JPH01287902A - Positive coefficient thermistor - Google Patents
Positive coefficient thermistorInfo
- Publication number
- JPH01287902A JPH01287902A JP11756588A JP11756588A JPH01287902A JP H01287902 A JPH01287902 A JP H01287902A JP 11756588 A JP11756588 A JP 11756588A JP 11756588 A JP11756588 A JP 11756588A JP H01287902 A JPH01287902 A JP H01287902A
- Authority
- JP
- Japan
- Prior art keywords
- electrode film
- solder
- coefficient thermistor
- thermal expansion
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000679 solder Inorganic materials 0.000 claims abstract description 19
- 239000000919 ceramic Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 4
- 230000001681 protective effect Effects 0.000 abstract description 4
- 229910052804 chromium Inorganic materials 0.000 abstract description 3
- 229910052709 silver Inorganic materials 0.000 abstract description 2
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
- 238000007747 plating Methods 0.000 description 9
- 238000005476 soldering Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 238000007751 thermal spraying Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical group [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、チタン酸バリウム系酸化吻を主成分とする半
導体セラミックスからなる正特性サーミスタに関し、特
に品質に対する信親性を向上できるようにした新規な電
極構造に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a positive temperature coefficient thermistor made of a semiconductor ceramic whose main component is barium titanate-based oxide. Regarding the electrode structure.
一般に、正特性サーミスタは、ある所定の温度以上にな
ると、その抵抗値が急激に上昇する正の温度特性を有し
ている。そしてこの正特性サーミスタは、半導体セラミ
ックス素子の表面に少なくとも一対の電極膜を形成して
構成されている。In general, a positive temperature coefficient thermistor has a positive temperature characteristic in which its resistance value rapidly increases when the temperature exceeds a certain predetermined temperature. This positive temperature coefficient thermistor is constructed by forming at least one pair of electrode films on the surface of a semiconductor ceramic element.
ところで、上記正特性サーミスタの電極膜は、整流性の
ない低抵抗のオーム接触を必要としており、従来から、
Ａｇ、Ｇａを主成分とした合金。By the way, the electrode film of the positive temperature coefficient thermistor requires a low-resistance ohmic contact with no rectification, and conventionally,
An alloy whose main components are Ag and Ga.
Ｎｉ、／１等が採用されている。また、上記電極膜を成
形する方法としては、Ａｇペーストの焼き付け、無電解
Ｎｉメツキ、あるいはＡ１の溶射等が採用されている。Ni, /1, etc. are used. Further, as a method for forming the electrode film, baking of Ag paste, electroless Ni plating, thermal spraying of A1, etc. are employed.
しかしながら、上記従来の各電極膜の形成方法では、一
般的に以下のような問題点がある。However, the conventional methods for forming each electrode film described above generally have the following problems.
■ 上記Ａｇペーストの場合は、寿命試験での抵抗値の
変化が大きくライフ試験に弱い、またＡｇの焼き付けは
低温で行うことから密着強度が弱い、さらに、上記Ａｇ
は半田付は時の拡散現象によって半田に溶は込み易く、
しかも高価である。■ In the case of the above Ag paste, the change in resistance value during the life test is large and it is weak in the life test, and the adhesion strength is weak because Ag is baked at a low temperature.
When soldering, melt easily enters the solder due to the diffusion phenomenon.
Moreover, it is expensive.
■ Ｎｉメツキの場合は、上記Ａｇと同様にうイフ試駁
で抵抗値が変化し易く、また３００℃以上の空気中で熱
処理を行うことから、表面酸化により半田が付かなくな
る。ざらに、メツキ液中に漫清することから、セラミッ
クス素子の吸水又はメツキイオンの残渣により素子が劣
化するおそれがある。(2) In the case of Ni plating, the resistance value tends to change in the after-test like the above-mentioned Ag, and since the heat treatment is performed in air at 300° C. or higher, the surface oxidizes and the solder does not stick. Furthermore, since the ceramic element is immersed in the plating solution, there is a risk that the element may be deteriorated due to water absorption by the ceramic element or residual plating ions.
