latent image potential is stably maintained for a long period of time, toner development can be performed at any time, and as a result, it is possible to configure a copying machine in which an exposed portion and a developed portion are separated.

[Brief description of the drawings]

FIG. 1 is a view for explaining a charge holding medium used in the copying apparatus of the present invention, FIG. 2 is a view showing a charge holding medium exposure method according to the present invention, and FIG. 3 uses a paper-like charge holding medium. FIG. 4 is a diagram showing another embodiment of the present invention in which surface exposure is performed, and FIG. 5 is a diagram showing a magnetic brush developing device exposed to a charge holding medium. FIG. 6 is a view showing another embodiment of the present invention in which the magnetic brush developing device is arranged to face the body, and FIG. 6 is a view showing an embodiment in which the magnetic brush developing device is arranged on the same side of the charge holding medium as the photosensitive body. FIG. 8 is a diagram showing a configuration of a color separation optical system, FIG. 8 is an explanatory diagram for forming a color electrostatic latent image, FIG. 9 is a diagram showing an example of a fine color filter, and FIG. FIG. 11 shows an example of combining lenses, FIG. 11 shows an ND filter and R,
FIG. 12 is a diagram showing three-plane division by using both G and B filters, and FIG. 12 is a diagram for explaining a method of manufacturing an a-Si: H photoconductor. DESCRIPTION OF SYMBOLS 1 ... Photoreceptor, 3 ... Charge holding medium, 101 ... Mirror, 104 ... Developing machine, 105 ... Paper or film, 106 ... Transfer device,
107: fixing roll, 108: supply roll, 109: take-up roll, 110: eraser.

Continuation of the front page (56) References JP-A-56-156840 (JP, A) JP-A-63-1163 (JP, A) JP-A-59-139061 (JP, A) JP-A-55-130543 (JP, A) , A) JP-A-56-126855 (JP, A) JP-A-62-291845 (JP, A) JP-B-57-55140 (JP, B2) (58) Fields investigated (Int. Cl. ⁶ , DB G03G 13/05 G03G 15/05

Claims (3)

(57) [Claims] A voltage is applied between a photoreceptor having an electrode and a photoconductive layer laminated on a substrate and a charge holding medium having an electrode and an insulating layer having a specific resistance of 10 ¹⁴ Ωcm or more laminated on the substrate. A charge holding medium exposure and recording method for forming an electrostatic latent image on a charge holding medium by irradiating light to the photosensitive body in a state where the charge is applied, and developing the toner, wherein the charge holding medium is in a drum shape, and the photosensitive body is slit. After forming an electrostatic latent image on the charge holding medium by performing exposure with scanning light or slit light on the charge holding medium, the charge holding medium is separated, and the charge holding medium on which the separated electrostatic latent image is formed is formed. A method for exposing and recording a charge holding medium, wherein toner development is performed at an arbitrary point in time during which a charge is stored. 2. A voltage is applied between a photoreceptor having an electrode and a photoconductive layer laminated on a substrate and a charge holding medium having an electrode and an insulating layer having a specific resistance of 10 ¹⁴ Ωcm or more laminated on the substrate. A charge holding medium exposure recording method for forming an electrostatic latent image on a charge holding medium by irradiating light to a photoreceptor in a state where the charge is applied, and developing the toner, wherein the charge holding medium is formed in a continuous film shape, Forming the photoreceptor in a slit shape and continuously feeding the charge holding medium so as to be exposed with scanning light or slit light,
After the electrostatic latent image is formed on the charge holding medium, the charge holding medium is separated, and the charge holding medium on which the separated electrostatic latent image is formed is developed with toner at an arbitrary point during the period in which the charges are stored. And a method for exposing and recording a charge holding medium. 3. A voltage is applied between a photoreceptor having an electrode and a photoconductive layer laminated on a substrate and a charge holding medium having an electrode and an insulating layer having a specific resistance of 10 ¹⁴ Ωcm or more laminated on the substrate. A charge holding medium exposure recording method for forming an electrostatic latent image on a charge holding medium by irradiating light to a photoreceptor in a state where the charge is applied, and developing the toner, wherein the charge holding medium is formed in a continuous film shape, The charge holding medium is intermittently fed so that the photoreceptor is formed in a planar shape and the surface is exposed, and an electrostatic latent image is formed on the charge holding medium. Then, the charge holding medium is separated, and the separated electrostatic latent image is separated. Wherein the toner is developed at an arbitrary point within a period in which the electric charge is stored in the electric charge holding medium on which the electric charge is stored.