■ Ａａの溶射の場合は、電極膜の形成初期においては
、安定したオーム性接触が得られるが、Ａｅ自体の耐環
境性が悪いことから、製品後の寿命が短く、酸化によっ
て半田が付きにくくなる。■ In the case of thermal spraying of Aa, stable ohmic contact can be obtained in the initial stage of electrode film formation, but since Ae itself has poor environmental resistance, the life of the product is short and it is difficult to solder due to oxidation. Become.
本発明の目的は、安定したオーム性接触及び弦い密着強
度が得られるとともに、半田付は性を向上できる全く新
規な構造の正特性サーミスタを提供することにある。An object of the present invention is to provide a positive temperature coefficient thermistor with a completely new structure that can provide stable ohmic contact and chordal adhesion strength, and improve solderability.
ｃ問題点を解決するだめの手段）
本件発明者は、上記目的を達成するために鋭意検討を重
ね、良好なオーム性接触及び高い密着強度が要求される
電極〃９用金属とＬ７て、Ｃｒに着目した。即ち、オー
ム性接触は原子の仕事関数の小さい方が得易いと３われ
ており、Ｃｒはこの仕事関数が小さく、ｐ、好なメ・−
・ム性接触が期待できろ６また、−ｍ的（、、：、Ｃｒ
はセラミックスとの強い密着強度が得易いことから、Ｊ
：配電極膜にＣｒを採用するこ＾が望ましいいしかし、
」二重Ｃｖは半田が付きにくく、す・−ド線の取りイ１
りやプリント基板への半田付けが困難になるという問題
がある。(Means for solving the problem) In order to achieve the above object, the inventor of the present invention has made extensive studies and determined that the metal for electrode 9 and L7, which require good ohmic contact and high adhesion strength, are made of Cr. We focused on In other words, it is said that ohmic contact is easier to obtain when the work function of the atom is small, and Cr has a small work function, p, and a good
・You can expect sexual contact 6 Also, -m (,,:,Cr
Since it is easy to obtain strong adhesion strength with ceramics, J
: It is desirable to use Cr for the distribution electrode film, but
"Double CV is difficult to solder, and it is easy to take the lead wire.
There is a problem in that it becomes difficult to solder to a board or a printed circuit board.
特殊な条件を用いれば半田伺けを容易化できるが、。However, soldering can be made easier by using special conditions.
これを行うとサーミスタの特性が劣化する問題がある８
一方、仮りにＣｒに半田付けした場合は、該Ｃｒは半田
に比べて熱膨張係数が小さいことかｌ）、両者の熱膨張
係数の差によるス（レスが生じ、セラミックス素子とＣ
ｒ電極膜との間の密着強度が低下するという問題が生じ
る。また正特性′ナーミスタは発熱素子であるため、熱
膨張係数の差は、単に半田（１３時の一時的な問題では
なく、永続的な問題となる。つまり、何らかの方法で半
田付けによる密着強度低下を防止できた々しても、通常
使用における発熱で密着強度が低下し信頼性を太き（引
き下げる事になる。そこで、上記Ｃｒからなる電極膜に
、半田付は性が良好で、がっｃｒと半田との熱膨張係数
の差を絣和で恋る金属イー被瑣して二重構造にしてやれ
ば上述した目的を達成できることを見出し、本発明を成
したものである。If you do this, there is a problem that the characteristics of the thermistor will deteriorate8.
On the other hand, if soldered to Cr, Cr has a smaller coefficient of thermal expansion than solder (l), and the difference in thermal expansion coefficient between the two will cause a crack between the ceramic element and the Cr.
A problem arises in that the adhesion strength with the r-electrode film decreases. In addition, since the positive characteristic Narmistor is a heat generating element, the difference in thermal expansion coefficient is not just a temporary problem, but a permanent problem. Even if it were possible to prevent this, the adhesion strength would decrease due to the heat generated during normal use, which would increase reliability. The present invention was made based on the discovery that the above-mentioned object could be achieved if the difference in thermal expansion coefficient between CR and solder was made into a double structure by applying the difference in thermal expansion coefficient between CR and solder.
そこで本発明は、正の抵抗へに特性を有する正特性サー
ミスタにおいて、半導体−１！−ラミックス素子の表面
に、Ｃｒからなる少なくとも一対の第１電極膜を形成し
、該第ｉｔ極膜の表面に、半田付は性がρ、好で、かつ
熱膨張係数が上記Ｃｒより大きく半田より小ざい金属か
らなる第２電極膜を形成したことを特徴としている。Therefore, the present invention provides a positive temperature coefficient thermistor having a characteristic of positive resistance. - At least a pair of first electrode films made of Cr are formed on the surface of the Lamix element, and on the surface of the it electrode film, the solderability is ρ, and the coefficient of thermal expansion is larger than that of the above-mentioned Cr. It is characterized by forming a second electrode film made of a metal smaller than solder.
ここで」二重第１電極膜は、スパッタリング、蒸着、溶
射等の乾式メツキにより形成することが望ましい。また
、上記第２電極■ζネは湿式あるいは乾式メツキのいず
れにより形成しても構わない、さらに、上記第２電極膜
としては、例えばＮｉ、ＣＵ等の金属が採用でき５．こ
れらの金属の熱膨張係数はＣｒと半田との略中間に値す
るからである。Here, the double first electrode film is preferably formed by dry plating such as sputtering, vapor deposition, thermal spraying, or the like. Further, the second electrode (1) may be formed by wet plating or dry plating.Furthermore, metal such as Ni, CU, etc. can be used for the second electrode film.5. This is because the coefficient of thermal expansion of these metals is approximately between that of Cr and solder.
本発明に係る正特性サーミスタによれば、セラミックス
素子にＣｒからなる第１電極膜を形成し、該第１電極膜
の表面／、、’Ｔ：ｆ田イづり性が良く、かりＣｒと半
田との熱膨張係数の差４：吸収できる金属からなる第２
電極膜を形成したので、−上記Ｃｒにより安定１．また
オーム外接８１（及び高い密着強度が得られ、上記第２
電極膜によって半田４ｆ１’ ＬＪ性を向トでき、その
結果品質、耐久性等に対する信頼性を向」二できる。According to the positive temperature coefficient thermistor according to the present invention, a first electrode film made of Cr is formed on a ceramic element, and the surface of the first electrode film has good ease of soldering, and is bonded with Cr and solder. Difference in thermal expansion coefficient between the
Since the electrode film was formed, it was stabilized by the above-mentioned Cr.1. In addition, ohmic circumscription 81 (and high adhesion strength can be obtained, and the second
The solder 4f1' LJ property can be improved by the electrode film, and as a result, reliability in terms of quality, durability, etc. can be improved.
以下、本発明の実施例を図について説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例による正特性サーミスタを説
明するための図である。FIG. 1 is a diagram for explaining a positive temperature coefficient thermistor according to an embodiment of the present invention.
図において、１は未実施例の正特性サーミスタである。In the figure, numeral 1 indicates a positive temperature coefficient thermistor that has not yet been implemented.
これは、円板状のＢａＴｉ０．系半導体セラミックス素
子２０対向する両主面に、スパッタリングによりＣｒか
らなる第１電極膜３を形成し、該第１電極膜３の表面す
こスパッタリングによりＮｉからなる第２電極膜４を形
成すると２−もに、この第２電極膜４の表面に、／Ｊか
らなる保護電極膜５を形成１，２て構成されている。ま
た、図示していないが、上記保護電極膜５には適宜リー
ド綿が半田付は接続されている。なお、上記保１！電極
膜５は、上記第２電極膜４の時間の経過による酸化によ
って生じる半田付は性の低下を防止するためのものであ
り、上記第２電極膜４の形成後、直、ちにリード線を接
続する場合は、必ずしもこの保護電極膜５を形成しなく
てもよい。This is a disc-shaped BaTi0. A first electrode film 3 made of Cr is formed by sputtering on both opposing principal surfaces of the system semiconductor ceramic element 20, and a second electrode film 4 made of Ni is formed by sputtering all over the surface of the first electrode film 3.2- In addition, on the surface of this second electrode film 4, a protective electrode film 5 made of /J is formed 1, 2. Further, although not shown, lead cotton is appropriately connected to the protective electrode film 5 by soldering. In addition, the above guarantee 1! The electrode film 5 is used to prevent deterioration of soldering properties caused by oxidation of the second electrode film 4 over time, and is used to immediately connect the lead wires after forming the second electrode film 4. In this case, the protective electrode film 5 does not necessarily need to be formed.
次に本実施例の作用効果について説明する。Next, the effects of this embodiment will be explained.
本実施例の正特性サーミスタ１は、所定の温度で抵抗値
が急増する抵抗温度特性を有しており、ヒータ素子又は
電流制御素子あるいは温度センサ等として利用されてい
る。The positive temperature coefficient thermistor 1 of this embodiment has a resistance temperature characteristic in which the resistance value rapidly increases at a predetermined temperature, and is used as a heater element, a current control element, a temperature sensor, or the like.
そして、本実施例の正特性サーミスタ１によれば、セラ
ミックス素子２にＣｒからなる第１電極膜３を形成し、
該第１電極膜３の表面にＮｉからなる第２電極膜４を形
成して二重構造としたので、上記第１電極膜３によって
安定したオーム性接触及び高い密着強度が得られる。ま
た、上記第２電極膜４によって半田付は性を向上できる
とともに、上記第１電極膜３とリード線初半田との熱膨
張係数の差を吸収できるから、第１電極膜３と半田との
熱膨張係数の差によるストレスを防止でき、密着強度の
低下を防止できる。According to the positive temperature coefficient thermistor 1 of this embodiment, the first electrode film 3 made of Cr is formed on the ceramic element 2,
Since the second electrode film 4 made of Ni is formed on the surface of the first electrode film 3 to form a double structure, stable ohmic contact and high adhesion strength can be obtained by the first electrode film 3. In addition, the second electrode film 4 can improve soldering properties and absorb the difference in thermal expansion coefficient between the first electrode film 3 and the lead wire initial solder, so that the first electrode film 3 and the solder can Stress due to differences in thermal expansion coefficients can be prevented, and a decrease in adhesion strength can be prevented.
なお、上記実施例では、各電極膜３〜５の形成をスパッ
タリングにより形成した場合を例にとって説明したが、
本発明では、上記第１を極１１に３は乾式メツキによる
ものであれば、いずれの方法でもよく、例えば溶射、蒸
着でもよい。In addition, in the above embodiment, the case where each electrode film 3 to 5 was formed by sputtering was explained as an example.
In the present invention, as long as the first electrode 11 and the third electrode 3 are dry plated, any method may be used, such as thermal spraying or vapor deposition.
また、上記第２電極膜４の形成方法は特に限定するもの
ではなく、湿式メツキ、蒸着、溶射でもよい、さらにこ
の第２ｔｌｉ膜としてＣｕを採用してもよく、要は半田
付は性が良好で、かつ熱膨張係数が第１電極膜３より大
きく半田より小さいもであればいずれの金属でも採用で
きる。Further, the method for forming the second electrode film 4 is not particularly limited, and may be wet plating, vapor deposition, or thermal spraying. Furthermore, Cu may be used as the second tli film, in short, it has good soldering properties. Any metal can be used as long as the coefficient of thermal expansion is larger than that of the first electrode film 3 and smaller than that of the solder.
さらにまた、上記実施例ではリード線を半田付けした場
合を例にとって説明したが、本発明は、リード線を取付
けない、いわゆるチップ型にも採用できる。Furthermore, although the above embodiments have been described with reference to the case where the lead wires are soldered, the present invention can also be applied to a so-called chip type device in which the lead wires are not attached.
第１表及び第２図は、本実施例による正特性サーミスタ
１の特性改善効果を説明するための実験結果を示すもの
である。第１表は正特性サーミスタの主要な特性を示し
、第２図は抵抗値と温度との関係を示す特性図である。Table 1 and FIG. 2 show experimental results for explaining the effect of improving the characteristics of the positive temperature coefficient thermistor 1 according to this embodiment. Table 1 shows the main characteristics of the positive temperature coefficient thermistor, and FIG. 2 is a characteristic diagram showing the relationship between resistance value and temperature.
なお、Ａは正特性サーミスタの理想特性値を示し、Ｂは
本実施例の電極膜による特性値を示す、また、Ｃ，、Ｄ
、Ｅはそれぞれ従来のＡｇペーストの焼き付け、電解Ｎ
ｉメツキ、Ａｌの溶射により電極膜を形成した場合の特
性値を示す。Note that A indicates the ideal characteristic value of the positive temperature coefficient thermistor, B indicates the characteristic value due to the electrode film of this example, and C, , D
, E are conventional Ag paste baking and electrolytic N, respectively.
Characteristic values are shown when an electrode film is formed by i-plating and thermal spraying of Al.
第１表及び第２図からも明らかなように、抵抗値、耐電
圧（第１表）、及び温度−抵抗値特性（第２図）のいず
れにおいても、従来の特性値Ｃ〜已に比べ本実施例の特
性値Ｂは向上しており、′理想の特性値Ａに近い値が得
られていることがわかる。また、耐環境試験、加速通電
ライフ試験においても、本実施例の特性値Ｂは従来の特
性値Ｃ〜Ｅに比べ大幅に変化率を低減できており、さら
にリード線の引っ張り試験においても大幅に強度を向上
できている。As is clear from Table 1 and Figure 2, the resistance, withstand voltage (Table 1), and temperature-resistance characteristics (Figure 2) are all lower than the conventional characteristic values C~ It can be seen that the characteristic value B of this example has been improved, and a value close to the ideal characteristic value A has been obtained. In addition, in the environmental resistance test and accelerated current life test, the rate of change of the characteristic value B of this example was significantly reduced compared to the conventional characteristic values C to E, and furthermore, in the lead wire tension test, the rate of change was significantly reduced. I have been able to improve my strength.
以上のように本発明に係る正特性サーミスタによれば、
セラミックス素子にＣｒからなる第１電極膜を形成し、
該第１１電極膜の表面に半田付は性が良く、かつＣｒと
半田との熱膨張係数の差を吸収できる第２電極膜を形成
するようにしたので、上記Ｃｒにより安定したオーム性
接触及び高い密着強度が得られ、上記第２１１極膜によ
って半田付けを向上できる効果がある。As described above, according to the positive temperature coefficient thermistor according to the present invention,
forming a first electrode film made of Cr on the ceramic element;
Since a second electrode film is formed on the surface of the eleventh electrode film, which has good soldering properties and can absorb the difference in thermal expansion coefficient between Cr and solder, the Cr allows stable ohmic contact and High adhesion strength can be obtained, and the 211th electrode film has the effect of improving soldering.
第１図は本発明の一実施例による正特性サーミスタを説
明するための断面図、第２図は本実施例による効果を説
明するための抵抗値と温度との関係を示す特性図である
。
図において、１は正特性サーミスタ、２は半導体セラミ
ックス素子、３は第１電極膜、４は第２電極膜である。
特許出願人 株式会社 村田製作所
代理人 弁理士 下 市 努
第１図
第２図
二４；ν１． 浅 （Ｃ″］→FIG. 1 is a sectional view for explaining a positive temperature coefficient thermistor according to an embodiment of the present invention, and FIG. 2 is a characteristic diagram showing the relationship between resistance value and temperature for explaining the effects of this embodiment. In the figure, 1 is a positive temperature coefficient thermistor, 2 is a semiconductor ceramic element, 3 is a first electrode film, and 4 is a second electrode film. Patent applicant Murata Manufacturing Co., Ltd. Representative Patent attorney Tsutomu Shimoichi Figure 1 Figure 2 24; ν1. Shallow (C″)→
Claims (1)
する正特性サーミスタにおいて、半導体セラミックス素
子の表面に、オーミック性のＣｒからなる少なくとも一
対の第１電極膜を形成し、該第１電極膜の表面に、半田
付け性が良好で、かつ熱膨張係数が上記Ｃｒより大きく
半田より小さい金属からなる第２電極膜を形成したこと
を特徴とする正特性サーミスタ。(1) In a positive temperature coefficient thermistor having a resistance temperature characteristic in which the resistance value rapidly increases at a predetermined temperature, at least a pair of first electrode films made of ohmic Cr are formed on the surface of a semiconductor ceramic element, and the first electrode 1. A positive temperature coefficient thermistor, characterized in that a second electrode film is formed on the surface of the film, and is made of a metal that has good solderability and has a coefficient of thermal expansion larger than that of Cr and smaller than that of solder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11756588A JPH01287902A (en) | 1988-05-13 | 1988-05-13 | Positive coefficient thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11756588A JPH01287902A (en) | 1988-05-13 | 1988-05-13 | Positive coefficient thermistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01287902A true JPH01287902A (en) | 1989-11-20 |
Family
ID=14714960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11756588A Pending JPH01287902A (en) | 1988-05-13 | 1988-05-13 | Positive coefficient thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01287902A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03239302A (en) * | 1990-02-16 | 1991-10-24 | Murata Mfg Co Ltd | Porcelain semiconductor element and manufacture of porcelain semiconductor element |
| EP0500955A1 (en) * | 1990-09-10 | 1992-09-02 | Kabushiki Kaisha Komatsu Seisakusho | Positive characteristic thermistor and manufacturing method therefor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5848402A (en) * | 1981-09-17 | 1983-03-22 | 三菱マテリアル株式会社 | Method of forming electrode for oxide semiconductor element |
| JPS60701A (en) * | 1983-06-16 | 1985-01-05 | ティーディーケイ株式会社 | Ormic electrode |
| JPS6465825A (en) * | 1987-07-31 | 1989-03-13 | Siemens Ag | Multilayer electric device with monolithic ceramic body and manufacture of the same |
-
1988
- 1988-05-13 JP JP11756588A patent/JPH01287902A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5848402A (en) * | 1981-09-17 | 1983-03-22 | 三菱マテリアル株式会社 | Method of forming electrode for oxide semiconductor element |
| JPS60701A (en) * | 1983-06-16 | 1985-01-05 | ティーディーケイ株式会社 | Ormic electrode |
| JPS6465825A (en) * | 1987-07-31 | 1989-03-13 | Siemens Ag | Multilayer electric device with monolithic ceramic body and manufacture of the same |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03239302A (en) * | 1990-02-16 | 1991-10-24 | Murata Mfg Co Ltd | Porcelain semiconductor element and manufacture of porcelain semiconductor element |
| EP0500955A1 (en) * | 1990-09-10 | 1992-09-02 | Kabushiki Kaisha Komatsu Seisakusho | Positive characteristic thermistor and manufacturing method therefor |
| US5289155A (en) * | 1990-09-10 | 1994-02-22 | Kabushiki Kaisha Komatsu Seisakusho | Positive temperature characteristic thermistor and manufacturing method therefor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100258676B1 (en) | Ceramic capacitor | |
| JPH01287902A (en) | Positive coefficient thermistor | |
| JP2022078352A (en) | Current detection resistor and manufacturing method thereof | |
| JP4560874B2 (en) | Ceramic electronic components | |
| KR100358302B1 (en) | Negative Temperature Coefficient Thermistor | |
| JPH01295403A (en) | Chip varister | |
| JPH0316255Y2 (en) | ||
| JP3169181B2 (en) | Chip type positive temperature coefficient thermistor | |
| JP3785961B2 (en) | Ceramic electronic components | |
| JPS6322444B2 (en) | ||
| JPH06349316A (en) | Conductive paste | |
| JPH0316254Y2 (en) | ||
| JPH08111349A (en) | Chip component | |
| JPH0415563B2 (en) | ||
| JP2001291604A (en) | Chip-type laminated thermistor and its manufacturing method | |
| JPH0370361B2 (en) | ||
| JP2000138105A (en) | Negative temperature coefficient thermistor device | |
| JP2022137967A (en) | Chip-type electronic component and manufacturing method thereof | |
| JPS5854481B2 (en) | Manufacturing method for electrodes for titanium-based oxides | |
| JPH04211101A (en) | Voltage nonlinear resistor element | |
| JPH02265202A (en) | Chip component | |
| JP2003147573A (en) | Method of manufacturing electronic parts and electronic parts | |
| JPS602178Y2 (en) | Positive characteristic thermistor | |
| JPH06151105A (en) | Manufacture of ptc resistor | |
| JPH0770411B2 (en) | Chip electronic component manufacturing method |